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Infineon Technologies IRF7201TRPBF
- Part No.:
- IRF7201TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7201TRPBF.pdf
- Description:
- MOSFET N-CH 30V 7.3A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:2,522
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Product details
Overview
IRF7201TRPBF from Infineon Technologies is a 30 V, 7.3 A N-channel enhancement-mode MOSFET in SO-8 package with 30 mΩ RDS(on) at VGS = 10 V, 5.0 V/ns dv/dt rating, and 70 mJ single-pulse avalanche energy-designed for high-efficiency DC-DC converters, load switches, and motor drive half-bridges.
For engineers reviewing the IRF7201TRPBF datasheet, IRF7201TRPBF pinout, IRF7201TRPBF application, or IRF7201TRPBF equivalent, key selection criteria include its 30 V VDS, ultra-low on-resistance, fast switching (tr = 35 ns), thermal robustness (TJ = –55 to +150 °C), and SO-8 leadframe-enhanced thermal performance.
Technical Context
This Generation V HEXFET® power MOSFET features a planar silicon process optimized for low conduction loss and fast switching transients. Its body diode exhibits 48–73 ns reverse recovery time and 73–110 nC Qrr, enabling efficient synchronous rectification and freewheeling in buck converters.
The device supports gate drive at 4.5 V (RDS(on) = 50 mΩ) and 10 V (RDS(on) = 30 mΩ), with VGS(th) of 1.0–2.5 V and total gate charge of 19–28 nC-enabling compatibility with both 3.3 V and 5 V logic-level controllers while minimizing driver losses.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage for 24 V rail applications with margin against transients |
| RDS(on) @ VGS = 10 V | 30 mΩ - Enables ≤0.22 W conduction loss at 3 A continuous drain current |
| ID @ TC = 25°C | 7.3 A - Continuous current capability with heatsink-free operation on 1-in² copper PCB |
| Qg | 19–28 nC - Low gate charge reduces switching loss and eases gate driver selection |
| EAS | 70 mJ - Avalanche-rated for reliable operation under inductive turn-off stress |
| dv/dt Rating | 5.0 V/ns - Robust immunity to parasitic turn-on in high-speed hard-switched topologies |
| TJ Range | –55 to +150 °C - Qualified for industrial and automotive under-hood ambient conditions |
Pinout & Package
IRF7201TRPBF is housed in a thermally enhanced SO-8 package (JEDEC MS-012AA), featuring a customized leadframe for improved heat dissipation and multiple-die stacking capability. The package supports vapor phase, infrared, and wave soldering.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Drain (D) | Four parallel internal drain connections-low-inductance, high-current path to PCB copper pour |
| 5 | Gate (G) | Control terminal; requires <10 V drive for full enhancement; Miller capacitance (Crss = 100 pF) affects switching behavior |
| 6, 7, 8 | Source (S) | Three-source terminals tied to internal source metallization-minimizes source inductance for stable switching |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 30 mΩ @ 10 V enables >95% efficiency in 12 V input, 5 V/3 A buck converter at 500 kHz |
| Fast switching | tr = 35 ns / tf = 19 ns supports high-frequency operation with minimal dead-time loss |
| Enhanced thermal SO-8 | RθJA = 50 °C/W on 1-in² copper-supports >2.5 W dissipation without external heatsink |
| Robust body diode | Qrr = 73–110 nC and trr = 48–73 ns allow reliable synchronous rectification without external Schottky |
| Lead-free & RoHS-compliant | Pb-free plating and halogen-free mold compound meet IPC/JEDEC J-STD-020 reflow requirements |
Applications
| DC-DC Buck Converter | High-Side Load Switch |
|---|---|
Use Scenario: Step-down conversion from 24 V to 5 V/3 A in industrial PLC I/O modules. IC Role / Device Role: Synchronous high-side switch in integrated buck controller solution. Use Value: 30 mΩ RDS(on) limits conduction loss to 270 mW at full load, reducing thermal footprint by 40% vs. legacy SO-8 MOSFETs. |
Use Scenario: Hot-swap power sequencing for FPGA core rails in telecom baseband cards. IC Role / Device Role: High-side power switch with controlled inrush and fault protection. Use Value: 70 mJ EAS withstands 100 µs inductive kickback during hot-plug events without failure. |
| Brushed DC Motor Driver | USB-C Power Delivery Switch |
Use Scenario: Half-bridge H-bridge for 12 V, 2 A brushed motor in medical infusion pumps. IC Role / Device Role: Low-side switching element with fast freewheeling via integrated body diode. Use Value: 48–73 ns trr and low Qrr minimize shoot-through risk and reduce snubber losses. |
Use Scenario: 20 V/3 A power path switch in USB-C PD 3.0 sink designs. IC Role / Device Role: Logic-level controlled high-side switch enabling 3.3 V microcontroller direct drive. Use Value: VGS(th) = 1.0–2.5 V and RDS(on) = 50 mΩ @ 4.5 V ensure full enhancement with standard GPIO. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si2302DS-T1-GE3 | RDS(on) = 45 mΩ @ 4.5 V; lower ID (3.2 A); smaller SOT-23 package | Limited to <1.5 A continuous loads; unsuitable for 7.3 A peak or avalanche stress | Prefer for space-constrained, low-current logic-level switches where thermal margin is ample |
| DMN3025LSD-13 | RDS(on) = 25 mΩ @ 10 V; dual-N in SO-8; higher Qg (32 nC) | Requires stronger gate driver; better for dual-phase sync-buck but less efficient at light load | Choose when dual-MOSFET integration reduces board area and layout complexity outweighs gate drive overhead |
Compared with Si2302DS-T1-GE3 and DMN3025LSD-13, IRF7201TRPBF delivers optimal balance of low RDS(on), moderate gate charge, and proven avalanche ruggedness-making it preferred for single-device, medium-current, high-reliability power switches.
Availability
IRF7201TRPBF is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, and USB-C power delivery systems requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for IRF7201TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor leader specializing in power management, automotive MCUs, and sensor solutions, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q101.
IRF7201TRPBF belongs to Infineon's HEXFET® Generation V power MOSFET family-engineered for high-efficiency, high-density power conversion in industrial, computing, and consumer applications where thermal performance and reliability are critical.
FAQ
What is the maximum continuous drain current at 70°C case temperature?
The IRF7201TRPBF supports 5.8 A continuous drain current at TC = 70°C with VGS = 10 V, per the manufacturer's datasheet absolute maximum ratings table. This derating reflects thermal limits of the SO-8 package on standard FR-4 PCBs without forced airflow or heatsinking.
Can IRF7201TRPBF be driven directly by a 3.3 V microcontroller GPIO?
No-its VGS(th) minimum is 1.0 V, but full enhancement requires ≥4.5 V for acceptable RDS(on) (50 mΩ). At 3.3 V, RDS(on) exceeds 100 mΩ, causing excessive conduction loss. A level-shifting gate driver or 5 V buffer is required for reliable operation.
Does this MOSFET include an integrated ESD protection diode on the gate?
Yes-the IRF7201TRPBF incorporates gate oxide protection circuitry rated to ±20 V VGS and withstands single-pulse gate-to-source voltages up to 30 V (tp < 10 µs), per the datasheet's "VGSM" specification. This protects against handling and system-level ESD events.
Is the SO-8 package of IRF7201TRPBF compatible with standard JEDEC MS-012AA footprints?
Yes-the device uses the industry-standard SO-8 outline per JEDEC MS-012AA, with 1.27 mm pitch, 5.00 × 4.00 mm body, and 0.25 mm max mold protrusion. Footprint dimensions match common CAD libraries, and thermal pad clearance follows recommended land pattern guidelines in Infineon's packaging documentation.
IRF7201TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 7.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 30mOhm @ 7.3A, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 28 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 550 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7201TRPBF FAQ
1.How can I place an order for IRF7201TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7201TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7201TRPBF reliable?
The price and inventory of IRF7201TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7201TRPBF is usually 5 days.
3.What payment methods are accepted for IRF7201TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7201TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7201TRPBF?
IRF7201TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7201TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7201TRPBF?
For technical support, including IRF7201TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7201TRPBF requirements.
6.How does Aetrix verify that IRF7201TRPBF is sourced from the original manufacturer or authorized distributors?
All IRF7201TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7201TRPBF meets industry standards.
7.What is the process for return or replacement of IRF7201TRPBF?
All IRF7201TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7201TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7201TRPBF part is unused and in its original packaging.
Return procedure for IRF7201TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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