Infineon Technologies IRF6722STRPBF

Overview

IRF6722STRPBF from Infineon Technologies (formerly International Rectifier) is a 30V N-channel Power MOSFET in DirectFET® ST package, optimized as a control FET in high-frequency synchronous buck converters operating from 12V bus. It delivers 4.7 mΩ R_DS(on) @ 10V, 11 nC total gate charge, and ultra-low 1.4 Ω gate resistance - enabling low conduction and switching losses for CPU core DC-DC applications.

For engineers reviewing the IRF6722STRPBF datasheet, IRF6722STRPBF pinout, IRF6722STRPBF application, or IRF6722STRPBF equivalent, key selection criteria include its 0.7 mm profile for dual-sided cooling, 8.0 mΩ R_DS(on) @ 4.5V for 3.3V/5V gate drive compatibility, and 30V V_DSS rating suitable for point-of-load regulation in server and telecom power supplies.

Technical Context

This MOSFET employs HEXFET® silicon with DirectFET® ST packaging - a copper-can, top-side-drain structure enabling thermal path symmetry and <80% lower junction-to-ambient thermal resistance versus conventional SO-8. Its gate threshold voltage (1.9 V typ.) and steep transconductance (23 S) support fast, stable turn-on under low-voltage gate drive.

The device integrates an optimized body diode with 0.80–1.0 V forward voltage and 21–32 ns reverse recovery time, critical for minimizing shoot-through loss in synchronous rectification. Its 150 pF Crss and 1320 pF Ciss values are tuned to balance EMI suppression and switching speed in >500 kHz converter topologies.

Key Specifications

Pinout & Package

IRF6722STRPBF uses the DirectFET® ST (Small Size Can, T-Designation) package - a lead-free, low-profile (0.7 mm), copper-can surface-mount package with top-side drain and bottom-side source/gate terminals. It features dual-sided thermal access and footprint compatibility with MICRO-8 layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar control-FET applications.

Compared with IRF6721STRPBF and SiR626DP, the IRF6722STRPBF offers the lowest combined R_DS(on)/Q_g figure-of-merit (0.43 mΩ·nC) and unique dual-sided thermal path - making it optimal for space-constrained, high-efficiency 12V-input buck converters where thermal management is critical.

Availability

IRF6722STRPBF is available at Aetrix Electronics and suitable for server CPU VRMs, telecom POL converters, and industrial motor drive gate drivers requiring stable component supply, RoHS-compliant packaging, and long-term production continuity.

Supply support for IRF6722STRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control solutions.

This part belongs to Infineon's DirectFET® Power MOSFET product line, engineered specifically for high-frequency, high-efficiency DC-DC conversion in computing and communications infrastructure where thermal density and switching loss are primary design constraints.

FAQ

What is the maximum continuous drain current for IRF6722STRPBF at 70°C ambient?

The IRF6722STRPBF supports 8.2 A continuous drain current at T_A = 70°C with proper PCB copper area and still-air conditions. This rating assumes use of a 1-inch square copper board per JEDEC standards and accounts for thermal derating above 25°C ambient.

Does IRF6722STRPBF require special soldering processes?

No - the DirectFET® ST package is compatible with standard surface-mount reflow profiles including vapor phase, infrared, and convection soldering. Application note AN-1035 provides validated stencil and substrate design guidelines to ensure void-free solder joints and mechanical reliability.

Can IRF6722STRPBF be used as a synchronous rectifier (sync FET)?

It is not recommended as a sync FET due to its relatively high Q_rr (30 nC) and body diode V_SD (0.8–1.0 V). The device is optimized for control-FET operation where fast turn-on and low Q_g dominate; dedicated low-Q_rr sync FETs like IRF6712STRPBF are better suited for low-side positions.

What is the safe operating area (SOA) limitation at 100 µs pulse width?

At 100 µs pulse width and T_J = 150°C, the IRF6722STRPBF supports up to 40 A at 10 V V_DS and 25 A at 20 V V_DS, as defined by its R_DS(on)-limited boundary in the SOA curve (Fig 11). Pulse testing must limit peak junction temperature to ≤150°C using appropriate gate drive and layout.