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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF6722MTR1PBF

Name: IRF6722MTR1PBF
Brand: Infineon Technologies
SKU: IRF6722MTR1PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF6722MTR1PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric MP

Datasheet:: IRF6722MTR1PBF.pdf

Description:: MOSFET N-CH 30V 13A DIRECTFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF6722MTR1PBF from Infineon Technologies (formerly International Rectifier) is a 30 V, 13 A N-channel Power MOSFET in DirectFET® packaging optimized as a control FET in high-frequency synchronous buck converters operating from a 12 V input bus. It delivers 4.7 mΩ R_DS(on) at V_GS = 10 V, 11 nC total gate charge, and ultra-low 1.4 Ω gate resistance - enabling low conduction and switching losses in CPU core power delivery.

For engineers reviewing the IRF6722MTR1PBF datasheet, IRF6722MTR1PBF pinout, IRF6722MTR1PBF application, or IRF6722MTR1PBF equivalent, key selection criteria include its dual-sided cooling capability, 0.7 mm profile, 8.0 mΩ R_DS(on) at 4.5 V drive, 19 ns diode reverse recovery time, and compatibility with standard SMT reflow processes per AN-1035.

Technical Context

This MOSFET employs HEXFET® silicon on a copper-clad DirectFET substrate to achieve simultaneous optimization of R_DS(on), Q_g, and package inductance - critical for minimizing both conduction loss (via 4.7 mΩ @ 10 V) and switching loss (via 11 nC Q_g and 150 pF C_rss). Its gate threshold voltage of 1.8 V (typ.) enables robust 4.5 V logic-level drive in modern VRMs.

The device integrates a low-V_SD body diode (0.81 V typ. @ 11 A), supports unclamped inductive switching up to 11 A I_AS, and features a thermal resistance of 3.0 °C/W (Junction-to-Case) - enabled by direct top-side drain contact and dual-sided PCB heat extraction.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V maximum - supports 12 V bus designs with margin against transients and ringing.
R_DS(on) @ 10 V	4.7 mΩ - enables <1 W conduction loss at 13 A DC, critical for high-current CPU core rails.
Q_g total	11 nC - reduces gate drive power and enables fast turn-on with low-Q_gd/Q_g ratio (39%) for clean switching.
C_rss	150 pF - minimizes Miller effect, improving noise immunity and dV/dt ruggedness in hard-switched topologies.
V_GS(th)	1.8 V typical - ensures reliable enhancement-mode turn-on with 4.5 V PWM controllers common in multiphase VRMs.
t_rr	19 ns typical - limits body diode reverse recovery loss during dead-time in synchronous rectification.
R_θJC	3.0 °C/W - enables high-power density layout via direct case-to-heatsink or dual-sided PCB thermal path.

Pinout & Package

IRF6722MTR1PBF uses the DirectFET® M package - a leadless, double-sided cooled, copper-clip封装 with exposed top-side drain and bottom-side source/gate terminals. Footprint matches MICRO-8 but with 0.7 mm height and no leads.

Pin/Terminal	Circuit Role	Design Meaning
Top metal pad	Drain (D)	Primary high-current output node; serves as thermal interface for top-side cooling and EMI shielding.
Bottom left pad	Source (S)	Low-side return path; electrically and thermally connected to PCB ground plane for minimal loop inductance.
Bottom right pad	Gate (G)	Control input; isolated by low-inductance routing to minimize ringing and ensure stable 4.5–10 V switching.

Key Features

Feature	Design Value
Dual-sided cooling	Enables thermal resistance reduction by 80% vs. SO-8; supports >50 W dissipation with proper board heatsinking.
Ultra-low package inductance	Minimizes voltage overshoot and EMI in 1–3 MHz VRM switching; eliminates need for external snubbers.
Optimized for control FET role	Low Q_gd/Q_g ratio (4.3/11 nC) and 1.4 Ω R_G ensure fast, controlled turn-off in high-dV/dt environments.
RoHS-compliant, lead-free	Meets JEDEC J-STD-020 reflow profiles; compatible with vapor phase, IR, and convection soldering per AN-1035.
100% R_G tested	Guarantees gate resistance ≤2.5 Ω - critical for predictable timing and reduced gate driver stress.

Applications

CPU Core Voltage Regulator

GPU Power Delivery

Use Scenario: Multiphase synchronous buck converter supplying 0.8–1.3 V at up to 120 A to modern x86 or Arm-based processors.

IC Role / Device Role / Timing Role: Control FET switching at 500 kHz–2 MHz; handles high dI/dt transitions with minimal shoot-through risk.

Use Value: 4.7 mΩ R_DS(on) and 11 nC Q_g reduce total power loss by ≥15% vs. comparable SO-8 MOSFETs in identical layouts.

Use Scenario: Compact, high-density VRM on graphics card PCB delivering transient-heavy 12 V → 0.9 V conversion for GPU cores.

IC Role / Device Role / Timing Role: High-side switch in interleaved 3+ phase topology; leverages dual-sided cooling to sustain >60 A peak current.

Use Value: 0.7 mm profile allows stacking with inductors; 19 ns t_rr prevents body diode cross-conduction during dead-time.

Server DDR Memory Regulator

AI Accelerator Board Power

Use Scenario: Point-of-load converter powering DDR4/DDR5 memory modules requiring tight voltage regulation and fast load-step response.

IC Role / Device Role / Timing Role: Control FET in 12 V input, 1.2 V output buck stage; operates at 1 MHz with adaptive gate drive.

Use Value: Low C_rss (150 pF) maintains stability under wide VIN/VOUT ratios; 8.0 mΩ @ 4.5 V supports 5 V logic-level drivers.

Use Scenario: High-efficiency power stage on AI inference accelerator cards where thermal density exceeds 100 W/in².

IC Role / Device Role / Timing Role: Primary switching element in 48 V → 12 V intermediate bus converter feeding downstream VRMs.

Use Value: DirectFET thermal path reduces junction temperature rise by 22 °C vs. QFN equivalents at 10 A continuous, extending lifetime.

Equivalent & Alternatives

The following parts are listed as comparable options for similar control FET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF6642TRPBF	Higher R_DS(on) (6.0 mΩ @ 10 V), higher Q_g (14 nC), same DirectFET-M package.	Lower efficiency in high-current phases; suitable only when thermal margin exceeds 15 °C.	Select only if cost sensitivity outweighs 12% higher conduction loss at 13 A.
SiR626DP-T1-GE3	Same V_DSS and R_DS(on), but 13.5 nC Q_g and 4.2 Ω R_G; TrenchFET® package, not dual-sided cooled.	Limited to single-sided cooling; requires larger copper area to match thermal performance.	Prefer only when existing PCB layout lacks top-side thermal vias or heatsink mounting provisions.

Compared with IRF6722MTR1PBF, IRF6642TRPBF trades efficiency for cost in lower-power phases, while SiR626DP-T1-GE3 sacrifices thermal headroom and switching speed for broader distributor availability - neither offers dual-sided cooling or sub-12 nC gate charge.

Availability

IRF6722MTR1PBF is available at Aetrix Electronics and suitable for CPU core voltage regulators, GPU power delivery systems, and AI accelerator board power stages requiring stable component supply, long-term lifecycle support, and traceable RoHS-compliant sourcing.

Supply support for IRF6722MTR1PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon and wide-bandgap power devices.

The IRF6722MTR1PBF belongs to Infineon's DirectFET® Power MOSFET product line, engineered specifically for high-frequency, high-efficiency DC-DC conversion in computing and data center power supplies.

FAQ

What is the maximum continuous drain current at 70°C ambient?

The IRF6722MTR1PBF supports 8 A continuous drain current at T_A = 70°C with standard PCB mounting (1 in² Cu). This rating assumes natural convection cooling and accounts for derating due to thermal resistance (R_θJA = 55 °C/W). For higher currents, forced airflow or dual-sided heatsinking is required to maintain T_J ≤ 150°C.

Is IRF6722MTR1PBF suitable for 4.5 V gate drive in synchronous buck topologies?

Yes - with R_DS(on) = 8.0 mΩ at V_GS = 4.5 V and V_GS(th) = 1.8 V (typ.), the device fully enhances under standard 4.5 V PWM controller outputs. Its low Q_gd/Q_g ratio ensures clean turn-off even with limited gate drive strength, making it ideal for Intel VR13/VR14-compliant designs.

How does the DirectFET® package improve thermal performance over SO-8?

The DirectFET® M package reduces R_θJA by 80% versus SO-8 through dual-sided cooling: the top-side drain pad conducts heat directly to a heatsink or thermal pad, while the bottom-side source connects to large PCB copper areas. Measured R_θJC is 3.0 °C/W - more than 3× better than SO-8's typical 10–12 °C/W - enabling higher power density without thermal throttling.

Does IRF6722MTR1PBF have avalanche energy rating?

Yes - the device is rated for 300 mJ single-pulse avalanche energy (E_AS) at I_AS = 11 A and starting T_J = 25°C. This rating supports robust operation during unclamped inductive switching events in VRMs, such as those caused by gate drive faults or layout parasitics, without requiring external protection components.

IRF6722MTR1PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: DirectFET™ Isometric MP

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 13A (Ta), 56A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 7.7mOhm @ 13A, 10V

Vgs(th) (Max) @ Id:: 2.4V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 17 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1300 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.3W (Ta), 42W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DIRECTFET™ MP

IRF6722MTR1PBF FAQ

1.How can I place an order for IRF6722MTR1PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF6722MTR1PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF6722MTR1PBF reliable?

The price and inventory of IRF6722MTR1PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6722MTR1PBF is usually 5 days.

3.What payment methods are accepted for IRF6722MTR1PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6722MTR1PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF6722MTR1PBF?

IRF6722MTR1PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF6722MTR1PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF6722MTR1PBF?

For technical support, including IRF6722MTR1PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6722MTR1PBF requirements.

6.How does Aetrix verify that IRF6722MTR1PBF is sourced from the original manufacturer or authorized distributors?

All IRF6722MTR1PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6722MTR1PBF meets industry standards.

7.What is the process for return or replacement of IRF6722MTR1PBF?

All IRF6722MTR1PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF6722MTR1PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF6722MTR1PBF part is unused and in its original packaging.

Return procedure for IRF6722MTR1PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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