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Infineon Technologies IRF6712STR1PBF
- Part No.:
- IRF6712STR1PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- DirectFET™ Isometric SQ
- Datasheet:
-
IRF6712STR1PBF.pdf
- Description:
- MOSFET N-CH 25V 17A DIRECTFET
- Quantity:
- Payment:
- Shipping:
Inventory:9,446
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Product details
Overview
IRF6712STR1PBF from Infineon Technologies is a 25 V, 17 A (TC = 25°C), N-channel DirectFET™ Power MOSFET in SQ package with 3.8 mΩ RDS(on) @ VGS = 10 V, 12 nC total gate charge, and ultra-low 0.7 mm profile - optimized for high-frequency synchronous buck converters powering CPU cores in server and telecom DC-DC applications.
For engineers reviewing the IRF6712STR1PBF datasheet, IRF6712STR1PBF pinout, IRF6712STR1PBF application, or IRF6712STR1PBF equivalent, key selection criteria include low RDS(on) at 4.5 V drive, dual-sided cooling capability, sub-10 nC Qgd, 210 pF Crss, and compatibility with standard SMT reflow profiles per AN-1035.
Technical Context
This MOSFET employs HEXFET® silicon on a copper substrate DirectFET SQ package, enabling top- and bottom-side thermal paths with RθJC = 3.5°C/W and RθJ-PCB = 1.0°C/W when mounted on metalized PCBs. Its gate threshold voltage of 1.9 V (typ) and negative temperature coefficient (−6.1 mV/°C) support stable operation across −40°C to +150°C junction range.
The device is characterized for synchronous rectification in 12 V input buck converters, where low Qgd/Qgs2 ratio (4.0 nC / 1.7 nC) minimizes Miller-induced switching delay, and 14 nC Qrr with 17 ns trr reduces body diode recovery loss during hard commutation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 25 V - supports 12 V bus systems with margin against transients and ringing |
| RDS(on) @ 10 V | 3.8 mΩ - enables <1 W conduction loss at 17 A continuous drain current |
| Qg total | 12 nC - allows fast turn-on with moderate gate driver strength (e.g., 1–2 A peak) |
| Qgd | 4.0 nC - limits Miller plateau duration, improving dV/dt immunity and switching controllability |
| Crss | 210 pF - reduces gate-drive power and EMI generation during high-dV/dt transitions |
| tr/tf | 40 ns / 12 ns - supports >1 MHz switching in multiphase VRMs without excessive dead-time penalty |
| RθJ-PCB | 1.0°C/W - delivers 2× better PCB-conducted thermal performance than SO-8 equivalents |
Pinout & Package
IRF6712STR1PBF uses the DirectFET SQ (Small Can, Q-designation) package: 4.8 mm × 3.8 mm footprint, 0.7 mm height, copper top- and bottom-side terminals. Drain connects to both top metal pad and bottom substrate; Source and Gate are isolated on the bottom side.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Top Metal Pad | Drain (D) | Primary high-current path and primary thermal interface - soldered directly to power plane or heatsink |
| Bottom Terminal 1 | Source (S) | Low-inductance return path for synchronous FET current; connects to source node and ground plane |
| Bottom Terminal 2 | Gate (G) | Control terminal with 1.7 Ω internal gate resistance - requires low-impedance gate driver routing |
| Bottom Substrate | Drain (D) | Secondary thermal and current path - enables dual-sided cooling when mounted on thermally enhanced PCB |
Key Features
| Feature | Design Value |
|---|---|
| Dual-sided cooling | Enables simultaneous top-sink and bottom-PCB heat extraction, reducing RθJA by up to 80% vs. SO-8 |
| Ultra-low package inductance | <0.3 nH source inductance - suppresses voltage overshoot and ringing during hard-switching |
| Optimized for 4.5 V drive | 6.7 mΩ RDS(on) @ VGS = 4.5 V - ensures full enhancement with modern controller gate outputs |
| 100% Rg tested | Guarantees gate resistance between 1.7 Ω and 3.0 Ω - improves consistency in gate-drive timing and loss prediction |
| RoHS & halogen-free | Complies with IPC-1752A material declaration requirements for industrial and telecom end equipment |
Applications
| CPU Core Voltage Regulator | Server DDR Memory VRM |
|---|---|
|
Use Scenario: High-current, multi-phase buck converter supplying 0.8–1.2 V to x86 or ARM processors at up to 200 A per rail. IC Role / Device Role / Timing Role: Synchronous rectifier FET operating at 500 kHz–1.5 MHz with 50–100 ns dead time. Use Value: 3.8 mΩ RDS(on) and 12 nC Qg reduce combined conduction + switching loss by ≥15% versus SO-8 alternatives at 1 MHz. |
Use Scenario: Compact, low-profile VRM delivering 1.2 V/60 A to DDR4/DDR5 memory subsystems in space-constrained 1U servers. IC Role / Device Role / Timing Role: Low-side SyncFET in 3+1 phase topology with tight layout constraints and forced-air cooling. Use Value: 0.7 mm profile fits under memory modules; dual-sided cooling maintains TJ < 105°C at full load without external heatsinks. |
| Telecom Baseband Power Supply | AI Accelerator Board Power Stage |
|
Use Scenario: 12 V input, 3.3 V/40 A output buck converter for FPGA and baseband ICs in 5G radio units. IC Role / Device Role / Timing Role: Primary power switch in high-efficiency, high-density POL converter with <10 mm² per phase. Use Value: SQ footprint matches MICRO-8 layouts; 210 pF Crss lowers EMI filter component count and board area. |
Use Scenario: Multiphase 0.75 V/300 A VRM powering GPU or AI inference ASICs in datacenter accelerators. IC Role / Device Role / Timing Role: High-current SyncFET with parallel paralleling capability enabled by low RDS(on) tolerance and matched Qg. Use Value: 17 A ID rating and 130 A pulsed current allow robust paralleling; 14 nC Qrr prevents shoot-through during asymmetric load transients. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF6642TRPbF | 30 V VDS, 4.2 mΩ RDS(on) @ 10 V, 13.5 nC Qg, same SQ package | Higher voltage rating suits 19 V adapter inputs; slightly higher Qg increases gate drive loss at >1 MHz | Select when system bus exceeds 15 V or transient margin >10 V is required |
| SiR872DP-T1-GE3 | 30 V VDS, 3.5 mΩ RDS(on) @ 10 V, 15.5 nC Qg, PowerPAK® 1212-8 package | Lower RDS(on) but taller (1.0 mm) and higher Qg; no dual-sided cooling | Prefer when lowest conduction loss dominates over thermal or height constraints |
Compared with IRF6712STR1PBF, IRF6642TRPbF offers higher voltage safety margin at minor gate-drive cost, while SiR872DP-T1-GE3 trades package height and thermal architecture for lower RDS(on) - making IRF6712STR1PBF optimal for ultra-thin, thermally aggressive 12 V CPU VRMs.
Availability
IRF6712STR1PBF is available at Aetrix Electronics and suitable for CPU core voltage regulation, server memory VRMs, and telecom baseband power supplies requiring stable component supply, long-lifecycle support, and consistent parametric performance across production lots.
Supply support for IRF6712STR1PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive MCUs, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.
This part belongs to Infineon's DirectFET™ Power MOSFET product line, engineered specifically for high-frequency, high-density DC-DC conversion in computing and communications infrastructure where thermal, electrical, and mechanical miniaturization are critical.
FAQ
What is the maximum continuous drain current for IRF6712STR1PBF at 70°C ambient?
The IRF6712STR1PBF supports 13 A continuous drain current at TA = 70°C with proper PCB copper area and airflow. This rating assumes surface mounting on a 1 in² copper board in still air; derating follows the linear factor of 0.017 W/°C above 70°C ambient.
Does IRF6712STR1PBF require special stencil design for solder paste application?
Yes - the DirectFET SQ package requires a custom stencil aperture per Infineon Application Note AN-1035: 0.12 mm thickness, 80% area ratio for top drain pad, and 100% fill for bottom terminals. Standard MICRO-8 stencils will underprint and cause voiding or lift.
Can IRF6712STR1PBF be used as a control FET in a synchronous buck converter?
Yes - its 1.9 V VGS(th) and low Qgd/Qg ratio make it suitable for high-side control FET operation up to 1 MHz, provided gate drive voltage exceeds 6 V and dead-time is adjusted to avoid cross-conduction with the SyncFET.
What is the avalanche energy rating for IRF6712STR1PBF?
The device is rated for 50 mJ single-pulse avalanche energy (EAS) at IAS = 13 A, L = 0.14 mH, and TJ = 25°C. This supports unclamped inductive switching in non-isolated converters but is not intended for repetitive avalanche operation.
IRF6712STR1PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- DirectFET™ Isometric SQ
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 25 V
- Current - Continuous Drain (Id) @ 25°C:
- 17A (Ta), 68A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 4.9mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id:
- 2.4V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs:
- 18 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1570 pF @ 13 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.2W (Ta), 36W (Tc)
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DIRECTFET™ SQ
IRF6712STR1PBF FAQ
1.How can I place an order for IRF6712STR1PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF6712STR1PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF6712STR1PBF reliable?
The price and inventory of IRF6712STR1PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6712STR1PBF is usually 5 days.
3.What payment methods are accepted for IRF6712STR1PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6712STR1PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF6712STR1PBF?
IRF6712STR1PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF6712STR1PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF6712STR1PBF?
For technical support, including IRF6712STR1PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6712STR1PBF requirements.
6.How does Aetrix verify that IRF6712STR1PBF is sourced from the original manufacturer or authorized distributors?
All IRF6712STR1PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6712STR1PBF meets industry standards.
7.What is the process for return or replacement of IRF6712STR1PBF?
All IRF6712STR1PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF6712STR1PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF6712STR1PBF part is unused and in its original packaging.
Return procedure for IRF6712STR1PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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