Infineon Technologies IRF6714MTR1PBF

Overview

IRF6714MTR1PBF from Infineon Technologies is a 25 V, 29 A N-channel DirectFET™ Power MOSFET optimized for synchronous buck converter high-side and low-side switching in CPU core DC-DC converters. It delivers 1.6 mΩ R_DS(on) @ 10 V, 29 nC total gate charge, and ultra-low package inductance in a 0.6 mm profile surface-mount package with dual-sided cooling capability.

For engineers reviewing the IRF6714MTR1PBF datasheet, IRF6714MTR1PBF pinout, IRF6714MTR1PBF application, or IRF6714MTR1PBF equivalent, key selection criteria include C_dv/dt immunity for synchronous FET operation, thermal resistance (R_θJC = 1.4 °C/W), conduction loss at 4.5 V gate drive, and compatibility with vapor-phase and convection reflow soldering per AN-1035.

Technical Context

This MOSFET employs HEXFET® silicon on a DirectFET™ copper substrate to achieve simultaneous low R_DS(on) (1.6 mΩ typ. @ 10 V) and low Q_g (29 nC), enabling high-frequency switching with minimized conduction and switching losses. Its gate threshold voltage (1.9 V typ.) and negative temperature coefficient of V_GS(th) (−6.5 mV/°C) support stable parallel operation.

The device integrates a robust body diode with 36 nC reverse recovery charge (Q_rr) and 26 ns trr, rated for unclamped inductive switching up to 234 A pulsed drain current and 800 mJ single-pulse avalanche energy. Its 490 pF Crss and 1.2 Ω gate resistance further optimize dv/dt immunity and gate drive efficiency.

Key Specifications

Pinout & Package

DirectFET™ package (outline SQ/SX per IRF documentation): ultra-low-profile (0.6 mm max), copper-can construction with exposed Drain on top and bottom surfaces; no traditional leadframe; terminals accessed via top-side Gate and Source pads and bottom-side Drain pad.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRF6714MTR1PBF, IRF6662MTR1PBF trades 0.4 mΩ higher R_DS(on) for 4 nC lower Q_g, improving gate drive efficiency at cost of 2.5% higher conduction loss; SiR626DP-T1-GE3 offers similar R_DS(on) but lacks dual-sided cooling and has 32× higher R_θJA, limiting use to lower-power or forced-air-cooled systems.

Availability

IRF6714MTR1PBF is available at Aetrix Electronics and suitable for CPU core voltage regulators, GPU power delivery modules, and AI accelerator power stages requiring stable component supply, long-term lifecycle support, and traceable RoHS-compliant sourcing.

Supply support for IRF6714MTR1PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This part belongs to Infineon's DirectFET™ Power MOSFET product line, engineered specifically for high-frequency, high-efficiency DC-DC conversion in computing and data center power supplies where thermal density and switching loss are critical constraints.

FAQ

What is the maximum continuous drain current at 70°C ambient temperature?

The IRF6714MTR1PBF supports 175 A continuous drain current at T_A = 70°C when mounted on a 1 in² copper board with dual-sided cooling and proper thermal interface. This rating assumes V_GS = 10 V, T_J ≤ 150°C, and adherence to AN-1035 assembly guidelines for DirectFET™ packages.

Does this MOSFET require a negative gate voltage for reliable turn-off in synchronous buck applications?

No. The IRF6714MTR1PBF has a gate threshold voltage of 1.9 V (typ.) and is fully enhanced at 0 V gate-to-source bias. A 0 V turn-off is sufficient; applying −5 V is unnecessary and not recommended, as its gate oxide is rated only for ±20 V and negative bias adds no reliability benefit.

Can it be used as a high-side switch with bootstrap gate drive?

Yes. The device supports bootstrap gate drive in high-side configurations up to 25 V V_DS. Its 1.2–2.2 Ω gate resistance and 29 nC Q_g allow reliable switching at 500–1000 kHz with standard 12 V bootstrap supplies and 10 Ω gate resistors, provided dead-time exceeds 100 ns to prevent shoot-through.

Is the R_DS(on) value specified at junction temperature or case temperature?

R_DS(on) is characterized at T_J = 25°C and 125°C, with typical values of 1.6 mΩ and 2.6 mΩ respectively at V_GS = 10 V. The datasheet provides normalized curves (Fig. 7) showing R_DS(on) increases linearly with junction temperature, enabling accurate loss calculation across the full −40°C to +150°C operating range.