Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7210PBF

Name: IRF7210PBF
Brand: Infineon Technologies
SKU: IRF7210PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRF7210PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7210PBF.pdf

Description:: MOSFET P-CH 12V 16A 8SO

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:7,942

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRF7210PBF from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode MOSFET designed for high-efficiency load and battery management switching. It features -12 V V_DS, 0.007 Ω R_DS(on) at V_GS = -4.5 V and I_D = -16 A, SO-8 package with enhanced thermal leadframe, and operates across -55 °C to +150 °C junction temperature range - used in portable power rails and USB OTG power switches.

For engineers reviewing the IRF7210PBF datasheet, IRF7210PBF pinout, IRF7210PBF application, or IRF7210PBF equivalent, key selection criteria include verified R_DS(on) at low gate drive (-4.5 V), pulsed current capability (±100 A), body diode recovery performance (t_rr = 165–247 ns), and SO-8 thermal resistance (R_θJA = 50 °C/W on 1-in² copper).

Technical Context

This device implements a trench-gate, silicon-based P-channel MOSFET architecture optimized for low-voltage, high-current switching in synchronous rectification and reverse-polarity protection circuits. Its gate threshold voltage (V_GS(th) = -0.6 V max) enables reliable turn-on with logic-level control, while its 17,179 pF C_iss and 8,986 pF C_rss support stable operation under fast-switching conditions up to 1 MHz.

The integrated body diode exhibits V_SD = -1.2 V at I_S = -2.5 A and T_J = 25 °C, with Q_rr = 296–444 nC and dI/dt = 85 A/µs - critical for minimizing switching losses in buck converters and hot-swap controllers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-12 V - maximum drain-source blocking voltage for low-voltage rail protection
R_DS(on)	0.007 Ω @ V_GS = -4.5 V, I_D = -16 A - enables <10 mW conduction loss at 10 A load
I_D (cont)	±16 A @ T_A = 25 °C - supports high-current load switching without external heatsink
Q_g	212 nC - determines gate driver strength requirement for <100 ns switching transitions
t_rr	165–247 ns - defines minimum dead-time setting to avoid shoot-through in half-bridge topologies
R_θJA	50 °C/W - thermal limit on 1-in² copper board; derates 0.02 W/°C above 70 °C ambient
V_GS(th)	-0.6 V max - ensures full enhancement with 3.3 V or 5 V logic-compatible gate drive

Pinout & Package

IRF7210PBF uses an SO-8 surface-mount package with exposed drain pads for improved thermal dissipation. The leadframe is modified for multiple-die capability and compatibility with vapor-phase, infrared, and wave soldering processes.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 7, 8	Drain (D)	Common high-current output node; pins 1–5 and 7–8 internally paralleled for low-inductance, high-current path
6	Gate (G)	Control input; requires ≤12 V \|V_GS\|; Miller charge (Q_gd = 52 nC) affects switching speed
Source (S)	Source (S)	Reference node for gate drive; tied to system ground or negative rail in high-side switch configurations

Key Features

Feature	Design Value
Ultra-low R_DS(on)	0.007 Ω at -4.5 V gate drive - reduces conduction loss by >40% vs. standard P-MOSFETs in 5 V systems
Enhanced SO-8 thermal leadframe	50 °C/W R_θJA on 1-in² copper - enables 2.5 W continuous dissipation without forced air
Fast body diode recovery	t_rr = 165–247 ns, Q_rr = 296–444 nC - minimizes reverse-recovery spikes in synchronous DC/DC stages
Logic-level gate drive	V_GS(th) ≤ -0.6 V - fully enhances with 3.3 V microcontroller GPIO, eliminating level-shifter need
Lead-free and RoHS-compliant	Pb-free plating per JEDEC J-STD-020 - qualified for consumer-grade reflow profiles including vapor phase

Applications

USB Power Delivery Switch

Portable Device Battery Protection

Use Scenario: Bidirectional 5 V power routing between host and peripheral in USB OTG applications.

IC Role / Device Role / Timing Role: P-channel high-side load switch controlling VBUS path with reverse-current blocking.

Use Value: 0.007 Ω R_DS(on) limits voltage drop to <80 mV at 10 A, preserving USB 2.0/3.0 voltage compliance.

Use Scenario: Overvoltage and reverse-polarity protection in Li-ion battery packs for wearables.

IC Role / Device Role / Timing Role: Reverse-battery protection switch placed between battery terminal and system ground.

Use Value: Withstands -14 V transient V_DS and blocks >100 A fault current via pulsed rating, preventing pack damage.

Hot-Swap Controller Interface

Synchronous Buck Converter High-Side Switch

Use Scenario: Inrush current limiting during live insertion of PCIe add-in cards or modular peripherals.

IC Role / Device Role / Timing Role: Controlled turn-on switch in series with supply rail, driven by dedicated hot-swap controller.

Use Value: Gate charge (Q_g = 212 nC) allows precise slew-rate control to limit dI/dt to <10 A/ms, avoiding bus collapse.

Use Scenario: High-efficiency 3.3 V or 5 V point-of-load regulation in FPGA or SoC power supplies.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode in buck converter low-side position.

Use Value: Body diode t_rr < 250 ns enables clean commutation at 500 kHz–1 MHz, reducing EMI and improving efficiency by 2–3%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET load switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7107DP-T1-GE3	R_DS(on) = 0.0085 Ω @ -4.5 V; Q_g = 190 nC; SO-8 package	Higher R_DS(on) increases conduction loss by ~21% at 16 A; lower Q_g improves switching speed	Prefer when gate drive strength is limited but thermal margin exists
DMG2307L-7	R_DS(on) = 0.012 Ω @ -4.5 V; Q_g = 12.5 nC; SOT-23-6 package	Lower current rating (±4.2 A) and higher on-resistance; unsuitable for >5 A loads	Only suitable for space-constrained, low-power (<2 W) applications

Compared with Si7107DP-T1-GE3 and DMG2307L-7, IRF7210PBF delivers the lowest R_DS(on) in SO-8 for 12 V systems, enabling highest efficiency at high current, while maintaining robust pulsed capability (±100 A) and body diode performance needed for synchronous rectification.

Availability

IRF7210PBF is available at Aetrix Electronics and suitable for USB power delivery switches, portable battery protection circuits, hot-swap interfaces, and synchronous buck converter designs requiring stable component supply and long-term industrial availability.

Supply support for IRF7210PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with core expertise in silicon and wide-bandgap power devices.

The IRF7210PBF belongs to Infineon's HEXFET® P-channel MOSFET product line, engineered for ultra-low on-resistance and fast switching in battery-powered and space-constrained power management systems.

FAQ

What is the maximum safe operating voltage for IRF7210PBF in continuous DC operation?

The absolute maximum V_DS is -12 V under continuous DC conditions, with a guaranteed breakdown voltage of -14 V at I_D = -5 mA and V_GS = 0 V. Operation beyond -12 V risks irreversible avalanche failure unless explicitly rated for repetitive unclamped inductive switching per SOA curves.

Can IRF7210PBF be driven directly by a 3.3 V microcontroller GPIO?

Yes - its gate threshold voltage is specified at -0.6 V maximum, and it achieves full enhancement (R_DS(on) ≤ 0.007 Ω) with V_GS = -4.5 V. A 3.3 V GPIO can drive it in open-drain configuration with pull-up to -5 V or via simple inverting level shifter for optimal performance.

Does IRF7210PBF include an integrated body diode, and what are its key parameters?

Yes - it integrates a monolithic source-drain p-n junction body diode with V_SD = -1.2 V at I_S = -2.5 A and T_J = 25 °C, reverse recovery time t_rr = 165–247 ns, and Q_rr = 296–444 nC at dI/dt = 85 A/µs - enabling use in synchronous rectification without external diodes.

What PCB layout practices maximize thermal performance for IRF7210PBF in SO-8?

Maximize copper area connected to pins 1–5 and 7–8 (drain) using ≥1 in² of 2-oz copper, thermally connect the exposed drain pad to internal ground/power planes via ≥6 thermal vias (0.3 mm diameter), and keep gate trace short and shielded from drain noise to prevent oscillation due to 52 nC Miller charge.

IRF7210PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 12 V

Current - Continuous Drain (Id) @ 25°C:: 16A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 7mOhm @ 16A, 4.5V

Vgs(th) (Max) @ Id:: 600mV @ 500µA (Min)

Gate Charge (Qg) (Max) @ Vgs:: 212 nC @ 5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 17179 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7210PBF FAQ

1.How can I place an order for IRF7210PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7210PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7210PBF reliable?

The price and inventory of IRF7210PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7210PBF is usually 5 days.

3.What payment methods are accepted for IRF7210PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7210PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7210PBF?

IRF7210PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7210PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7210PBF?

For technical support, including IRF7210PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7210PBF requirements.

6.How does Aetrix verify that IRF7210PBF is sourced from the original manufacturer or authorized distributors?

All IRF7210PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7210PBF meets industry standards.

7.What is the process for return or replacement of IRF7210PBF?

All IRF7210PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7210PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7210PBF part is unused and in its original packaging.

Return procedure for IRF7210PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…