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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF6725MTRPBF

Name: IRF6725MTRPBF
Brand: Infineon Technologies
SKU: IRF6725MTRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF6725MTRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric MX

Datasheet:: IRF6725MTRPBF.pdf

Description:: MOSFET N-CH 30V 28A DIRECTFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF6725MTRPBF from Infineon Technologies (formerly International Rectifier) is a 30 V, 28 A N-channel Power MOSFET in DirectFET® MX package, optimized for synchronous buck converters operating from 12 V input rails. It delivers 1.7 mΩ R_DS(on) @ 10 V and 2.4 mΩ @ 4.5 V, with ultra-low 36 nC total gate charge and 1.3 Ω gate resistance - enabling high-efficiency, high-frequency DC-DC conversion for CPU core power delivery.

For engineers reviewing the IRF6725MTRPBF datasheet, IRF6725MTRPBF pinout, IRF6725MTRPBF application, or IRF6725MTRPBF equivalent, key selection criteria include low R_DS(on) at 4.5 V gate drive, dual-sided cooling capability, <0.7 mm profile for space-constrained PCBs, and validated performance in 1–3 MHz synchronous buck topologies powering modern processors.

Technical Context

This MOSFET employs HEXFET® silicon with trench-gate structure and is packaged in the DirectFET® MX outline - a copper-clip, top-side-drain, bottom-side-source configuration enabling simultaneous top and bottom thermal interface. Its gate threshold voltage of 1.8 V (typ.) and negative temperature coefficient (−6.1 mV/°C) support stable operation across −40°C to +150°C junction range.

The device is characterized for unclamped inductive switching with 22 A avalanche current and 700 mJ single-pulse avalanche energy. Its 420 pF Crss and 960 pF Coss values, combined with 11 nC Q_gd, minimize Miller-induced turn-off delay and enable robust high-dV/dt immunity in hard-switched converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V maximum drain-source breakdown - supports 12 V bus systems with ≥2× voltage margin against transients.
R_DS(on) @ 10 V	1.7 mΩ typical - reduces conduction loss to ≤1.2 W at 28 A continuous, critical for high-current CPU VRMs.
R_DS(on) @ 4.5 V	2.4 mΩ typical - ensures strong enhancement-mode turn-on with 5 V logic-level gate drivers.
Q_g total	36 nC typical - enables fast switching with low driver power consumption in 1–3 MHz applications.
Q_gd	11 nC typical - limits Miller plateau duration and improves controllability during hard switching.
R_θJC	1.2 °C/W typical - allows >100 W power dissipation with modest heatsinking when using both sides of package.
V_GS(th)	1.8 V typical - ensures reliable turn-on with standard 3.3 V or 5 V control signals without overdrive.

Pinout & Package

IRF6725MTRPBF uses the DirectFET® MX surface-mount package (6.35 × 5.05 × 0.7 mm), featuring top-side Drain (D), bottom-side Source (S), and side-mounted Gate (G) terminals. The package enables dual-sided cooling and eliminates bond wires, reducing parasitic inductance.

Pin/Terminal	Circuit Role	Design Meaning
Top metal pad	Drain (D)	Primary high-side current path; thermally coupled to heatsink or PCB copper pour on component side.
Bottom metal pad	Source (S)	Low-side return path; provides thermal interface to PCB ground plane or heatsink on solder side.
Side terminal (marked "G")	Gate (G)	Signal input for channel control; low-inductance connection minimizes ringing during fast switching.

Key Features

Feature	Design Value
Dual-sided cooling capability	Enables thermal management via both PCB and external heatsink - reduces R_θJA by up to 80% vs. conventional SO-8.
Ultra-low package inductance	Eliminates bond wires and uses copper clips - lowers switching losses and EMI in high-dI/dt applications.
Optimized for sync-FET role	Low Q_gd/Q_g ratio (0.31) and low R_DS(on) at 4.5 V ensure efficient body-diode commutation and low reverse recovery loss.
RoHS-compliant & halogen-free	Meets IPC-J-STD-609A Class 1 requirements - suitable for automotive and industrial end equipment with strict material compliance.
100% R_G tested	Guarantees gate resistance ≤2.2 Ω - ensures consistent turn-on timing and driver stage loading across production lots.

Applications

CPU Core Voltage Regulator (VRM)

Server Point-of-Load (POL) Converter

Use Scenario: High-current, multi-phase buck converter supplying 0.8–1.3 V to x86 or ARM-based processors at up to 200 A per rail.

IC Role / Device Role / Timing Role: Synchronous rectifier (sync-FET) in low-side position, switching at 1–3 MHz with 5 V gate drive.

Use Value: 2.4 mΩ R_DS(on) @ 4.5 V and 36 nC Q_g reduce conduction + switching losses by >15% vs. legacy SO-8 MOSFETs, improving system efficiency above 90%.

Use Scenario: Compact 12 V-to-3.3 V or 5 V POL module for FPGA, ASIC, or memory subsystems in datacenter rack servers.

IC Role / Device Role / Timing Role: Low-side switch in interleaved buck topology with forced-air cooling and tight board area constraints.

Use Value: 0.7 mm profile and 6.35 × 5.05 mm footprint allow placement under heat sinks or near BGA packages - saving >30% board area vs. TO-252.

Telecom DC-DC Brick

Industrial Motor Control H-Bridge

Use Scenario: 48 V input, 12 V output isolated DC-DC brick for 5G base station power distribution.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in forward or active-clamp forward topology.

Use Value: 700 mJ avalanche energy rating and 22 A I_AS withstand capability ensure robustness against transformer leakage spikes and load dump events.

Use Scenario: Half-bridge leg in 24–48 V BLDC motor drives for factory automation and robotics.

IC Role / Device Role / Timing Role: Low-side switch handling PWM frequencies up to 20 kHz with body-diode freewheeling.

Use Value: 0.77 V V_SD (typ.) and 24 ns t_rr minimize diode conduction loss and reverse recovery stress during commutation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon IRF6722MTRPBF	Same DirectFET MX package, but 3.2 mΩ R_DS(on) @ 4.5 V and 26 nC Q_g - lower gate charge but higher on-resistance.	Better suited for higher-frequency, lower-current applications where switching loss dominates conduction loss.	Select when optimizing for <1 MHz operation with <15 A load and minimal driver power.
Vishay SiR626DP	PowerPAK® SO-8 package, 2.1 mΩ @ 4.5 V, 41 nC Q_g, R_θJA = 45 °C/W - higher thermal resistance and no dual-sided cooling.	Limited to single-sided cooling; requires larger PCB copper area or external heatsink for equivalent power handling.	Choose only if legacy SO-8 layout compatibility is mandatory and thermal budget permits higher junction temperature rise.

Compared with IRF6725MTRPBF, IRF6722MTRPBF trades higher R_DS(on) for lower Q_g, favoring ultra-high-frequency light-load efficiency, while SiR626DP sacrifices thermal performance for footprint familiarity - making IRF6725MTRPBF optimal for high-current, thermally constrained, high-efficiency VRMs.

Availability

IRF6725MTRPBF is available at Aetrix Electronics and suitable for CPU core VRMs, server POL converters, telecom DC-DC bricks, and industrial motor control H-bridges requiring stable component supply, long-lifecycle support, and traceable sourcing.

Supply support for IRF6725MTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive microcontrollers, and RF solutions - with over 30 years of MOSFET innovation.

This part belongs to Infineon's DirectFET® product line, engineered specifically for high-density, high-efficiency power conversion in computing and communications infrastructure - emphasizing low-profile packaging, dual thermal paths, and optimized gate charge for MHz-range switching.

FAQ

What is the maximum continuous drain current at 70°C ambient temperature?

The IRF6725MTRPBF supports 19 A continuous drain current at T_A = 70°C with proper PCB copper area (1 in² Cu, double-sided cooling). This rating assumes 1.2 °C/W R_θJC and 12.5 °C/W R_θJA under optimized thermal conditions - exceeding SO-8 alternatives by >40% at same ambient.

Does this MOSFET require a gate resistor for stability in high-frequency operation?

Yes - a 1.8 Ω gate resistor is specified in the datasheet test circuit (Fig. 17a) to dampen ringing caused by low package inductance and PCB trace inductance. Using 1–2.2 Ω ensures clean turn-on/turn-off waveforms at 1–3 MHz without oscillation or shoot-through risk.

Can IRF6725MTRPBF be used as a control FET in a buck converter?

It can operate as a high-side control FET in low-duty-cycle applications, but its 1.8 V V_GS(th) and 2.4 mΩ R_DS(on) @ 4.5 V make it better suited as a sync-FET. For control FET roles, Infineon recommends IRF6714MTRPBF (higher V_GS(th), lower Q_g) to avoid unintended turn-on during dead-time.

Is the DirectFET MX package compatible with standard reflow profiles?

Yes - the package is qualified for lead-free reflow per J-STD-020, with peak temperature up to 260°C. AN-1035 specifies preheat ramp rates (≤2°C/s), soak time (60–120 s at 150–200°C), and cooling rate (≤6°C/s) to prevent solder voiding and interfacial delamination.

IRF6725MTRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: DirectFET™ Isometric MX

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 28A (Ta), 170A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2.2mOhm @ 28A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 54 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4700 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.8W (Ta), 100W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DIRECTFET™ MX

IRF6725MTRPBF FAQ

1.How can I place an order for IRF6725MTRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF6725MTRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF6725MTRPBF reliable?

The price and inventory of IRF6725MTRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6725MTRPBF is usually 5 days.

3.What payment methods are accepted for IRF6725MTRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6725MTRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF6725MTRPBF?

IRF6725MTRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF6725MTRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF6725MTRPBF?

For technical support, including IRF6725MTRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6725MTRPBF requirements.

6.How does Aetrix verify that IRF6725MTRPBF is sourced from the original manufacturer or authorized distributors?

All IRF6725MTRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6725MTRPBF meets industry standards.

7.What is the process for return or replacement of IRF6725MTRPBF?

All IRF6725MTRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF6725MTRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF6725MTRPBF part is unused and in its original packaging.

Return procedure for IRF6725MTRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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