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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7210TRPBF

Name: IRF7210TRPBF
Brand: Infineon Technologies
SKU: IRF7210TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7210TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7210TRPBF.pdf

Description:: MOSFET P-CH 12V 16A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF7210TRPBF from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode MOSFET designed for high-efficiency load switching in low-voltage DC systems. It features -12 V V_DS, 0.007 Ω R_DS(on) at V_GS = -4.5 V and I_D = -16 A, ±100 A pulsed drain current, and SO-8 package with enhanced thermal leadframe - used in battery protection circuits and USB power switches.

For engineers reviewing the IRF7210TRPBF datasheet, IRF7210TRPBF pinout, IRF7210TRPBF application, or IRF7210TRPBF equivalent, key selection criteria include verified R_DS(on) at -4.5 V gate drive, body diode reverse recovery performance (t_rr = 165–247 ns), SO-8 thermal resistance (R_θJA = 50 °C/W), and guaranteed -14 V breakdown voltage under specified test conditions.

Technical Context

This device operates as a single N-channel logic-level compatible P-MOSFET switch with integrated body diode. Its gate threshold voltage (V_GS(th)) ranges from -0.6 V to -1.0 V, enabling turn-on with standard 3.3 V or 5 V control signals. The low 0.007 Ω on-resistance minimizes conduction loss in high-current paths below 12 V.

Dynamic characteristics include 212 nC total gate charge, 52 nC Miller charge, and 3.0 ns rise time at V_DD = -10 V - supporting fast switching in synchronous buck converters and hot-swap controllers. Thermal design is enabled by SO-8's 50 °C/W junction-to-ambient rating on 1-inch² copper board.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-12 V maximum drain-source voltage - supports 12 V rail operation with 2 V margin against transients
R_DS(on)	0.007 Ω at V_GS = -4.5 V, I_D = -16 A - enables ≤112 mW conduction loss at full rated current
I_D (continuous)	±16 A at T_A = 25°C - suitable for high-current load switches without forced airflow
Q_g	212 nC total gate charge - determines required gate driver current for <100 ns switching transitions
t_rr	165–247 ns reverse recovery time - critical for minimizing shoot-through in half-bridge configurations
R_θJA	50 °C/W junction-to-ambient - defines thermal derating slope (0.02 W/°C) above 70°C ambient
V_GS(th)	-0.6 to -1.0 V - ensures reliable turn-on with 3.3 V GPIO or microcontroller outputs

Pinout & Package

IRF7210TRPBF uses the industry-standard SO-8 surface-mount package with exposed drain pads for improved thermal dissipation. The leadframe is modified for enhanced thermal performance and multi-die compatibility.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 7, 8	Drain (D)	Parallel-connected internal drain terminals - provide low-inductance, high-current path to PCB ground plane
6	Gate (G)	Control input requiring negative voltage relative to source to turn on P-MOSFET
Source (S)	Source (S)	Reference node for gate drive; tied to positive rail in high-side switch configuration

Key Features

Feature	Design Value
Ultra-low R_DS(on)	0.007 Ω at -4.5 V gate drive - reduces I²R losses in portable battery-powered systems
Enhanced SO-8 thermal leadframe	50 °C/W R_θJA on 1″² copper - allows higher continuous current vs. standard SO-8 equivalents
Fast body diode	t_rr = 165–247 ns, Q_rr = 296–444 nC - improves efficiency in synchronous rectification and flyback snubbing
Logic-level compatible	V_GS(th) ≤ -1.0 V - enables direct drive from 3.3 V microcontrollers without level-shifting circuitry
Lead-free and RoHS compliant	Pb-free plating and halogen-free molding compound - meets IPC-J-STD-020 moisture sensitivity level 1

Applications

Battery Protection Circuit

USB Power Switch

Use Scenario: Reverse polarity and overcurrent protection in Li-ion battery packs for wearables and medical devices.

IC Role / Device Role / Timing Role: High-side P-MOSFET switch controlling battery discharge path; body diode blocks reverse current during insertion.

Use Value: 0.007 Ω R_DS(on) limits voltage drop to <112 mV at 16 A, preserving battery runtime and reducing thermal stress.

Use Scenario: Hot-plug power management for USB Type-A ports in docking stations and industrial hubs.

IC Role / Device Role / Timing Role: Load switch isolating downstream peripherals during enumeration or fault events.

Use Value: Fast 3.0 ns rise time and 212 nC Q_g support controlled ramp-up of 5 V bus voltage within USB specification timing windows.

DC-DC Synchronous Rectifier

Industrial 12 V Load Switch

Use Scenario: Secondary-side synchronous rectification in isolated 12 V output flyback converters for PoE-powered equipment.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode; driven by transformer-coupled gate signal.

Use Value: Body diode t_rr ≤ 247 ns and Q_rr ≤ 444 nC minimize switching losses and EMI during dead-time transitions.

Use Scenario: Remote-controlled 12 V load switching in programmable logic controllers and sensor interface modules.

IC Role / Device Role / Timing Role: High-side switch enabling/disabling 12 V solenoid or relay drivers via microcontroller GPIO.

Use Value: -0.6 V V_GS(th) ensures robust turn-on with 3.3 V logic; SO-8 thermal design sustains 12 A continuous current at 70°C ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7157DP-T1-GE3	R_DS(on) = 0.0085 Ω @ -4.5 V; higher Q_g (240 nC); same SO-8 package	Slightly higher conduction loss but tighter V_GS(th) distribution (−0.7 to −1.1 V)	Preferred where tighter gate threshold consistency is needed over minimal R_DS(on) advantage
DMG2305UVT-7	R_DS(on) = 0.028 Ω @ -4.5 V; lower I_D rating (±4.2 A); same footprint	Not suitable for >5 A continuous loads; better suited for space-constrained low-current switches	Select only when board area is constrained and current demand is ≤4 A

Compared with Si7157DP-T1-GE3 and DMG2305UVT-7, IRF7210TRPBF delivers the lowest R_DS(on) and highest continuous current capability in SO-8, making it optimal for thermally demanding 12 V load-switching applications where conduction loss dominates system efficiency.

Availability

IRF7210TRPBF is available at Aetrix Electronics and suitable for battery protection circuits, USB power switches, DC-DC synchronous rectifiers, and industrial 12 V load switches requiring stable component supply across production lifecycles.

Supply support for IRF7210TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with core expertise in silicon and wide-bandgap power devices.

The HEXFET® Power MOSFET product line - including IRF7210TRPBF - was developed for high-efficiency, low-voltage DC power switching in portable, automotive, and industrial systems where thermal performance and gate-drive simplicity are critical.

FAQ

What is the maximum safe operating voltage for IRF7210TRPBF?

The absolute maximum drain-source voltage (V_DS) is -12 V, with a typical breakdown voltage of -14 V at I_D = -5 mA and V_GS = 0 V. Operation beyond -12 V violates the absolute maximum rating and risks irreversible avalanche failure, even if transient.

Can IRF7210TRPBF be driven directly by a 3.3 V microcontroller GPIO?

Yes - its gate threshold voltage (V_GS(th)) is specified from -0.6 V to -1.0 V, ensuring reliable turn-on with 3.3 V logic referenced to source. However, full R_DS(on) performance requires V_GS ≤ -4.5 V, so external level-shifting may be needed for lowest-loss operation.

Does IRF7210TRPBF include an integrated body diode, and what are its key parameters?

Yes - it integrates a monolithic p-n junction body diode with V_SD = -1.2 V at I_S = -2.5 A and T_J = 25°C, reverse recovery time t_rr = 165–247 ns, and Q_rr = 296–444 nC. These values are measured under standardized di/dt = 85 A/µs conditions and define its suitability for synchronous rectification.

What is the thermal resistance of IRF7210TRPBF in standard SO-8 mounting?

Its maximum junction-to-ambient thermal resistance (R_θJA) is 50 °C/W when mounted on a 1 inch² copper pad per JEDEC standards. Derating begins at 70°C ambient, with linear reduction of 0.02 W/°C - meaning power dissipation drops to 1.6 W at 70°C and 0 W at 150°C junction temperature.

IRF7210TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 12 V

Current - Continuous Drain (Id) @ 25°C:: 16A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 7mOhm @ 16A, 4.5V

Vgs(th) (Max) @ Id:: 600mV @ 500µA (Min)

Gate Charge (Qg) (Max) @ Vgs:: 212 nC @ 5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 17179 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7210TRPBF FAQ

1.How can I place an order for IRF7210TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7210TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7210TRPBF reliable?

The price and inventory of IRF7210TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7210TRPBF is usually 5 days.

3.What payment methods are accepted for IRF7210TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7210TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7210TRPBF?

IRF7210TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7210TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7210TRPBF?

For technical support, including IRF7210TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7210TRPBF requirements.

6.How does Aetrix verify that IRF7210TRPBF is sourced from the original manufacturer or authorized distributors?

All IRF7210TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7210TRPBF meets industry standards.

7.What is the process for return or replacement of IRF7210TRPBF?

All IRF7210TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7210TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7210TRPBF part is unused and in its original packaging.

Return procedure for IRF7210TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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