Infineon Technologies IRF6811STRPBF-INF

Overview

IRF6811STRPBF-INF from Infineon Technologies (formerly International Rectifier) is a 25 V, 19 A N-channel enhancement-mode Power MOSFET in DirectFET® SQ package, optimized as the control FET in high-frequency synchronous buck converters operating from a 12 V input bus. It delivers 2.8 mΩ R_DS(on) @ 10 V, 4.1 mΩ @ 4.5 V, 11 nC total gate charge, and ultra-low 0.4 Ω gate resistance for minimal switching losses in CPU core DC-DC applications.

For engineers reviewing the IRF6811STRPBF-INF datasheet, IRF6811STRPBF-INF pinout, IRF6811STRPBF-INF application, or IRF6811STRPBF-INF equivalent, key selection criteria include low R_DS(on) at 4.5 V, dual-sided cooling capability, sub-0.7 mm profile, and compatibility with existing MICRO-8 footprint layouts and vapor-phase reflow processes per AN-1035.

Technical Context

This MOSFET employs HEXFET® silicon on a DirectFET® SQ copper-clip package, enabling dual-sided thermal interface-top-side to heatsink and bottom-side to PCB-reducing R_θJA to 12.5 °C/W (with heatsink) and improving thermal resistance by 80% versus prior packages. Its gate structure minimizes Q_gd/Q_gs2 ratio (4.2 nC / 1.4 nC), supporting fast, low-loss hard-switching.

The device is characterized for operation up to T_J = 150 °C, with V_GS(th) tightly distributed (1.1–2.1 V), negative temperature coefficient for R_DS(on), and robust unclamped inductive switching capability (E_AS = 120 mJ @ I_AS = 15 A). Body diode t_rr is 18–27 ns with Q_rr = 23–35 nC, suitable for synchronous rectification timing constraints.

Key Specifications

Pinout & Package

DirectFET® SQ package: top-side drain (D), bottom-side source (S), and gate (G) on perimeter; no traditional leads; copper-clip construction with dual thermal interface surfaces. Dimensions: 4.8 mm × 3.8 mm × 0.7 mm max (imperial: 0.191″ × 0.156″ × 0.028″).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel control FET applications.

Compared with IRF6662TRPBF and SiR626DP-T1-GE3, the IRF6811STRPBF-INF uniquely combines lowest R_DS(on) at 4.5 V (4.1 mΩ), smallest profile (<0.7 mm), and dual-sided thermal path-making it optimal for space-constrained, high-efficiency CPU/GPU VRMs where both conduction and switching losses must be minimized simultaneously.

Availability

IRF6811STRPBF-INF is available at Aetrix Electronics and suitable for CPU core voltage regulators, server VRMs, GPU power delivery, and high-frequency POL converters requiring stable component supply, RoHS-compliant packaging, and long-term industrial lifecycle support.

Supply support for IRF6811STRPBF-INF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with deep expertise in silicon and wide-bandgap power devices.

The IRF6811STRPBF-INF belongs to Infineon's DirectFET® Power MOSFET product line, engineered specifically for high-frequency, high-current DC-DC conversion in computing and communications infrastructure where thermal density and switching efficiency are primary design constraints.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

At T_C = 100 °C, the maximum continuous drain current is derated to 40 A per the Safe Operating Area curve (Fig 11), assuming adequate PCB copper area and thermal interface. This reflects thermal limitation-not silicon current handling-and assumes R_θJC = 3.9 °C/W and ambient cooling sufficient to maintain T_C ≤ 100 °C under steady-state load.

Is IRF6811STRPBF-INF compatible with lead-free reflow profiles?

Yes-the device is RoHS-compliant and qualified for standard lead-free reflow profiles with peak temperatures up to 260 °C (per JEDEC J-STD-020). The DirectFET® SQ package has been validated for vapor-phase, infrared, and convection soldering when manufacturing guidelines in Application Note AN-1035 are followed.

Does this MOSFET require a gate resistor for stability?

A gate resistor (typically 1–5 Ω) is recommended to dampen parasitic oscillation caused by PCB trace inductance interacting with low gate resistance (0.4 Ω) and high dV/dt. Without it, ringing on V_GS can cause false turn-on or increased switching loss-especially in high-di/dt multiphase VRMs.

Can IRF6811STRPBF-INF be used as a synchronous rectifier?

No-it is optimized as a control (high-side) FET, not a synchronous rectifier. Its body diode reverse recovery charge (Q_rr = 23–35 nC) and forward voltage (V_SD ≈ 0.7 V) are higher than dedicated sync-FETs; using it in low-side position would increase conduction and recovery losses versus purpose-built low-Q_rr devices.