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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7201

Name: IRF7201
Brand: Infineon Technologies
SKU: IRF7201
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7201

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7201.pdf

Description:: MOSFET N-CH 30V 7.3A 8SO

Quantity:: RFQ Add To RFQ list

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Inventory:2,221

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Product details

Overview

IRF7201 from Infineon Technologies (formerly International Rectifier) is a 30 V, 7.3 A N-channel enhancement-mode MOSFET in SO-8 package, optimized for high-efficiency DC-DC conversion and load switching in space-constrained power supplies. It features 30 mΩ R_DS(on) at V_GS = 10 V, 19 nC total gate charge, and 5.0 V/ns di/dt-rated body diode recovery - enabling fast synchronous rectification in buck converters and hot-swap circuits.

For engineers reviewing the IRF7201 datasheet, IRF7201 pinout, IRF7201 application, or IRF7201 equivalent, key selection criteria include its SO-8 thermal performance (50 °C/W R_θJA), 70 mJ single-pulse avalanche energy rating, and validated 4.6 A continuous source current capability with integrated body diode.

Technical Context

The IRF7201 employs Fifth Generation HEXFET® silicon with ultra-low on-resistance per die area and enhanced leadframe for improved thermal conduction. Its gate threshold voltage (1.0–2.5 V) supports direct logic-level drive from 3.3 V and 5 V controllers, while the 100 pF Crss and 550 pF Ciss enable predictable switching behavior in high-frequency (>500 kHz) topologies.

Designed for surface-mount PCB assembly using vapor-phase, infrared, or wave soldering, the device integrates a robust p-n junction body diode with 48–73 ns trr and 1.2 V V_SD at 4.6 A, supporting bidirectional current handling in OR-ing and reverse-polarity protection applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V nominal input rails and transient overvoltage tolerance up to 30 V.
R_DS(on)	30 mΩ @ V_GS = 10 V - Enables ≤0.25 W conduction loss at 7.3 A, critical for thermally limited SO-8 board layouts.
Q_g	19 nC (typ) - Low gate charge reduces driver power demand and enables efficient operation with low-side gate drivers like IR2110 or TC4427.
I_D (25°C)	7.3 A continuous - Sustains full-load current in dual-MOSFET half-bridge configurations without derating below 70°C ambient.
E_AS	70 mJ - Withstands single-pulse inductive energy in motor gate-drive snubbers and relay coil suppression without failure.
dv/dt Rating	5.0 V/ns - Ensures immunity to false turn-on during high-speed switching in noisy industrial environments.
V_GS(th)	1.0–2.5 V - Compatible with 3.3 V microcontroller GPIOs for direct drive in low-voltage control stages.

Pinout & Package

IRF7201 uses the JEDEC MS-012AA SO-8 package with exposed drain pads for thermal enhancement. The package supports vapor-phase, infrared, and wave soldering and achieves >0.8 W power dissipation on standard FR-4 PCBs.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7	Drain (D)	Internally paralleled drain terminals - connected to internal MOSFET die and exposed thermal pad; primary current path for high-side or low-side switching.
8	Gate (G)	Control input - requires <19 nC charge to fully enhance; sensitive to ESD; must be driven with low-impedance source to minimize switching losses.
Source (S)	Source (S)	Common reference node for gate drive and load return; pins 1–7 are drains, so source is isolated to pin 8 only - critical for proper PCB layout grounding.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	30 mΩ @ 10 V - Reduces I²R losses by >40% vs. legacy SO-8 MOSFETs, enabling higher efficiency in 12–24 V input converters.
Enhanced SO-8 thermal design	50 °C/W R_θJA - Achieves 2.5 W power dissipation at T_C = 25°C, exceeding standard SO-8 limits via customized leadframe and multi-die layout.
Fast body diode recovery	48–73 ns trr - Minimizes reverse-recovery losses in synchronous rectifiers and prevents shoot-through in half-bridge dead-time management.
Logic-level gate drive	V_GS(th) ≤ 2.5 V - Eliminates need for level-shifting circuitry when interfacing with 3.3 V FPGAs or ARM Cortex-M microcontrollers.
Avalanche-rated	70 mJ E_AS - Allows safe operation in inductive load switching without external clamping diodes in telecom power modules.

Applications

DC-DC Buck Converter

Hot-Swap Controller

Use Scenario: Primary low-side switch in 24 V input, 5 V/10 A output synchronous buck regulator for industrial PLC I/O modules.

IC Role / Device Role / Timing Role: Low-side power switch with body diode conducting freewheeling current during high-side off-time; gate driven at 300–600 kHz.

Use Value: 30 mΩ R_DS(on) cuts conduction loss to 0.3 W at full load, reducing heatsink requirements and improving system efficiency to >92%.

Use Scenario: Inrush current limiter and fault-isolation switch in redundant 48 V backplane power distribution units.

IC Role / Device Role / Timing Role: Load-switch MOSFET controlled by dedicated hot-swap controller (e.g., LTC4215); operates in linear mode during startup.

Use Value: 7.3 A continuous rating and 58 A pulsed capability support 100 ms inrush surges; SO-8 footprint simplifies layout in dense backplane slots.

OR-ing Diode Replacement

Reverse Polarity Protection

Use Scenario: Active OR-ing element in dual 12 V supply redundancy for network routers with strict power-loss budget.

IC Role / Device Role / Timing Role: Back-to-back configured N-channel MOSFET (with external gate control) replacing Schottky diodes to reduce forward drop.

Use Value: 1.2 V V_SD and 4.6 A source current rating enable <0.05 V effective forward drop at 5 A - cutting diode heat by >85%.

Use Scenario: Input protection for 5 V USB-powered embedded sensors exposed to field wiring errors.

IC Role / Device Role / Timing Role: Low-side N-channel switch placed between ground and load; blocks reverse current when input polarity is inverted.

Use Value: 30 V V_DS withstands ±30 V miswiring; SO-8 package allows integration into compact sensor PCBs without discrete diode footprints.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si2302DS	R_DS(on) = 45 mΩ @ 4.5 V; Q_g = 5.5 nC; SO-8 package; lower voltage rating (20 V).	Optimized for 3.3 V logic-driven battery-powered loads; insufficient for 24 V rail transients.	Select only for sub-15 V systems where gate drive voltage is limited and peak current ≤3 A.
DMN3025LSD	R_DS(on) = 25 mΩ @ 10 V; Q_g = 22 nC; same SO-8 footprint; higher ID (9.5 A).	Higher gate charge increases driver loss; better suited for fixed 10 V gate drive with higher current demands.	Prefer when system uses dedicated 10 V gate bias and requires >7.3 A continuous current with margin.

Compared with Si2302DS and DMN3025LSD, the IRF7201 offers balanced trade-offs: lower Q_g than DMN3025LSD for faster switching with 3.3 V drivers, and higher V_DS rating than Si2302DS for industrial 24 V compatibility - making it optimal for mid-power DC-DC and hot-swap designs.

Availability

IRF7201 is available at Aetrix Electronics and suitable for DC-DC buck converters, hot-swap controllers, and OR-ing diode replacements requiring stable component supply across automotive infotainment power modules, industrial programmable logic controllers, and telecom base station auxiliary supplies.

Supply support for IRF7201 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The IRF7201 belongs to the HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-density power conversion in space-constrained applications such as point-of-load regulators and distributed power architectures.

FAQ

What is the maximum continuous drain current for IRF7201 at 70°C case temperature?

The IRF7201 supports 5.8 A continuous drain current at T_C = 70°C with V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the SO-8 package under sustained power dissipation and must be verified against actual PCB copper area and airflow conditions.

Can IRF7201 be used in a high-side switch configuration?

No - the IRF7201 is an N-channel MOSFET with no integrated charge pump or bootstrap circuitry. High-side operation requires gate voltage ≥ V_DS + V_GS(th), which exceeds typical supply rails. It is designed for low-side or synchronous rectifier use where source is grounded or tied to a known reference.

Does IRF7201 have avalanche capability, and how is it tested?

Yes - IRF7201 is rated for 70 mJ single-pulse avalanche energy (E_AS) under defined test conditions: V_DD = 15 V, starting T_J = 25°C, L = 6.6 mH, R_G = 25 Ω, and I_AS = 4.6 A (per Figure 8). This rating validates ruggedness against inductive switching stress in motor drives and relay coils.

Is the SO-8 package of IRF7201 RoHS-compliant and lead-free?

Yes - the IRF7201 SO-8 package conforms to RoHS Directive 2011/65/EU and is lead-free, with matte tin (Sn) plating on leads. The device is qualified for Pb-free reflow profiles including JEDEC J-STD-020D, supporting vapor-phase, infrared, and wave soldering processes.

IRF7201 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 7.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 30mOhm @ 7.3A, 10V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 28 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 550 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7201 FAQ

1.How can I place an order for IRF7201 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7201 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7201 reliable?

The price and inventory of IRF7201 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7201 is usually 5 days.

3.What payment methods are accepted for IRF7201?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7201 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7201?

IRF7201 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7201 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7201?

For technical support, including IRF7201 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7201 requirements.

6.How does Aetrix verify that IRF7201 is sourced from the original manufacturer or authorized distributors?

All IRF7201 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7201 meets industry standards.

7.What is the process for return or replacement of IRF7201?

All IRF7201 units undergo pre-shipment inspection (PSI). If there is an issue with IRF7201, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7201 part is unused and in its original packaging.

Return procedure for IRF7201:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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