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Infineon Technologies IRF7201TR
- Part No.:
- IRF7201TR
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7201TR.pdf
- Description:
- MOSFET N-CH 30V 7.3A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:9,641
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Product details
Overview
IRF7201TR from Infineon Technologies (formerly International Rectifier) is a 30 V, 7.3 A N-channel enhancement-mode MOSFET in SO-8 package, optimized for high-efficiency DC-DC conversion and load switching in portable power management. It features 30 mΩ RDS(on) at VGS = 10 V, 19 nC total gate charge, and 70 mJ single-pulse avalanche energy - enabling robust operation in synchronous buck converters and battery protection circuits.
For engineers reviewing the IRF7201TR datasheet, IRF7201TR pinout, IRF7201TR application, or IRF7201TR equivalent, key selection criteria include its SO-8 thermal performance (50 °C/W RθJA), fast switching (7 ns td(on), 19 ns tf), body diode recovery (48 ns trr), and ±20 V gate rating - critical for 3.3 V/5 V logic-level drive and high-frequency PWM control.
Technical Context
This fifth-generation HEXFET® device uses advanced silicon processing to achieve ultra-low on-resistance per die area while maintaining rugged avalanche capability and controlled dv/dt (5.0 V/ns). Its SO-8 package incorporates a customized leadframe for enhanced thermal conduction and multi-die compatibility.
The MOSFET operates with a 1.0 V gate threshold voltage and delivers 5.8 S forward transconductance at VDS = 15 V. Its dynamic parameters - including 550 pF Ciss, 260 pF Coss, and 100 pF Crss - support stable high-speed switching up to several hundred kHz in hard-switched topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage; defines safe operating range in 24 V bus and USB PD applications. |
| RDS(on) | 0.030 Ω @ VGS = 10 V - Enables <150 mW conduction loss at 7.3 A, critical for thermally constrained PCB layouts. |
| ID (25°C) | 7.3 A - Continuous drain current rating at low case temperature; supports high-current load switches without forced cooling. |
| Qg | 19 nC (typ) - Low gate charge reduces driver power and enables efficient operation with standard logic-level gate drivers. |
| tr/tf | 35 ns / 19 ns - Fast switching transitions minimize overlap losses in synchronous rectification and PWM stages. |
| EAS | 70 mJ - Single-pulse avalanche energy rating ensures reliability during inductive turn-off transients in motor drives. |
| VSD | 1.2 V @ IS = 4.6 A - Forward voltage of integrated body diode; impacts reverse recovery loss in freewheeling paths. |
Pinout & Package
IRF7201TR is housed in a surface-mount SO-8 package conforming to JEDEC MS-012AA outline, featuring a thermally enhanced leadframe optimized for PCB heat spreading. The package supports vapor phase, infrared, and wave soldering, with >0.8 W power dissipation achievable on standard FR-4 boards.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Drain (D) | Internally paralleled drain terminals - reduce package inductance and improve current sharing in high-frequency switching. |
| 5 | Gate (G) | Control input requiring ≤20 V absolute rating; 19 nC Qg demands careful driver sizing for <100 ns switching. |
| 6, 7, 8 | Source (S) | Common source connection for body diode and channel; multiple pins lower source inductance and improve EMI performance. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 0.030 Ω @ 10 V - Reduces conduction loss by >30% vs. prior-gen SO-8 MOSFETs at same current density. |
| Fast body diode recovery | trr = 48 ns (typ) - Minimizes reverse recovery charge (Qrr = 73 nC) in synchronous rectifier configurations. |
| High dv/dt immunity | 5.0 V/ns - Ensures reliable operation during rapid voltage transients without spurious turn-on in half-bridge legs. |
| Thermally enhanced SO-8 | RθJA = 50 °C/W - Achieves 2.5 W power dissipation at TC = 25°C, exceeding standard SO-8 limits by 2×. |
Applications
| DC-DC Synchronous Buck Converter | USB-C Power Delivery Switch |
|---|---|
Use Scenario: High-efficiency 5 V–12 V input to 3.3 V/5 V output conversion in compact power modules. IC Role / Device Role: High-side or low-side synchronous rectifier MOSFET paired with controller IC (e.g., MP2315). Use Value: 30 mΩ RDS(on) and 19 nC Qg enable >94% efficiency at 5 A load with minimal thermal derating. |
Use Scenario: Load switch controlling power delivery to downstream ports in USB-C PD sink designs. IC Role / Device Role: Logic-level-controlled pass transistor managing 3 A continuous current with overcurrent protection. Use Value: 1.0 V VGS(th) ensures full enhancement from 3.3 V GPIO; SO-8 footprint simplifies layout in space-constrained dongles. |
| Portable Battery Protection | Industrial PLC Digital Output |
Use Scenario: Reverse polarity and overcurrent protection in Li-ion battery packs for handheld instruments. IC Role / Device Role: Back-to-back configured N-channel MOSFET for bidirectional current blocking and discharge path control. Use Value: 70 mJ EAS withstands inductive kickback from protection IC fault responses without failure. |
Use Scenario: Solid-state replacement for electromechanical relays in 24 V DC digital output modules. IC Role / Device Role: High-side switch driving solenoids, indicators, or small actuators with programmable current limiting. Use Value: 5.8 A ID @ 70°C and 50 °C/W thermal resistance allow sustained 3 A loads without heatsinking in DIN-rail enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7850DP-T1-GE3 | RDS(on) = 0.025 Ω @ 10 V; Qg = 22 nC; SO-8 package; higher gate charge increases driver loss. | Better conduction loss but slower switching; preferred in low-frequency, high-current linear regulators. | Select when minimizing I²R loss dominates over switching loss - e.g., constant-current LED drivers. |
| DMN3020LSD-13 | RDS(on) = 0.032 Ω @ 10 V; Qg = 13 nC; dual-N SO-8; lower gate charge improves high-frequency efficiency. | Integrated dual configuration enables half-bridge or level-shifted gate drive; not suitable for single-device load switches. | Choose for compact half-bridge inverters or H-bridge motor drivers where layout density is critical. |
Compared with Si7850DP-T1-GE3 and DMN3020LSD-13, the IRF7201TR offers the best balance of low RDS(on), moderate Qg, and proven avalanche ruggedness - making it optimal for cost-sensitive, medium-frequency DC-DC and load switching where reliability under transient stress is essential.
Availability
IRF7201TR is available at Aetrix Electronics and suitable for DC-DC converters, USB-C power delivery systems, and industrial digital outputs requiring stable component supply and long-term manufacturability.
Supply support for IRF7201TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with core expertise in silicon and wide-bandgap devices.
The IRF7201TR belongs to the HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability switching in space-constrained power conversion and protection applications.
FAQ
Is IRF7201TR suitable for 3.3 V logic-level gate drive?
Yes - its 1.0 V gate threshold voltage ensures full enhancement at 3.3 V VGS, delivering RDS(on) ≈ 0.050 Ω at ID = 3.7 A. This makes it compatible with microcontroller GPIOs and low-voltage gate drivers without level-shifting circuitry.
What is the maximum continuous drain current at 70°C case temperature?
The datasheet specifies 5.8 A continuous drain current at TC = 70°C with VGS = 10 V. This reflects thermal derating due to reduced channel conductivity and increased RDS(on) at elevated junction temperatures.
Does IRF7201TR have an integrated Schottky body diode?
No - it uses a standard p-n junction body diode with VSD = 1.2 V at IS = 4.6 A and trr = 48 ns. While not a Schottky, its fast recovery and low Qrr (73 nC) make it suitable for synchronous rectification in non-critical freewheeling paths.
Can IRF7201TR be used in parallel configurations?
Yes - its positive temperature coefficient of RDS(on) (0.024 V/°C) enables inherent current sharing. The SO-8's paralleled drain and source pins further reduce package asymmetry, supporting stable multi-device operation in high-current load switches.
IRF7201TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 7.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 30mOhm @ 7.3A, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 28 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 550 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7201TR FAQ
1.How can I place an order for IRF7201TR through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7201TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7201TR reliable?
The price and inventory of IRF7201TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7201TR is usually 5 days.
3.What payment methods are accepted for IRF7201TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7201TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7201TR?
IRF7201TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7201TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7201TR?
For technical support, including IRF7201TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7201TR requirements.
6.How does Aetrix verify that IRF7201TR is sourced from the original manufacturer or authorized distributors?
All IRF7201TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7201TR meets industry standards.
7.What is the process for return or replacement of IRF7201TR?
All IRF7201TR units undergo pre-shipment inspection (PSI). If there is an issue with IRF7201TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7201TR part is unused and in its original packaging.
Return procedure for IRF7201TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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