Infineon Technologies IRF6718L2TR1PBF

Overview

IRF6718L2TR1PBF from Infineon Technologies is a 25 V, 61 A N-channel DirectFET® Power MOSFET in a low-inductance, dual-sided cooling package with R_DS(on) = 0.50 mΩ @ 10 V and Q_g = 64 nC. It serves as a high-efficiency main power switch in active O-Ring, eFuse, and hot-swap circuits where ultra-low conduction loss and fast switching are critical under high-current DC bus conditions.

For engineers reviewing the IRF6718L2TR1PBF datasheet, IRF6718L2TR1PBF pinout, IRF6718L2TR1PBF application, or IRF6718L2TR1PBF equivalent, key selection criteria include its 0.50 mΩ on-resistance at 10 V gate drive, 64 nC total gate charge, 1.9 V gate threshold voltage, 25 V breakdown rating, and DirectFET S1 package thermal performance for dual-sided heatsinking.

Technical Context

This MOSFET uses HEXFET® silicon optimized for low R_DS(on) and low Q_gd/Q_g ratio (20 nC / 64 nC), enabling fast, low-loss switching in high-current, low-voltage DC bus protection. Its 1.9 V V_GS(th) ensures robust turn-on with standard 3.3 V or 5 V logic-level gate drivers.

The DirectFET S1 package places source and drain terminals on opposite sides of the die, enabling simultaneous top-side (drain) and bottom-side (source) thermal interface to heatsinks. This architecture reduces R_θJC to 1.8 °C/W and supports >270 W continuous power dissipation at T_C = 25 °C.

Key Specifications

Pinout & Package

The IRF6718L2TR1PBF uses the DirectFET® S1 package - a surface-mount, leadless, double-sided thermal package with no traditional leads. Drain connects to the top metal pad; Source connects to the bottom metal pad; Gate is accessed via a small side terminal. The package footprint matches standard D-Pak layouts but delivers significantly lower inductance and superior thermal resistance.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Compared with IRF6722L2TRPBF and SiR626DP, the IRF6718L2TR1PBF delivers the lowest R_DS(on) and best thermal resistance among S1- and comparable-footprint MOSFETs, making it optimal for high-current, thermally constrained active O-Ring and eFuse implementations requiring minimal voltage drop and maximum power density.

Availability

IRF6718L2TR1PBF is available at Aetrix Electronics and suitable for active O-Ring protection, eFuse circuits, and hot-swap controller interfaces requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRF6718L2TR1PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The IRF6718L2TR1PBF belongs to Infineon's DirectFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability DC bus protection in datacenter, telecom, and industrial power systems where low R_DS(on), fast switching, and dual-sided thermal management are mandatory.

FAQ

What is the maximum continuous drain current at 70°C ambient temperature?

The IRF6718L2TR1PBF supports 49 A continuous drain current at T_A = 70 °C when mounted on a 1 in² copper board with still air. This rating assumes proper PCB copper area, thermal vias, and adherence to AN-1035 assembly guidelines for DirectFET packages. Derating is linear at 0.029 W/°C above 70 °C ambient.

Can this MOSFET be used with 3.3 V gate drive?

Yes - with V_GS(th) = 1.9 V (typical) and R_DS(on) = 1.0 mΩ @ 4.5 V, the device fully enhances at 3.3 V gate drive, delivering ~60% of its rated 61 A current. For full 61 A performance, 4.5 V or higher gate voltage is required per datasheet Fig. 9 and Table "R_DS(on) Static".

Is the IRF6718L2TR1PBF suitable for avalanche operation?

Yes - it is rated for 530 mJ single-pulse avalanche energy (E_AS) at T_J = 25 °C. Repetitive avalanche is permitted provided junction temperature remains below 175 °C and pulse conditions comply with AN-1005 guidelines, including limiting duty cycle and using Z_thJC curves for thermal validation.

What is the recommended gate resistor value for hot-swap applications?

A 1.0 Ω to 2.2 Ω non-inductive gate resistor is recommended to suppress oscillation during fast dI/dt events (>100 A/μs). Lower values (≤1.0 Ω) improve switching speed but require careful PCB layout to avoid gate ringing; higher values (>2.2 Ω) reduce EMI but increase switching losses in high-frequency eFuse control loops.