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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF6729MTRPBF

Name: IRF6729MTRPBF
Brand: Infineon Technologies
SKU: IRF6729MTRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF6729MTRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric MX

Datasheet:: IRF6729MTRPBF.pdf

Description:: MOSFET N-CH 30V 31A DIRECTFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF6729MTRPBF from Infineon Technologies is a 30 V, 31 A N-channel HEXFET Power MOSFET with integrated monolithic Schottky diode in DirectFET® SQ package. It delivers 1.4 mΩ R_DS(on) @ 10 V, 42 nC total gate charge, and ultra-low 0.7 mm profile-optimized for synchronous buck converter high-side and low-side (Sync FET) sockets in CPU core DC-DC power stages.

For engineers reviewing the IRF6729MTRPBF datasheet, IRF6729MTRPBF pinout, IRF6729MTRPBF application, or IRF6729MTRPBF equivalent, key selection criteria include R_DS(on) at 4.5 V (2.2 mΩ), Q_rr (40 nC), dual-sided cooling capability, and compatibility with existing SO-8 layout footprints and reflow soldering processes.

Technical Context

This MOSFET employs trench-gate silicon technology and DirectFET® packaging to minimize conduction and switching losses simultaneously. Its integrated Schottky diode reduces reverse recovery charge (Q_rr) by replacing the body diode's slow p-n junction behavior-critical for high-frequency (>1 MHz) synchronous rectification in point-of-load converters.

The device features a gate threshold voltage of 1.8 V (typ), negative temperature coefficient for R_DS(on), and optimized gate charge partitioning (Q_gs2 = 4.9 nC, Q_gd = 14 nC) to enable fast, controllable turn-on/turn-off transitions with minimal voltage overshoot under high di/dt conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V maximum drain-source breakdown voltage-supports 12 V and 24 V input rails with margin for transient spikes.
R_DS(on) @ 10 V	1.4 mΩ typical-enables <1 W conduction loss at 31 A continuous current in compact thermal layouts.
R_DS(on) @ 4.5 V	2.2 mΩ typical-ensures robust gate drive compatibility with 3.3 V and 5 V controllers in low-voltage Sync FET applications.
Q_g total	42 nC typical-balances switching speed and driver power requirements for sub-100 ns turn-on/turn-off times.
Q_rr	40 nC typical-reduced by integrated Schottky diode versus standard MOSFET body diode, lowering hard-switching losses in buck topologies.
R_θJC	1.2 °C/W typical-enables high-power density designs via direct case-to-heatsink thermal path on both top (drain) and bottom sides.
V_GS(th)	1.8 V typical-supports precise gate control with low-voltage PWM drivers and improves noise immunity in noisy power domains.

Pinout & Package

IRF6729MTRPBF uses the DirectFET® SQ package-a leadless, double-sided cooling surface-mount outline measuring 3.85 mm × 3.95 mm × 0.7 mm, with exposed top-side drain and bottom-side source terminals. The package footprint matches SO-8 PCB land patterns while enabling thermal dissipation from both sides.

Pin/Terminal	Circuit Role	Design Meaning
Top Metal Pad	Drain (D)	Primary high-current output terminal; serves as thermal interface to heatsink or copper plane on PCB top layer.
Bottom Metal Pad	Source (S)	Low-impedance return path; electrically and thermally connected to PCB ground plane or source rail.
Side Terminal (left)	Gate (G)	Control input with 1.3 Ω internal gate resistance-minimizes ringing and simplifies gate driver layout.
Side Terminal (right)	Source (S)	Secondary source connection for enhanced current sharing and reduced loop inductance in high-di/dt switching.

Key Features

Feature	Design Value
Integrated Monolithic Schottky Diode	Replaces parasitic body diode to eliminate Q_rr-driven switching loss and reverse recovery noise in synchronous rectifiers.
Dual-Sided Cooling	Enables simultaneous heat extraction from top (drain) and bottom (source) surfaces-improves thermal resistance by 80% vs. conventional SO-8 packages.
Ultra-Low Profile (0.7 mm)	Reduces board stack height and enables use in space-constrained modules such as VRMs and mobile SoC power supplies.
Optimized for Sync FET Socket	Parameters tuned for low-voltage, high-current synchronous buck low-side operation-including 4.5 V R_DS(on) and fast trr (30 ns).
R_g Tested	100% gate resistance screening ensures consistent switching behavior across production lots-critical for timing-critical multi-phase systems.

Applications

CPU Core Voltage Regulator

GPU Power Delivery Module

Use Scenario: High-current, high-frequency DC-DC conversion supplying 0.8–1.2 V to modern x86 and ARM processors at up to 200 A peak.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier (Sync FET) in multiphase buck converter, switching at 500 kHz–1.5 MHz.

Use Value: 1.4 mΩ R_DS(on) and 40 nC Q_rr reduce conduction and switching losses, enabling >92% efficiency at 100 A load.

Use Scenario: Compact, thermally constrained power stage for discrete or integrated GPU voltage regulation in gaming laptops and workstations.

IC Role / Device Role / Timing Role: High-density low-side switch in 3–6 phase interleaved buck topology with tight layout constraints.

Use Value: 0.7 mm profile and dual-sided cooling allow placement beneath GPU die or in narrow board regions without thermal throttling.

Server VRM (Voltage Regulator Module)

AI Accelerator Board Power Stage

Use Scenario: Multi-phase, digitally controlled VRM delivering stable 0.6–1.8 V to server CPUs under dynamic 300+ A loads.

IC Role / Device Role / Timing Role: Synchronous FET in phase-leg configuration, driven by digital PWM controller with adaptive dead-time control.

Use Value: 2.2 mΩ R_DS(on) @ 4.5 V ensures reliable operation with 5 V gate drive, while low Q_gd/Q_g ratio improves EMI performance.

Use Scenario: Point-of-load regulator for high-bandwidth AI inference accelerators requiring rapid load transient response and minimal voltage droop.

IC Role / Device Role / Timing Role: Fast-switching low-side MOSFET in single- or dual-phase buck converter operating above 1 MHz.

Use Value: 30 ns trr and 18.9 nC Q_sw enable clean zero-voltage switching transitions, reducing output ripple and improving transient fidelity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET with integrated Schottky diode applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF6642TRPBF	30 V, 24 A, R_DS(on) = 2.0 mΩ @ 10 V, Q_g = 22 nC, no integrated Schottky diode	Lacks monolithic Schottky-requires external diode or relies on body diode with higher Q_rr (65 nC)	Select when lower gate charge dominates over Q_rr reduction, or when cost sensitivity outweighs efficiency gain.
SiR872DP-T1-GE3	30 V, 35 A, R_DS(on) = 1.3 mΩ @ 10 V, Q_g = 48 nC, integrated Schottky, PowerPAK® 1212-8 package	Higher Q_g and larger 1212 footprint-less compatible with SO-8-reused layouts	Select when absolute lowest R_DS(on) is prioritized and board area allows larger package; verify thermal interface design for single-sided cooling.

Compared with IRF6729MTRPBF, IRF6642TRPBF trades Q_rr reduction for lower gate drive demand, while SiR872DP-T1-GE3 offers marginally lower R_DS(on) but requires layout revision and delivers no thermal advantage due to single-sided cooling architecture.

Availability

IRF6729MTRPBF is available at Aetrix Electronics and suitable for CPU core voltage regulators, GPU power delivery modules, and server VRMs requiring stable component supply, RoHS-compliant manufacturing, and long-term lifecycle support.

Supply support for IRF6729MTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The DirectFET® product line was developed to replace traditional leaded packages in high-efficiency power conversion-targeting synchronous buck, OR-ing, and hot-swap applications where thermal density and switching loss are critical system constraints.

FAQ

What is the maximum continuous drain current for IRF6729MTRPBF at 70°C ambient temperature?

The maximum continuous drain current is 26 A at T_A = 70°C with V_GS = 10 V, mounted on a 1 in² copper board in still air. This rating assumes proper PCB copper area and thermal vias to manage junction temperature within 150°C limit-actual current depends on layout and airflow.

Does IRF6729MTRPBF require a gate resistor for stable operation?

Yes-although it includes an internal 1.3 Ω gate resistance, an external series gate resistor (typically 1–5 Ω) is recommended to dampen ringing, control dV/dt, and prevent false triggering during high-di/dt switching. Values must be selected based on driver strength and layout parasitics per application note AN-1035.

Can IRF6729MTRPBF be used in avalanche-rated circuits?

No-it is not rated for repetitive avalanche operation. The datasheet specifies only single-pulse avalanche energy (E_AS = 1200 mJ max at I_AS = 25 A), intended for limited fault conditions. Continuous operation in avalanche mode risks parametric shift or catastrophic failure; snubber networks or clamping circuits are required for protection.

How does the integrated Schottky diode affect PCB layout compared to standard MOSFETs?

The integrated Schottky eliminates need for an external anti-parallel diode, reducing component count and layout area. However, its forward voltage (V_SD ≈ 0.8 V) is fixed-unlike discrete Schottky selections-so layout must ensure adequate thermal relief for the source-drain path, especially in high-duty-cycle applications where diode conduction dominates.

IRF6729MTRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: DirectFET™ Isometric MX

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 31A (Ta), 190A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.8mOhm @ 31A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 150µA

Gate Charge (Qg) (Max) @ Vgs:: 63 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6030 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.8W (Ta), 104W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DIRECTFET™ MX

IRF6729MTRPBF FAQ

1.How can I place an order for IRF6729MTRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF6729MTRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF6729MTRPBF reliable?

The price and inventory of IRF6729MTRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6729MTRPBF is usually 5 days.

3.What payment methods are accepted for IRF6729MTRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6729MTRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF6729MTRPBF?

IRF6729MTRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF6729MTRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF6729MTRPBF?

For technical support, including IRF6729MTRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6729MTRPBF requirements.

6.How does Aetrix verify that IRF6729MTRPBF is sourced from the original manufacturer or authorized distributors?

All IRF6729MTRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6729MTRPBF meets industry standards.

7.What is the process for return or replacement of IRF6729MTRPBF?

All IRF6729MTRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF6729MTRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF6729MTRPBF part is unused and in its original packaging.

Return procedure for IRF6729MTRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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