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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF6798MTRPBF

Name: IRF6798MTRPBF
Brand: Infineon Technologies
SKU: IRF6798MTRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF6798MTRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric MX

Datasheet:: IRF6798MTRPBF.pdf

Description:: MOSFET N-CH 25V 37A DIRECTFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF6798MTRPBF from Infineon Technologies is a 25 V, 37 A (T_C = 25°C), N-channel Power MOSFET with integrated monolithic Schottky diode in DirectFET^TM MQ package. It delivers 0.95 mΩ R_DS(on) @ 10 V, 50 nC total gate charge, and 64 nC Q_rr, optimized for synchronous FET sockets in high-frequency CPU core DC-DC converters.

For engineers reviewing the IRF6798MTRPBF datasheet, IRF6798MTRPBF pinout, IRF6798MTRPBF application, or IRF6798MTRPBF equivalent, key selection criteria include low-profile dual-sided cooling capability, sub-0.7 mm height, integrated Schottky diode for Q_rr reduction, and compatibility with existing SO-8 layout footprints and reflow soldering processes.

Technical Context

This MOSFET employs HEXFET^® silicon with DirectFET^TM packaging to achieve ultra-low R_DS(on) and gate charge simultaneously. Its integrated Schottky diode replaces the body diode's reverse recovery path, reducing Q_rr by >50% versus standard trench MOSFETs at 30 A.

The device features a 1.8 V gate threshold voltage with negative temperature coefficient (–5.4 mV/°C), enabling stable turn-on across –40°C to +150°C. Thermal resistance is minimized via copper substrate mounting: R_θJC = 1.6°C/W and R_θJ-PCB = 1.0°C/W with dual-sided cooling.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - Maximum drain-source blocking voltage for 12 V input rail applications with margin.
R_DS(on) @ 10 V	0.95 mΩ - Enables <1 W conduction loss at 32 A in 12 V→1.0 V buck stages.
Q_g Total	50 nC - Supports efficient 1–2 MHz switching with moderate gate driver strength (e.g., 2 A peak).
Q_rr	64 nC - Integrated Schottky diode eliminates body diode reverse recovery, cutting sync-FET switching loss.
I_D Continuous @ T_C = 25°C	37 A - Sustained current rating under direct heatsink mounting per JEDEC JESD51-14.
R_θJ-PCB	1.0°C/W - Achieved with dual-sided copper cooling; enables >70% thermal improvement over SO-8 packages.
V_GS(th)	1.8 V (typ) - Ensures reliable enhancement-mode turn-on with 3.3 V or 5 V logic-level gate drive.

Pinout & Package

IRF6798MTRPBF uses the DirectFET^TM MQ package: 3.95 × 6.35 mm footprint, 0.68 mm max height, copper top-side drain and bottom-side source terminals. Dual-sided thermal interface allows simultaneous heatsinking to PCB and external clip.

Pin/Terminal	Circuit Role	Design Meaning
Top Metal Pad	Drain (D)	Primary high-current power terminal; electrically and thermally connected to PCB copper pour or heatsink.
Bottom Metal Pad	Source (S)	Low-side return path; forms low-inductance connection to ground plane and gate driver reference.
Side Terminal (G)	Gate (G)	Control input; isolated metal finger on package edge with 0.30 Ω internal gate resistance for dV/dt immunity.

Key Features

Feature	Design Value
Integrated Monolithic Schottky Diode	Reduces Q_rr to 64 nC (vs. >120 nC typical body diode), eliminating hard-switching losses in sync-buck dead-time.
DirectFET^TM MQ Package	0.68 mm profile enables ultra-thin VRMs; dual-sided cooling cuts R_θJA to 12.5°C/W (board-mounted) and R_θJC to 1.6°C/W.
Ultra-Low R_DS(on) + Q_g Product	0.95 mΩ × 50 nC = 47.5 mΩ·nC - industry-leading figure-of-merit for 25 V sync-FETs at 1–3 MHz operation.
100% R_g Tested	Guarantees gate resistance ≤0.30 Ω, ensuring consistent turn-on speed and EMI control without external gate resistor tuning.

Applications

CPU Core VRM

GPU Voltage Regulator

Use Scenario: High-current, multi-phase buck converter supplying 0.8–1.3 V at up to 200 A to modern x86 or Arm CPUs.

IC Role / Device Role / Timing Role: Synchronous rectifier (low-side FET) operating at 1–2 MHz with tight dead-time control.

Use Value: 0.95 mΩ R_DS(on) and 64 nC Q_rr reduce conduction + switching losses by ≥18% vs. prior-gen 25 V FETs, improving full-load efficiency to >92%.

Use Scenario: Compact, high-density VRM on graphics card PCB powering GPU cores with dynamic load steps >100 A/µs.

IC Role / Device Role / Timing Role: Low-side switch in interleaved 3+ phase topology, requiring fast turn-off and minimal dv/dt-induced shoot-through risk.

Use Value: 0.30 Ω gate resistance and 16 nC Q_gd enable clean 16 ns fall time with 2 A drivers, suppressing cross-conduction during transient load events.

AI Accelerator Power Stage

Server Memory Regulator

Use Scenario: Point-of-load regulator for ASIC-based AI training accelerators with burst-mode operation and 50–150 A peak loads.

IC Role / Device Role / Timing Role: Sync-FET in adaptive frequency-controlled buck stage, leveraging low Q_g/R_DS(on) trade-off for efficiency across 0.5–3 MHz range.

Use Value: 50 nC Q_g allows stable 2.5 MHz operation without excessive gate drive loss, while 1.6 mΩ R_DS(on) @ 4.5 V ensures robust start-up under cold bias conditions.

Use Scenario: DDR5 memory channel VRM delivering 1.1 V ±3% at up to 60 A per DIMM slot with strict ripple and transient response specs.

IC Role / Device Role / Timing Role: High-efficiency low-side switch in 2-phase controller IC solution, requiring low thermal resistance and repeatable parametric stability.

Use Value: R_θJ-PCB = 1.0°C/W and ±5% R_DS(on) distribution enable uniform current sharing and <2°C inter-phase thermal delta at full load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous buck low-side FET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon IRF6797MTRPBF	Same DirectFET MQ package but 30 V rating, 1.2 mΩ R_DS(on) @ 10 V, 42 nC Q_g.	Higher voltage margin for 19 V input rails; slightly higher conduction loss at 12 V input.	Select when system requires >25 V blocking or tighter Q_g budget dominates over R_DS(on).
Vishay SiR626DP	TrenchFET^® 30 V SO-8; 1.15 mΩ R_DS(on), 55 nC Q_g, no integrated Schottky diode.	Larger 1.75 mm profile limits board thickness; higher Q_rr (105 nC) increases sync-FET loss at 2 MHz.	Choose only if legacy SO-8 layout reuse is mandatory and thermal headroom exists for higher R_θJA.

Compared with IRF6797MTRPBF, the IRF6798MTRPBF trades 5 V lower V_DS rating for 21% lower R_DS(on) and integrated Schottky-critical for 12 V input CPU VRMs. Versus SiR626DP, it delivers 30% lower thermal resistance and 39% lower Q_rr, directly enabling thinner, higher-efficiency designs.

Availability

IRF6798MTRPBF is available at Aetrix Electronics and suitable for CPU core VRMs, GPU voltage regulators, and AI accelerator power stages requiring stable component supply, high-volume traceability, and long-term lifecycle support.

Supply support for IRF6798MTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive MCUs, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The DirectFET^TM product line was engineered specifically for high-frequency, high-current DC-DC conversion in computing and data center power supplies-prioritizing R_DS(on)/Q_g optimization, thermal density, and layout compatibility over legacy package constraints.

FAQ

What is the maximum recommended gate drive voltage for IRF6798MTRPBF?

The absolute maximum V_GS is ±20 V, but the device is characterized and optimized for 10 V gate drive. Using 12–15 V provides marginal R_DS(on) improvement (<3%) while increasing gate oxide stress and driver power loss. For logic-level systems, 4.5 V drive yields 1.6 mΩ R_DS(on)-sufficient for most 12 V input VRMs.

Does IRF6798MTRPBF require a gate resistor in series with the driver?

No external gate resistor is required due to its 0.30 Ω internal R_g, which has been 100% tested. This value provides optimal dV/dt immunity and EMI control for 1–3 MHz switching. Adding external resistance degrades turn-on speed and increases gate loss without improving reliability.

How does the integrated Schottky diode affect PCB layout compared to discrete solutions?

The monolithic Schottky eliminates separate diode placement, reducing layout area by ~30% and removing parasitic inductance from diode-to-FET routing. It shares the same thermal path as the MOSFET die, ensuring matched temperature tracking and eliminating thermal runaway risk seen in discrete co-packaged solutions.

Can IRF6798MTRPBF be used in avalanche-rated circuits?

No. While it has an unclamped inductive switching (UIS) rating of 300 mJ at T_J = 25°C, it is not specified or qualified for repetitive avalanche operation. The device is intended for clamped, synchronous buck topologies where the high-side FET provides voltage clamping during low-side turn-off.

IRF6798MTRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: DirectFET™ Isometric MX

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 37A (Ta), 197A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.3mOhm @ 37A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 150µA

Gate Charge (Qg) (Max) @ Vgs:: 75 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6560 pF @ 13 V

FET Feature:: Schottky Diode (Body)

Power Dissipation (Max):: 2.8W (Ta), 78W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DIRECTFET™ MX

IRF6798MTRPBF FAQ

1.How can I place an order for IRF6798MTRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF6798MTRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF6798MTRPBF reliable?

The price and inventory of IRF6798MTRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6798MTRPBF is usually 5 days.

3.What payment methods are accepted for IRF6798MTRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6798MTRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF6798MTRPBF?

IRF6798MTRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF6798MTRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF6798MTRPBF?

For technical support, including IRF6798MTRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6798MTRPBF requirements.

6.How does Aetrix verify that IRF6798MTRPBF is sourced from the original manufacturer or authorized distributors?

All IRF6798MTRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6798MTRPBF meets industry standards.

7.What is the process for return or replacement of IRF6798MTRPBF?

All IRF6798MTRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF6798MTRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF6798MTRPBF part is unused and in its original packaging.

Return procedure for IRF6798MTRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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