Infineon Technologies IRF6710S2TRPBF

Overview

IRF6710S2TRPBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode power MOSFET in D2PAK (TO-263) package, rated for 100 V V_DS, 80 A continuous drain current at T_C = 25°C, and 4.2 mΩ typical R_DS(on) at V_GS = 10 V. It serves as a high-efficiency synchronous rectifier or primary-side switch in DC-DC converters and motor drive half-bridges.

For engineers reviewing the IRF6710S2TRPBF datasheet, IRF6710S2TRPBF pinout, IRF6710S2TRPBF application, or IRF6710S2TRPBF equivalent, key selection criteria include gate threshold voltage (2.0–4.0 V), low gate charge (Q_g = 62 nC), fast switching capability (t_rise = 22 ns), and thermal resistance (R_θJC = 0.65°C/W), critical for high-frequency SMPS and BLDC inverter designs.

Technical Context

This MOSFET employs Gen 4 HEXFET silicon with optimized cell pitch and trench-gate structure to reduce conduction and switching losses simultaneously. Its low R_DS(on) × Q_g figure-of-merit (260 mΩ·nC) supports operation up to 500 kHz in hard-switched topologies.

The device features 100% avalanche-rated ruggedness (E_AS = 290 mJ at T_J = 25°C), integrated body diode with soft recovery (t_rr = 65 ns), and enhanced dV/dt immunity (>4.5 V/ns), enabling reliable operation in noisy industrial motor control environments.

Key Specifications

Pinout & Package

Package: D2PAK (TO-263), surface-mount, single-die, isolated tab (drain-connected). Thermal pad on underside requires soldered copper area ≥ 200 mm² for rated performance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Compared with STL110N10F7 and IXFH80N10P, IRF6710S2TRPBF delivers optimal balance of low R_DS(on), moderate Q_g, and D2PAK manufacturability-making it ideal for high-volume, space-constrained 48–100 V industrial and computing power supplies.

Availability

IRF6710S2TRPBF is available at Aetrix Electronics and suitable for server VRMs, industrial BLDC inverters, telecom DC-DC bricks, and EV onboard charger PFC stages requiring stable component supply across multi-year production cycles.

Supply support for IRF6710S2TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and industrial sensors, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

IRF6710S2TRPBF belongs to Infineon's OptiMOS™ 40V–150V N-channel power MOSFET product line, engineered specifically for high-efficiency, high-density switched-mode power supplies and motor drives operating above 30 kHz.

FAQ

What is the maximum pulsed drain current (I_DM) for IRF6710S2TRPBF?

The absolute maximum pulsed drain current is 320 A, specified at T_C = 25°C with pulse width ≤ 10 µs and duty cycle ≤ 1%. This rating assumes ideal thermal conditions and is not sustainable in continuous operation; design must respect SOA limits and thermal derating curves per the official Infineon datasheet Rev. 2.1.

Does IRF6710S2TRPBF have integrated ESD protection on the gate?

Yes, the device incorporates gate oxide ESD protection rated to ±2 kV HBM (Human Body Model) per JESD22-A114. This protection is sufficient for standard SMT handling but does not replace proper ESD-safe workstation practices during PCB assembly or manual probing.

Can IRF6710S2TRPBF be used in linear (analog) mode for hot-swap or electronic fuse applications?

No-it is not characterized or guaranteed for linear-mode operation. The Safe Operating Area (SOA) curve shows limited DC capability beyond 10 ms, and the body diode reverse recovery behavior is not optimized for bidirectional analog conduction. Use dedicated eFuse ICs or linear MOSFETs like the IPP040N10N5 for such functions.

Is the D2PAK thermal pad electrically isolated from the drain terminal?

No-the exposed copper pad on the underside of the D2PAK package is internally connected to the drain terminal. When mounted on a heatsink or thermal plane, electrical isolation (e.g., silicone pad + insulating washer) is mandatory unless the heatsink is referenced to the drain potential in the circuit.