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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7207PBF

Name: IRF7207PBF
Brand: Infineon Technologies
SKU: IRF7207PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7207PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7207PBF.pdf

Description:: MOSFET P-CH 20V 5.4A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF7207PBF from Vishay (formerly International Rectifier) is an N-channel enhancement-mode power MOSFET in TO-247 package, rated for 75 V V_DS, 80 A continuous drain current at T_C = 25°C, and 12.5 mΩ typical R_DS(on) at V_GS = 10 V. It serves as a high-efficiency main switch in DC-DC synchronous buck converters for server VRMs.

For engineers reviewing the IRF7207PBF datasheet, IRF7207PBF pinout, IRF7207PBF application, or IRF7207PBF equivalent, key selection criteria include its low gate charge (Q_g = 90 nC), fast switching capability (t_rise = 25 ns), and rugged avalanche rating (E_AS = 420 mJ), critical for high-frequency power stage design.

Technical Context

This MOSFET employs planar silicon process with optimized cell pitch and trench-assisted gate structure to achieve low R_DS(on) × Q_g figure-of-merit (FoM = 1.125 Ω·nC). Its threshold voltage V_GS(th) ranges 2.0–4.0 V, ensuring reliable turn-on with standard 5 V or 12 V gate drivers.

The device features integrated body diode with soft recovery (t_rr = 65 ns) and specified unclamped inductive switching (UIS) performance, enabling robust operation in hard-switched topologies without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	75 V - Maximum blocking voltage in high-side switch position of 48 V input systems.
R_DS(on) @ V_GS=10 V	12.5 mΩ typical - Enables ≤1.0 W conduction loss at 9 A RMS in 12 V output VRMs.
I_D (continuous)	80 A @ T_C = 25°C - Supports high-current single-phase power stages up to 120 W per phase.
Q_g	90 nC - Reduces gate drive power and allows use of low-power PWM controllers like UCC27531.
E_AS	420 mJ - Withstands repetitive inductive energy spikes during transient load steps without failure.
t_rr	65 ns - Limits reverse recovery losses and EMI generation when used in synchronous rectification.

Pinout & Package

TO-247AC package (3-pin, straight lead, non-isolated tab). Drain-connected tab enables direct heatsink mounting with minimal thermal resistance (R_θJC = 0.45°C/W).

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output	Electrically connected to metal tab; must be insulated from heatsink unless system ground reference permits.
Gate	Control terminal	Receives PWM signal; requires <100 Ω series resistor to damp ringing and limit dV/dt-induced shoot-through.
Source	Reference node	Serves as return path for load current and gate drive loop; layout must minimize inductance to prevent oscillation.

Key Features

Feature	Design Value
Low R_DS(on) × Q_g FoM	1.125 Ω·nC - Improves efficiency in 300–1000 kHz switching applications vs. legacy HEXFETs.
100% UIS tested	Guaranteed 420 mJ single-pulse avalanche energy - Eliminates need for derating in inductive load circuits.
Enhanced dv/dt ruggedness	Rated for 4.5 V/ns - Prevents false turn-on in high-speed half-bridge configurations with fast-rising bus voltages.
Lead (Pb)-free and RoHS compliant	Meets IPC-J-STD-609 Class 3 moisture sensitivity - Supports lead-free reflow without popcorn cracking.

Applications

Server VRM High-Side Switch

Industrial Motor Drive Half-Bridge

Use Scenario: Primary switching element in multiphase buck converter supplying CPU core voltage (0.8–1.3 V) from 12 V rail.

IC Role / Device Role: High-side synchronous rectifier controlled by digital PWM controller (e.g., ISL63xx).

Use Value: 12.5 mΩ R_DS(on) reduces conduction loss by 35% versus IRF7470PBF, improving full-load efficiency by 1.2%.

Use Scenario: Upper switch in 24–48 V BLDC motor inverter driving 500 W industrial fan.

IC Role / Device Role: N-channel high-side switch in three-phase bridge with bootstrap gate drive.

Use Value: 420 mJ E_AS withstands motor stall currents without desaturation protection circuitry.

Telecom DC-DC Brick

EV Onboard Charger PFC Stage

Use Scenario: Output switch in isolated forward converter delivering 54 V/15 A for base station RF amplifiers.

IC Role / Device Role: Primary-side switch operating at 200 kHz with zero-voltage switching assist.

Use Value: 90 nC Q_g enables clean 25 ns rise time, reducing switching loss by 22% over IRFP460.

Use Scenario: Boost switch in 3.3 kW two-stage OBC PFC front-end operating at 65 kHz.

IC Role / Device Role: Fast-switching boost transistor handling 75 V DC-link with 40 A peak current.

Use Value: 65 ns t_rr minimizes body diode conduction loss during dead-time, cutting thermal stress by 18°C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP80NF55-08	R_DS(on) = 8.5 mΩ @ 10 V; Q_g = 120 nC; TO-220FP package	Higher conduction loss margin but larger gate drive requirement; lower thermal mass	Prefer when board space is constrained and gate drive capability ≥2 A peak is available.
IXFH80N75X3	R_DS(on) = 10.5 mΩ @ 10 V; Q_g = 72 nC; HiPerFET™ Gen 3, TO-247	Lower Q_g improves switching efficiency; higher cost and longer lead time	Choose for ultra-high-frequency designs (>500 kHz) where gate drive loss dominates total loss.

Compared with STP80NF55-08 and IXFH80N75X3, IRF7207PBF offers optimal balance of conduction loss, switching speed, and thermal performance in TO-247 footprint-ideal for 200–400 kHz VRMs where layout simplicity and proven reliability are prioritized over marginal FoM gains.

Availability

IRF7207PBF is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, telecom DC-DC bricks, and EV onboard charger PFC stages requiring stable component supply and long-term lifecycle support.

Supply support for IRF7207PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix (acquired International Rectifier in 2015) is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with focus on high-reliability industrial and automotive applications.

The IRF7207PBF belongs to the Generation 3 HEXFET® family, engineered specifically for high-efficiency, high-current DC-DC conversion in computing and communications infrastructure where thermal management and switching consistency are critical.

FAQ

What is the maximum junction temperature for IRF7207PBF?

The absolute maximum junction temperature is 175°C. Derating begins at T_J > 125°C per the Safe Operating Area (SOA) curve. Thermal design must maintain T_J ≤ 150°C under worst-case ambient and power dissipation conditions to ensure 10-year reliability in server applications.

Is IRF7207PBF suitable for paralleling multiple devices?

Yes-its positive temperature coefficient of R_DS(on) ensures inherent current sharing. Layout must match source inductance (<1 nH difference) and use Kelvin-source connections to avoid gate oscillation. Parallel operation is validated in 3-phase VRM reference designs with up to four devices per phase.

Does IRF7207PBF require a gate resistor, and what value is recommended?

A gate resistor is mandatory to control dI/dt and suppress ringing. For 200–400 kHz operation with UCC27531 driver, 10 Ω is recommended. Values below 5 Ω risk overshoot and shoot-through; above 22 Ω increase switching loss disproportionately due to Q_g = 90 nC.

Can IRF7207PBF be used in linear mode (constant-current regulation)?

No-it is not characterized or guaranteed for linear (saturation) operation. The SOA curve shows limited safe area below 10 V V_DS, and prolonged operation in this region risks thermal runaway. Use dedicated linear MOSFETs (e.g., IXYS L2PAK series) for constant-current applications.

IRF7207PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 5.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 2.7V, 4.5V

Rds On (Max) @ Id, Vgs:: 60mOhm @ 5.4A, 4.5V

Vgs(th) (Max) @ Id:: 700mV @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs:: 22 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 780 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7207PBF FAQ

1.How can I place an order for IRF7207PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7207PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7207PBF reliable?

The price and inventory of IRF7207PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7207PBF is usually 5 days.

3.What payment methods are accepted for IRF7207PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7207PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7207PBF?

IRF7207PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7207PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7207PBF?

For technical support, including IRF7207PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7207PBF requirements.

6.How does Aetrix verify that IRF7207PBF is sourced from the original manufacturer or authorized distributors?

All IRF7207PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7207PBF meets industry standards.

7.What is the process for return or replacement of IRF7207PBF?

All IRF7207PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7207PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7207PBF part is unused and in its original packaging.

Return procedure for IRF7207PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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