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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF6726MTR1PBF

Name: IRF6726MTR1PBF
Brand: Infineon Technologies
SKU: IRF6726MTR1PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF6726MTR1PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric MT

Datasheet:: IRF6726MTR1PBF.pdf

Description:: MOSFET N-CH 30V 32A DIRECTFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF6726MTR1PBF from Infineon Technologies is a 30 V, 32 A N-channel DirectFET™ Power MOSFET in a low-profile (0.7 mm) copper-can package optimized for synchronous buck converters in CPU core DC-DC applications. It delivers 1.3 mΩ R_DS(on) @ 10 V, 51 nC total gate charge, and ultra-low package inductance to minimize conduction and switching losses at high frequencies.

For engineers reviewing the IRF6726MTR1PBF datasheet, IRF6726MTR1PBF pinout, IRF6726MTR1PBF application, or IRF6726MTR1PBF equivalent, key selection criteria include R_DS(on) stability over temperature, gate charge trade-offs between control FET and sync FET roles, dual-sided cooling compatibility, and avalanche energy rating (1200 mJ @ I_AS = 25 A).

Technical Context

This MOSFET employs HEXFET® silicon with DirectFET™ packaging to achieve sub-2 mΩ on-resistance while maintaining low Q_g (51 nC typ.) and Q_gd (16 nC typ.), enabling efficient operation in 12 V input, high-frequency (>500 kHz) synchronous buck topologies. Its 1.7 V gate threshold voltage and negative temperature coefficient for V_GS(th) support stable parallel operation.

The device integrates a robust body diode with 45 nC reverse recovery charge and 27 ns t_rr, rated for unclamped inductive switching up to 1200 mJ at T_J = 150 °C. Thermal resistance from junction to PCB is 1.0 °C/W when mounted with double-sided cooling and metalized board backing.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Supports 12 V bus systems with margin for voltage transients and ringing.
R_DS(on) @ 10 V	1.3 mΩ - Enables <1 W conduction loss at 32 A, critical for high-current CPU core rails.
Q_g total	51 nC - Balances drive strength and switching speed for <500 ns turn-off delay in high-frequency PWM.
Q_gd	16 nC - Limits Miller-induced shoot-through risk during hard switching in synchronous rectification.
R_θJ-PCB	1.0 °C/W - Achievable only with double-sided cooling and metalized PCB, enabling >90 W power handling.
E_AS	1200 mJ - Withstands single-pulse avalanche stress during load dump or inductor saturation events.
V_GS(th)	1.7 V (typ.) - Ensures reliable turn-on with standard 3.3 V or 5 V gate drivers without level-shifting.

Pinout & Package

IRF6726MTR1PBF uses the DirectFET™ M package: a copper-can, lead-free, surface-mount outline with drain-connected top and bottom metal pads, and isolated gate/source terminals on the side. Footprint matches MICRO-8 but with 0.7 mm height and dual thermal paths.

Pin/Terminal	Circuit Role	Design Meaning
Top Metal Pad	Drain	Primary high-current path and top-side heat sink interface; electrically connected to bottom drain pad.
Bottom Metal Pad	Drain	Primary PCB-level current return and bottom-side thermal interface; requires full copper pour.
Side Terminal 1	Gate	Low-inductance gate connection; routed away from power loops to suppress oscillation.
Side Terminal 2	Source	Reference node for gate drive; must be tightly coupled to power ground plane to minimize common-source inductance.

Key Features

Feature	Design Value
Dual-sided cooling capability	Enables thermal resistance as low as 1.0 °C/W via simultaneous top and bottom heatsinking - 80% improvement over prior packages.
Ultra-low package inductance	Reduces voltage overshoot and ringing during fast dV/dt switching, critical for >1 MHz DC-DC operation.
Optimized for sync-FET and control-FET roles	Combines low R_DS(on) and moderate Q_g to serve both high-current low-side and medium-duty high-side positions in buck converters.
100% R_g tested	Ensures consistent gate resistance (1.0–1.8 Ω), improving predictability of switching timing and EMI behavior across production lots.

Applications

CPU Core Voltage Regulator

GPU Power Delivery

Use Scenario: High-current, multi-phase buck converter supplying dynamic loads up to 300 A to modern x86 or ARM processors.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier (sync-FET) operating at 300–1000 kHz with 30–50 ns dead-time control.

Use Value: 1.3 mΩ R_DS(on) and 1.0 °C/W R_θJ-PCB reduce power loss by >25% versus comparable SO-8 MOSFETs under 100 A per phase.

Use Scenario: Compact, high-density VRM for discrete or integrated GPUs requiring rapid transient response and tight voltage regulation.

IC Role / Device Role / Timing Role: High-current control-FET in interleaved 2-phase topology with adaptive gate drive voltage scaling.

Use Value: 51 nC Q_g and 16 nC Q_gd allow clean 200 ns turn-on/turn-off transitions, minimizing overlap loss at 600 kHz switching.

Server Memory Regulator

AI Accelerator Power Stage

Use Scenario: Point-of-load regulator for DDR5 memory modules with strict ripple (<15 mV) and efficiency (>92%) requirements.

IC Role / Device Role / Timing Role: Sync-FET in 12 V input, 1.1 V output buck stage operating at 800 kHz with ceramic output capacitors.

Use Value: Ultra-low C_oss (1270 pF) and Crss (590 pF) suppress output voltage droop during load steps and reduce EMI filter size.

Use Scenario: Power delivery network for edge AI inference accelerators with burst-mode workloads and thermal cycling demands.

IC Role / Device Role / Timing Role: Primary switch in high-efficiency, thermally constrained 48 V-to-12 V intermediate bus converter.

Use Value: 1200 mJ E_AS rating ensures reliability during frequent inrush and short-circuit fault events without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF6642TRPBF	R_DS(on) = 1.6 mΩ @ 10 V; Q_g = 42 nC; same DirectFET-M package	Slightly higher conduction loss but faster switching due to lower Q_g; less suited for highest-current sync-FET roles	Prefer when gate drive strength is limited or switching frequency exceeds 1 MHz.
SiR626DP-T1-GE3	R_DS(on) = 1.4 mΩ @ 10 V; Q_g = 58 nC; PowerPAK® 1212-8 package (1.0 mm height)	Higher profile limits double-sided cooling; higher Q_g increases drive loss at high frequency	Choose only if PCB layout prohibits DirectFET footprint or requires legacy SMT tooling compatibility.

Compared with IRF6726MTR1PBF, IRF6642TRPBF trades 0.3 mΩ higher R_DS(on) for 9 nC lower Q_g, favoring high-frequency control-FET use, while SiR626DP-T1-GE3 sacrifices thermal performance for broader assembly compatibility - making IRF6726MTR1PBF optimal where dual-sided cooling and minimal conduction loss are prioritized.

Availability

IRF6726MTR1PBF is available at Aetrix Electronics and suitable for CPU core voltage regulators, GPU power delivery systems, and AI accelerator power stages requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial and enterprise-grade designs.

Supply support for IRF6726MTR1PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon and wide-bandgap power devices.

The DirectFET™ product line was developed to replace traditional leaded and SO-8 packages in high-efficiency, high-power-density DC-DC conversion, targeting server, computing, and telecom infrastructure applications demanding ultra-low R_DS(on) and advanced thermal management.

FAQ

What is the maximum continuous drain current at 70°C ambient temperature?

The IRF6726MTR1PBF supports 26 A continuous drain current at T_A = 70°C with proper PCB copper area and airflow. This rating assumes mounting on a 1 in² copper board with double-sided cooling and no additional heatsink. Derating follows a linear 0.022 W/°C slope above 70°C ambient.

Does this MOSFET require a gate resistor for stability in high-frequency buck converters?

Yes - a 1–5 Ω gate resistor is recommended to dampen parasitic oscillation caused by trace inductance interacting with the device's low gate resistance (1.0–1.8 Ω) and ultra-low package inductance. Layout best practices include minimizing gate loop area and placing the resistor adjacent to the gate terminal.

Can IRF6726MTR1PBF be used in parallel configurations?

Yes - its negative temperature coefficient for R_DS(on) and matched V_GS(th) distribution (1.35–2.35 V) enable stable current sharing. Successful parallel operation requires symmetrical PCB layout, identical gate drive paths, and shared source Kelvin connections to avoid imbalance from common-source inductance.

Is the DirectFET™ M package compatible with standard reflow profiles?

Yes - the IRF6726MTR1PBF complies with IPC/JEDEC J-STD-020D moisture sensitivity level 1 and supports standard lead-free reflow profiles (peak 260°C). Application note AN-1035 specifies solder paste volume, stencil design, and preheat ramp rates to ensure void-free solder joints on both top and bottom drain pads.

IRF6726MTR1PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: DirectFET™ Isometric MT

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 32A (Ta), 180A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.7mOhm @ 32A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 150µA

Gate Charge (Qg) (Max) @ Vgs:: 77 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6140 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.8W (Ta), 89W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DIRECTFET™ MT

IRF6726MTR1PBF FAQ

1.How can I place an order for IRF6726MTR1PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF6726MTR1PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF6726MTR1PBF reliable?

The price and inventory of IRF6726MTR1PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6726MTR1PBF is usually 5 days.

3.What payment methods are accepted for IRF6726MTR1PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6726MTR1PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF6726MTR1PBF?

IRF6726MTR1PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF6726MTR1PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF6726MTR1PBF?

For technical support, including IRF6726MTR1PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6726MTR1PBF requirements.

6.How does Aetrix verify that IRF6726MTR1PBF is sourced from the original manufacturer or authorized distributors?

All IRF6726MTR1PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6726MTR1PBF meets industry standards.

7.What is the process for return or replacement of IRF6726MTR1PBF?

All IRF6726MTR1PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF6726MTR1PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF6726MTR1PBF part is unused and in its original packaging.

Return procedure for IRF6726MTR1PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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