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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF6892STR1PBF

Name: IRF6892STR1PBF
Brand: Infineon Technologies
SKU: IRF6892STR1PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF6892STR1PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric S3C

Datasheet:: IRF6892STR1PBF.pdf

Description:: MOSFET N-CH 25V 28A DIRECTFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF6892STR1PBF from Infineon Technologies is a 25 V, N-channel DirectFET® MOSFET with integrated Schottky diode, optimized for synchronous buck converter control FET applications. It delivers 1.3 mΩ R_DS(on) @ 10 V, 17 nC total gate charge, and ultra-low 0.7 mm profile for high-frequency DC-DC conversion in CPU core power delivery.

For engineers reviewing the IRF6892STR1PBF datasheet, IRF6892STR1PBF pinout, IRF6892STR1PBF application, or IRF6892STR1PBF equivalent, key selection criteria include low Q_rr (37–56 nC), dual-sided cooling capability, <0.4 Ω gate resistance, and compatibility with existing SO-8 footprint layouts for high-efficiency microprocessor power stages.

Technical Context

This MOSFET employs HEXFET® silicon in a copper-clad DirectFET package enabling top- and bottom-side thermal interface-reducing junction-to-ambient thermal resistance by up to 80% versus conventional packages. Its gate threshold voltage (1.8 V typ) and low 2.0 mΩ R_DS(on) @ 4.5 V support efficient operation in 3.3 V–5 V gate drive systems.

The integrated Schottky diode replaces the body diode in synchronous rectification, cutting reverse recovery charge (Q_rr) and eliminating associated switching losses. Gate charge partitioning (Q_gs2 = 2.3 nC, Q_gd = 6.0 nC) enables fast, controlled turn-on/turn-off with minimal Miller effect in high-dV/dt environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	25 V - Maximum drain-source blocking voltage for 12 V input rail designs with margin
R_DS(on) @ 10 V	1.3 mΩ - Enables ≤28 A continuous current with <1 W conduction loss at 25°C
Q_g Total	17 nC - Supports >1 MHz switching with low driver power demand
Q_rr	37–56 nC - Integrated Schottky diode reduces synchronous buck dead-time losses
R_θJA	12.5 °C/W - Achieved via dual-sided cooling on copper board, critical for compact VRMs
V_GS(th)	1.8 V typ - Ensures robust turn-on with 3.3 V logic-level gate drivers
C_iss	2510 pF - Low input capacitance minimizes gate drive energy and EMI generation

Pinout & Package

IRF6892STR1PBF uses the DirectFET® M2 package: low-profile (≤0.7 mm), copper substrate, top-side drain and bottom-side source/gate terminals. The package supports double-sided thermal interface and is footprint-compatible with SO-8 PCB layouts.

Pin/Terminal	Circuit Role	Design Meaning
Top Drain (D)	Power output node	Exposed copper pad on top surface-primary thermal path and high-current return
Bottom Source (S1/S2/S3)	Source reference / return path	Three parallel bottom terminals minimize source inductance and improve current sharing
Bottom Gate (G)	Control input	Single bottom terminal with low 0.4 Ω gate resistance for fast, stable switching

Key Features

Feature	Design Value
Integrated Schottky diode	Replaces parasitic body diode to eliminate Q_rr-related losses in synchronous rectification
Dual-sided cooling	Enables simultaneous thermal interface to heatsink (top) and PCB (bottom), reducing R_θJA by 80%
Ultra-low package inductance	Minimizes voltage overshoot and ringing during hard switching in high-di/dt buck converters
SO-8 footprint compatibility	Allows drop-in replacement in existing layouts without redesign-supports legacy assembly processes
100% R_G tested	Ensures consistent gate drive timing and predictable switching behavior across production lots

Applications

CPU Core Voltage Regulator

GPU Power Delivery

Use Scenario: High-current, multi-phase buck converter supplying 0.8–1.2 V to modern x86 or ARM processors under dynamic load transients.

IC Role / Device Role / Timing Role: Control FET switching at 500 kHz–2 MHz; handles peak currents ≥60 A per phase with minimal conduction loss.

Use Value: 1.3 mΩ R_DS(on) and low Q_g enable >95% efficiency at 30 A, while dual-sided cooling maintains T_J <105°C.

Use Scenario: Compact, high-density VRM powering discrete or integrated GPUs in gaming laptops and workstations.

IC Role / Device Role / Timing Role: High-side switch in interleaved buck topology; operates with 3.3 V gate drive and tight layout constraints.

Use Value: SO-8 footprint compatibility and 0.7 mm height allow stacking with inductors and capacitors in thin form factors.

Server DDR Memory Regulator

AI Accelerator Board Power

Use Scenario: Point-of-load regulator delivering 1.2 V/20 A to DDR4/DDR5 memory modules with strict ripple and transient response requirements.

IC Role / Device Role / Timing Role: Synchronous rectifier FET; commutates at 1 MHz with low Q_rr to suppress shoot-through risk.

Use Value: Integrated Schottky diode eliminates body diode reverse recovery, reducing output voltage dip by 12 mV during 10 A/μs load steps.

Use Scenario: Multi-rail power system for FPGA or ASIC-based AI inference accelerators requiring independent 0.75 V, 1.8 V, and 3.3 V supplies.

IC Role / Device Role / Timing Role: Primary control FET in 0.75 V buck stage; driven by digital PWM controller with adaptive dead-time control.

Use Value: 1.8 V V_GS(th) and 2.0 mΩ R_DS(on) @ 4.5 V ensure reliable turn-on using 5 V gate bias with margin for temperature drift.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-frequency power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF6662TRPbF	R_DS(on) = 1.6 mΩ @ 10 V; no integrated Schottky diode; higher Q_rr (72 nC)	Lacks Q_rr reduction benefit; requires external Schottky or careful dead-time tuning	Preferred where cost sensitivity outweighs Q_rr optimization and layout allows external diode placement
SiR626DP-T1-GE3	R_DS(on) = 1.4 mΩ @ 10 V; TrenchFET® package; R_θJA = 23 °C/W (single-sided only)	Higher thermal resistance limits power density; no dual-sided cooling capability	Selected when SO-8 compatibility is required but board-level thermal management favors top-side heatsinking only

Compared with IRF6662TRPbF and SiR626DP-T1-GE3, the IRF6892STR1PBF uniquely combines ultra-low R_DS(on), integrated Schottky diode, and dual-sided cooling-enabling higher power density and lower system-level losses in space-constrained, high-efficiency CPU/GPU VRMs.

Availability

IRF6892STR1PBF is available at Aetrix Electronics and suitable for CPU core voltage regulators, GPU power delivery modules, and AI accelerator board power supplies requiring stable component supply and long-term lifecycle support.

Supply support for IRF6892STR1PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The DirectFET® MOSFET product line targets high-frequency, high-efficiency DC-DC conversion-specifically engineered for server, computing, and graphics power delivery where thermal density and switching loss dominate design constraints.

FAQ

What is the maximum continuous drain current at 70°C ambient?

The IRF6892STR1PBF supports 22 A continuous drain current at T_A = 70°C with V_GS = 10 V, based on its thermal resistance (R_θJA = 12.5 °C/W) and 1.3 mΩ R_DS(on). This rating assumes double-sided cooling on a 1-inch square copper board with heatsink contact to the top drain pad.

Does the integrated Schottky diode replace the body diode entirely?

Yes-the Schottky diode is monolithically integrated and electrically placed in parallel with the MOSFET's intrinsic body diode. During reverse conduction, current flows preferentially through the Schottky path due to its lower forward voltage (≤0.75 V) and absence of minority-carrier storage, effectively eliminating body diode reverse recovery.

Can IRF6892STR1PBF be used in a 3.3 V gate drive configuration?

Yes-it has a typical V_GS(th) of 1.8 V and achieves 2.0 mΩ R_DS(on) at V_GS = 4.5 V, making it fully compatible with 3.3 V logic-level gate drivers. For optimal performance, ensure gate drive rise/fall times remain below 10 ns to exploit its low Q_g and Q_gd.

Is lead-free reflow compatible with the DirectFET® M2 package?

Yes-the IRF6892STR1PBF is RoHS-compliant and halogen-free, qualified for standard lead-free reflow profiles including vapor phase, infrared, and convection soldering. AN-1035 provides validated stencil design, substrate layout, and thermal pad recommendations for reliable assembly.

IRF6892STR1PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: DirectFET™ Isometric S3C

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 28A (Ta), 125A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 1.7mOhm @ 28A, 10V

Vgs(th) (Max) @ Id:: 2.1V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 25 nC @ 4.5 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 2510 pF @ 13 V

FET Feature:: -

Power Dissipation (Max):: 2.1W (Ta), 42W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DIRECTFET™ S3C

IRF6892STR1PBF FAQ

1.How can I place an order for IRF6892STR1PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF6892STR1PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF6892STR1PBF reliable?

The price and inventory of IRF6892STR1PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6892STR1PBF is usually 5 days.

3.What payment methods are accepted for IRF6892STR1PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6892STR1PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF6892STR1PBF?

IRF6892STR1PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF6892STR1PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF6892STR1PBF?

For technical support, including IRF6892STR1PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6892STR1PBF requirements.

6.How does Aetrix verify that IRF6892STR1PBF is sourced from the original manufacturer or authorized distributors?

All IRF6892STR1PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6892STR1PBF meets industry standards.

7.What is the process for return or replacement of IRF6892STR1PBF?

All IRF6892STR1PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF6892STR1PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF6892STR1PBF part is unused and in its original packaging.

Return procedure for IRF6892STR1PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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