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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF6715MTRPBF

Name: IRF6715MTRPBF
Brand: Infineon Technologies
SKU: IRF6715MTRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF6715MTRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric MX

Datasheet:: IRF6715MTRPBF.pdf

Description:: MOSFET N-CH 25V 34A DIRECTFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF6715MTRPBF from Infineon Technologies is a 25 V, 34 A (T_A=25°C), ultra-low-R_DS(on) N-channel Power MOSFET in DirectFET^TM package, optimized as synchronous rectifier FET in high-frequency CPU core DC-DC converters. It delivers 1.3 mΩ @ 10 V and 2.1 mΩ @ 4.5 V R_DS(on), with 40 nC total gate charge and 600 pF Crss, enabling low conduction and switching losses in buck topologies.

For engineers reviewing the IRF6715MTRPBF datasheet, IRF6715MTRPBF pinout, IRF6715MTRPBF application, or IRF6715MTRPBF equivalent, key selection criteria include C_dv/dt immunity for synchronous FET operation, dual-sided cooling compatibility, ultra-low package inductance (<1.5 nH), and R_DS(on)/Q_g trade-off balance at 4.5 V drive.

Technical Context

This MOSFET employs HEXFET® silicon in a copper-clip DirectFET^TM package with drain-up topology, enabling dual-sided thermal interface-top-side to heatsink and bottom-side to PCB copper. Its gate threshold voltage (1.9 V typ.) and negative temperature coefficient (−6.2 mV/°C) support stable turn-on across −40°C to +150°C junction range.

The device is characterized for unclamped inductive switching (E_AS = 400 mJ @ I_AS = 27 A) and features high C_dv/dt immunity due to low Crss (600 pF) and optimized gate-drain charge ratio (Q_gd/Q_g = 30%). Body diode reverse recovery (t_rr = 28–42 ns, Q_rr = 37–56 nC) is specified under di/dt = 200 A/µs, supporting hard-switched synchronous rectification.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	25 V - Maximum blocking voltage compatible with 12 V input bus and 1.8 V/1.0 V CPU core rails.
R_DS(on) @ 10 V	1.3 mΩ - Enables <1 W conduction loss at 34 A, critical for >90% efficiency in 1 MHz+ buck converters.
R_DS(on) @ 4.5 V	2.1 mΩ - Ensures robust on-state performance with standard 5 V gate drivers in sync-FET position.
Q_g total	40 nC - Low gate charge reduces driver power and enables fast switching with minimal Miller plateau time.
C_rss	600 pF - Limits dv/dt-induced turn-on risk during high-slew-rate node transitions in synchronous buck.
R_θJC	1.6 °C/W - Thermal resistance from junction to case supports >200 W power dissipation with active top-side cooling.
t_r/t_f	31 ns / 12 ns - Fast edge rates minimize overlap loss in hard-switched synchronous rectifiers.

Pinout & Package

IRF6715MTRPBF uses a 5-pin DirectFET^TM (MX package), with drain connected to top metal pad and source/gate terminals on bottom side. The package has 0.6 mm profile and SO-8 footprint compatibility.

Pin/Terminal	Circuit Role	Design Meaning
Top Metal Pad	Drain (D)	Primary high-current path; thermally and electrically connected to heatsink or VRM ground plane.
Bottom Pin 1	Source (S)	Low-side return for channel current; tied to PCB power ground plane with minimal inductance.
Bottom Pin 2	Gate (G)	Control terminal requiring <40 nC charge; routed away from noisy power loops to prevent false turn-on.
Bottom Pin 3	Source (S)	Second source connection for parallel current path and reduced bond-wire inductance.
Bottom Pin 4	Source (S)	Third source connection enhancing thermal conduction and reducing source inductance in high-di/dt applications.

Key Features

Feature	Design Value
Dual-sided cooling interface	Enables simultaneous top-side heatsink and bottom-side PCB copper thermal paths, improving R_θJA by 80% vs. SO-8.
Ultra-low package inductance	<1.5 nH source/drain loop inductance minimizes voltage overshoot and EMI in >1 MHz switching.
C_dv/dt-immune gate structure	Optimized Q_gd/Q_g ratio and low Crss suppress false turn-on during high-slew-rate node transitions.
100% R_g tested	Guarantees gate resistance ≤2.0 Ω, ensuring consistent turn-on timing and driver stress across production lots.
RoHS-compliant & halogen-free	Meets IPC-1752A material declaration requirements for industrial and computing OEMs.

Applications

CPU Core VRM

GPU Voltage Regulator

Use Scenario: High-current, high-frequency DC-DC converter supplying 1.0–1.8 V to modern x86 or ARM processors.

IC Role / Device Role / Timing Role: Synchronous rectifier FET operating in continuous conduction mode at 500 kHz–1.5 MHz.

Use Value: 1.3 mΩ R_DS(on) and 40 nC Q_g reduce combined conduction/switching loss by >25% vs. legacy SO-8 MOSFETs.

Use Scenario: Multi-phase buck regulator powering discrete or integrated GPU cores with dynamic load steps up to 300 A/µs.

IC Role / Device Role / Timing Role: Low-side sync-FET with fast t_f (12 ns) to minimize dead-time loss and improve transient response.

Use Value: Dual-sided cooling maintains T_J < 105°C under 200 A peak load, enabling compact VRM layout without forced air.

Server Memory Regulator

AI Accelerator Power Stage

Use Scenario: Point-of-load converter delivering 1.2 V @ 60 A to DDR5 memory modules with tight voltage tolerance (±3%).

IC Role / Device Role / Timing Role: Primary output switch in 2-phase interleaved buck, driven by digital PWM controller.

Use Value: Low Crss (600 pF) prevents shoot-through during phase interleaving with 180° offset and high dv/dt.

Use Scenario: High-density power stage for ASIC-based AI training accelerators requiring 0.8 V @ 400 A per module.

IC Role / Device Role / Timing Role: Sync-FET in multiphase buck with 3D stacked inductor integration and bottom-side cooling.

Use Value: 0.6 mm profile allows placement under FPGA/ASIC packages; R_θJC = 1.6 °C/W enables direct die-to-heatsink thermal path.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous rectifier FET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF6642TRPBF	R_DS(on) = 1.7 mΩ @ 10 V; Q_g = 32 nC; Crss = 550 pF; same MX package	Slightly higher R_DS(on) but lower Q_g improves light-load efficiency in variable-frequency controllers	Select when optimizing for partial-load efficiency over full-load conduction loss.
SiR626DP-T1-GE3	R_DS(on) = 1.2 mΩ @ 10 V; Q_g = 47 nC; Crss = 720 pF; PowerPAK^® SO-8 package	Lower R_DS(on) but higher Crss increases C_dv/dt sensitivity; no top-side cooling capability	Prefer only in space-constrained layouts where top-side heatsinking is unavailable.

Compared with IRF6642TRPBF and SiR626DP-T1-GE3, the IRF6715MTRPBF uniquely balances ultra-low R_DS(on), moderate Q_g, and industry-leading C_dv/dt immunity within a dual-cooled package-making it optimal for high-reliability, high-frequency CPU/GPU VRMs where thermal headroom and noise immunity are co-critical.

Availability

IRF6715MTRPBF is available at Aetrix Electronics and suitable for CPU core VRMs, GPU voltage regulators, server memory regulators, and AI accelerator power stages requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRF6715MTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The DirectFET^TM product line was engineered specifically for high-efficiency, high-density DC-DC conversion in computing and datacenter applications-prioritizing thermal performance, switching speed, and layout compatibility over legacy package constraints.

FAQ

What is the maximum continuous drain current at 70°C ambient?

The IRF6715MTRPBF supports 200 A continuous drain current at T_C = 25°C, but at T_A = 70°C with standard PCB mounting, its rated continuous current is 18 A (V_GS = 10 V). This derating reflects thermal limits of the DirectFET package under natural convection on a 1 in² copper board, not silicon capability.

Does this MOSFET require a negative gate voltage to ensure safe turn-off?

No. The IRF6715MTRPBF has a gate threshold voltage of 1.4–2.4 V and is fully enhanced at 0 V gate-source bias. A negative gate voltage is unnecessary for reliable turn-off; however, a −2 V to 0 V gate drive improves noise margin in high-dv/dt environments per AN-1035 guidelines.

Can IRF6715MTRPBF be used in avalanche-rated applications?

Yes-it is rated for single-pulse avalanche energy up to 400 mJ (I_AS = 27 A, starting T_J = 25°C). However, repetitive avalanche operation is not characterized or guaranteed; the device is intended for clamped inductive switching in synchronous buck topologies, not unclamped flyback or ZVS circuits.

How does the DirectFET MX package differ from standard SO-8 in PCB layout?

The MX package shares the SO-8 outline but relocates the drain to the top metal pad and uses three bottom-side source pins plus one gate pin. Layout requires a large top-side thermal pad (solder-mask defined) and separate gate trace routing-no internal leadframe; all current paths are copper-clip based per Figure 7 in the datasheet.

IRF6715MTRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: DirectFET™ Isometric MX

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 34A (Ta), 180A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.6mOhm @ 34A, 10V

Vgs(th) (Max) @ Id:: 2.4V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 59 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5340 pF @ 13 V

FET Feature:: -

Power Dissipation (Max):: 2.8W (Ta), 78W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DIRECTFET™ MX

IRF6715MTRPBF FAQ

1.How can I place an order for IRF6715MTRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF6715MTRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF6715MTRPBF reliable?

The price and inventory of IRF6715MTRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6715MTRPBF is usually 5 days.

3.What payment methods are accepted for IRF6715MTRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6715MTRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF6715MTRPBF?

IRF6715MTRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF6715MTRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF6715MTRPBF?

For technical support, including IRF6715MTRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6715MTRPBF requirements.

6.How does Aetrix verify that IRF6715MTRPBF is sourced from the original manufacturer or authorized distributors?

All IRF6715MTRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6715MTRPBF meets industry standards.

7.What is the process for return or replacement of IRF6715MTRPBF?

All IRF6715MTRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF6715MTRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF6715MTRPBF part is unused and in its original packaging.

Return procedure for IRF6715MTRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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