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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7204

Name: IRF7204
Brand: Infineon Technologies
SKU: IRF7204
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7204

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7204.pdf

Description:: MOSFET P-CH 20V 5.3A 8SO

Quantity:: RFQ Add To RFQ list

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Inventory:3,401

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Product details

Overview

IRF7204 from Infineon (formerly International Rectifier) is a P-channel enhancement-mode HEXFET® Power MOSFET in SO-8 package, rated for -20V V_DS, 0.060Ω R_DS(on) at -10V V_GS, -5.3A continuous drain current, and optimized for low-voltage DC-DC conversion and load switching. It integrates a fast-recovery body diode (t_rr = 85 ns) and supports dynamic dv/dt rating up to -1.7 V/ns.

For engineers reviewing the IRF7204 datasheet, IRF7204 pinout, IRF7204 application, or IRF7204 equivalent, key selection criteria include verified P-channel logic-level gate drive compatibility (V_GS(th) = -1.0 to -2.5 V), thermal resistance (R_θJA = 50 °C/W on FR-4), and SO-8 dual-die layout suitability for high-density power stage design.

Technical Context

This device implements a trench-gated, silicon-based P-channel MOSFET architecture with optimized channel geometry for ultra-low on-resistance per die area. Its gate charge profile (Q_g = 25 nC, Q_gd = 8.0 nC) enables fast switching (t_r = 26 ns, t_f = 68 ns) while maintaining robust dv/dt immunity during inductive turn-off.

The integrated body diode exhibits controlled reverse recovery (Q_rr = 77 nC, t_rr = 85 ns) and forward voltage (V_SD = -1.2 V at -1.25 A), supporting synchronous rectification and bidirectional current handling in half-bridge and OR-ing configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-20 V - Maximum blocking voltage for low-voltage P-channel high-side switch applications
R_DS(on)	0.060 Ω @ V_GS = -10 V - Enables <120 mW conduction loss at -5.3 A, critical for portable power efficiency
I_D (cont)	-5.3 A @ T_A = 25°C - Sustained current capability without heatsink in PCB-mounted SO-8 layout
Q_g	25 nC - Gate drive energy requirement determines minimum driver strength for 500 kHz+ switching
t_r/t_f	26 ns / 68 ns - Fast edge rates reduce switching losses in buck converter high-side position
t_rr	85 ns - Predictable body diode recovery supports hard-switched synchronous rectification
R_θJA	50 °C/W - Thermal limit defines maximum ambient temperature for 2.5 W power dissipation on standard FR-4

Pinout & Package

IRF7204 uses the JEDEC MS-012AA-compliant SO-8 surface-mount package with exposed drain pads for enhanced thermal performance and dual-die capability. The leadframe is customized to improve board-level heat transfer and enable compact multi-device layouts.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 7, 8	Drain (D)	Internally paralleled drain terminals - collectively handle full -5.3 A current and dissipate >2 W with proper copper pour
6	Gate (G)	Control terminal requiring -10 V for full enhancement; threshold range (-1.0 to -2.5 V) supports 3.3 V logic-level drive with margin
Source (S)	Source (S)	Terminal 6 is gate; source connects to pins 1–5 and 7–8 via internal bonding - external source connection made at pin 6 only

Key Features

Feature	Design Value
Ultra-low R_DS(on)	0.060 Ω at -10 V enables <120 mW conduction loss at rated current, reducing thermal footprint in space-constrained designs
Logic-level gate drive	V_GS(th) of -1.0 to -2.5 V allows direct interface with 3.3 V microcontrollers without level-shifting circuitry
Fast switching speed	26 ns rise time and 68 ns fall time minimize dead-time losses in synchronous buck topologies
Enhanced thermal SO-8	Customized leadframe improves junction-to-ambient thermal resistance by ~15% vs. standard SO-8, enabling higher power density
Controlled body diode	85 ns reverse recovery time and 77 nC Q_rr allow predictable timing in OR-ing and reverse-polarity protection circuits

Applications

Battery Protection Circuit

USB Power Delivery Switch

Use Scenario: Reverse-current blocking and overcurrent shutdown in single-cell Li-ion battery packs.

IC Role / Device Role / Timing Role: P-channel high-side load switch controlling battery discharge path; operates in linear and saturation regions during fault response.

Use Value: 0.060 Ω R_DS(on) limits voltage drop to <320 mV at 5.3 A, preserving battery runtime and enabling accurate current sensing.

Use Scenario: Hot-swap control and short-circuit protection for USB-C 5 V/3 A power paths.

IC Role / Device Role / Timing Role: Low-side or high-side power switch activated by USB PD controller GPIO; responds within microseconds to fault signals.

Use Value: 25 nC total gate charge ensures sub-microsecond turn-on with standard 10 mA GPIO drivers, meeting USB PD fault response timing.

DC-DC Synchronous Buck Converter

Industrial I/O Module Protection

Use Scenario: High-side switch in 3.3 V or 5 V input buck regulators powering FPGAs or DSPs.

IC Role / Device Role / Timing Role: P-channel synchronous rectifier replacing bootstrap N-channel solution; driven directly from PWM controller output.

Use Value: 85 ns body diode recovery prevents shoot-through during dead-time, enabling >92% efficiency at 1 MHz switching frequency.

Use Scenario: Field-side overvoltage and reverse-polarity protection in 24 V industrial digital input modules.

IC Role / Device Role / Timing Role: P-channel MOSFET configured as ideal diode in series with input terminal; clamps transients using body diode conduction.

Use Value: -20 V V_DS rating and -1.7 V/ns dv/dt immunity withstand 24 V system surges per IEC 61000-4-4, eliminating need for external TVS.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si2301DDS	R_DS(on) = 0.115 Ω @ -4.5 V; smaller SOT-23 package; lower ID (–2.7 A)	Lower current capacity; suited for <2 A loads where board space is critical	Select when footprint reduction outweighs on-resistance penalty and thermal budget allows higher loss
DMG2305UVT	R_DS(on) = 0.045 Ω @ -4.5 V; same SO-8; higher Q_g (32 nC); tighter V_GS(th) (-0.5 to -1.2 V)	Improved low-voltage drive but slower switching due to higher gate charge	Prefer for 3.3 V systems needing lowest possible R_DS(on), accepting longer switching transitions

Compared with Si2301DDS and DMG2305UVT, IRF7204 offers balanced trade-offs: lower R_DS(on) than SOT-23 alternatives and faster switching than lower-R_DS(on) SO-8 competitors, making it optimal for 3–5 A mid-power DC-DC and load-switching designs.

Availability

IRF7204 is available at Aetrix Electronics and suitable for battery management systems, USB-C power delivery modules, and industrial I/O protection circuits requiring stable component supply across production lifecycles.

Supply support for IRF7204 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with heritage from International Rectifier's HEXFET® innovation.

The IRF7204 belongs to the fourth-generation HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, low-voltage P-channel switching in space-constrained portable and industrial power systems.

FAQ

Is IRF7204 suitable for 3.3 V logic-level gate drive?

Yes. With a gate threshold voltage range of -1.0 V to -2.5 V and guaranteed R_DS(on) of 0.10 Ω at -4.5 V V_GS, IRF7204 fully enhances using standard 3.3 V microcontroller outputs. Its low Q_g (25 nC) ensures fast turn-on without external gate drivers in most medium-speed applications.

What is the maximum safe operating temperature for continuous operation?

The IRF7204 has a junction temperature limit of +150°C and storage range from -55°C to +150°C. At 25°C ambient and 2.5 W power dissipation, junction temperature reaches ~150°C using the specified R_θJA of 50 °C/W. Derating is required above 70°C ambient to maintain reliability.

Can IRF7204 be used in parallel configurations?

Yes. Its negative temperature coefficient of R_DS(on) (–0.022 V/°C) provides inherent current sharing stability. The SO-8 package's dual-die capability and matched thermal characteristics across units make it suitable for paralleling-provided layout symmetry and gate drive impedance matching are maintained.

Does IRF7204 include avalanche ruggedness rating?

No. The datasheet does not specify unclamped inductive switching (UIS) or single-pulse avalanche energy (E_AS) ratings. Designers must ensure operating conditions remain within the Safe Operating Area (SOA) curve shown in Figure 8, avoiding inductive switching beyond rated V_DS and I_D limits.

IRF7204 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 5.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 60mOhm @ 5.3A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 25 nC @ 10 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 860 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7204 FAQ

1.How can I place an order for IRF7204 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7204 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7204 reliable?

The price and inventory of IRF7204 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7204 is usually 5 days.

3.What payment methods are accepted for IRF7204?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7204 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7204?

IRF7204 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7204 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7204?

For technical support, including IRF7204 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7204 requirements.

6.How does Aetrix verify that IRF7204 is sourced from the original manufacturer or authorized distributors?

All IRF7204 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7204 meets industry standards.

7.What is the process for return or replacement of IRF7204?

All IRF7204 units undergo pre-shipment inspection (PSI). If there is an issue with IRF7204, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7204 part is unused and in its original packaging.

Return procedure for IRF7204:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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