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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF6710S2TR1PBF

Name: IRF6710S2TR1PBF
Brand: Infineon Technologies
SKU: IRF6710S2TR1PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF6710S2TR1PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric S1

Datasheet:: IRF6710S2TR1PBF.pdf

Description:: MOSFET N-CH 25V 12A DIRECTFET

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Product details

Overview

IRF6710S2TR1PBF from Infineon Technologies is a 25 V, 4.5 mΩ (at V_GS = 10 V) N-channel Power MOSFET in DirectFET® S2 package, optimized as control FET in 12 V-input synchronous buck converters for CPU core power delivery. It delivers 12 A continuous drain current at T_A = 25°C, features ultra-low Q_g (8.8 nC), Q_gd (3.0 nC), and R_θJC (9.8°C/W), enabling high-frequency, high-efficiency DC-DC conversion in server and desktop VRMs.

For engineers reviewing the IRF6710S2TR1PBF datasheet, IRF6710S2TR1PBF pinout, IRF6710S2TR1PBF application, or IRF6710S2TR1PBF equivalent, key selection criteria include gate charge profile (Q_gd/Q_gs2 ratio), thermal resistance under dual-sided cooling, R_DS(on) at 4.5 V drive, avalanche ruggedness (E_AS = 100 mJ), and compatibility with MICRO-8 footprint layouts.

Technical Context

This MOSFET employs HEXFET® silicon on a copper-clad DirectFET® S2 substrate, enabling dual-sided thermal interface-top-side drain and bottom-side source terminals allow simultaneous heatsinking to PCB and external cooler. Its low 0.3 Ω gate resistance and 150 pF Crss minimize Miller-induced switching instability in hard-switched topologies.

The device is characterized for synchronous buck operation: V_GS(th) = 1.8 V (typ), ensuring robust turn-on at 4.5 V gate drive; body diode t_rr = 14–21 ns and Q_rr = 8.0–12 nC support fast commutation with low reverse recovery loss; R_DS(on) increases only 2× from 25°C to 125°C, supporting stable current sharing in multiphase designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - Supports 12 V bus with margin for transient overshoot in VRM applications
R_DS(on)	4.5 mΩ @ V_GS = 10 V - Enables <1 W conduction loss at 12 A, critical for >90% efficiency targets
Q_g	8.8 nC - Reduces gate driver power demand and enables >1 MHz switching without excessive losses
Q_gd	3.0 nC - Low Miller charge improves dV/dt immunity and reduces shoot-through risk in synchronous FETs
R_θJC	9.8°C/W - Confirmed with dual-sided cooling; allows >20 W power dissipation before exceeding 125°C junction
E_AS	100 mJ - Withstands unclamped inductive switching events in buck converter high-side position
V_GS(th)	1.8 V (typ) - Ensures full enhancement at 4.5 V logic-level drive, compatible with standard PWM controllers

Pinout & Package

IRF6710S2TR1PBF uses the DirectFET® S2 package-a leadless, low-profile (<0.7 mm) copper-can structure with top-side drain and bottom-side source terminals. The package footprint matches MICRO-8 but eliminates leads to reduce parasitic inductance and enable dual-sided thermal management.

Pin/Terminal	Circuit Role	Design Meaning
Top Metal (Drain)	High-current output node	Primary heat path to upper heatsink or thermal pad; electrically connected to all internal die drains
Bottom Source Pads (S1/S2)	Power return and gate reference	Low-inductance connection to PCB ground plane; supports high di/dt return paths for synchronous rectification
Gate Pad (G)	Control input	Exposed copper pad adjacent to source; requires short, low-inductance trace to gate driver to minimize ringing

Key Features

Feature	Design Value
Dual-sided cooling interface	Enables simultaneous thermal contact to top (drain) and bottom (source), reducing R_θJA by 80% vs. SO-8
Ultra-low package inductance	Eliminates bond wires; achieves <0.5 nH source inductance, critical for minimizing voltage spikes in high-dV/dt switching
Optimized for control FET role	Low Q_gd/Q_g ratio (34%) and 4.5 mΩ R_DS(on) at 10 V ensure minimal switching loss during high-side conduction
100% R_g tested	Guarantees gate resistance ≤0.3 Ω, ensuring consistent turn-on timing across production lots in parallel configurations
RoHS & halogen-free	Complies with IPC-J-STD-609A Class 1 for chlorine/bromine; suitable for automotive and industrial environments requiring strict material compliance

Applications

Server VRM Control FET

Laptop CPU Core Regulator

Use Scenario: High-density 3+1 phase buck converter supplying 1–2 V/100+ A to Intel/AMD CPUs in rack-mounted servers.

IC Role / Device Role / Timing Role: High-side control MOSFET switching at 300–600 kHz; handles full input voltage (12 V) and peak currents up to 40 A per phase.

Use Value: 4.5 mΩ R_DS(on) and 8.8 nC Q_g reduce total power loss by ≥15% vs. comparable SO-8 devices, directly improving system efficiency and thermal headroom.

Use Scenario: Compact 2-phase VRM on thin-and-light laptop motherboards powering mobile processors with dynamic current bursts >30 A.

IC Role / Device Role / Timing Role: Control FET operating with 4.5 V gate drive from integrated PWM controller; switches at 500–800 kHz with tight duty cycle control.

Use Value: V_GS(th) = 1.8 V ensures reliable turn-on at low drive voltage; 0.7 mm profile enables stacking with inductor and capacitor in ultra-thin chassis designs.

GPU Power Delivery Module

Industrial FPGA Core Supply

Use Scenario: Multi-phase VRM on PCIe graphics cards delivering transient-heavy 0.8–1.2 V/50–80 A to discrete GPUs under gaming or AI workloads.

IC Role / Device Role / Timing Role: Control FET subjected to rapid load steps (>100 A/µs); must sustain avalanche energy during inductive kickback.

Use Value: E_AS = 100 mJ and t_rr = 14 ns body diode enable robust operation during extreme transients without external snubbers.

Use Scenario: Programmable logic board requiring stable 1.0 V core supply with long-term reliability in factory automation equipment.

IC Role / Device Role / Timing Role: Control FET in isolated, fanless 12 V-to-1 V buck converter; operates continuously at 65°C ambient with no forced airflow.

Use Value: R_DS(on) drift of only 2× from 25°C to 125°C ensures predictable conduction loss over full industrial temperature range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar control-FET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF6642TRPbF	R_DS(on) = 5.2 mΩ @ 10 V; Q_g = 9.3 nC; same S2 outline but higher gate charge	Slightly lower efficiency at high frequency due to +5.7% Q_g; identical thermal interface	Prefer when cost sensitivity outweighs marginal efficiency gain
SiR626DP-T1-GE3	R_DS(on) = 4.0 mΩ @ 10 V; Q_g = 10.2 nC; PowerPAK® 1212-8 package with single-sided cooling	Lower R_DS(on) but higher Q_g and no dual-sided thermal path; requires PCB redesign	Select only if layout allows dedicated top-side heatsink and efficiency gain justifies footprint change

Compared with IRF6642TRPbF and SiR626DP-T1-GE3, the IRF6710S2TR1PBF uniquely balances ultra-low R_DS(on), minimized Q_gd, and dual-sided cooling-making it the optimal choice for space-constrained, high-frequency VRMs where thermal density and switching loss are co-critical.

Availability

IRF6710S2TR1PBF is available at Aetrix Electronics and suitable for server VRMs, laptop CPU regulators, GPU power modules, and industrial FPGA core supplies requiring stable component supply across multi-year production cycles.

Supply support for IRF6710S2TR1PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to IATF 16949 and ISO 9001.

This part belongs to Infineon's DirectFET® Power MOSFET product line-engineered specifically for high-frequency, high-efficiency DC-DC conversion in computing and communications infrastructure where thermal density and switching loss dominate design constraints.

FAQ

What is the maximum continuous drain current at 70°C ambient?

The IRF6710S2TR1PBF supports 37 A continuous drain current at T_A = 70°C when mounted on a 1 in² copper board with dual-sided cooling and proper thermal interface materials. This rating assumes V_GS = 10 V and is limited by package thermal resistance (R_θJA = 12.5°C/W typ) and silicon safe operating area.

Does this MOSFET require a gate resistor for stability in synchronous buck operation?

Yes-a gate resistor of 1–5 Ω is recommended to dampen ringing caused by interaction between gate drive impedance and the device's 0.3 Ω intrinsic R_g. Layout-dependent parasitics can cause oscillation above 100 MHz; empirical testing with 2.2 Ω series resistor at the gate pad typically achieves clean turn-on/turn-off waveforms at 500 kHz.

Can IRF6710S2TR1PBF be used as a synchronous rectifier (low-side FET)?

No-it is optimized as a control (high-side) FET. Its body diode has t_rr = 14–21 ns and Q_rr = 8.0–12 nC, which is acceptable for controlled commutation but not low-loss synchronous rectification. For low-side roles, Infineon recommends complementary parts like IRF6712S2TR1PBF with enhanced diode softness and lower Q_rr.

Is the DirectFET® S2 package compatible with standard reflow profiles?

Yes-IRF6710S2TR1PBF is qualified for vapor phase, infrared, and convection reflow per J-STD-020D. Peak temperature must not exceed 260°C for ≤30 seconds. Critical process guidance is provided in Application Note AN-1035, including solder paste volume control and preheat ramp rates to prevent voiding in the copper substrate interface.

IRF6710S2TR1PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: DirectFET™ Isometric S1

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Ta), 37A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5.9mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:: 2.4V @ 25µA

Gate Charge (Qg) (Max) @ Vgs:: 13 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1190 pF @ 13 V

FET Feature:: -

Power Dissipation (Max):: 1.8W (Ta), 15W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DirectFET™ Isometric S1

IRF6710S2TR1PBF FAQ

1.How can I place an order for IRF6710S2TR1PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF6710S2TR1PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF6710S2TR1PBF reliable?

The price and inventory of IRF6710S2TR1PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6710S2TR1PBF is usually 5 days.

3.What payment methods are accepted for IRF6710S2TR1PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6710S2TR1PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF6710S2TR1PBF?

IRF6710S2TR1PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF6710S2TR1PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF6710S2TR1PBF?

For technical support, including IRF6710S2TR1PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6710S2TR1PBF requirements.

6.How does Aetrix verify that IRF6710S2TR1PBF is sourced from the original manufacturer or authorized distributors?

All IRF6710S2TR1PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6710S2TR1PBF meets industry standards.

7.What is the process for return or replacement of IRF6710S2TR1PBF?

All IRF6710S2TR1PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF6710S2TR1PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF6710S2TR1PBF part is unused and in its original packaging.

Return procedure for IRF6710S2TR1PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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