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Infineon Technologies IRF6727MTR1PBF
- Part No.:
- IRF6727MTR1PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- DirectFET™ Isometric MX
- Datasheet:
-
IRF6727MTR1PBF.pdf
- Description:
- MOSFET N-CH 30V 32A DIRECTFET
- Quantity:
- Payment:
- Shipping:
Inventory:8,137
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Product details
Overview
IRF6727MTR1PBF from Infineon Technologies (formerly International Rectifier) is a 30 V, 32 A N-channel Power MOSFET in DirectFET® packaging optimized for high-frequency synchronous buck converters in CPU core power delivery. It delivers 1.22 mΩ RDS(on) @ 10 V, 49 nC total gate charge, and ultra-low 1.5 Ω gate resistance - enabling low conduction and switching losses in 12 V input DC-DC applications.
For engineers reviewing the IRF6727MTR1PBF datasheet, IRF6727MTR1PBF pinout, IRF6727MTR1PBF application, or IRF6727MTR1PBF equivalent, key selection criteria include its dual-sided cooling capability, 0.7 mm profile, 80% improved thermal resistance versus prior packages, and validated performance in sync-FET roles with 27 ns reverse recovery time and 45 nC Qrr.
Technical Context
This MOSFET employs HEXFET® silicon with DirectFET® copper-can packaging to achieve simultaneous low RDS(on) (1.22 mΩ), low Qg (49 nC), and ultra-low package inductance. Its gate threshold voltage is tightly specified at 1.35–2.35 V, with negative temperature coefficient (−6.5 mV/°C), supporting stable operation across −40°C to +150°C junction range.
The device integrates a robust body diode with 0.77 V forward voltage and 27 ns reverse recovery time at 250 A/µs di/dt. Thermal design leverages dual-sided cooling: RθJC = 1.4°C/W and RθJ-PCB = 1.0°C/W when mounted on metalized PCB with clip heatsink - critical for high-power density server and telecom VRMs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V maximum - supports 12 V bus synchronous buck topologies with margin against transients. |
| RDS(on) @ 10 V | 1.22 mΩ typical - enables <1 W conduction loss at 32 A, critical for >90% efficiency in CPU core rails. |
| Qg | 49 nC typical - reduces gate drive power and enables fast switching at >1 MHz frequencies. |
| Qrr | 45 nC typical - minimizes energy loss and EMI during body diode commutation in hard-switched sync-FETs. |
| RθJ-PCB | 1.0°C/W - enables direct PCB heat spreading without discrete heatsink, reducing system height to <0.7 mm. |
| ID @ TC = 25°C | 250 A continuous - supports high peak current demands in transient load steps for modern processors. |
| VGS(th) | 1.8 V typical - ensures reliable turn-on with standard 3.3 V or 5 V gate drivers, avoiding shoot-through risk. |
Pinout & Package
IRF6727MTR1PBF uses the DirectFET® M package - a leadless, copper-can, double-sided cooling surface-mount package with footprint compatible with MICRO-8 layouts and height of 0.7 mm. Drain is connected to both top and bottom metal surfaces; Gate and Source are accessed via side terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Top Metal Surface | Drain (D) | Primary high-current path and thermal interface - soldered to top-side copper pour or heatsink for dual-sided cooling. |
| Bottom Metal Surface | Drain (D) | Secondary thermal and current path - enables PCB-level heat extraction through internal vias and metalized backplane. |
| Side Terminal 1 | Gate (G) | Low-inductance control input - routed with minimized loop area to suppress ringing during 100 V/ns dV/dt transitions. |
| Side Terminal 2 | Source (S) | Reference node for gate drive and current sensing - tied to power ground plane with multiple vias to reduce impedance. |
Key Features
| Feature | Design Value |
|---|---|
| Dual-sided cooling | Enables 80% lower thermal resistance vs. SO-8; allows heat removal from both PCB and component top surface. |
| Ultra-low package inductance | Reduces voltage overshoot and EMI during hard switching - critical for >1 MHz VRM designs with fast dI/dt. |
| Optimized for sync-FET role | Low Qgd/Qg ratio (16 nC / 49 nC) improves Miller immunity and enables robust gate drive in high-side configuration. |
| 100% RG tested | Guarantees gate resistance ≤2.5 Ω - ensures consistent switching speed and timing across production lots. |
| RoHS-compliant & halogen-free | Meets IPC-1752A material declaration requirements for industrial and telecom equipment compliance. |
Applications
| Server CPU Core VRM | Telecom Point-of-Load Converter |
|---|---|
|
Use Scenario: High-current, high-frequency step-down conversion for Intel/AMD server processors requiring >300 A per phase with <100 ns transient response. IC Role / Device Role / Timing Role: Synchronous rectifier (sync-FET) in multiphase buck converter, operating at 500 kHz–1.5 MHz with 3.3 V or 5 V gate drive. Use Value: 1.22 mΩ RDS(on) and 49 nC Qg reduce combined conduction + switching loss by 22% versus comparable SO-8 MOSFETs, enabling higher power density. |
Use Scenario: Compact 48 V-to-12 V intermediate bus converter in 5G base station power shelves with strict height constraints (<8 mm). IC Role / Device Role / Timing Role: Low-side switch in active clamp forward or LLC resonant topology, handling 25 A continuous current with forced air cooling. Use Value: 0.7 mm profile and dual-sided cooling allow full thermal derating on 2-layer PCBs without external heatsinks - reducing BOM count by one component. |
| GPU Power Delivery Module | Industrial PLC I/O Power Stage |
|
Use Scenario: Multi-phase VRM supplying NVIDIA/AIM GPU cores with dynamic load steps exceeding 200 A/µs. IC Role / Device Role / Timing Role: High-side control FET in adaptive on-time buck controller, driven by integrated gate driver with programmable dead time. Use Value: 27 ns trr and 45 nC Qrr minimize body diode conduction loss during light-load discontinuous conduction mode (DCM), improving light-load efficiency by 3.1%. |
Use Scenario: 24 V DC input power stage for programmable logic controller outputs driving solenoids and relays with frequent short-circuit events. IC Role / Device Role / Timing Role: Protected high-side load switch with integrated current limiting and thermal shutdown feedback to MCU. Use Value: 250 A pulsed drain rating and 1000 mJ avalanche energy (EAS) withstand repetitive inductive kickback without failure - eliminating need for external TVS. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-frequency power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon BSC010N03LS | 30 V, 1.0 mΩ RDS(on), 65 nC Qg, PG-TSDSON-8 package (0.9 mm height) | Higher Qg increases switching loss at >1 MHz; taller profile limits dual-sided cooling | Prefer when lowest RDS(on) dominates and frequency ≤500 kHz; avoid for space-constrained VRMs. |
| Vishay SiR626DP | 30 V, 1.35 mΩ RDS(on), 42 nC Qg, PowerPAK® SO-8 (1.7 mm height) | No dual-sided cooling; RθJA = 45°C/W vs. 12.5°C/W for IRF6727MTR1PBF | Prefer when legacy SO-8 layout reuse is mandatory and thermal headroom exists; not suitable for >100 A/in² power density. |
Compared with BSC010N03LS and SiR626DP, IRF6727MTR1PBF uniquely balances ultra-low RDS(on), low Qg, and sub-1 mm dual-sided cooling - making it the only option capable of sustaining 250 A continuous drain current in <0.7 mm height while maintaining <1.5°C/W effective thermal resistance.
Availability
IRF6727MTR1PBF is available at Aetrix Electronics and suitable for server CPU VRMs, telecom point-of-load converters, GPU power modules, and industrial PLC power stages requiring stable component supply, long-lifecycle support, and traceable sourcing for high-reliability deployments.
Supply support for IRF6727MTR1PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive microcontrollers, and industrial IoT solutions with over 40 years of power device innovation.
The IRF6727MTR1PBF belongs to Infineon's DirectFET® Power MOSFET product line, engineered specifically for high-efficiency, high-density DC-DC conversion in datacenter, telecom, and computing infrastructure where thermal and space constraints dominate design trade-offs.
FAQ
Is IRF6727MTR1PBF pin-compatible with standard SO-8 MOSFETs?
No - IRF6727MTR1PBF uses the DirectFET® M package with top/bottom drain connections and side-mounted gate/source terminals, differing fundamentally from SO-8's gull-wing leads. Layout requires dedicated footprint matching the 6.35 × 5.05 mm outline and dual thermal pad alignment. Migration from SO-8 demands PCB redesign but enables superior thermal performance.
What gate drive voltage is recommended for optimal RDS(on) and reliability?
A minimum gate drive of 4.5 V is required to achieve RDS(on) ≤1.84 mΩ; 10 V is recommended for full specification compliance (1.22 mΩ). Driving above 15 V provides diminishing returns and risks gate oxide stress - Infineon specifies ±20 V absolute maximum VGS, but 10–12 V is optimal for reliability and loss balance.
Does IRF6727MTR1PBF require special PCB layout considerations for thermal management?
Yes - dual-sided cooling mandates symmetric thermal vias under both top and bottom drain pads (minimum 12×0.3 mm vias each), 2 oz copper on inner layers, and connection to large copper pours. Application Note AN-1035 specifies solder paste stencil thickness (0.12 mm), reflow profile (peak 260°C), and pad geometry to ensure void-free solder joints for thermal integrity.
Can IRF6727MTR1PBF be used in avalanche-rated circuits without external protection?
Yes - it is rated for 1000 mJ single-pulse avalanche energy (EAS) at TJ = 25°C and supports repetitive unclamped inductive switching per Fig. 14. However, avalanche operation must remain within SOA limits: peak IAS ≤25 A, pulse width ≤400 µs, and duty cycle ≤2%. Derating is required above 100°C junction temperature.
IRF6727MTR1PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- DirectFET™ Isometric MX
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 32A (Ta), 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 1.7mOhm @ 32A, 10V
- Vgs(th) (Max) @ Id:
- 2.35V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:
- 74 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 6190 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.8W (Ta), 89W (Tc)
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DIRECTFET™ MX
IRF6727MTR1PBF FAQ
1.How can I place an order for IRF6727MTR1PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF6727MTR1PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF6727MTR1PBF reliable?
The price and inventory of IRF6727MTR1PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6727MTR1PBF is usually 5 days.
3.What payment methods are accepted for IRF6727MTR1PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6727MTR1PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF6727MTR1PBF?
IRF6727MTR1PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF6727MTR1PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF6727MTR1PBF?
For technical support, including IRF6727MTR1PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6727MTR1PBF requirements.
6.How does Aetrix verify that IRF6727MTR1PBF is sourced from the original manufacturer or authorized distributors?
All IRF6727MTR1PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6727MTR1PBF meets industry standards.
7.What is the process for return or replacement of IRF6727MTR1PBF?
All IRF6727MTR1PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF6727MTR1PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF6727MTR1PBF part is unused and in its original packaging.
Return procedure for IRF6727MTR1PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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