Infineon Technologies IRF7204PBF

Overview

IRF7204PBF from Infineon Technologies (formerly International Rectifier) is a dual N-channel enhancement-mode MOSFET in a single SO-8 package, configured as two independent 0.052 Ω (R_DS(on) @ V_GS = 10 V) power switches rated for 40 V drain-source voltage and 8.3 A continuous drain current per channel. It serves as a synchronous rectifier or load switch in DC-DC converters and motor drive half-bridges.

For engineers reviewing the IRF7204PBF datasheet, IRF7204PBF pinout, IRF7204PBF application, or IRF7204PBF equivalent, key selection criteria include dual-channel R_DS(on) matching, SO-8 thermal performance, body diode recovery characteristics (t_rr = 55 ns), and gate charge (Q_G = 22 nC) for high-frequency switching efficiency.

Technical Context

This device integrates two discrete N-channel MOSFETs sharing a common source terminal (pins 4 and 5), enabling complementary half-bridge operation without external interconnects. Each channel supports 40 V V_DS, 8.3 A I_D, and exhibits matched R_DS(on) of 0.052 Ω at 10 V gate drive with 1.8 V threshold voltage.

Thermal design leverages the SO-8 package's 62 °C/W junction-to-ambient thermal resistance (R_θJA) and 1.2 W power dissipation rating. The integrated body diodes feature reverse recovery time t_rr = 55 ns and Q_rr = 30 nC, critical for minimizing switching loss in synchronous buck topologies.

Key Specifications

Pinout & Package

SO-8 surface-mount package (JEDEC MS-012AA), 4.9 × 6.0 mm footprint, 1.27 mm lead pitch, with exposed thermal pad (pin 4/5 shared source) for enhanced heat transfer.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Compared with Si7852DP-T1-GE3 and DMN3026LSD-13, the IRF7204PBF offers optimal balance of 40 V rating, thermal pad integration, and 55 ns body diode recovery-making it preferred for industrial 24 V buck converters where voltage margin and thermal reliability outweigh marginal R_DS(on) gains.

Availability

IRF7204PBF is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, and hot-swap controllers requiring stable component supply and JEDEC-standard SO-8 compatibility.

Supply support for IRF7204PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive microcontrollers, and industrial gate drivers, with core expertise in silicon and wide-bandgap power devices.

The IRF7204PBF belongs to Infineon's HEXFET® family, engineered for high-efficiency, high-reliability power conversion in space-constrained industrial and computing applications.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The absolute maximum junction temperature (T_J) is 150 °C. Continuous operation must maintain T_J ≤ 150 °C under worst-case ambient and power dissipation conditions, verified using R_θJA = 62 °C/W and measured board-level thermal resistance. Derating curves in the datasheet define safe I_D limits above 25 °C case temperature.

Can IRF7204PBF be used in parallel configurations across multiple SO-8 packages?

No-parallel operation is not recommended. The device lacks built-in current-sharing features, and parametric mismatch (e.g., ±20% R_DS(on) tolerance, V_GS(th) spread of 1.2–2.4 V) causes uneven current distribution. For higher current, use a single larger-package MOSFET or a dedicated multi-phase controller.

Is the body diode suitable for reverse polarity protection?

Yes-the intrinsic body diode supports reverse polarity protection when the device is placed in series with V_IN, provided forward current remains within I_S = 8.3 A and pulse energy stays below 0.15 mJ (per datasheet SOA). However, its 1.2 V forward drop at 8 A increases power loss versus dedicated protection ICs.

Does the SO-8 package require solder paste stencil adjustments for the exposed thermal pad?

Yes-JEDEC MS-012AA specifies a 3.8 × 4.8 mm thermal pad (pins 4/5). A 0.15 mm thick stencil with 50% aperture ratio (1.9 × 2.4 mm opening) is recommended to ensure void-free solder joint formation and optimal thermal transfer to the PCB ground plane.