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Infineon Technologies IRF7201PBF
- Part No.:
- IRF7201PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7201PBF.pdf
- Description:
- MOSFET N-CH 30V 7.3A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:9,639
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Product details
Overview
IRF7201PBF from Infineon Technologies is a 30 V, 7.3 A N-channel enhancement-mode power MOSFET in SO-8 package, featuring 30 mΩ RDS(on) at VGS = 10 V and 50 mΩ at VGS = 4.5 V, optimized for high-efficiency DC-DC converters and load switching in portable power management systems.
For engineers reviewing the IRF7201PBF datasheet, IRF7201PBF pinout, IRF7201PBF application, or IRF7201PBF equivalent, key selection criteria include its low gate charge (19–28 nC), fast switching (tr = 35 ns, tf = 19 ns), integrated body diode with 48–73 ns reverse recovery time, and thermal resistance of 50 °C/W (junction-to-ambient).
Technical Context
This Generation V HEXFET® MOSFET employs advanced silicon processing to achieve ultra-low on-resistance per die area while maintaining rugged avalanche capability (EAS = 70 mJ) and high dv/dt immunity (5.0 V/ns). Its SO-8 package uses a customized leadframe for improved thermal performance and multi-die compatibility.
The device operates across –55 °C to +150 °C junction temperature range, supports ±20 V gate drive, and delivers stable RDS(on) up to 125 °C (normalized to 1.5× room-temp value). Gate threshold voltage is tightly specified at 1.0 V (min), enabling reliable 3.3 V logic-level control in battery-powered systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage for 24 V rail applications with margin |
| RDS(on) @ 10 V | 0.030 Ω - Enables <100 mW conduction loss at 5.8 A continuous current |
| RDS(on) @ 4.5 V | 0.050 Ω - Supports direct 3.3 V microcontroller gate drive without level shift |
| Qg | 19–28 nC - Low total gate charge reduces driver power and switching losses |
| tr/tf | 35 ns / 19 ns - Fast edge rates enable >1 MHz synchronous buck operation |
| EAS | 70 mJ - Withstands single-pulse inductive energy without failure in motor/relay drives |
| θJA | 50 °C/W - Requires minimal copper area (1 in²) for 2.5 W dissipation at 25 °C ambient |
Pinout & Package
IRF7201PBF is housed in a standard SO-8 surface-mount package (JEDEC MS-012AA), with exposed drain pads on pins 1–4 and 6–7 for enhanced thermal conduction and current handling. The package supports vapor-phase, infrared, and wave soldering.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 6, 7 | Drain (D) | Parallel-connected high-current output terminals tied to internal die drains; share thermal path to PCB |
| 5 | Gate (G) | Control input requiring ≤28 nC charge; sensitive to ESD (±20 V rating) |
| 8 | Source (S) | Power return node and reference for gate drive; connects to internal body diode cathode |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 30 mΩ @ 10 V enables high-efficiency 5–12 V load switches with <0.5 W loss at 4 A |
| Logic-level compatible | 1.0 V VGS(th) min ensures turn-on with 3.3 V I/O, eliminating external level shifters |
| Fast switching speed | 54 ns total switching time (tr + tf) minimizes transition losses in SMPS above 500 kHz |
| Rugged body diode | 48–73 ns trr and 73–110 nC Qrr reduce shoot-through risk in synchronous rectification |
| Lead-free SO-8 | RoHS-compliant packaging qualified for consumer-grade reflow profiles and automated assembly |
Applications
| Battery Protection Circuit | USB Power Delivery Switch |
|---|---|
Use Scenario: Reverse-current blocking and overcurrent shutdown in Li-ion battery packs with 3.7–4.2 V nominal voltage. IC Role / Device Role: High-side load switch controlling discharge path; body diode blocks reverse charging. Use Value: 50 mΩ RDS(on) at 4.5 V gate drive limits voltage drop to <200 mV at 4 A, preserving battery runtime. | Use Scenario: Hot-swap and fault isolation in USB-C PD 3.0 power paths delivering up to 20 V / 5 A. IC Role / Device Role: Low-side OR-ing FET in dual-input power multiplexer with fast fault response. Use Value: 70 mJ avalanche rating withstands inductive kickback during hot-plug events without clamping diodes. |
| DC-DC Synchronous Buck Converter | LED Driver Load Switch |
Use Scenario: High-frequency (1–2 MHz) step-down regulator for FPGA core voltage (0.8–1.2 V) from 5 V or 12 V input. IC Role / Device Role: Synchronous rectifier (low-side switch) paired with high-side controller. Use Value: 35 ns rise time and 19 ns fall time minimize dead-time losses, improving efficiency by ≥1.5% at 1 MHz. | Use Scenario: Dimmable LED string control in automotive interior lighting with PWM dimming up to 20 kHz. IC Role / Device Role: PWM-controlled high-current switch driving 3–5 A LED loads from 12 V supply. Use Value: 58 A pulsed drain rating supports 10× peak current during PWM on-time without thermal derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si2302DS-T1-GE3 | RDS(on) = 0.055 Ω @ 4.5 V; Qg = 5.5 nC; SO-23 package | Lower gate charge but higher on-resistance and smaller thermal mass | Preferred for space-constrained 1–2 A loads where gate drive strength is limited |
| DMN3025LSD-13 | RDS(on) = 0.025 Ω @ 10 V; dual-N in SO-8; Qg = 22 nC | Dual configuration enables half-bridge or load-sharing; same footprint | Used when complementary high-side/low-side switching or redundancy is required |
Compared with Si2302DS-T1-GE3 and DMN3025LSD-13, IRF7201PBF offers the best balance of low RDS(on), moderate gate charge, and proven avalanche robustness in single-FET 5–7 A applications-making it ideal for cost-sensitive, thermally constrained DC-DC and battery-switching designs.
Availability
IRF7201PBF is available at Aetrix Electronics and suitable for battery protection circuits, USB power delivery switches, DC-DC synchronous buck converters, and LED driver load switches requiring stable component supply and long-term industrial availability.
Supply support for IRF7201PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.
The IRF7201PBF belongs to Infineon's Generation V HEXFET® power MOSFET product line, engineered specifically for high-efficiency, high-density power conversion in consumer and industrial portable equipment where thermal performance and logic-level drivability are critical.
FAQ
Is IRF7201PBF suitable for 3.3 V microcontroller gate drive?
Yes. With a gate threshold voltage minimum of 1.0 V and RDS(on) = 0.050 Ω at VGS = 4.5 V, IRF7201PBF fully enhances using standard 3.3 V GPIO outputs. Measured transfer characteristics confirm >4 A drain current at 3.3 V VGS, making it appropriate for direct logic-level switching without external drivers.
What is the maximum continuous current at 70°C case temperature?
The datasheet specifies 5.8 A continuous drain current at TC = 70°C and VGS = 10 V. This rating assumes proper PCB copper area (≥1 in²) and accounts for thermal derating of 0.02 W/°C beyond 25°C ambient, aligning with its 1.6 W power dissipation limit at that temperature.
Does IRF7201PBF include an integrated body diode?
Yes. It features a monolithic integral p-n junction body diode rated for 4.6 A continuous source current and 58 A pulsed source current. Forward voltage is 1.2 V at 4.6 A and 25°C, with reverse recovery time of 48–73 ns-critical for synchronous rectification and flyback snubbing.
Can IRF7201PBF be used in parallel configurations?
Yes. Its positive RDS(on) temperature coefficient (0.024 V/°C breakdown voltage drift, normalized RDS(on) increase with temperature) ensures inherent current sharing when multiple devices are paralleled. The SO-8 package's symmetric drain pin layout further supports balanced layout and thermal coupling in multi-die power stages.
IRF7201PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tube
- Product Status:
- Discontinued at Digi-Key
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 7.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 30mOhm @ 7.3A, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 28 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 550 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7201PBF FAQ
1.How can I place an order for IRF7201PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7201PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7201PBF reliable?
The price and inventory of IRF7201PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7201PBF is usually 5 days.
3.What payment methods are accepted for IRF7201PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7201PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7201PBF?
IRF7201PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7201PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7201PBF?
For technical support, including IRF7201PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7201PBF requirements.
6.How does Aetrix verify that IRF7201PBF is sourced from the original manufacturer or authorized distributors?
All IRF7201PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7201PBF meets industry standards.
7.What is the process for return or replacement of IRF7201PBF?
All IRF7201PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7201PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7201PBF part is unused and in its original packaging.
Return procedure for IRF7201PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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