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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF6794MTR1PBF

Name: IRF6794MTR1PBF
Brand: Infineon Technologies
SKU: IRF6794MTR1PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF6794MTR1PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric MX

Datasheet:: IRF6794MTR1PBF.pdf

Description:: MOSFET N-CH 25V 32A DIRECTFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF6794MTR1PBF from Infineon Technologies is a 25 V, 32 A (T_A = 25°C), N-channel HEXFET Power MOSFET with integrated monolithic Schottky diode in DirectFET^TM package. It delivers 1.3 mΩ R_DS(on) @ 10 V, 31 nC total gate charge, and 0.7 mm profile-optimized for synchronous buck converter high-side and low-side FET sockets in CPU core DC-DC applications.

For engineers reviewing the IRF6794MTR1PBF datasheet, IRF6794MTR1PBF pinout, IRF6794MTR1PBF application, or IRF6794MTR1PBF equivalent, key selection criteria include ultra-low R_DS(on), dual-sided cooling capability, integrated Schottky diode for Q_rr reduction, and compatibility with existing SO-8 footprint layouts and reflow soldering processes.

Technical Context

This MOSFET employs trench-gate HEXFET silicon with optimized cell pitch and reduced gate-drain charge (Q_gd = 11 nC) to minimize switching losses in high-frequency (>500 kHz) synchronous buck topologies. Its integrated Schottky diode replaces the body diode, cutting reverse recovery charge (Q_rr = 51 nC typ.) and eliminating associated voltage spikes and EMI.

The DirectFET package uses copper substrate with top-side drain and bottom-side source terminals, enabling simultaneous PCB-side and heatsink-side thermal conduction. Junction-to-case thermal resistance is 1.2°C/W, and junction-to-PCB is 1.0°C/W-achieving 80% lower thermal resistance than comparable SO-8 packages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	25 V - Maximum blocking voltage for 12 V input rail systems with margin
R_DS(on) @ 10 V	1.3 mΩ - Enables ≤10 mW conduction loss at 32 A, critical for <1% efficiency loss in CPU VRMs
Q_g	31 nC - Low gate drive energy supports fast turn-on with minimal driver IC stress
Q_rr	51 nC - Integrated Schottky diode reduces reverse recovery loss by >90% vs. standard body diode
R_θJC	1.2°C/W - Enables direct heatsink mounting for high-power density designs without thermal derating
V_GS(th)	1.8 V (typ.) - Ensures robust turn-on with 3.3 V or 5 V gate drivers common in digital PWM controllers
I_D @ T_A = 25°C	32 A - Sustains full load current in single-phase CPU core converters without forced airflow

Pinout & Package

Package: DirectFET^TM SQ (Surface-mount, 0.7 mm height, SO-8 footprint-compatible, copper substrate with top-drain/bottom-source terminal configuration).

Pin/Terminal	Circuit Role	Design Meaning
Top Metal Pad (Drain)	High-current power output / heat sink interface	Primary current path and main thermal conduction surface-designed for direct heatsink contact or copper pour
Bottom Source Pads (S1–S4)	Power return / gate reference / thermal path	Four parallel low-inductance source connections reduce loop inductance and improve thermal transfer to PCB
Side Gate Pad (G)	Control input	Low-impedance gate connection minimizes ringing; compatible with standard 0.5 mm pitch routing

Key Features

Feature	Design Value
Integrated monolithic Schottky diode	Eliminates body diode reverse recovery, reducing Q_rr to 51 nC and enabling zero-voltage switching in synchronous rectification
Dual-sided cooling architecture	Simultaneous thermal conduction through top (drain-to-heatsink) and bottom (source-to-PCB), lowering effective R_θJA to 12.5°C/W
Ultra-low package inductance	Minimizes voltage overshoot during hard switching-critical for <10 ns rise/fall time operation
100% R_G tested	Guarantees gate resistance ≤0.30 Ω, ensuring consistent switching speed and driver compatibility across production lots
RoHS-compliant, lead-free, bromide-free	Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL-1), suitable for standard reflow without baking

Applications

CPU Core Voltage Regulator (VRM)

GPU Power Delivery Module

Use Scenario: Single- or multi-phase 12 V input → 0.8–1.3 V output DC-DC conversion for Intel/AMD microprocessors.

IC Role / Device Role / Timing Role: Low-side synchronous FET in buck converter phase leg, operating at 300–1000 kHz with 30–60 ns dead-time control.

Use Value: 1.3 mΩ R_DS(on) and 51 nC Q_rr reduce conduction + switching losses by ≥18% vs. prior-gen SO-8 MOSFETs, enabling >95% peak efficiency at 100 A load.

Use Scenario: High-current, low-voltage power stage in discrete or module-based GPU VRMs for datacenter accelerators.

IC Role / Device Role / Timing Role: High-current sync-FET handling up to 250 A pulsed current per phase, driven by dedicated gate controller with adaptive dead-time.

Use Value: Dual-sided cooling sustains 32 A continuous current at <85°C case temperature under natural convection-enabling compact, fanless GPU board designs.

Server Memory Channel Regulator

AI Accelerator Core Supply

Use Scenario: Point-of-load (POL) regulator supplying DDR5 memory channels with fast transient response requirements.

IC Role / Device Role / Timing Role: Low-side FET in 300–500 kHz buck converter with tight output voltage regulation (±10 mV) and sub-100 ns load-step response.

Use Value: Low Q_g/Q_gd ratio (31 nC / 11 nC) enables precise gate timing control, minimizing shoot-through risk during rapid load transients.

Use Scenario: Multi-phase core supply for AI inference chips requiring >400 A total current at 0.75–0.9 V.

IC Role / Device Role / Timing Role: Sync-FET in interleaved buck stages, operated with phase-shifted PWM to reduce input/output ripple and EMI.

Use Value: 0.7 mm profile allows double-sided board assembly-increasing power density by 2.3× vs. SO-8 while maintaining thermal performance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF6662TRPBF	R_DS(on) = 1.6 mΩ @ 10 V; Q_g = 26 nC; no integrated Schottky diode	Lacks Q_rr reduction-requires external Schottky or careful dead-time tuning to avoid body diode conduction	Preferred where cost sensitivity outweighs Q_rr-driven efficiency gains and layout allows external diode placement
SiR626DP-T1-GE3	R_DS(on) = 1.4 mΩ @ 10 V; Q_g = 34 nC; TrenchFET^® package, 0.9 mm height	Higher profile limits dual-sided cooling; higher Q_g increases driver power demand	Selected when legacy PCB land pattern requires TO-252-2 or when thermal interface to heatsink is not feasible

Compared with IRF6662TRPBF and SiR626DP-T1-GE3, the IRF6794MTR1PBF uniquely combines lowest R_DS(on), integrated Schottky diode, and sub-0.7 mm height-making it the only option that simultaneously satisfies ultra-high efficiency, ultra-thin form factor, and simplified layout in next-gen CPU/GPU VRMs.

Availability

IRF6794MTR1PBF is available at Aetrix Electronics and suitable for CPU core voltage regulators, GPU power delivery modules, and AI accelerator core supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing for high-volume production.

Supply support for IRF6794MTR1PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs-with leadership in silicon and wide-bandgap power devices.

The IRF6794MTR1PBF belongs to Infineon's DirectFET^TM HEXFET^® product line, engineered specifically for high-frequency, high-efficiency DC-DC conversion in computing and datacenter power applications.

FAQ

What is the maximum continuous drain current at 70°C ambient temperature?

The IRF6794MTR1PBF supports 20 A continuous drain current at T_A = 70°C with proper PCB copper area (1 in² Cu board). This rating assumes natural convection cooling and accounts for thermal derating due to increased ambient temperature-verified per JEDEC JESD51-2 test conditions.

Does the integrated Schottky diode replace the body diode entirely?

Yes-the monolithic Schottky diode is electrically in parallel with the MOSFET's intrinsic body diode but has significantly lower forward voltage (V_SD ≤ 0.75 V) and near-zero reverse recovery charge. Under normal synchronous operation, the Schottky conducts all freewheeling current, preventing body diode turn-on and associated losses.

Can IRF6794MTR1PBF be used in avalanche-rated circuits?

No-it is not rated or characterized for repetitive avalanche operation. The datasheet specifies only single-pulse avalanche energy (E_AS = 400 mJ max), and the device lacks guaranteed ruggedness for unclamped inductive switching. Designers must implement snubbers or clamp circuits to avoid exceeding V_DSS during transients.

Is the DirectFET SQ package compatible with standard SO-8 reflow profiles?

Yes-its copper substrate and lead-free termination meet IPC-J-STD-020 MSL-1 requirements. It withstands peak reflow temperatures up to 260°C for 30 seconds and is qualified for vapor-phase, infrared, and convection soldering using standard SO-8 thermal profiles without modification.

IRF6794MTR1PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: DirectFET™ Isometric MX

Packaging:: Cut Tape (CT)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 32A (Ta), 200A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.7mOhm @ 32A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 47 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4420 pF @ 13 V

FET Feature:: Schottky Diode (Body)

Power Dissipation (Max):: 2.8W (Ta), 100W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DIRECTFET™ MX

IRF6794MTR1PBF FAQ

1.How can I place an order for IRF6794MTR1PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF6794MTR1PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF6794MTR1PBF reliable?

The price and inventory of IRF6794MTR1PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6794MTR1PBF is usually 5 days.

3.What payment methods are accepted for IRF6794MTR1PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6794MTR1PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF6794MTR1PBF?

IRF6794MTR1PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF6794MTR1PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF6794MTR1PBF?

For technical support, including IRF6794MTR1PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6794MTR1PBF requirements.

6.How does Aetrix verify that IRF6794MTR1PBF is sourced from the original manufacturer or authorized distributors?

All IRF6794MTR1PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6794MTR1PBF meets industry standards.

7.What is the process for return or replacement of IRF6794MTR1PBF?

All IRF6794MTR1PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF6794MTR1PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF6794MTR1PBF part is unused and in its original packaging.

Return procedure for IRF6794MTR1PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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