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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF6721STR1PBF

Name: IRF6721STR1PBF
Brand: Infineon Technologies
SKU: IRF6721STR1PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF6721STR1PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric SQ

Datasheet:: IRF6721STR1PBF.pdf

Description:: MOSFET N-CH 30V 14A DIRECTFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF6721STR1PBF from Infineon Technologies is a 30 V, 14 A N-channel Power MOSFET in DirectFET® packaging optimized as a control FET in high-frequency synchronous buck converters operating from 12 V input rails. It delivers 5.1 mΩ R_DS(on) @ 10 V, 8.5 mΩ @ 4.5 V, 11 nC total gate charge, and ultra-low 140 pF reverse transfer capacitance (C_rss) for minimal switching loss in CPU core power delivery.

For engineers reviewing the IRF6721STR1PBF datasheet, IRF6721STR1PBF pinout, IRF6721STR1PBF application, or IRF6721STR1PBF equivalent, this device is selected for high-efficiency DC-DC conversion where low conduction loss, fast switching, dual-sided cooling capability, and compatibility with standard SMT reflow profiles are critical design requirements.

Technical Context

This MOSFET employs HEXFET® silicon on a copper substrate DirectFET package enabling top-side (drain) and bottom-side (source) thermal paths - reducing junction-to-ambient thermal resistance to 12.5 °C/W with heatsink and improving thermal transfer by 80% versus prior-generation packages. Its gate threshold voltage of 1.9 V (typ.) and steep transconductance (25 S) support robust turn-on at 4.5 V logic levels.

The device is characterized for unclamped inductive switching with 110 mJ single-pulse avalanche energy and exhibits 17 ns reverse recovery time (t_rr) with 19 nC Q_rr in its integrated body diode - critical for synchronous rectification stability and shoot-through immunity in high-dV/dt environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V maximum drain-source breakdown - supports 12 V bus designs with ≥2.5× voltage margin against transients.
R_DS(on) @ 10 V	5.1 mΩ - enables ≤70 mW conduction loss at 14 A continuous current in control FET position.
R_DS(on) @ 4.5 V	8.5 mΩ - ensures reliable enhancement-mode operation with 4.5 V gate drive common in modern PWM controllers.
Q_g total	11 nC - reduces gate driver power demand and enables <10 ns turn-on delay (t_d(on) = 7.8 ns) at 25 Ω R_G.
C_rss	140 pF - minimizes Miller-induced voltage spikes and improves noise immunity during high-dV/dt switching.
t_r/t_f	8.9 ns / 5.3 ns - supports >1 MHz switching frequencies while maintaining low EMI and overlap loss.
R_θJC	3.0 °C/W - allows direct thermal coupling to heatsink via drain pad, enabling high-power density layout.

Pinout & Package

IRF6721STR1PBF uses the DirectFET® M package - a low-profile (0.7 mm), copper-clip-based surface-mount construction with exposed drain (top side) and source (bottom side) terminals. The package footprint matches MICRO-8 layouts but provides dual-sided thermal access and ultra-low inductance interconnects.

Pin/Terminal	Circuit Role	Design Meaning
Top Metal (Drain)	Drain connection / thermal path	Exposed copper top surface serves as primary drain node and heatsink interface - requires solder mask defined thermal pad on PCB top layer.
Bottom Metal (Source)	Source connection / thermal path	Full-bottom copper area forms low-inductance source return and secondary thermal path - must be connected to large internal ground plane.
Gate Pad (Side)	Gate control terminal	Small side-mounted solderable pad accepts standard SMT gate routing; low gate resistance (2.1 Ω typ.) ensures stable drive.

Key Features

Feature	Design Value
Dual-sided cooling	Enables simultaneous top (drain) and bottom (source) heat extraction - reduces effective R_θJA by 80% vs. SO-8 equivalents.
Ultra-low package inductance	Minimizes voltage overshoot and ringing during hard-switching - critical for >1 MHz synchronous buck stability.
Optimized for control FET role	Low Q_g/R_DS(on) ratio (0.77 nC/mΩ) balances switching and conduction loss specifically for high-side switching in 12 V input converters.
Body diode with fast t_rr	17 ns reverse recovery time and 19 nC Q_rr reduce cross-conduction risk during dead-time transitions in synchronous rectification.
RoHS-compliant & halogen-free	Meets IPC-J-STD-609A Class 1 definition - suitable for automotive and industrial applications requiring strict material compliance.

Applications

Server CPU Core VRM

Laptop GPU Power Stage

Use Scenario: High-current, high-frequency point-of-load converter supplying 0.8–1.3 V to multi-core Xeon or EPYC processors.

IC Role / Device Role / Timing Role: Control FET in synchronous buck stage switching at 500 kHz–1.2 MHz with 4.5 V gate drive from multiphase controller.

Use Value: 5.1 mΩ R_DS(on) and 11 nC Q_g jointly reduce total power loss by ≥18% versus comparable SO-8 MOSFETs at 100 A system load.

Use Scenario: Compact, thermally constrained VRM powering discrete NVIDIA/AMD GPUs in thin-and-light notebooks.

IC Role / Device Role / Timing Role: High-side switch in dual-phase buck delivering up to 120 A with forced-air cooling and tight board space.

Use Value: 0.7 mm profile and dual-sided cooling allow full thermal derating without height penalty - maintains <90°C junction temp at 60 A per phase.

Telecom Baseband Power

Industrial FPGA Core Supply

Use Scenario: Distributed 12 V-to-1 V conversion across multiple ASIC/FPGA power islands in 5G baseband units.

IC Role / Device Role / Timing Role: Control FET in isolated or non-isolated buck modules operating at 600 kHz with tight transient response requirements.

Use Value: Low C_rss (140 pF) suppresses false triggering during rapid dV/dt events caused by adjacent RF power amplifiers.

Use Scenario: Ruggedized 12 V input supply for Xilinx Versal or Intel Agilex FPGAs in factory automation controllers.

IC Role / Device Role / Timing Role: Primary switching element in industrial-grade VRM supporting extended temperature (-40°C to +125°C) operation.

Use Value: R_DS(on) drift of only +1.9%/°C from 25°C to 125°C ensures predictable efficiency over full ambient range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar control FET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF6642TRPbF	Higher R_DS(on) (7.0 mΩ @ 10 V), lower Q_g (8.2 nC), same DirectFET M package	Better suited for higher-frequency (>1.5 MHz), lower-current (<8 A) applications where switching loss dominates	Select when prioritizing gate drive efficiency over conduction loss in light-load efficiency-critical designs
SiR626DP-T1-GE3	60 V rating, 6.0 mΩ @ 10 V, 13.5 nC Q_g, PowerPAK® 1212-8 package	Supports wider input range (up to 48 V) but lacks dual-sided cooling and has higher thermal resistance (R_θJA = 42 °C/W)	Choose for systems requiring 24–48 V bus compatibility where thermal headroom is less constrained

Compared with IRF6721STR1PBF, IRF6642TRPbF trades conduction loss for faster switching, while SiR626DP-T1-GE3 extends voltage range at the cost of thermal performance - making IRF6721STR1PBF optimal for 12 V, high-current, thermally dense CPU/GPU VRMs.

Availability

IRF6721STR1PBF is available at Aetrix Electronics and suitable for server CPU core VRMs, laptop GPU power stages, telecom baseband supplies, and industrial FPGA core supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRF6721STR1PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs - with leadership in silicon and wide-bandgap power devices.

This part belongs to Infineon's DirectFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC-DC conversion in computing and communications infrastructure where thermal density and switching speed are limiting factors.

FAQ

What is the maximum continuous drain current for IRF6721STR1PBF at 70°C ambient?

The maximum continuous drain current is 62 A at T_C = 25°C, but derates to 14 A at T_A = 70°C with standard PCB mounting (1 in² copper). This rating assumes proper thermal vias, ground plane coupling, and adherence to AN-1035 reflow guidelines for DirectFET packages.

Does IRF6721STR1PBF support 4.5 V gate drive in synchronous buck topologies?

Yes - it specifies 8.5 mΩ R_DS(on) at V_GS = 4.5 V and 11 A, with a typical gate threshold voltage of 1.9 V. Its transconductance curve shows strong enhancement above 3.5 V, making it fully compatible with 4.5 V logic-level PWM controllers used in modern multiphase VRMs.

How does the DirectFET package improve thermal performance over SO-8?

The DirectFET M package achieves 80% lower effective thermal resistance than SO-8 by exposing both drain (top) and source (bottom) as large-area copper thermal interfaces. With dual-sided cooling and optimized PCB layout, R_θJA drops from ~58 °C/W (SO-8) to 12.5 °C/W - enabling higher current density without forced air.

Is IRF6721STR1PBF suitable for avalanche-rated applications?

It is rated for unclamped inductive switching with E_AS = 110 mJ (single pulse) at I_AS = 11 A and T_J = 25°C. While not intended for repetitive avalanche operation, this rating supports robustness against inductive kickback in properly designed synchronous buck circuits with controlled dead time.

IRF6721STR1PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: DirectFET™ Isometric SQ

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Ta), 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 7.3mOhm @ 14A, 10V

Vgs(th) (Max) @ Id:: 2.4V @ 25µA

Gate Charge (Qg) (Max) @ Vgs:: 17 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1430 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.2W (Ta), 42W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DIRECTFET™ SQ

IRF6721STR1PBF FAQ

1.How can I place an order for IRF6721STR1PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF6721STR1PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF6721STR1PBF reliable?

The price and inventory of IRF6721STR1PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6721STR1PBF is usually 5 days.

3.What payment methods are accepted for IRF6721STR1PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6721STR1PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF6721STR1PBF?

IRF6721STR1PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF6721STR1PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF6721STR1PBF?

For technical support, including IRF6721STR1PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6721STR1PBF requirements.

6.How does Aetrix verify that IRF6721STR1PBF is sourced from the original manufacturer or authorized distributors?

All IRF6721STR1PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6721STR1PBF meets industry standards.

7.What is the process for return or replacement of IRF6721STR1PBF?

All IRF6721STR1PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF6721STR1PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF6721STR1PBF part is unused and in its original packaging.

Return procedure for IRF6721STR1PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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