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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF6722STR1PBF

Name: IRF6722STR1PBF
Brand: Infineon Technologies
SKU: IRF6722STR1PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF6722STR1PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric ST

Datasheet:: IRF6722STR1PBF.pdf

Description:: MOSFET N-CH 30V 13A DIRECTFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF6722STR1PBF from Infineon Technologies (formerly International Rectifier) is a 30 V, 13 A N-channel Power MOSFET in DirectFET® ST package, optimized as a control FET in high-frequency synchronous buck converters operating from 12 V input rails. It delivers 4.7 mΩ R_DS(on) @ 10 V, 11 nC total gate charge, and ultra-low 1.4 Ω gate resistance for minimized conduction and switching losses in CPU core power delivery.

For engineers reviewing the IRF6722STR1PBF datasheet, IRF6722STR1PBF pinout, IRF6722STR1PBF application, or IRF6722STR1PBF equivalent, key selection criteria include its dual-sided cooling capability, 0.7 mm profile, 80% improved thermal resistance versus prior packages, and body diode recovery performance (t_rr = 21–32 ns, Q_rr = 30–45 nC) critical for high-efficiency DC-DC designs.

Technical Context

This MOSFET employs HEXFET® silicon with DirectFET® ST packaging - a top-side-drain, bottom-side-source copper can structure enabling simultaneous PCB-side and heatsink-side thermal paths. Its low R_DS(on) temperature coefficient (22 mV/°C) and stable V_GS(th) (1.4–2.4 V) support robust gate drive across -40°C to +150°C junction range.

The device is characterized for unclamped inductive switching (EAS = 300 mJ @ I_AS = 11 A), features low Crss (150 pF) and Ciss (1320 pF) at V_DS = 15 V, and exhibits fast switching (t_r = 11 ns, t_f = 5.7 ns) with minimal gate oscillation due to ultra-low package inductance.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V maximum - supports 12 V bus systems with margin against transients and ringing.
R_DS(on)	4.7 mΩ @ V_GS = 10 V - enables <1 W conduction loss at 13 A, critical for high-current CPU core rails.
Q_g	11 nC typical - reduces gate driver power demand and enables >1 MHz switching without excessive drive loss.
t_r/t_f	11 ns / 5.7 ns - minimizes switching transition time, lowering overlap loss in synchronous rectification.
R_θJC	3.0 °C/W - allows direct case-to-heatsink thermal path for high-power density layouts.
Q_rr	30 nC typical - limits reverse recovery energy dissipation during high-dv/dt transitions in buck topology.
V_GS(th)	1.9 V typical - ensures reliable turn-on with standard 3.3 V or 5 V gate drivers in control-FET position.

Pinout & Package

IRF6722STR1PBF uses the DirectFET® ST (Small Size Can, T-Designation) package: top-side drain (D), bottom-side source (S), and side-mounted gate (G). The 4.8 × 3.8 × 0.7 mm footprint matches MICRO-8 layout geometry while enabling dual-sided cooling.

Pin/Terminal	Circuit Role	Design Meaning
Top metal surface	Drain (D)	Primary high-side current path; thermally coupled to heatsink or copper pour for junction-to-ambient heat extraction.
Bottom metal pad	Source (S)	Low-impedance return path to PCB ground plane; provides primary thermal interface to board copper.
Side tab (marked "G")	Gate (G)	Control terminal with 1.4 Ω internal gate resistance; requires short, low-inductance trace to driver IC.

Key Features

Feature	Design Value
Dual-sided cooling	Enables simultaneous thermal transfer to PCB and external heatsink, reducing R_θJA by 80% vs. SO-8 equivalents.
Ultra-low package inductance	Minimizes voltage overshoot and ringing during hard switching, improving EMI and reliability in >500 kHz converters.
Optimized for control-FET role	Low Q_g/R_DS(on) ratio (0.83 nC/mΩ) balances drive loss and conduction loss in high-side switching position.
Body diode with fast recovery	t_rr = 21 ns and low Q_rr reduce shoot-through risk and dead-time losses during synchronous rectification.
RoHS-compliant, lead-free	Meets JEDEC J-STD-020 reflow profiles; compatible with vapor-phase, IR, and convection soldering per AN-1035.

Applications

Server CPU Core VRM

GPU Power Delivery

Use Scenario: High-current, multi-phase buck converter supplying 0.8–1.2 V to modern x86 or ARM server CPUs under dynamic load.

IC Role / Device Role / Timing Role: Control FET switching at 500 kHz–1 MHz, handling up to 13 A per phase with tight duty-cycle control.

Use Value: 4.7 mΩ R_DS(on) and 11 nC Q_g enable >92% efficiency at 100 A system level while maintaining thermal headroom on dense PCBs.

Use Scenario: Compact, high-density VRM on AI accelerator or gaming GPU PCB where space and thermal budget are constrained.

IC Role / Device Role / Timing Role: High-side switch in 3–6 phase interleaved buck, operating with 3.3 V gate drive and fast transient response.

Use Value: 0.7 mm profile allows stacking with inductors; dual-sided cooling prevents localized hot spots near memory interfaces.

Telecom Baseband Power

Industrial FPGA Core Supply

Use Scenario: Point-of-load regulator powering baseband ASICs in 5G macrocell radios requiring high reliability and low noise.

IC Role / Device Role / Timing Role: Control FET in 12 V input → 1.0 V output buck stage, subject to wide ambient temperature (-40°C to +85°C).

Use Value: Stable V_GS(th) (±0.5 V over temp) and low R_DS(on) drift ensure consistent regulation across temperature without compensation.

Use Scenario: FPGA core rail supply in programmable logic controllers or motor drives where long-term field reliability is mandatory.

IC Role / Device Role / Timing Role: Primary switching element in industrial-grade 400 kHz buck converter with extended lifetime requirements.

Use Value: 300 mJ EAS rating and 150°C max T_J support operation under sustained overload or fault conditions without catastrophic failure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar control-FET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF6642TRPbF	Higher R_DS(on) (5.8 mΩ @ 10 V), higher Q_g (14 nC), same DirectFET ST package	Suitable for lower-frequency (<300 kHz) or lower-current (<10 A) control-FET roles where thermal margin is less constrained	Select when cost sensitivity outweighs efficiency gain; retains identical footprint and assembly process.
SiR626DP-T1-GE3	Lower R_DS(on) (3.8 mΩ @ 10 V), higher Q_g (15.5 nC), PowerPAK® SO-8 package (not dual-sided coolable)	Better conduction loss but limited thermal performance in high-power density layouts due to single-sided cooling	Prefer only if board-level heatsinking is unavailable and peak current remains ≤11 A.

Compared with IRF6722STR1PBF, IRF6642TRPbF trades efficiency for cost in thermally relaxed designs, while SiR626DP-T1-GE3 improves R_DS(on) but sacrifices thermal scalability - making IRF6722STR1PBF optimal for compact, high-frequency, high-reliability CPU/GPU VRMs.

Availability

IRF6722STR1PBF is available at Aetrix Electronics and suitable for server CPU core VRMs, GPU power delivery modules, telecom baseband supplies, and industrial FPGA core rails requiring stable component supply, long-lifecycle support, and RoHS-compliant manufacturing.

Supply support for IRF6722STR1PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon and packaging innovation for energy-efficient systems.

The DirectFET® product line was developed to overcome thermal and inductance limitations of traditional surface-mount MOSFETs, targeting high-frequency, high-current DC-DC conversion in computing and communications infrastructure.

FAQ

What is the recommended gate resistor value for IRF6722STR1PBF in a 1 MHz synchronous buck converter?

A 2.2 Ω to 4.7 Ω gate resistor is recommended to balance switching speed and gate oscillation damping. With its 1.4 Ω intrinsic gate resistance and ultra-low package inductance, values below 2.2 Ω risk ringing; above 4.7 Ω increases t_r/t_f beyond 15 ns, raising switching loss. Layout must minimize loop inductance using short, wide traces between driver output and G pin.

Can IRF6722STR1PBF be used as a synchronous rectifier (sync-FET) instead of a control-FET?

No - its body diode forward voltage (V_SD = 0.8–1.0 V) and reverse recovery characteristics (Q_rr = 30–45 nC) are optimized for controlled turn-on as a high-side switch, not freewheeling. As a sync-FET, it would incur higher conduction loss than dedicated low-V_F devices and risk cross-conduction due to slower diode recovery versus purpose-built sync-FETs.

Does IRF6722STR1PBF require special PCB layout considerations beyond standard DirectFET guidelines?

Yes - the top-side drain must be connected to a large, thermally isolated copper pour for heatsink attachment, while the bottom-source pad requires ≥2 oz copper with multiple thermal vias to inner ground planes. Per AN-1035, stencil aperture for the source pad should be 100% open; gate pad stencil must be precisely aligned to avoid solder bridging to adjacent pads due to the 0.35 mm minimum spacing.

Is IRF6722STR1PBF suitable for automotive applications per AEC-Q101?

No - IRF6722STR1PBF is not AEC-Q101 qualified. While its absolute maximum ratings (T_J = -40°C to +150°C, EAS = 300 mJ) meet some automotive stress conditions, it lacks the required qualification testing (HTOL, UHAST, temperature cycling, etc.) and traceability documentation mandated for automotive use. For automotive DC-DC, consider Infineon's OptiMOS™ 6 series AEC-Q101 variants.

IRF6722STR1PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: DirectFET™ Isometric ST

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 13A (Ta), 58A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 7.3mOhm @ 13A, 10V

Vgs(th) (Max) @ Id:: 2.4V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 17 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1320 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.2W (Ta), 42W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DIRECTFET™ ST

IRF6722STR1PBF FAQ

1.How can I place an order for IRF6722STR1PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF6722STR1PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF6722STR1PBF reliable?

The price and inventory of IRF6722STR1PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6722STR1PBF is usually 5 days.

3.What payment methods are accepted for IRF6722STR1PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6722STR1PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF6722STR1PBF?

IRF6722STR1PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF6722STR1PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF6722STR1PBF?

For technical support, including IRF6722STR1PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6722STR1PBF requirements.

6.How does Aetrix verify that IRF6722STR1PBF is sourced from the original manufacturer or authorized distributors?

All IRF6722STR1PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6722STR1PBF meets industry standards.

7.What is the process for return or replacement of IRF6722STR1PBF?

All IRF6722STR1PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF6722STR1PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF6722STR1PBF part is unused and in its original packaging.

Return procedure for IRF6722STR1PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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