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Infineon Technologies IRF6716MTR1PBF
- Part No.:
- IRF6716MTR1PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- DirectFET™ Isometric MX
- Datasheet:
-
IRF6716MTR1PBF.pdf
- Description:
- MOSFET N-CH 25V 39A DIRECTFET
- Quantity:
- Payment:
- Shipping:
Inventory:3,223
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Product details
Overview
IRF6716MTR1PBF from Infineon Technologies (formerly International Rectifier) is an N-channel Power MOSFET in DirectFET® packaging, optimized for synchronous buck converter high-side and low-side FET roles. It delivers 1.2 mΩ RDS(on) @ 10 V, 39 nC total gate charge, and 2.0 mΩ @ 4.5 V - enabling high-efficiency, high-frequency DC-DC conversion for CPU core power delivery.
For engineers reviewing the IRF6716MTR1PBF datasheet, IRF6716MTR1PBF pinout, IRF6716MTR1PBF application, or IRF6716MTR1PBF equivalent, key selection criteria include Cdv/dt immunity for noise robustness in synchronous rectification, ultra-low package inductance (<0.5 nH), dual-sided cooling capability, and thermal resistance RθJC = 1.6 °C/W.
Technical Context
This MOSFET employs HEXFET® silicon with trench-gate process and is packaged in a copper-clad DirectFET® outline (SQ variant), where drain connects directly to top and bottom metal surfaces for bidirectional heat extraction. Its gate threshold voltage (1.9 V typ.) and steep transconductance (220 S) support fast, controlled turn-on at low drive voltages.
The device is characterized for unclamped inductive switching (UIS) with 1400 mJ single-pulse avalanche energy at IAS = 32 A, and features body diode recovery time (trr = 28 ns typ.) and reverse recovery charge (Qrr = 28 nC) validated under di/dt = 200 A/µs - critical for synchronous FET dead-time management.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| RDS(on) @ 10 V | 1.2 mΩ - enables <1 W conduction loss at 32 A continuous current in compact DC-DC phases |
| RDS(on) @ 4.5 V | 2.0 mΩ - supports efficient operation with 5 V gate drive in intermediate bus converters |
| Qg total | 39 nC - reduces gate driver power demand and switching transition time in >500 kHz designs |
| Ciss | 5150 pF - impacts Miller effect and gate drive loop stability in high dv/dt environments |
| RθJC | 1.6 °C/W - allows direct heatsink mounting to top drain surface, improving thermal path by 80% vs SO-8 |
| VGS(th) | 1.9 V (typ.) - ensures reliable turn-on with standard logic-level drivers and low-voltage controllers |
| EAS | 1400 mJ - sustains repetitive unclamped inductive energy during transient overloads without failure |
Pinout & Package
IRF6716MTR1PBF uses the DirectFET® SQ package (0.6 mm profile, 3.85 × 4.80 mm footprint), with top and bottom drain terminals, source on periphery, and gate on side edge - enabling dual-sided PCB cooling and compatibility with SO-8 layout patterns.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Top Drain / Bottom Drain | Power Drain (D) | Electrically common high-current output node; thermally connected to both PCB copper layers for symmetric heat spreading |
| Source Pad (perimeter) | Source (S) | Low-impedance return path for load current; soldered to ground plane or source trace with minimal loop inductance |
| Gate Pad (side edge) | Gate (G) | Control input requiring <1.6 Ω series resistance to damp ringing; sensitive to layout parasitics due to low Qgd/Qgs2 ratio |
Key Features
| Feature | Design Value |
|---|---|
| Dual-sided cooling interface | Top and bottom drain metallization enables simultaneous thermal contact with heatsink and PCB ground plane - reducing effective RθJA to 12.5 °C/W on 1-in² Cu board |
| Ultra-low package inductance | <0.5 nH source-inductance - minimizes voltage overshoot during hard-switching and improves EMI performance in multiphase VRMs |
| Cdv/dt-induced turn-on immunity | Validated for high dV/dt noise immunity in synchronous FET position - prevents false turn-on during high-side switching transitions |
| Optimized for synchronous buck | Balance of RDS(on), Qg, and Qgd targets lowest figure-of-merit (RDS(on) × Qg = 46.8 mΩ·nC) for 12 V–1 V conversion stages |
Applications
| Server CPU Core VRM | GPU Power Delivery |
|---|---|
Use Scenario: High-current, multi-phase buck converter supplying 0.8–1.2 V @ up to 300 A to modern x86 and ARM server processors. IC Role / Device Role / Timing Role: Low-side synchronous FET handling continuous high RMS current with minimal conduction loss and fast body diode recovery. Use Value: 1.2 mΩ RDS(on) and 28 ns trr reduce phase loss by >15% vs prior-generation MOSFETs, enabling higher efficiency at 90+ A/phase. | Use Scenario: Compact, high-density power stage on GPU PCB delivering dynamic 0.7–1.3 V supply with rapid load transients up to 200 A/µs. IC Role / Device Role / Timing Role: High-side FET operating at 300–1000 kHz with tight dead-time control enabled by low Qgd/Qgs2 ratio. Use Value: 12 nC Qgd and 5.3 nC Qgs2 minimize Miller plateau duration, allowing shorter dead time without shoot-through risk. |
| Telecom Baseband PSU | Industrial FPGA Core Supply |
Use Scenario: 48 V–12 V intermediate bus converter feeding point-of-load regulators in 5G baseband units. IC Role / Device Role / Timing Role: Primary switch in active-clamp forward or LLC resonant topology, stressed by high VDS and repetitive UIS events. Use Value: 1400 mJ EAS rating and 25 V VDSS margin ensure reliability under line surge and short-circuit conditions. | Use Scenario: Programmable logic core supply requiring stable 0.85–1.1 V at 50–120 A with strict ripple and transient response specs. IC Role / Device Role / Timing Role: Low-side FET in 2-phase interleaved buck, leveraging dual-sided cooling to maintain TJ < 105°C at full load. Use Value: RθJC = 1.6 °C/W and 0.6 mm profile allow integration into thermally constrained mezzanine modules without external heatsinks. |
Availability
IRF6716MTR1PBF is available at Aetrix Electronics and suitable for server CPU VRMs, GPU power delivery systems, and telecom intermediate bus converters requiring stable component supply and long-term industrial availability.
Supply support for IRF6716MTR1PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with deep expertise in silicon and wide-bandgap technologies.
The DirectFET® Power MOSFET product line was engineered specifically for high-frequency, high-efficiency DC-DC conversion in computing and communications infrastructure - prioritizing thermal performance, switching speed, and layout compatibility over legacy package constraints.
FAQ
What is the maximum continuous drain current at TC = 25°C?
The IRF6716MTR1PBF supports 330 A continuous drain current at case temperature of 25°C with VGS = 10 V, as specified in the Absolute Maximum Ratings table. This rating assumes ideal heatsinking and is limited by package thermal resistance (RθJC = 1.6 °C/W) and silicon safe operating area.
Does this MOSFET require a negative gate voltage for reliable turn-off?
No. The device has a gate threshold voltage of 1.9 V (typ.) and is fully enhanced at VGS ≥ 4.5 V. A gate drive swing of 0 V to 10 V is sufficient for robust turn-on/turn-off; negative bias is not required or recommended per the datasheet.
Can IRF6716MTR1PBF be used in parallel configurations?
Yes - its positive temperature coefficient of RDS(on) (17 mV/°C breakdown voltage drift) and matched threshold voltage distribution enable stable current sharing. Layout symmetry, individual gate resistors (≥1 Ω), and Kelvin source connections are required to maintain balance across paralleled units.
Is the DirectFET® SQ package RoHS-compliant and halogen-free?
Yes. The IRF6716MTR1PBF is explicitly marked RoHS-compliant and halogen-free per manufacturer documentation, with lead-free matte tin plating on all terminations and no brominated flame retardants in the molding compound.
IRF6716MTR1PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- DirectFET™ Isometric MX
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 25 V
- Current - Continuous Drain (Id) @ 25°C:
- 39A (Ta), 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 1.6mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id:
- 2.4V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:
- 59 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5150 pF @ 13 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.6W (Ta), 78W (Tc)
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DIRECTFET™ MX
IRF6716MTR1PBF FAQ
1.How can I place an order for IRF6716MTR1PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF6716MTR1PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF6716MTR1PBF reliable?
The price and inventory of IRF6716MTR1PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6716MTR1PBF is usually 5 days.
3.What payment methods are accepted for IRF6716MTR1PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6716MTR1PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF6716MTR1PBF?
IRF6716MTR1PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF6716MTR1PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF6716MTR1PBF?
For technical support, including IRF6716MTR1PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6716MTR1PBF requirements.
6.How does Aetrix verify that IRF6716MTR1PBF is sourced from the original manufacturer or authorized distributors?
All IRF6716MTR1PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6716MTR1PBF meets industry standards.
7.What is the process for return or replacement of IRF6716MTR1PBF?
All IRF6716MTR1PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF6716MTR1PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF6716MTR1PBF part is unused and in its original packaging.
Return procedure for IRF6716MTR1PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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