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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF6725MTR1PBF

Name: IRF6725MTR1PBF
Brand: Infineon Technologies
SKU: IRF6725MTR1PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF6725MTR1PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric MX

Datasheet:: IRF6725MTR1PBF.pdf

Description:: MOSFET N-CH 30V 28A DIRECTFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF6725MTR1PBF from Infineon Technologies is a 30 V, 28 A N-channel Power MOSFET in DirectFET® package, optimized for synchronous buck converters operating from 12 V bus. It delivers 1.7 mΩ R_DS(on) @ 10 V, 36 nC total gate charge, and ultra-low 1.3 Ω gate resistance-enabling high-efficiency DC-DC conversion for CPU core power delivery in servers and high-frequency computing platforms.

For engineers reviewing the IRF6725MTR1PBF datasheet, IRF6725MTR1PBF pinout, IRF6725MTR1PBF application, or IRF6725MTR1PBF equivalent, key selection criteria include low R_DS(on) at 4.5 V (2.4 mΩ), dual-sided cooling capability, <0.7 mm profile, and avalanche-rated ruggedness (220 mJ E_AS) for reliable operation in hard-switched topologies.

Technical Context

This MOSFET employs HEXFET® silicon with DirectFET® packaging to minimize conduction and switching losses simultaneously. Its gate charge profile (Q_gs2 = 3.9 nC, Q_gd = 11 nC) supports fast, controlled turn-on/turn-off in high-frequency (>1 MHz) synchronous rectification.

The device features an integrated body diode with 39 nC reverse recovery charge and 24 ns t_rr, enabling efficient freewheeling in buck stages. Thermal design leverages dual-sided cooling-junction-to-PCB R_θJ-PCB = 1.0 °C/W-and achieves 80% lower thermal resistance than prior-generation packages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V maximum drain-source breakdown voltage-supports 12 V input bus with margin for transient overshoot.
R_DS(on) @ 10 V	1.7 mΩ typical-reduces conduction loss to <1 W at 28 A continuous current in compact layouts.
R_DS(on) @ 4.5 V	2.4 mΩ typical-ensures robust performance with logic-level gate drive in low-voltage control FET roles.
Q_g total	36 nC typical-enables efficient switching at >1 MHz with moderate gate driver strength (e.g., 2 A peak).
E_AS	220 mJ single-pulse avalanche energy-provides ruggedness against inductive switching stress without external snubbers.
R_θJ-PCB	1.0 °C/W typical-achieves high power density via direct copper pad contact on both top (drain) and bottom surfaces.
Package height	0.7 mm maximum-fits under low-profile heatsinks and enables stacked PCB architectures.

Pinout & Package

IRF6725MTR1PBF uses the DirectFET® M package-a surface-mount, leadless, double-sided cooling metal-can package with no traditional leads. Drain connects to top and bottom metal surfaces; source and gate are soldered to PCB pads on the bottom side.

Pin/Terminal	Circuit Role	Design Meaning
Top Metal Surface	Drain (D)	Primary high-current path; thermally coupled to heatsink or copper plane on both sides of PCB.
Bottom Pad 1	Source (S)	Low-side return node; connects to ground plane and gate driver reference; carries full load current.
Bottom Pad 2	Gate (G)	Control terminal; isolated by 1.3 Ω internal gate resistance to damp ringing and reduce EMI.
Bottom Pad 3	Source (S)	Redundant source connection for current sharing and reduced parasitic inductance in high-di/dt paths.

Key Features

Feature	Design Value
Dual-sided cooling interface	Enables simultaneous thermal transfer from top (drain) and bottom (source/gate pads), reducing R_θJA by 80% vs. SO-8.
Ultra-low package inductance	<0.5 nH source inductance-minimizes voltage spikes and improves switching waveform fidelity in >1 MHz converters.
Optimized for sync-FET role	Low Q_gd/Q_g ratio (11/36 ≈ 0.31) ensures clean zero-voltage switching transition in synchronous buck topologies.
Rugged body diode	24 ns t_rr and 39 nC Q_rr-reduces reverse recovery loss and EMI during freewheeling in high-di/dt applications.
RoHS-compliant & halogen-free	Meets IPC-J-STD-609A Class 1 definition-suitable for industrial and telecom equipment requiring strict material compliance.

Applications

Server CPU Core VRM

GPU Power Delivery

Use Scenario: High-current, high-frequency point-of-load converter supplying 0.8–1.2 V to multi-core Xeon or EPYC processors.

IC Role / Device Role / Timing Role: Synchronous rectifier (low-side FET) in 500 kHz–1.5 MHz multiphase buck regulator.

Use Value: 1.7 mΩ R_DS(on) and 36 nC Q_g enable >95% efficiency at 300 A per phase while maintaining thermal headroom on dense PCBs.

Use Scenario: Compact, high-density VRM for discrete graphics cards with dynamic load steps up to 200 A/µs.

IC Role / Device Role / Timing Role: Low-side switch in interleaved 3-phase buck with ceramic output capacitors.

Use Value: Dual-sided cooling and 0.7 mm profile allow integration beneath GPU die without airflow obstruction or height conflict.

Telecom Baseband Power

Industrial FPGA Core Supply

Use Scenario: 12 V input to 0.9 V output converter powering 5G baseband ASICs with burst-mode operation.

IC Role / Device Role / Timing Role: Sync-FET in adaptive frequency buck with light-load PWM/PFM mode switching.

Use Value: 2.4 mΩ R_DS(on) @ 4.5 V ensures stable regulation down to 10 mA load, minimizing dropout in PFM mode.

Use Scenario: Field-programmable gate array core supply requiring high reliability and long-term thermal stability.

IC Role / Device Role / Timing Role: Primary low-side MOSFET in 600 kHz fixed-frequency buck with 150 °C max junction rating.

Use Value: 220 mJ E_AS and 150 °C T_J rating support uninterrupted operation in sealed industrial enclosures with limited airflow.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF6642TRPbF	Higher R_DS(on) (2.2 mΩ @ 10 V), lower Q_g (26 nC), same DirectFET-M package	Better suited for control-FET roles where gate drive loss dominates over conduction loss	Select when prioritizing switching speed over conduction efficiency in asymmetric half-bridge configurations
SiR626DP-T1-GE3	Same V_DSS (30 V), higher R_DS(on) (2.8 mΩ @ 10 V), higher Q_g (42 nC), PowerPAK® SO-8 package	Limited to single-sided cooling; requires larger PCB footprint and higher thermal resistance design margin	Choose only if legacy SO-8 layout compatibility is mandatory and thermal budget allows ≥2.5 °C/W R_θJA

Compared with IRF6725MTR1PBF, IRF6642TRPbF trades conduction loss for faster switching, while SiR626DP-T1-GE3 sacrifices thermal performance and profile height for SO-8 assembly familiarity-neither matches the dual-sided cooling advantage or sub-2 mΩ R_DS(on) at 10 V.

Availability

IRF6725MTR1PBF is available at Aetrix Electronics and suitable for server CPU VRMs, GPU power modules, and telecom baseband supplies requiring stable component supply, high-reliability qualification, and long-lifecycle availability.

Supply support for IRF6725MTR1PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs-with global manufacturing, quality certification to IATF 16949 and ISO 9001, and broad portfolio coverage across silicon, SiC, and GaN technologies.

This part belongs to Infineon's DirectFET® Power MOSFET product line, engineered specifically for high-frequency, high-efficiency DC-DC conversion in datacenter, networking, and computing infrastructure where thermal density and switching loss are critical constraints.

FAQ

What is the maximum continuous drain current at 70°C ambient temperature?

The IRF6725MTR1PBF supports 19 A continuous drain current at T_A = 70°C with standard PCB mounting (1 in² Cu board, still air). This rating assumes proper thermal vias and copper area per Infineon Application Note AN-1035, and derates linearly above 70°C at 22 mW/°C.

Does this MOSFET require a negative gate voltage for reliable turn-off?

No. The device has a gate threshold voltage (V_GS(th)) of 1.35–2.35 V and is fully enhanced at 0 V gate-source bias. A negative gate voltage is not required for turn-off; however, applying –5 V can improve noise immunity in high-dv/dt environments without damaging the ±20 V V_GS rating.

Can IRF6725MTR1PBF be used in avalanche mode during normal operation?

Yes-it is rated for 220 mJ single-pulse avalanche energy (E_AS) and designed for unclamped inductive switching. While not intended for repetitive avalanche, it withstands occasional inductive turn-off events (e.g., controller fault or phase-leg shoot-through) without failure when operated within absolute maximum ratings.

Is the DirectFET® M package compatible with standard reflow profiles?

Yes. The package complies with IPC/JEDEC J-STD-020D moisture sensitivity level 1 and supports standard lead-free reflow profiles (peak 260°C, 30 sec max). Mounting must follow AN-1035 guidelines-including stencil design, solder paste volume, and preheat ramp rates-to ensure void-free thermal interface and mechanical reliability.

IRF6725MTR1PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: DirectFET™ Isometric MX

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 28A (Ta), 170A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.2mOhm @ 28A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 54 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4700 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.8W (Ta), 100W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DIRECTFET™ MX

IRF6725MTR1PBF FAQ

1.How can I place an order for IRF6725MTR1PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF6725MTR1PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF6725MTR1PBF reliable?

The price and inventory of IRF6725MTR1PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6725MTR1PBF is usually 5 days.

3.What payment methods are accepted for IRF6725MTR1PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6725MTR1PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF6725MTR1PBF?

IRF6725MTR1PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF6725MTR1PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF6725MTR1PBF?

For technical support, including IRF6725MTR1PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6725MTR1PBF requirements.

6.How does Aetrix verify that IRF6725MTR1PBF is sourced from the original manufacturer or authorized distributors?

All IRF6725MTR1PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6725MTR1PBF meets industry standards.

7.What is the process for return or replacement of IRF6725MTR1PBF?

All IRF6725MTR1PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF6725MTR1PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF6725MTR1PBF part is unused and in its original packaging.

Return procedure for IRF6725MTR1PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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