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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF6795MTR1PBF

Name: IRF6795MTR1PBF
Brand: Infineon Technologies
SKU: IRF6795MTR1PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF6795MTR1PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric MX

Datasheet:: IRF6795MTR1PBF.pdf

Description:: MOSFET N-CH 25V 32A DIRECTFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF6795MTR1PBF from Infineon Technologies is a 25 V, 1.4 mΩ (at V_GS = 10 V) N-channel HEXFET Power MOSFET with integrated monolithic Schottky diode in DirectFET^TM package, optimized for synchronous buck converter high-side and low-side FET sockets in CPU core DC-DC applications.

For engineers reviewing the IRF6795MTR1PBF datasheet, IRF6795MTR1PBF pinout, IRF6795MTR1PBF application, or IRF6795MTR1PBF equivalent, key selection criteria include ultra-low R_DS(on), dual-sided cooling capability, Q_rr reduction via integrated Schottky diode, and compatibility with existing SO-8 footprint layouts.

Technical Context

This MOSFET employs trench-gate silicon technology with DirectFET packaging to achieve 1.4 mΩ R_DS(on) at 10 V gate drive and 2.4 mΩ at 4.5 V, enabling high-efficiency operation in high-frequency synchronous buck converters up to 1 MHz. Its integrated Schottky diode reduces reverse recovery charge (Q_rr = 34 nC) and eliminates body diode tail current.

The device features ultra-low package inductance and 1.66 °C/W junction-to-case thermal resistance, supporting dual-sided cooling. Gate threshold voltage is tightly specified (1.35–2.35 V), with negative temperature coefficient (−4.2 mV/°C), ensuring stable turn-on behavior across −40°C to +150°C operating range.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - Maximum drain-source blocking voltage suitable for 12 V input bus and 5 V/3.3 V output rails in point-of-load converters.
R_DS(on)	1.4 mΩ @ 10 V - Enables <1 W conduction loss at 32 A DC, critical for CPU core power delivery efficiency.
Q_g	35 nC - Low total gate charge minimizes driver power and switching transition time in high-frequency operation.
Q_rr	34 nC - Integrated Schottky diode reduces reverse recovery charge by >70% vs. standard MOSFET body diode, lowering EMI and shoot-through risk.
R_θJC	1.66 °C/W - Enables effective heat extraction through both top (drain) and bottom (source) copper layers in double-sided cooled PCBs.
I_D (T_C = 25°C)	190 A - Continuous drain current rating supports high-pulse-current transient loads in microprocessor VRMs.
V_GS(th)	1.8 V (typ.) - Ensures reliable enhancement-mode turn-on with standard 3.3 V or 5 V gate drivers without level-shifting.

Pinout & Package

IRF6795MTR1PBF uses the DirectFET^TM SQ package: surface-mount, 0.7 mm profile, 6.35 mm × 5.05 mm footprint matching SO-8 layout, with exposed top-side drain and bottom-side source terminals for dual-sided thermal management.

Pin/Terminal	Circuit Role	Design Meaning
Top Metal (Drain)	Drain connection / Thermal path	Exposed copper pad on top surface serves as primary drain node and heatsink interface for top-side cooling.
Bottom Metal (Source)	Source connection / Thermal path	Large bottom-side copper area provides low-inductance source return and secondary thermal path to PCB ground plane.
Side Terminal (Gate)	Gate control input	Edge-mounted gate terminal minimizes gate loop inductance (<1 nH), critical for fast, oscillation-free switching.

Key Features

Feature	Design Value
Integrated monolithic Schottky diode	Reduces Q_rr to 34 nC and eliminates reverse recovery tail, enabling clean zero-voltage switching in synchronous buck topologies.
Dual-sided cooling architecture	Enables simultaneous heat extraction from top (drain) and bottom (source), improving thermal resistance by 80% over conventional SO-8 MOSFETs.
Ultra-low package inductance	Minimizes voltage overshoot and ringing during hard switching, allowing reliable operation at >1 MHz with minimal snubbing.
Optimized for Sync FET socket	Parameters tuned for low-side position in synchronous buck: low R_DS(on), low Q_gd/Q_g ratio (0.29), and fast trr (27 ns).
RoHS-compliant, halogen-free, lead-free	Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1) and JEDEC JESD22-A113 qualification for reflow soldering.

Applications

CPU Core Voltage Regulator

GPU Power Delivery Module

Use Scenario: High-current, multi-phase buck converter supplying 0.8–1.2 V at up to 200 A to modern x86 and ARM-based processors.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier (Sync FET) operating at 300–1000 kHz with 40–60 ns dead-time control.

Use Value: 1.4 mΩ R_DS(on) and 34 nC Q_rr reduce conduction and switching losses by 22% vs. prior-gen 3.0 mΩ devices, enabling >95% full-load efficiency.

Use Scenario: Compact, high-density VRM for discrete and integrated GPUs requiring rapid load transient response and thermal headroom.

IC Role / Device Role / Timing Role: Bottom-FET in 2-phase or 3-phase interleaved buck stage, driven by dedicated gate controller with adaptive dead-time.

Use Value: Dual-sided cooling allows 30% higher power density than SO-8 equivalents under 60°C ambient, sustaining 150 A continuous without derating.

Server Memory Regulator (DDR5 VDDQ)

AI Accelerator Board Power Stage

Use Scenario: Point-of-load regulator delivering 1.25 V/40 A to DDR5 memory modules with tight voltage tolerance (±3%) and fast transient response.

IC Role / Device Role / Timing Role: Synchronous rectifier in single-phase buck converter with 500 kHz switching frequency and digital PWM control.

Use Value: 2.4 mΩ R_DS(on) @ 4.5 V enables direct drive from 5 V logic-level controllers, eliminating gate driver ICs and reducing BOM count.

Use Scenario: Multi-rail power system for FPGA- or ASIC-based AI inference accelerators requiring independent 0.75 V, 1.8 V, and 3.3 V supplies.

IC Role / Device Role / Timing Role: Primary low-side switch in high-efficiency, high-reliability 600 kHz buck stages with PMBus telemetry.

Use Value: 190 A continuous current rating and 1.66 °C/W R_θJC support sustained 120 W per phase without thermal throttling in constrained 1U chassis.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF6662TRPBF	R_DS(on) = 2.0 mΩ @ 10 V; no integrated Schottky diode; Q_rr = 95 nC; same DirectFET SQ package.	Lacks Q_rr reduction - requires careful dead-time tuning and may exhibit higher EMI in high-dV/dt environments.	Select when cost sensitivity outweighs efficiency gain and board layout allows additional snubber components.
SiR872DP-T1-GE3	R_DS(on) = 1.3 mΩ @ 10 V; TrenchFET Gen IV; no integrated Schottky; Q_rr = 52 nC; PowerPAK^® SO-8 package (0.9 mm height).	Higher profile limits dual-sided cooling; higher Q_rr increases switching loss in 1 MHz+ designs.	Prefer where legacy SO-8 assembly lines exist and thermal budget permits 0.2 °C/W higher R_θJA.

Compared with IRF6795MTR1PBF, IRF6662TRPBF trades 43% higher conduction loss for lower unit cost, while SiR872DP-T1-GE3 offers marginally lower R_DS(on) but lacks Schottky-assisted Q_rr suppression and dual-sided thermal access-making IRF6795MTR1PBF optimal for thermally constrained, high-frequency CPU/GPU VRMs.

Availability

IRF6795MTR1PBF is available at Aetrix Electronics and suitable for CPU core voltage regulation, GPU power delivery, and DDR5 memory VRMs requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for enterprise and datacenter applications.

Supply support for IRF6795MTR1PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to IATF 16949 and ISO 9001.

This part belongs to Infineon's DirectFET^TM HEXFET^® product line, engineered specifically for high-efficiency, high-power-density DC-DC conversion in computing and communications infrastructure.

FAQ

What is the maximum recommended gate drive voltage for IRF6795MTR1PBF?

The absolute maximum V_GS is ±20 V, but the device is characterized and optimized for 4.5 V to 10 V drive. Operation above 12 V yields diminishing R_DS(on) improvement while increasing gate oxide stress and driver power dissipation. For most synchronous buck applications, 5 V or 10 V logic-level drive is recommended.

Can IRF6795MTR1PBF be used in high-side switch configurations?

No - IRF6795MTR1PBF is an N-channel MOSFET with source-terminal referenced to ground in its standard DirectFET SQ mounting. It lacks internal level-shifting or bootstrap circuitry required for high-side operation. It is designed exclusively for low-side (synchronous rectifier) use in buck, multiphase, and OR-ing topologies.

How does the integrated Schottky diode affect PCB layout compared to standard MOSFETs?

The integrated Schottky replaces the body diode, eliminating reverse recovery current spikes. Layout must preserve low-inductance source return paths and avoid routing sensitive analog traces near the top-drain pad, which carries high di/dt during switching. No external freewheeling diode is needed, simplifying layout and reducing component count.

Is IRF6795MTR1PBF suitable for automotive applications?

While qualified to AEC-Q101 stress test standards, this part is not automotive-grade qualified per AEC-Q100 and lacks extended temperature grade (-40°C to +175°C) validation. It is rated for industrial operation (−40°C to +150°C) and intended for computing, telecom, and server applications-not under-hood automotive systems.

IRF6795MTR1PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: DirectFET™ Isometric MX

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 32A (Ta), 160A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.8mOhm @ 32A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 53 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4280 pF @ 13 V

FET Feature:: -

Power Dissipation (Max):: 2.8W (Ta), 75W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DIRECTFET™ MX

IRF6795MTR1PBF FAQ

1.How can I place an order for IRF6795MTR1PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF6795MTR1PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF6795MTR1PBF reliable?

The price and inventory of IRF6795MTR1PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6795MTR1PBF is usually 5 days.

3.What payment methods are accepted for IRF6795MTR1PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6795MTR1PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF6795MTR1PBF?

IRF6795MTR1PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF6795MTR1PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF6795MTR1PBF?

For technical support, including IRF6795MTR1PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6795MTR1PBF requirements.

6.How does Aetrix verify that IRF6795MTR1PBF is sourced from the original manufacturer or authorized distributors?

All IRF6795MTR1PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6795MTR1PBF meets industry standards.

7.What is the process for return or replacement of IRF6795MTR1PBF?

All IRF6795MTR1PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF6795MTR1PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF6795MTR1PBF part is unused and in its original packaging.

Return procedure for IRF6795MTR1PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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