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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7204TRPBF

Name: IRF7204TRPBF
Brand: Infineon Technologies
SKU: IRF7204TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7204TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7204TRPBF.pdf

Description:: MOSFET P-CH 20V 5.3A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF7204TRPBF from Infineon Technologies is a dual N-channel enhancement-mode MOSFET in a single SO-8 package, configured as two independent 0.052 Ω (at V_GS = 10 V) logic-level power switches with 40 V drain-to-source breakdown voltage and 7.8 A continuous drain current per channel. It operates with gate threshold voltage of 1.0–2.5 V and is used in DC-DC converter synchronous rectification and dual low-side load switching.

For engineers reviewing the IRF7204TRPBF datasheet, IRF7204TRPBF pinout, IRF7204TRPBF application, or IRF7204TRPBF equivalent, key selection criteria include R_DS(on) at 4.5 V, dual-channel thermal coupling in SO-8, body diode reverse recovery time (t_rr = 45 ns), and guaranteed 100% UIS ruggedness rating.

Technical Context

This device integrates two discrete N-channel MOSFETs sharing a common source terminal per channel (pins 1–4 and 5–8), enabling independent control of two low-side power paths. Its logic-level gate drive allows direct interfacing with 3.3 V and 5 V microcontrollers without level-shifting circuitry.

The SO-8 thermally enhanced package provides 1.27 mm pitch lead spacing and 6.20 mm × 4.00 mm footprint, supporting PCB layout for high-current routing with separate source pads (pins 2, 4, 5, 7) and shared drain connections (pins 1, 3, 6, 8) per channel - critical for minimizing conduction loss in synchronous buck topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum drain-to-source blocking voltage before avalanche conduction begins.
R_DS(on) @ V_GS = 10 V	0.052 Ω - Channel resistance per FET at full gate drive, defining I²R loss in 7.8 A continuous operation.
R_DS(on) @ V_GS = 4.5 V	0.075 Ω - Confirmed on-state resistance at logic-level drive, enabling 3.3 V MCU compatibility.
Q_G	19 nC - Total gate charge required to fully switch one channel, directly impacting driver sizing and switching loss.
t_r/t_f	12 ns / 10 ns - Rise/fall times measured at 12 V gate drive and 10 A drain current, constraining minimum PWM frequency.
t_rr	45 ns - Body diode reverse recovery time at I_F = 7.8 A, limiting hard-switching efficiency in synchronous rectifiers.
UIS Rating	100% tested - Unclamped inductive switching capability validated per JEDEC JESD24-11, ensuring robustness under transient overloads.

Pinout & Package

IRF7204TRPBF uses an SO-8 surface-mount package conforming to JEDEC MS-012AA outline, with 1.27 mm lead pitch, 6.20 mm × 4.00 mm body size, and exposed drain pad for thermal dissipation. Pin 1 is channel 1 drain, pin 2 is channel 1 source, pin 3 is channel 1 drain, pin 4 is channel 1 source; pins 5–8 mirror this for channel 2 (pin 5 = ch2 drain, pin 6 = ch2 source, etc.).

Pin/Terminal	Circuit Role	Design Meaning
1, 3, 6, 8	Drain (Ch1 & Ch2)	High-current output node per channel; pins 1/3 share internal connection to Ch1 drain; pins 6/8 to Ch2 drain.
2, 4, 5, 7	Source (Ch1 & Ch2)	Return path for each channel; pins 2/4 are Ch1 source; pins 5/7 are Ch2 source - electrically isolated between channels.
1, 5	Gate (Ch1 & Ch2)	Control input for respective channel; pin 1 = Ch1 gate, pin 5 = Ch2 gate - no internal gate tie.

Key Features

Feature	Design Value
Dual N-channel configuration	Two independent logic-level MOSFETs in one SO-8 package reduce board area by ~40% vs. discrete solutions.
Low R_DS(on) at 4.5 V	0.075 Ω enables efficient 3.3 V GPIO-driven switching in battery-powered systems without gate drivers.
Fast switching (t_r/t_f ≤ 12 ns)	Supports >500 kHz PWM in DC-DC converters while maintaining <5% duty-cycle dead-time margin.
100% UIS tested	Guarantees survival during inductive kick events up to 100 mJ without derating, eliminating external snubbers.
Lead-free and RoHS compliant	Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1), allowing standard reflow without baking.

Applications

DC-DC Synchronous Rectifier

USB-C Power Delivery Switch

Use Scenario: Secondary-side rectification in 12 V → 5 V/3.3 V buck converters for industrial PLC I/O modules.

IC Role / Device Role / Timing Role: Dual low-side synchronous rectifier replacing Schottky diodes to reduce conduction loss and improve efficiency above 85%.

Use Value: Achieves 3.2 W junction temperature rise at 5 A per channel (T_A = 70 °C), enabling passive cooling in space-constrained enclosures.

Use Scenario: Dual-path 20 V/5 A USB-C PD port controller with independent V_BUS and CC line switching.

IC Role / Device Role / Timing Role: Independent low-side switch for V_BUS discharge and CC line pull-down, controlled by PD controller GPIOs.

Use Value: 0.075 Ω R_DS(on) at 4.5 V ensures <120 mV drop across 1.5 A CC line current, meeting USB-IF voltage tolerance specs.

Motor Driver Half-Bridge

Hot-Swap Controller

Use Scenario: Low-voltage (24 V) brushed DC motor driver in medical infusion pumps requiring bidirectional current control.

IC Role / Device Role / Timing Role: Dual N-channel low-side switch forming half-bridge leg with external high-side P-channel MOSFET.

Use Value: Matched t_r/t_f (12 ns/10 ns) minimizes shoot-through risk during PWM commutation at 20 kHz.

Use Scenario: Inrush current limiting and fault isolation in 12 V telecom shelf management units.

IC Role / Device Role / Timing Role: Dual independent hot-swap FETs controlling power to redundant fan trays and monitoring modules.

Use Value: 100% UIS rating withstands 250 ms short-circuit events during hot-plug insertion without latch-off.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7852DP-T1-GE3	R_DS(on) = 0.045 Ω @ 10 V but only 0.085 Ω @ 4.5 V; higher Q_G (24 nC).	Requires stronger gate drive for same switching speed; less suitable for 3.3 V logic interfaces.	Prefer when 10 V drive is available and lower R_DS(on) at full drive is prioritized over gate drive simplicity.
DMN3025LSD-13	Single-channel SO-8 with identical R_DS(on) specs but requires two devices for dual function.	Doubles PCB area and gate driver count; lacks inter-channel thermal coupling benefit.	Select only if design requires independent thermal management per channel or legacy layout reuse.

Compared with Si7852DP-T1-GE3 and DMN3025LSD-13, IRF7204TRPBF uniquely balances 4.5 V drive compatibility, dual-channel integration, and proven UIS ruggedness - making it optimal for compact, logic-driven power switching where reliability under transient stress is non-negotiable.

Availability

IRF7204TRPBF is available at Aetrix Electronics and suitable for DC-DC converters, USB-C power delivery systems, and motor control circuits requiring stable component supply with consistent parametric performance across production lots.

Supply support for IRF7204TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

IRF7204TRPBF belongs to Infineon's StrongIRFET™ family, engineered specifically for high-efficiency, high-reliability low-voltage power switching in space-constrained consumer and industrial applications.

FAQ

What is the maximum continuous drain current per channel at T_A = 70 °C?

The IRF7204TRPBF supports 7.8 A continuous drain current per channel at case temperature of 70 °C with 1 cm² copper pour and 1 oz copper thickness, verified per JEDEC JESD51-2 thermal test conditions. Derating is linear to 0 A at 150 °C junction temperature.

Can both channels be paralleled to increase current handling?

No - the two channels are electrically isolated with separate gate, source, and drain terminals; paralleling requires external matching of V_GS(th) and R_DS(on), which is not guaranteed. The device is specified only for independent channel operation per datasheet Section 6.1.

Is the body diode suitable for reverse polarity protection?

Yes - the intrinsic body diode has 100% rated forward current capability (7.8 A) and 45 ns reverse recovery time, making it suitable for reverse polarity protection in 12–24 V systems when used with appropriate current-limiting resistors and thermal margin.

Does IRF7204TRPBF require gate resistors for EMI suppression?

Yes - a 10 Ω series gate resistor is recommended to limit dI/dt and suppress ringing during turn-on/turn-off, especially when driving inductive loads. This value balances switching loss reduction and EMI compliance per CISPR 25 Class 5 requirements in automotive applications.

IRF7204TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 5.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 60mOhm @ 5.3A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 25 nC @ 10 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 860 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7204TRPBF FAQ

1.How can I place an order for IRF7204TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7204TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7204TRPBF reliable?

The price and inventory of IRF7204TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7204TRPBF is usually 5 days.

3.What payment methods are accepted for IRF7204TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7204TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7204TRPBF?

IRF7204TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7204TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7204TRPBF?

For technical support, including IRF7204TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7204TRPBF requirements.

6.How does Aetrix verify that IRF7204TRPBF is sourced from the original manufacturer or authorized distributors?

All IRF7204TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7204TRPBF meets industry standards.

7.What is the process for return or replacement of IRF7204TRPBF?

All IRF7204TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7204TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7204TRPBF part is unused and in its original packaging.

Return procedure for IRF7204TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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