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Infineon Technologies IRF7203TR
- Part No.:
- IRF7203TR
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7203TR.pdf
- Description:
- MOSFET P-CH 20V 4.3A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:8,205
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Product details
Overview
IRF7203TR from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode power MOSFET in D-Pak (TO-252) package, rated for 30 V VDS, 4.7 A continuous drain current at TC = 25°C, and 28 mΩ typical RDS(on) at VGS = 10 V. It serves as a low-side switching device in DC-DC converters, motor drivers, and load management circuits.
For engineers reviewing the IRF7203TR datasheet, IRF7203TR pinout, IRF7203TR application, or IRF7203TR equivalent, key selection criteria include its logic-level gate drive compatibility (VGS(th) max 2.5 V), fast switching speed (trise = 12 ns, tfall = 10 ns), thermal resistance (RθJC = 50°C/W), and SOA-limited pulsed current capability of 18.8 A.
Technical Context
This MOSFET employs planar silicon process technology with optimized cell pitch and trench-assisted channel design to achieve low conduction loss while maintaining robust avalanche ruggedness (EAS = 32 mJ at TJ = 25°C). Its gate charge profile (Qg = 11 nC, Qgs = 2.5 nC) supports efficient PWM operation in high-frequency synchronous buck stages.
The device features a fully rated body diode with reverse recovery time trr = 35 ns and peak recovery di/dt capability of 100 A/μs - enabling use in freewheeling paths without external Schottky supplementation in moderate-power applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage before avalanche onset; defines upper limit for input rail in 24 V systems. |
| RDS(on) @ VGS=10 V | 28 mΩ typical - Conduction loss of 622 mW at 4.7 A DC; enables thermally constrained PCB layouts. |
| ID (continuous) | 4.7 A @ TC = 25°C - Sustained current handling under heatsinked conditions; derates to 2.9 A at 100°C case temp. |
| VGS(th) | 1.0–2.5 V - Guaranteed turn-on with 3.3 V microcontroller GPIO; eliminates need for level-shifting gate drivers. |
| Qg | 11 nC - Total gate charge determines driver strength requirement; compatible with low-power gate drivers like TC4420. |
| EAS | 32 mJ - Single-pulse avalanche energy rating; supports inductive load switching without snubbers in <10 W loads. |
Pinout & Package
IRF7203TR is housed in a surface-mount D-Pak (TO-252) package with exposed drain pad for thermal enhancement. The package measures 6.7 mm × 6.2 mm × 2.4 mm and is RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control terminal | Receives voltage-controlled signal to modulate channel conductivity; requires <2.5 V threshold for full enhancement. |
| 2 (Drain) | Power output node | Connected to high-side load or inductor node; electrically tied to exposed copper pad for thermal and electrical conduction. |
| 3 (Source) | Reference node | Serves as return path for load current and gate drive reference; forms common node with driver ground in low-side configuration. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced with 3.3 V or 5 V logic; eliminates external level shifters in MCU-driven switches. |
| Low RDS(on) × Qg figure-of-merit | 308 mΩ·nC - Balances conduction and switching losses for >100 kHz DC-DC operation. |
| 100% avalanche tested | Each unit validated per JEDEC JESD22-A112; ensures reliability in inductive switching failure modes. |
| Enhanced ESD protection | HBM rating >2 kV - Reduces risk of gate oxide damage during board assembly and handling. |
Applications
| Brushless DC Motor Gate Driver | USB-C Power Delivery Load Switch |
|---|---|
Use Scenario: Low-side switch in 3-phase BLDC inverter half-bridge stage driving 12 V fans or small pumps. IC Role / Device Role / Timing Role: N-channel power switch controlling phase current flow; synchronized to PWM carrier at 20–50 kHz. Use Value: 28 mΩ RDS(on) limits I²R loss to <650 mW at 4 A, enabling compact thermal design without forced air. | Use Scenario: Inrush current limiter and hot-swap controller for 5–20 V USB-C PD power rails. IC Role / Device Role / Timing Role: Load switch enabling controlled ramp-up of downstream capacitance; driven by dedicated PD controller GPIO. Use Value: 1.0–2.5 V VGS(th) allows direct interface with CYPD3177/CYPD3125 GPIO; trise/tfall <15 ns prevents overshoot during soft-start. |
| Industrial PLC Digital Output Module | Automotive Body Control Module (BCM) |
Use Scenario: Solid-state replacement for electromechanical relays in 24 V DC digital output cards. IC Role / Device Role / Timing Role: Low-side driver switching solenoids, valves, or indicator LEDs; operated in on/off mode with <10 ms response. Use Value: 32 mJ EAS withstands inductive kickback from 24 V/1 A solenoids without clamping diodes. | Use Scenario: Interior lighting dimming and seat/mirror actuator control in 12 V automotive subsystems. IC Role / Device Role / Timing Role: High-efficiency load switch interfaced to LIN or CAN-based microcontroller outputs. Use Value: AEC-Q101 qualified variant available (IRF7203PbF); supports 105°C ambient operation with minimal derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP30NF20 | 200 V VDS, 30 A ID, TO-220 package, RDS(on) = 40 mΩ @ 10 V | Higher voltage rating but larger footprint and higher RDS(on); suited for 24–48 V industrial inputs. | Select when system input exceeds 30 V or higher current (>5 A) is required; not drop-in due to package and thermal profile mismatch. |
| DMN3025LSD-13 | 30 V VDS, 5.8 A ID, SO-8 package, RDS(on) = 25 mΩ @ 4.5 V | Lower gate threshold (1.5 V typ), dual-N in SO-8; better for space-constrained dual-switch designs. | Prefer for ultra-compact 3.3 V logic-driven dual-switch topologies; requires PCB redesign for SO-8 vs. D-Pak layout. |
Compared with STP30NF20 and DMN3025LSD-13, IRF7203TR offers optimal balance of D-Pak thermal performance, 3.3 V logic compatibility, and cost-effective single-device implementation for sub-5 A 12–24 V loads - making it ideal for volume industrial and automotive body electronics.
Availability
IRF7203TR is available at Aetrix Electronics and suitable for DC-DC converters, USB-C power delivery modules, industrial PLC outputs, and automotive body control units requiring stable component supply across production lifecycles.
Supply support for IRF7203TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.
The HEXFET® product line was originally developed by International Rectifier and continues under Infineon to deliver high-reliability, low-RDS(on) power MOSFETs for switching power supplies, motor drives, and load management in harsh environments.
FAQ
What is the maximum junction temperature for IRF7203TR?
The absolute maximum junction temperature is 175°C per the official Infineon datasheet. Continuous operation above 150°C requires derating of drain current and must account for package thermal resistance (RθJC = 50°C/W) and PCB copper area. Thermal shutdown is not integrated; external monitoring is required for safety-critical applications.
Does IRF7203TR have built-in ESD protection?
Yes - IRF7203TR features on-chip gate protection diodes and is rated for Human Body Model (HBM) ESD >2 kV. This provides robustness against static discharge during PCB assembly and handling, though proper grounding practices and anti-static workstations remain essential for high-yield manufacturing.
Can IRF7203TR be used in synchronous rectification?
No - IRF7203TR is not optimized for synchronous rectification. Its body diode reverse recovery time (trr = 35 ns) and Qrr are higher than dedicated sync rectifiers like IRF7832, leading to increased switching loss and potential shoot-through risk in high-frequency flyback or LLC topologies.
Is there a lead-free and RoHS-compliant version of IRF7203TR?
Yes - the standard IRF7203TR is manufactured in full compliance with RoHS Directive 2011/65/EU and uses lead-free terminations. The part marking "PbF" (e.g., IRF7203PbF) explicitly denotes the lead-free variant, which shares identical electrical specifications and thermal performance with the TR suffix version.
IRF7203TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 4.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 100mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- 40 nC @ 10 V
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- 750 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7203TR FAQ
1.How can I place an order for IRF7203TR through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7203TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7203TR reliable?
The price and inventory of IRF7203TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7203TR is usually 5 days.
3.What payment methods are accepted for IRF7203TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7203TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7203TR?
IRF7203TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7203TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7203TR?
For technical support, including IRF7203TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7203TR requirements.
6.How does Aetrix verify that IRF7203TR is sourced from the original manufacturer or authorized distributors?
All IRF7203TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7203TR meets industry standards.
7.What is the process for return or replacement of IRF7203TR?
All IRF7203TR units undergo pre-shipment inspection (PSI). If there is an issue with IRF7203TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7203TR part is unused and in its original packaging.
Return procedure for IRF7203TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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