Infineon Technologies IRF6785MTR1PBF

Overview

IRF6785MTR1PBF from Infineon Technologies (formerly International Rectifier) is a 200 V, 85 mΩ N-channel Power MOSFET in DirectFET^TM MZ package, optimized for Class-D audio amplifier half-bridge stages. It delivers 250 W per channel into 8 Ω, with 26 nC total gate charge, 190 nC body-diode reverse recovery charge, and dual-sided cooling capability for high-power density audio systems.

For engineers reviewing the IRF6785MTR1PBF datasheet, IRF6785MTR1PBF pinout, IRF6785MTR1PBF application, or IRF6785MTR1PBF equivalent, key selection criteria include R_DS(on) stability over temperature, Q_rr-driven THD/EMI trade-offs, DirectFET thermal resistance (R_θJC = 1.4 °C/W), and compatibility with vapor-phase reflow at 260 °C.

Technical Context

This MOSFET employs trench-gate silicon technology with optimized gate oxide and body diode design to minimize conduction and switching losses in high-frequency (≥300 kHz) Class-D output stages. Its low internal gate resistance (R_G(int) ≤ 3.0 Ω) and reduced package stray inductance suppress voltage ringing during fast dV/dt transitions.

The device operates with gate threshold voltage (V_GS(th)) of 3.0–5.0 V and supports 10 V gate drive for full enhancement. Its 140 pF effective output capacitance (C_{oss eff}) and 31 pF reverse transfer capacitance (C_rss) enable predictable hard-switching behavior in complementary half-bridge configurations with tight dead-time control.

Key Specifications

Pinout & Package

IRF6785MTR1PBF uses the DirectFET^TM MZ outline: a metal-can, top-drain, bottom-source/gate substrate package with dual-sided thermal interface capability. Dimensions are 6.3 mm × 4.9 mm × 0.7 mm (L × W × H), RoHS-compliant, lead-free, and qualified for 260 °C reflow.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Class-D audio MOSFET applications.

Compared with IRF6662MTR1PBF and IPB180N10N3GATMA1, IRF6785MTR1PBF offers the optimal balance of low R_DS(on), controlled Q_rr, and DirectFET thermal performance for compact 250 W Class-D modules-delivering measurable THD and thermal advantages without sacrificing layout density.

Availability

IRF6785MTR1PBF is available at Aetrix Electronics and suitable for high-fidelity home audio amplifiers, professional stage monitors, automotive infotainment subwoofers, and studio reference monitors requiring stable component supply and long-term production continuity.

Supply support for IRF6785MTR1PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon and wide-bandgap device physics.

This MOSFET belongs to Infineon's DirectFET^TM Class-D Audio portfolio, engineered specifically to meet the efficiency, linearity, and thermal demands of modern digital audio amplification-replacing legacy wire-bonded packages in space-constrained, high-power-density applications.

FAQ

What is the maximum continuous drain current for IRF6785MTR1PBF at 70°C case temperature?

The maximum continuous drain current (I_D) at T_C = 70°C is 19 A, as specified in the Absolute Maximum Ratings table. This rating assumes proper PCB copper area (1 in² Cu) and adequate heatsinking to maintain junction temperature below 150°C. Derating follows a linear factor of 0.022 W/°C above 70°C ambient.

Can IRF6785MTR1PBF be used in synchronous rectification applications?

No-IRF6785MTR1PBF is not characterized or rated for synchronous rectification. Its body diode parameters (V_SD = 1.3 V, t_rr = 71 ns) are optimized for Class-D commutation, not forward-conduction efficiency. Synchronous rectifier MOSFETs require lower V_SD, faster t_rr, and specific gate-drive timing margins not guaranteed here.

Is the DirectFET MZ package compatible with standard reflow soldering profiles?

Yes-the IRF6785MTR1PBF is qualified for lead-free reflow up to 260°C peak temperature. Compatibility requires adherence to Application Note AN-1035, including recommended stencil aperture design, substrate layout, and vapor-phase or convection profile ramp rates to avoid solder voiding or thermal stress on the metal can.

How does the 1.4 °C/W R_θJC translate to real-world thermal performance?

With R_θJC = 1.4 °C/W and a typical heatsink-to-ambient resistance of 0.5 °C/W, the total thermal path yields ~1.9 °C/W. At 250 W dissipation (worst-case half-bridge conduction + switching), this results in ~475 °C junction rise-so actual use relies on pulsed operation and PCB copper spreading. In practice, 250 W/channel operation achieves ~110 °C T_J with dual-sided cooling and 200 LFM airflow.