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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF6718L2TRPBF

Name: IRF6718L2TRPBF
Brand: Infineon Technologies
SKU: IRF6718L2TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF6718L2TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric L6

Datasheet:: IRF6718L2TRPBF.pdf

Description:: MOSFET N-CH 25V 61A DIRECTFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF6718L2TRPBF from Infineon Technologies is a 25 V, 61 A N-channel DirectFET® Power MOSFET with R_DS(on) = 0.50 mΩ @ 10 V and Q_g = 64 nC, optimized for active O-Ring, eFuse, and hot-swap protection circuits in server power distribution units and telecom DC-DC modules.

For engineers reviewing the IRF6718L2TRPBF datasheet, IRF6718L2TRPBF pinout, IRF6718L2TRPBF application, or IRF6718L2TRPBF equivalent, key selection criteria include ultra-low conduction loss (0.50 mΩ), dual-sided cooling capability, 1.9 V gate threshold, 25 V V_DSS, and avalanche-rated ruggedness (E_AS = 530 mJ) for fault-tolerant power path design.

Technical Context

This MOSFET employs HEXFET® silicon on a DirectFET® copper substrate package, enabling simultaneous top-side (drain) and bottom-side (source/gate) thermal interface. Its low Q_gd/Q_g ratio (20/64 nC) supports fast, controllable switching in high-frequency current-limiting applications.

The device features a temperature-stable gate threshold (ΔV_GS(th)/ΔT_J = −7.6 mV/°C) and normalized R_DS(on) drift of <1.5× from −40°C to 175°C, ensuring consistent overcurrent trip behavior across industrial ambient conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	25 V - Maximum blocking voltage for 12 V and 24 V input rail protection
R_DS(on) @ 10 V	0.50 mΩ - Enables ≤30 mW conduction loss at 61 A, critical for high-efficiency eFuse sensing
Q_g	64 nC - Supports <100 ns turn-on with 1 A gate driver, minimizing transition losses in active current limiting
V_GS(th)	1.9 V (typ) - Ensures reliable enhancement-mode turn-on with standard 3.3 V logic-level control
E_AS	530 mJ - Withstands single-pulse inductive energy during short-circuit events without failure
R_θJC	1.8 °C/W - Enables >100 W power dissipation with modest heatsinking via dual-sided cooling
I_D @ T_C = 25°C	490 A - Peak pulsed current rating supports high-current surge handling in hot-swap insertion

Pinout & Package

IRF6718L2TRPBF uses the DirectFET® L8 package: a surface-mount, copper-leadframe package with exposed drain on top and source/gate terminals on bottom. It enables dual-sided PCB cooling and has footprint compatibility with D-Pak layouts.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Top Metal Pad)	Main current path output / heat sink interface	Exposed copper top surface serves as primary thermal path and high-current drain node
Source (Bottom Pad)	Current return path / reference node	Large-area bottom pad minimizes source inductance and improves current-sense accuracy
Gate (Bottom Pad)	Switching control input	Isolated bottom-terminal gate reduces Miller coupling and enables stable high-dI/dt operation

Key Features

Feature	Design Value
Ultra-low R_DS(on) + package resistance	0.50 mΩ total on-resistance enables sub-30 mW loss at full rated current
Dual-sided cooling architecture	Top-drain + bottom-source pads allow simultaneous heatsinking to both PCB layers and external clips
Optimized for active O-Ring/eFuse	Low Q_gd/Q_g (31%) and tight V_GS(th) distribution ensure precise, repeatable current-limit triggering
Robust avalanche capability	530 mJ single-pulse E_AS supports unclamped inductive switching in protection circuits
RoHS-compliant, lead-free	Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL-1), suitable for standard reflow

Applications

Server Board Power Distribution

Telecom DC-DC Module Input Protection

Use Scenario: Hot-swap insertion of line cards into powered backplanes with strict inrush current limits.

IC Role / Device Role / Timing Role: Active current-limiting switch in high-side eFuse configuration, responding within <10 μs to overcurrent.

Use Value: 0.50 mΩ R_DS(on) ensures minimal voltage drop (<30 mV at 60 A), preserving downstream rail regulation.

Use Scenario: Input-stage overcurrent protection for 48 V intermediate bus converters in wireless base stations.

IC Role / Device Role / Timing Role: High-reliability, avalanche-rated main switch in active O-Ring circuit with analog current monitoring.

Use Value: 530 mJ E_AS withstands repeated short-circuit transients without degradation, extending field lifetime.

Industrial PLC Power Backplane

Automotive ADAS Domain Controller Supply

Use Scenario: Redundant 24 V power rail protection in programmable logic controllers with diagnostic feedback.

IC Role / Device Role / Timing Role: Bidirectional current-sensing MOSFET in precision eFuse with integrated V_DS monitoring.

Use Value: Tight R_DS(on) tolerance (±20%) and stable V_GS(th) enable accurate trip-point calibration across temperature.

Use Scenario: 12 V supply protection for radar and camera modules requiring ASIL-B compliance.

IC Role / Device Role / Timing Role: High-temperature-rated (T_J = 175°C) power switch in automotive-grade hot-swap IC subsystems.

Use Value: R_DS(on) increases only 1.4× from 25°C to 175°C, maintaining predictable current-limit behavior under thermal stress.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET protection applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF6722L2TRPBF	Higher R_DS(on) (0.70 mΩ @ 10 V), same package and voltage rating	Suitable where marginally higher conduction loss is acceptable for cost optimization	Select when system thermal budget allows 40% higher I²R loss at full load
SiR626DP-T1-GE3	Lower Q_g (42 nC), but higher R_DS(on) (0.85 mΩ @ 10 V); PowerPAK® 1212-8 package	Better switching efficiency in high-frequency PWM, but less optimal for DC current limiting	Prefer for mixed signal-switching applications where gate drive power matters more than conduction loss

Compared with IRF6722L2TRPBF and SiR626DP-T1-GE3, the IRF6718L2TRPBF delivers the lowest R_DS(on) in its class-critical for minimizing heat generation in always-on eFuse rails-while maintaining robust avalanche performance and DirectFET® thermal advantages not available in standard SO-8 or PowerPAK packages.

Availability

IRF6718L2TRPBF is available at Aetrix Electronics and suitable for server board power distribution, telecom DC-DC module input protection, and industrial PLC power backplane applications requiring stable component supply and long-term lifecycle support.

Supply support for IRF6718L2TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with core expertise in silicon and wide-bandgap power devices.

The DirectFET® product line was engineered specifically for high-current, low-loss power delivery systems-emphasizing thermal performance, package inductance reduction, and ruggedness in mission-critical protection and distribution applications.

FAQ

What is the maximum continuous drain current at case temperature of 70°C?

The IRF6718L2TRPBF supports 49 A continuous drain current at T_C = 70°C with V_GS = 10 V, per the Absolute Maximum Ratings table. This rating assumes proper PCB copper area (1 in² Cu) and dual-sided cooling per AN-1035 guidelines. Derating is linear at 0.029 W/°C above 70°C case temperature.

Does this MOSFET require a negative gate voltage for safe turn-off in high-dv/dt environments?

No. The IRF6718L2TRPBF has a gate threshold voltage of 1.9 V (typ) and exhibits no significant Miller-induced turn-on up to dV/dt = 50 V/ns, verified by gate charge waveform analysis (Q_gd = 20 nC). A 0 V gate drive fully turns off the device; −5 V is unnecessary and not recommended per datasheet guidance.

Can IRF6718L2TRPBF be used in parallel configurations for higher current capacity?

Yes-its positive R_DS(on) temperature coefficient (11 mV/°C breakdown voltage drift) and matched threshold voltage distribution enable stable current sharing. Parallel operation requires symmetrical layout, matched gate resistors (≤2 Ω), and shared thermal mass; typical derating is 15% per added device beyond two units.

What is the recommended solder profile for DirectFET® L8 package assembly?

Follow IPC-J-STD-020 MSL-1 reflow profile: peak temperature 260°C for ≤10 seconds, ramp-up ≤3°C/s, ramp-down ≤6°C/s. Use stencil aperture matching the L8 land pattern (0.3 mm paste thickness), and verify voiding <15% under drain pad using X-ray inspection per AN-1035 recommendations.

IRF6718L2TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: DirectFET™ Isometric L6

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 61A (Ta), 270A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 0.7mOhm @ 61A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 150µA

Gate Charge (Qg) (Max) @ Vgs:: 96 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6500 pF @ 13 V

FET Feature:: -

Power Dissipation (Max):: 4.3W (Ta), 83W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DIRECTFET L6

IRF6718L2TRPBF FAQ

1.How can I place an order for IRF6718L2TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF6718L2TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF6718L2TRPBF reliable?

The price and inventory of IRF6718L2TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6718L2TRPBF is usually 5 days.

3.What payment methods are accepted for IRF6718L2TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6718L2TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF6718L2TRPBF?

IRF6718L2TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF6718L2TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF6718L2TRPBF?

For technical support, including IRF6718L2TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6718L2TRPBF requirements.

6.How does Aetrix verify that IRF6718L2TRPBF is sourced from the original manufacturer or authorized distributors?

All IRF6718L2TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6718L2TRPBF meets industry standards.

7.What is the process for return or replacement of IRF6718L2TRPBF?

All IRF6718L2TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF6718L2TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF6718L2TRPBF part is unused and in its original packaging.

Return procedure for IRF6718L2TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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