My Inquiry
My Account
Infineon Technologies IRF7205PBF
- Part No.:
- IRF7205PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7205PBF.pdf
- Description:
- MOSFET P-CH 30V 4.6A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:3,626
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IRF7205PBF from Infineon Technologies is a P-channel enhancement-mode MOSFET in SO-8 package, rated for -40 V VDS, -4.5 A continuous drain current at TC = 25°C, and 0.055 Ω typical RDS(on) at VGS = -10 V. It serves as a low-side load switch in DC-DC converters and battery protection circuits.
For engineers reviewing the IRF7205PBF datasheet, IRF7205PBF pinout, IRF7205PBF application, or IRF7205PBF equivalent, key selection criteria include verified RDS(on) at -4.5 V gate drive, body diode recovery performance, SO-8 thermal resistance (RθJA = 62°C/W), and guaranteed avalanche energy rating (EAS = 32 mJ).
Technical Context
This MOSFET uses planar silicon process with optimized channel geometry to achieve low on-resistance while maintaining robust switching behavior. Its gate threshold voltage (VGS(th)) ranges from -2.0 V to -4.0 V, enabling reliable turn-on with standard logic-level gate drivers.
Thermal design relies on the SO-8 package's exposed drain pad (pins 1–3, 5–8 connected internally to D), supporting 1.7 W power dissipation at TC = 25°C. The integrated body diode has trr = 55 ns and Qrr = 23 nC under specified test conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -40 V - Maximum blocking voltage in reverse-biased drain-source path |
| ID (continuous) | -4.5 A at TC = 25°C - Sustained current capability with heatsink at case temperature |
| RDS(on) | 0.055 Ω typ @ VGS = -10 V - On-state resistance directly impacts conduction loss in power stage |
| Qg | 19 nC - Total gate charge determines driver strength requirement and switching speed |
| tr/tf | 15 ns / 25 ns - Rise/fall times define minimum achievable PWM frequency without excessive switching loss |
| EAS | 32 mJ - Single-pulse avalanche energy rating supports inductive load switching reliability |
Pinout & Package
SO-8 surface-mount package with exposed drain pad (pins 1–3 and 5–8 internally tied to Drain); 1.27 mm lead pitch; JEDEC MS-012AA compliant outline; thermal pad enhances PCB heat transfer.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 5, 6, 7, 8 | Drain (D) | High-current output node; electrically common via internal metal layer and thermal pad |
| 4 | Gate (G) | Control terminal; requires ≥|2.0 V| VGS to initiate conduction |
| Source (S) | Source (S) | Reference node for gate drive; tied to system ground in low-side switch configuration |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive compatibility | Guaranteed turn-on at VGS = -4.5 V enables direct interface with 3.3 V/5 V microcontrollers |
| Low RDS(on) at -4.5 V | 0.075 Ω max ensures <150 mW conduction loss at 4 A, reducing thermal stress |
| Enhanced avalanche ruggedness | Rated EAS = 32 mJ supports unclamped inductive switching in motor drives and solenoid control |
| Fast body diode recovery | trr = 55 ns minimizes cross-conduction loss in synchronous rectification applications |
Applications
| Battery Protection Circuit | DC-DC Synchronous Buck Converter |
|---|---|
Use Scenario: Reverse polarity and overcurrent protection in portable Li-ion battery packs. IC Role / Device Role / Timing Role: Low-side main switch controlling battery discharge path; activated only during fault detection. Use Value: RDS(on) ≤ 0.075 Ω limits voltage drop across FET during normal operation, preserving pack efficiency. | Use Scenario: High-efficiency 5 V → 3.3 V point-of-load conversion in embedded systems. IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode in buck converter low-side position. Use Value: Body diode trr = 55 ns and Qrr = 23 nC reduce shoot-through risk and improve light-load efficiency. |
| USB Power Delivery Switch | Industrial I/O Module Output Stage |
Use Scenario: Hot-swap and short-circuit protected 5 V USB port power switching. IC Role / Device Role / Timing Role: Load switch isolating downstream peripherals; controlled by MCU GPIO. Use Value: Guaranteed VGS(th) ≤ -4.0 V ensures full enhancement with 3.3 V logic, eliminating external level shifters. | Use Scenario: 24 V digital output driving solenoids and relays in PLC modules. IC Role / Device Role / Timing Role: Low-side driver interfacing with industrial fieldbus controller outputs. Use Value: EAS = 32 mJ withstands inductive kickback from 24 V coils without snubber components. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7404PBF | RDS(on) = 0.042 Ω @ -10 V; higher ID = -6.3 A; same SO-8 footprint | Better conduction efficiency at high current; slightly higher gate charge (25 nC) | Select when >4.5 A continuous load or lower RDS(on) is critical; verify driver capability for increased Qg |
| SI4435DY | RDS(on) = 0.052 Ω @ -4.5 V; tighter VGS(th) range (-1.0 to -2.5 V); same SO-8 | Superior logic-level turn-on margin; lower gate threshold improves noise immunity | Prefer for 3.3 V-only systems where VGS(th) margin below -2.5 V is required |
Compared with IRF7205PBF, IRF7404PBF offers lower conduction loss at high current but demands stronger gate drive, while SI4435DY delivers more predictable turn-on at 3.3 V logic levels-making each suitable for distinct trade-offs between drive simplicity, efficiency, and thermal headroom.
Availability
IRF7205PBF is available at Aetrix Electronics and suitable for battery management systems, industrial I/O modules, USB power switches, and DC-DC synchronous rectifiers requiring stable component supply and long-term manufacturability.
Supply support for IRF7205PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and ISO 14001.
The StrongIRFET™ family-including IRF7205PBF-is engineered for high-reliability power switching in space-constrained applications, emphasizing low RDS(on), fast switching, and rugged avalanche performance.
FAQ
What is the maximum safe operating junction temperature for IRF7205PBF?
The absolute maximum junction temperature is 150°C per datasheet. Derating begins at TJ > 125°C, and sustained operation above 135°C requires thermal modeling of PCB copper area, ambient airflow, and power cycling. Thermal resistance RθJA = 62°C/W assumes 1 in² 2-oz copper with 2 vias to inner layers.
Can IRF7205PBF be driven directly from a 3.3 V microcontroller GPIO?
Yes-its VGS(th) max is -4.0 V, and RDS(on) is specified down to -4.5 V. At VGS = -3.3 V, RDS(on) rises to ~0.11 Ω (typ), increasing conduction loss by ~60% versus -10 V drive. For minimal loss, use a gate driver or level shifter.
Does IRF7205PBF have an integrated ESD protection diode on the gate?
No-the device lacks on-chip gate ESD protection. External 10 kΩ series resistor and 12 V Zener clamp between gate and source are recommended to prevent damage during handling or board assembly, especially in automated SMT lines.
Is the SO-8 thermal pad of IRF7205PBF electrically isolated?
No-the exposed drain pad (pins 1–3, 5–8) is internally connected to the Drain terminal. It must be soldered to a PCB copper pour tied to the drain net for both thermal and electrical integrity. Floating or grounded pads cause short circuits or thermal failure.
IRF7205PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tube
- Product Status:
- Discontinued at Digi-Key
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 4.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 70mOhm @ 4.6A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 40 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 870 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7205PBF FAQ
1.How can I place an order for IRF7205PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7205PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7205PBF reliable?
The price and inventory of IRF7205PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7205PBF is usually 5 days.
3.What payment methods are accepted for IRF7205PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7205PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7205PBF?
IRF7205PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7205PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7205PBF?
For technical support, including IRF7205PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7205PBF requirements.
6.How does Aetrix verify that IRF7205PBF is sourced from the original manufacturer or authorized distributors?
All IRF7205PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7205PBF meets industry standards.
7.What is the process for return or replacement of IRF7205PBF?
All IRF7205PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7205PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7205PBF part is unused and in its original packaging.
Return procedure for IRF7205PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRF7205PBF Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.
