Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF6775MTR1PBF

Name: IRF6775MTR1PBF
Brand: Infineon Technologies
SKU: IRF6775MTR1PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRF6775MTR1PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric MZ

Datasheet:: IRF6775MTR1PBF.pdf

Description:: MOSFET N-CH 150V 4.9A DIRECTFET

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:6,537

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRF6775MTR1PBF from Infineon Technologies (formerly International Rectifier) is a 150 V, 47 mΩ N-channel Power MOSFET in DirectFET^TM MZ package, optimized for Class-D audio amplifier half-bridge stages. It delivers ≤0.1% THD at 250 W/channel into 4 Ω, with 25 nC total gate charge, 164 nC body-diode reverse recovery charge, and dual-sided cooling capability.

For engineers reviewing the IRF6775MTR1PBF datasheet, IRF6775MTR1PBF pinout, IRF6775MTR1PBF application, or IRF6775MTR1PBF equivalent, key selection criteria include R_DS(on) stability over temperature, Q_rr/Q_g trade-off for EMI-sensitive audio switching, thermal resistance under double-sided heatsinking, and compatibility with vapor-phase reflow per AN-1035.

Technical Context

This MOSFET employs trench-gate silicon optimized for high-frequency, low-loss Class-D operation. Its 1.4 °C/W junction-to-case thermal resistance and 175 pF effective output capacitance enable fast, low-ringing transitions critical for <100 ns fall time and reduced electromagnetic interference in compact amplifier layouts.

The device integrates a low-V_SD (1.3 V) body diode with 62 ns reverse recovery time and operates with gate threshold voltage between 3.0–5.0 V. Internal gate resistance of 3.0 Ω suppresses oscillation during hard switching while maintaining 11 S transconductance at 5.6 A drain current.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	150 V - supports rail voltages up to ±75 V in bridge-tied load configurations
R_DS(on) @ 10 V	47 mΩ typ. - enables ≥90% efficiency at 250 W/channel into 4 Ω load
Q_g	25.0 nC typ. - reduces gate drive power loss and improves THD linearity
Q_rr	164 nC - minimized body-diode recovery energy lowers EMI and crossover distortion
R_θJC	1.4 °C/W - allows >100 W continuous dissipation with single-side heatsink; dual-side cooling doubles capacity
tr / tf	7.8 / 15 ns - fast edge rates reduce dead-time losses but require careful PCB layout to control ringing
C_oss(eff)	175 pF - fixed effective capacitance governs turn-off timing and snubber design in resonant transitions

Pinout & Package

IRF6775MTR1PBF uses the DirectFET^TM MZ outline: a copper-can, top-side-drain, bottom-side-source/gate package with no leads. It features dual thermal paths-heat flows vertically through both top (drain) and bottom (source/substrate) surfaces-and requires symmetric PCB copper area per AN-1035.

Pin/Terminal	Circuit Role	Design Meaning
Top Metal Surface	Drain (D)	Primary high-current path; serves as thermal interface to upper heatsink or copper plane
Bottom Substrate Pad	Source (S)	Low-inductance return path and primary thermal interface to PCB ground plane
Bottom Edge Terminal	Gate (G)	Control input with 3.0 Ω internal resistance; routed away from power loops to prevent coupling

Key Features

Feature	Design Value
DirectFET^TM MZ packaging	Eliminates bond wires → reduces stray inductance by >50% vs SOIC, suppressing voltage overshoot during 100 A/μs dI/dt
Optimized Q_rr/Q_g ratio	164 nC / 25 nC = 6.56 - balances low THD and low EMI without requiring external Schottky catch diodes
Dual-sided cooling support	Enables thermal resistance reduction from 12.5 °C/W (single-side) to ≤3.5 °C/W (dual-side with heatsinks)
Body diode V_SD	1.3 V max - limits conduction loss during dead-time in half-bridge, improving idle efficiency

Applications

High-Fidelity Home Audio Amplifiers

Professional Stage Power Amplifiers

Use Scenario: 2×250 W stereo Class-D amplifier driving 4 Ω bookshelf speakers with <0.05% THD+N at 1 kHz.

IC Role / Device Role / Timing Role: Half-bridge high-side/low-side switch; synchronized PWM switching at 300–500 kHz with <10 ns propagation skew.

Use Value: 47 mΩ R_DS(on) and 1.4 °C/W R_θJC sustain full power output without forced air cooling.

Use Scenario: 4-channel touring-grade amplifier delivering 1000 W peak into 2 Ω loads with real-time thermal foldback.

IC Role / Device Role / Timing Role: Output stage switch in paralleled half-bridge modules; operated with active gate control to manage shoot-through risk.

Use Value: Dual-sided cooling allows mounting on aluminum chassis + internal heatsink, reducing system thermal mass by 35%.

Automotive Infotainment Subwoofers

Active Studio Monitor Power Stages

Use Scenario: Compact 150 W subwoofer amplifier integrated into vehicle dashboard with ambient temperature up to 85 °C.

IC Role / Device Role / Timing Role: Low-side switch in asymmetric half-bridge; driven with adaptive dead-time to compensate for V_GS(th) drift.

Use Value: R_DS(on) increases only 1.8× from 25 °C to 125 °C, maintaining stable gain and damping factor.

Use Scenario: Bi-amplified near-field monitor with separate 200 W LF and 50 W HF channels, requiring ultra-low noise floor.

IC Role / Device Role / Timing Role: Final-stage switch in discrete gate-driver-coupled topology; operated at 400 kHz to avoid audible switching artifacts.

Use Value: 175 pF C_oss(eff) and 62 ns t_rr minimize capacitive coupling into analog signal paths, preserving SNR >110 dB.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Class-D audio MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF6662MTR1PBF	100 V rating, 3.2 mΩ R_DS(on), 12.5 nC Q_g, same MZ package	Limited to ≤150 W/channel into 4 Ω; lower voltage headroom reduces clipping margin in high-SPL designs	Select when system rail is ≤±50 V and priority is lowest possible conduction loss at moderate power
STW48N60M2	600 V rating, 0.065 Ω R_DS(on), TO-247 package, 95 nC Q_g	Higher Q_g increases gate drive loss and THD at 500 kHz; TO-247 lacks dual-sided cooling	Choose only for legacy designs requiring through-hole mounting or >400 V bus voltage

Compared with IRF6662MTR1PBF and STW48N60M2, the IRF6775MTR1PBF uniquely balances 150 V breakdown, ultra-low Q_rr, and DirectFET thermal performance-making it the only option supporting 250 W/channel with <0.1% THD and passive-cooled operation in space-constrained enclosures.

Availability

IRF6775MTR1PBF is available at Aetrix Electronics and suitable for high-fidelity home audio amplifiers, professional stage power amplifiers, and automotive infotainment subwoofers requiring stable component supply across multi-year production cycles.

Supply support for IRF6775MTR1PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with leadership in silicon and wide-bandgap power devices.

This device belongs to Infineon's DirectFET^TM audio-optimized MOSFET product line, engineered specifically for high-efficiency, low-EMI Class-D amplifier output stages where thermal density and switching fidelity are critical.

FAQ

What is the maximum continuous drain current at 70°C case temperature?

The IRF6775MTR1PBF supports 15 A continuous drain current at T_C = 70°C, derated linearly from 28 A at 25°C using the 0.022 W/°C factor. This rating assumes proper PCB copper area per AN-1035 and dual-sided cooling; single-sided mounting reduces usable current by ~35% due to higher thermal resistance.

Does this MOSFET require a negative gate turn-off voltage?

No. The device operates reliably with 0 V to +15 V gate drive and does not require negative turn-off bias. Its 3.0 Ω internal gate resistance and 3.0–5.0 V V_GS(th) range ensure clean turn-off at 0 V, eliminating need for complex gate driver circuitry in cost-sensitive audio designs.

Can IRF6775MTR1PBF be paralleled for higher power output?

Yes-its positive R_DS(on) temperature coefficient (1.8× increase from 25°C to 125°C) ensures inherent current sharing. Successful paralleling requires matched gate trace lengths, identical gate resistors (≤5 Ω), and symmetrical thermal mounting to maintain ΔT < 5°C between devices during sustained 250 W operation.

Is lead-free reflow compatible with the DirectFET^TM MZ package?

Yes. The IRF6775MTR1PBF is qualified for lead-free reflow up to 260°C peak temperature and complies with JEDEC J-STD-020. AN-1035 specifies stencil aperture dimensions, preheat ramp rates, and soak profiles to prevent solder voiding in the copper-can structure and ensure void-free thermal interface formation.

IRF6775MTR1PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: DirectFET™ Isometric MZ

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 4.9A (Ta), 28A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 56mOhm @ 5.6A, 10V

Vgs(th) (Max) @ Id:: 5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 36 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1411 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.8W (Ta), 89W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DIRECTFET™ MZ

IRF6775MTR1PBF FAQ

1.How can I place an order for IRF6775MTR1PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF6775MTR1PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF6775MTR1PBF reliable?

The price and inventory of IRF6775MTR1PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6775MTR1PBF is usually 5 days.

3.What payment methods are accepted for IRF6775MTR1PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6775MTR1PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF6775MTR1PBF?

IRF6775MTR1PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF6775MTR1PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF6775MTR1PBF?

For technical support, including IRF6775MTR1PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6775MTR1PBF requirements.

6.How does Aetrix verify that IRF6775MTR1PBF is sourced from the original manufacturer or authorized distributors?

All IRF6775MTR1PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6775MTR1PBF meets industry standards.

7.What is the process for return or replacement of IRF6775MTR1PBF?

All IRF6775MTR1PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF6775MTR1PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF6775MTR1PBF part is unused and in its original packaging.

Return procedure for IRF6775MTR1PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…