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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7171MTRPBF

Name: IRF7171MTRPBF
Brand: Infineon Technologies
SKU: IRF7171MTRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7171MTRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric MN

Datasheet:: IRF7171MTRPBF.pdf

Description:: MOSFET N-CH 100V 15A DIRECTFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF7171MTRPBF from Infineon Technologies (formerly International Rectifier) is a 100 V, 93 A N-channel Power MOSFET in DirectFET® Medium (MN) package, optimized for high-frequency isolated DC-DC converter primary switches and synchronous rectification stages. It delivers 5.3 mΩ R_DS(on) at V_GS = 10 V, 36 nC total gate charge, and supports dual-sided cooling with <0.7 mm profile.

For engineers reviewing the IRF7171MTRPBF datasheet, IRF7171MTRPBF pinout, IRF7171MTRPBF application, or IRF7171MTRPBF equivalent, key selection criteria include low conduction loss in high-current SMPS topologies, high C_dv/dt immunity for noise-resilient operation, thermal performance under double-sided heatsinking, and compatibility with standard SMT reflow profiles up to 260°C.

Technical Context

This MOSFET integrates HEXFET® silicon with DirectFET® MN packaging to achieve sub-D2PAK footprint and ultra-low profile while maintaining robust avalanche capability (86 mJ single-pulse) and fast switching (t_d(on) = 9.3 ns, t_f = 20 ns). Its gate threshold voltage (2.0–3.6 V) and negative temperature coefficient of V_GS(th) (−6.2 mV/°C) support stable parallel operation.

The device features low output capacitance (C_oss = 970 pF @ V_DS = 50 V), high transconductance (g_fs = 80 S), and body diode with 66 ns reverse recovery time and 126 nC Q_rr, enabling efficient hard-switched and resonant converter designs without external anti-parallel diodes in many cases.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - Withstands primary-side voltage spikes in 48 V–60 V input isolated converters without breakdown.
R_DS(on)	5.3 mΩ @ V_GS = 10 V - Enables ≤0.3 W conduction loss at 56 A, critical for >95% efficiency targets.
Q_g	36 nC - Low gate drive energy reduces controller IC loading and enables high-frequency (>500 kHz) operation.
I_D (T_C = 25°C)	93 A - Supports high-power density designs with minimal paralleling in telecom and server PSU applications.
C_iss/C_oss	2160 pF / 970 pF @ V_DS = 50 V - Predictable capacitive behavior simplifies snubber design and EMI filtering.
T_J Range	−55°C to +150°C - Qualified for industrial ambient conditions and sustained high-temperature operation.

Pinout & Package

IRF7171MTRPBF uses the DirectFET® Medium (MN) package: top-side drain-connected metal can, bottom-side source/gate terminals exposed on PCB-facing surface. Package height <0.7 mm enables ultra-thin power modules and dual-sided thermal interface.

Pin/Terminal	Circuit Role	Design Meaning
Top Metal Can	Drain (D)	Primary high-side current path; electrically and thermally connected to heatsink via top-side mounting.
Bottom Left Pad	Gate (G)	Low-inductance gate connection; requires controlled trace routing to minimize ringing during switching.
Bottom Right Pad	Source (S)	Return path for load current; serves as reference for gate drive and enables Kelvin-source sensing.

Key Features

Feature	Design Value
DirectFET® MN Packaging	0.7 mm profile and D2PAK-shrunk footprint enable compact, low-inductance layouts with dual-sided cooling.
High C_dv/dt Immunity	Robust gate oxide withstands >50 V/ns transient stress-reduces false turn-on risk in high-dV/dt environments.
Synchronous Rectification Optimization	Low Q_rr (126 nC) and fast trr (66 ns) minimize body diode conduction loss and reverse recovery overshoot.
Industrial Temperature Qualification	Rated for continuous operation at T_C = 100°C (59 A ID) and full spec compliance over −55°C to +150°C junction range.
Lead-Free & Halogen-Free	RoHS-compliant construction qualified for 260°C lead-free reflow-supports automated manufacturing without process deviation.

Applications

Telecom DC-DC Converters

Server PSU Primary Switches

Use Scenario: 48 V input, 12 V/100 A output isolated forward or LLC converter in 1U rack-mount servers.

IC Role / Device Role / Timing Role: High-side primary switch operating at 300–600 kHz with zero-voltage switching (ZVS) assistance.

Use Value: 5.3 mΩ R_DS(on) and 36 nC Q_g reduce conduction + switching losses by ~18% vs. comparable D2PAK MOSFETs at same current density.

Use Scenario: 54 V input, 12 V/200 A multiphase VRM front-end stage with interleaved topology.

IC Role / Device Role / Timing Role: Primary-side switching element in each phase leg, driven by dedicated gate driver ICs.

Use Value: Dual-sided cooling compatibility allows direct attachment to both top heatsink and PCB copper pour, lowering θ_JA to 12.5°C/W under optimized layout.

Isolated Gate Driver Power Stages

Industrial Motor Drive Half-Bridges

Use Scenario: Auxiliary isolated bias supply (15 V/2 A) for SiC gate drivers in EV traction inverters.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in flyback converter delivering tightly regulated auxiliary rail.

Use Value: Body diode V_SD = 1.3 V @ 56 A and Q_rr = 126 nC allow efficient self-driven synchronous rectification without external control circuitry.

Use Scenario: 24–48 V BLDC motor drive for factory automation actuators requiring high torque at low speed.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration handling peak currents up to 330 A pulsed.

Use Value: 330 A I_DM rating and 1.2°C/W θ_JC ensure reliable operation during stall conditions without thermal runaway.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Vishay SiR626DP	R_DS(on) = 5.1 mΩ @ 10 V, but Q_g = 42 nC; slightly higher gate drive loss.	Same DirectFET® MN footprint; however, lower avalanche energy (65 mJ vs. 86 mJ) limits unclamped inductive robustness.	Select when gate drive margin is available and avalanche stress is minimal; verify layout thermal coupling for dual-sided cooling.
Infineon IRF7172MTRPBF	Identical package and silicon, but rated for 120 V V_DSS; R_DS(on) = 6.5 mΩ @ 10 V due to higher voltage design.	Used where input voltage derating or transient margin exceeds 100 V-e.g., 96 V battery systems with 20% overvoltage allowance.	Choose only if system-level V_DSS margin requirement exceeds 100 V; otherwise IRF7171MTRPBF offers superior R_DS(on)/Q_g trade-off.

Compared with SiR626DP, IRF7171MTRPBF provides better switching efficiency in high-frequency converters due to lower Q_g, while versus IRF7172MTRPBF it delivers 20% lower conduction loss at 100 V-class systems-making it optimal for cost-sensitive, high-efficiency 48–60 V isolated SMPS.

Availability

IRF7171MTRPBF is available at Aetrix Electronics and suitable for telecom DC-DC converters, server power supply primary switches, and industrial motor drive half-bridges requiring stable component supply, long-term lifecycle assurance, and consistent parametric performance across production lots.

Supply support for IRF7171MTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with deep expertise in silicon and wide-bandgap device innovation.

The IRF7171MTRPBF belongs to Infineon's DirectFET® Power MOSFET product line, engineered specifically for high-density, high-efficiency power conversion systems where thermal performance, switching speed, and package miniaturization are critical design constraints.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRF7171MTRPBF supports 59 A continuous drain current at T_C = 100°C with V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This rating assumes silicon-limited conduction and proper thermal management using the DirectFET® MN package's dual-sided cooling capability.

Does this MOSFET require a gate resistor for stability in hard-switched applications?

Yes-a gate resistor (typically 1.0–5.0 Ω) is recommended to dampen ringing caused by parasitic inductance between driver and gate terminal. The device's 1.0 Ω typical gate resistance and 36 nC Q_g make it sensitive to layout-induced oscillation; AN-1035 specifies layout guidelines for optimal gate loop inductance control.

Can the top metal can be used as both thermal and electrical connection to the drain?

Yes-the top metal can is electrically connected to the drain and designed for direct thermal interface to a heatsink. When mounted with thermally conductive paste or pad, it provides the primary thermal path (θ_JC = 1.2°C/W), enabling effective dual-sided cooling when combined with bottom-side PCB copper thermal vias.

Is the body diode suitable for synchronous rectification without external control?

No-the body diode is not intended for uncontrolled synchronous rectification. While its 66 ns t_rr and 126 nC Q_rr support efficient forced commutation, proper synchronous rectification requires precise gate timing control via external driver logic to avoid shoot-through and ensure zero-voltage turn-on.

IRF7171MTRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: FASTIRFET™, HEXFET®

Package/Case:: DirectFET™ Isometric MN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 15A (Ta), 93A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 6.5mOhm @ 56A, 10V

Vgs(th) (Max) @ Id:: 3.6V @ 150µA

Gate Charge (Qg) (Max) @ Vgs:: 54 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2160 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 2.8W (Ta), 104W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DIRECTFET™ MN

IRF7171MTRPBF FAQ

1.How can I place an order for IRF7171MTRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7171MTRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7171MTRPBF reliable?

The price and inventory of IRF7171MTRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7171MTRPBF is usually 5 days.

3.What payment methods are accepted for IRF7171MTRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7171MTRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7171MTRPBF?

IRF7171MTRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7171MTRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7171MTRPBF?

For technical support, including IRF7171MTRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7171MTRPBF requirements.

6.How does Aetrix verify that IRF7171MTRPBF is sourced from the original manufacturer or authorized distributors?

All IRF7171MTRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7171MTRPBF meets industry standards.

7.What is the process for return or replacement of IRF7171MTRPBF?

All IRF7171MTRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7171MTRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7171MTRPBF part is unused and in its original packaging.

Return procedure for IRF7171MTRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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