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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF6715MTR1PBF

Name: IRF6715MTR1PBF
Brand: Infineon Technologies
SKU: IRF6715MTR1PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF6715MTR1PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric MX

Datasheet:: IRF6715MTR1PBF.pdf

Description:: MOSFET N-CH 25V 34A DIRECTFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF6715MTR1PBF from Infineon Technologies is a 25 V, 34 A (T_A = 25°C), N-channel DirectFET™ Power MOSFET with 1.3 mΩ R_DS(on) @ 10 V, ultra-low 40 nC total gate charge, and 0.6 mm profile optimized for synchronous buck FETs in CPU core DC-DC converters.

For engineers reviewing the IRF6715MTR1PBF datasheet, IRF6715MTR1PBF pinout, IRF6715MTR1PBF application, or IRF6715MTR1PBF equivalent, key selection criteria include C_dv/dt immunity, dual-sided cooling compatibility, low package inductance, and R_DS(on)/Q_g trade-off balance for high-frequency switching efficiency.

Technical Context

This MOSFET employs HEXFET® silicon in a copper-can DirectFET™ package enabling top- and bottom-side thermal paths, reducing R_θJA to 12.5°C/W with heatsink and delivering 80% lower junction-to-ambient thermal resistance than prior SO-8 equivalents.

It is specifically engineered for synchronous rectification in multiphase VRMs: gate threshold voltage (1.9 V typ.) ensures robust turn-on at 4.5 V drive, while 600 pF Crss and 2.1 mΩ R_DS(on) @ 4.5 V support stable operation under high dV/dt transients in 500 kHz–1 MHz buck stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V max - supports 12 V input rails with margin for transient overshoot in CPU core supplies
R_DS(on)	1.3 mΩ @ 10 V - enables <1 W conduction loss at 34 A, critical for >90% efficiency at high current
Q_g	40 nC typ. - minimizes gate drive power and switching transition time in high-frequency VRMs
C_rss	600 pF - limits Miller-induced false turn-on during high dV/dt commutation in sync-FET position
I_D (T_A = 25°C)	34 A continuous - sustains peak load currents in multi-phase 100+ A CPU power delivery
R_θJC	1.6°C/W - allows direct thermal interface to heatsink or PCB copper, enabling dual-sided cooling
V_GS(th)	1.9 V typ. - ensures reliable enhancement-mode turn-on with standard 4.5–5 V PWM controller outputs

Pinout & Package

DirectFET™ MX package (0.6 mm height, SO-8 footprint); thermally enhanced copper can with exposed drain on top and bottom surfaces. Dual-sided cooling compatible via top-drain and bottom-source thermal interfaces.

Pin/Terminal	Circuit Role	Design Meaning
Top Drain (D)	High-current power path, thermal interface	Exposed copper top surface serves as primary heat extraction path and high-current drain connection
Bottom Source (S)	Power return, thermal interface, gate reference	Source terminals soldered to PCB ground plane provide low-inductance return and secondary thermal path
Gate (G)	Control input	Single gate pad located between source terminals; requires <2 Ω gate resistor to suppress oscillation

Key Features

Feature	Design Value
Ultra-low R_DS(on)/Q_g ratio	32.5 mΩ·nC - reduces combined conduction + switching loss better than SO-8 MOSFETs in 1 MHz VRMs
Dual-sided cooling	Top-drain + bottom-source thermal interfaces - lowers effective R_θJA by 80% vs. conventional packages
C_dv/dt immunity	2.1 mΩ @ 4.5 V + 600 pF Crss - prevents spurious turn-on during fast V_DS transitions in sync-buck high-side switching
Low-profile packaging	0.6 mm height - fits under low-clearance CPU VRM layouts without interfering with socket or heatsink mounting

Applications

CPU Core Voltage Regulator

GPU Power Delivery

Use Scenario: Multiphase buck converter supplying 0.8–1.3 V at up to 200 A to modern x86 or ARM processors.

IC Role / Device Role / Timing Role: Synchronous FET in low-side position, switching at 500 kHz–1 MHz with 4.5 V gate drive.

Use Value: 1.3 mΩ R_DS(on) and 40 nC Q_g reduce total loss to <1.5 W per phase, enabling compact thermal design.

Use Scenario: High-current VRM for discrete or integrated GPUs requiring rapid load transient response.

IC Role / Device Role / Timing Role: Low-side sync-FET in 3–6 phase topology operating at 1 MHz with tight duty-cycle control.

Use Value: Dual-sided cooling maintains T_J < 105°C under 150 A peak load, avoiding thermal throttling.

Server Memory Regulator

AI Accelerator Power Stage

Use Scenario: Point-of-load regulator for DDR5 memory modules with dynamic voltage scaling.

IC Role / Device Role / Timing Role: Low-R_DS(on) FET in 2-phase buck delivering 1.1–1.8 V at 60 A with <10 µs transient recovery.

Use Value: 2.1 mΩ @ 4.5 V ensures stable regulation during burst-mode access, minimizing voltage droop.

Use Scenario: High-efficiency power stage for FPGA or ASIC-based AI inference accelerators.

IC Role / Device Role / Timing Role: Sync-FET in interleaved buck converter operating at 750 kHz with digital PWM control.

Use Value: Ultra-low package inductance (<0.3 nH) prevents shoot-through risk and EMI generation at high di/dt.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF6642TRPBF	Higher R_DS(on) (2.2 mΩ @ 10 V), higher Q_g (47 nC), same DirectFET MX package	Suitable for lower-current VRMs (<25 A/phase); less efficient at full load	Select when cost sensitivity outweighs 8% higher conduction loss at 30 A
SiR872DP-T1-GE3	25 V, 1.1 mΩ @ 10 V, but 52 nC Q_g; PowerPAK® 1212-8 package, single-sided cooling only	Lacks dual-sided thermal path; requires larger PCB copper area for equivalent thermal performance	Prefer for space-constrained layouts where top-side cooling is impractical

Compared with IRF6715MTR1PBF, IRF6642TRPBF trades efficiency for cost in mid-power VRMs, while SiR872DP-T1-GE3 offers lower R_DS(on) but sacrifices thermal flexibility-making IRF6715MTR1PBF optimal for high-density, high-efficiency CPU/GPU power stages demanding dual thermal interfaces.

Availability

IRF6715MTR1PBF is available at Aetrix Electronics and suitable for CPU core voltage regulators, GPU power delivery systems, and AI accelerator power stages requiring stable component supply and consistent parametric performance across production lots.

Supply support for IRF6715MTR1PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the DirectFET™ Power MOSFET product line, designed explicitly for high-frequency, high-efficiency DC-DC conversion in computing and data center power applications where thermal density and switching loss are critical constraints.

FAQ

What is the maximum recommended gate drive voltage for IRF6715MTR1PBF?

The absolute maximum V_GS is ±20 V, but the device is characterized and optimized for 4.5–10 V drive. Using 10 V maximizes R_DS(on) reduction (1.3 mΩ), while 4.5 V provides sufficient turn-on (2.1 mΩ) with lower gate driver stress and reduced risk of overvoltage in noisy environments.

Does IRF6715MTR1PBF require special PCB layout considerations?

Yes: symmetric copper pour under both top-drain and bottom-source terminals is required to enable dual-sided cooling. Thermal vias must connect source pads to inner ground planes, and gate traces should be short with series resistance ≤2 Ω to dampen ringing caused by ultra-low package inductance.

Can IRF6715MTR1PBF be used in avalanche-rated circuits?

No-it is not rated for repetitive avalanche operation. Its 270 mJ single-pulse EAS rating applies only to unclamped inductive switching events under strict conditions (T_J = 25°C, L = 0.56 mH, I_AS = 27 A). System-level protection (e.g., freewheeling diodes, snubbers) is mandatory for inductive loads.

How does its DirectFET™ MX package compare thermally to SO-8 MOSFETs?

With identical PCB footprint, the DirectFET™ MX achieves R_θJA = 12.5°C/W (with heatsink) versus ~60°C/W for standard SO-8, due to direct top-drain copper contact and optimized internal thermal path-reducing junction temperature rise by up to 40°C at 30 A continuous current.

IRF6715MTR1PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: DirectFET™ Isometric MX

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 34A (Ta), 180A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.6mOhm @ 34A, 10V

Vgs(th) (Max) @ Id:: 2.4V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 59 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5340 pF @ 13 V

FET Feature:: -

Power Dissipation (Max):: 2.8W (Ta), 78W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DIRECTFET™ MX

IRF6715MTR1PBF FAQ

1.How can I place an order for IRF6715MTR1PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF6715MTR1PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF6715MTR1PBF reliable?

The price and inventory of IRF6715MTR1PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6715MTR1PBF is usually 5 days.

3.What payment methods are accepted for IRF6715MTR1PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6715MTR1PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF6715MTR1PBF?

IRF6715MTR1PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF6715MTR1PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF6715MTR1PBF?

For technical support, including IRF6715MTR1PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6715MTR1PBF requirements.

6.How does Aetrix verify that IRF6715MTR1PBF is sourced from the original manufacturer or authorized distributors?

All IRF6715MTR1PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6715MTR1PBF meets industry standards.

7.What is the process for return or replacement of IRF6715MTR1PBF?

All IRF6715MTR1PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF6715MTR1PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF6715MTR1PBF part is unused and in its original packaging.

Return procedure for IRF6715MTR1PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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