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Infineon Technologies IRF7220TRPBF
- Part No.:
- IRF7220TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7220TRPBF.pdf
- Description:
- MOSFET P-CH 14V 11A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:6,108
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Product details
Overview
IRF7220TRPBF from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode MOSFET designed for high-efficiency load switching in portable power systems. It features -14 V VDS, 0.012 Ω RDS(on) at VGS = -4.5 V, ±11 A continuous drain current at 25°C, and SO-8 package with enhanced thermal leadframe - used in battery protection circuits, USB OTG power switches, and dual-supply rail clamps.
For engineers reviewing the IRF7220TRPBF datasheet, IRF7220TRPBF pinout, IRF7220TRPBF application, or IRF7220TRPBF equivalent, key selection criteria include verified RDS(on) at low gate drive (-4.5 V), body diode forward voltage (-1.2 V @ -2.5 A), avalanche energy rating (110 mJ), and SO-8 thermal resistance (50 °C/W junction-to-ambient).
Technical Context
This device operates as a single P-channel silicon-based power switch with integrated body diode, optimized for synchronous rectification and reverse-polarity protection. Its gate threshold voltage (-0.6 V min) enables turn-on with logic-level gate drive, and its low 84 nC total gate charge supports efficient PWM control up to several hundred kHz.
The SO-8 package uses a customized leadframe to improve thermal performance over standard SO-8, enabling higher current density per unit board area. The device's 160–240 ns reverse recovery time and 147–220 nC Qrr are specified under controlled di/dt (100 A/µs), supporting fast-switching DC-DC converter topologies where body diode conduction occurs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -14 V - Maximum blocking voltage for negative-rail switching applications |
| RDS(on) | 0.012 Ω @ VGS = -4.5 V - Enables <130 mW conduction loss at 11 A, critical for battery-powered efficiency |
| ID (25°C) | ±11 A - Continuous drain current rating defines usable load capacity in compact PCB layouts |
| EAS | 110 mJ - Single-pulse avalanche energy supports robustness against inductive switching transients |
| VSD | -1.2 V @ IS = -2.5 A - Forward voltage of integrated body diode impacts freewheeling losses in buck or OR-ing circuits |
| Qg | 84 nC (typ) - Total gate charge determines required driver strength and switching loss at 500 kHz PWM |
| RθJA | 50 °C/W - Junction-to-ambient thermal resistance measured on 1-inch² copper board, sets max power derating slope |
Pinout & Package
IRF7220TRPBF is housed in a surface-mount SO-8 package (JEDEC MS-012AA) with exposed drain pads on pins 1–3 and 5–7, gate on pin 4, and source on pins 6 and 8. The modified leadframe enhances thermal dissipation and supports multi-die configurations.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 5, 7 | Drain (D) | High-current output node; internally paralleled for low RDS(on); connects to negative supply or load return |
| 4 | Gate (G) | Control input requiring negative VGS for turn-on; 12 V absolute max rating limits driver selection |
| 6, 8 | Source (S) | Reference node for gate drive; tied to system ground or positive rail in high-side switch configurations |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 0.012 Ω at -4.5 V gate drive enables >95% efficiency in 3.3 V–5 V load switches |
| Enhanced SO-8 thermal leadframe | Reduces RθJA by ~20% vs. standard SO-8, allowing 2.5 W dissipation at 70°C ambient |
| Logic-level compatible gate | VGS(th) range (-0.6 V to -1.0 V) ensures full enhancement with 3.3 V microcontroller outputs |
| Integrated body diode | 1.2 V VSD and 160 ns trr support bidirectional current handling in USB PD and hot-swap circuits |
Applications
| Battery Protection Circuit | USB OTG Power Switch |
|---|---|
Use Scenario: Preventing reverse current flow during battery charging and discharging cycles in Li-ion packs. IC Role / Device Role / Timing Role: P-channel MOSFET configured as back-to-back switch with gate driven by charge controller to block fault currents. Use Value: 0.012 Ω RDS(on) minimizes voltage drop across protection FET, preserving battery runtime and state-of-charge accuracy. | Use Scenario: Enabling host-mode power delivery from mobile devices to peripherals via USB On-The-Go. IC Role / Device Role / Timing Role: High-side load switch controlling VBUS path between battery and USB connector, activated only when OTG mode is asserted. Use Value: Low gate charge (84 nC) allows fast turn-on/turn-off (<1 µs) synchronized with USB enumeration timing. |
| Dual-Supply Rail Clamp | Hot-Swap Controller Interface |
Use Scenario: Clamping voltage spikes between redundant 5 V and 3.3 V rails during power sequencing or fault events. IC Role / Device Role / Timing Role: Bidirectional clamp using body diode and channel conduction to limit differential rail voltage to safe levels. Use Value: 110 mJ EAS withstands repeated transient overvoltage without degradation, extending system reliability. | Use Scenario: Isolating downstream circuitry during live insertion into powered backplanes or industrial I/O modules. IC Role / Device Role / Timing Role: Controlled inrush limiter placed between hot-swap controller output and load capacitance. Use Value: Linear derating factor (0.02 W/°C) enables precise thermal margin calculation for 85°C industrial environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7157DP-T1-GE3 | RDS(on) = 0.014 Ω @ -4.5 V; Qg = 72 nC; SO-8 package | Lower gate charge reduces driver requirements but slightly higher conduction loss | Preferred where gate drive strength is limited and thermal margin exceeds 0.2 W |
| DMG2305UVT-7 | RDS(on) = 0.045 Ω @ -4.5 V; smaller SOT-23-6 package; lower ID (4.2 A) | Not suitable for >5 A loads; better for space-constrained low-power nodes | Select only for sub-3 A applications where board area is prioritized over efficiency |
Compared with Si7157DP-T1-GE3 and DMG2305UVT-7, IRF7220TRPBF delivers the lowest RDS(on) in SO-8, making it optimal for high-current, thermally constrained battery management systems where conduction loss dominates total power loss.
Availability
IRF7220TRPBF is available at Aetrix Electronics and suitable for battery protection circuits, USB OTG power switches, and dual-supply rail clamps requiring stable component supply across production lifecycles.
Supply support for IRF7220TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with roots in International Rectifier's power MOSFET legacy.
The HEXFET® product line - including IRF7220TRPBF - was engineered specifically for high-efficiency, low-voltage DC power distribution in portable and battery-operated systems.
FAQ
What is the maximum safe operating voltage for IRF7220TRPBF in continuous DC operation?
The absolute maximum drain-to-source voltage (VDS) is -14 V under all conditions. Operation beyond this rating risks irreversible avalanche breakdown. Derating is not required at room temperature, but design margins should account for transient overshoot - especially in inductive load switching - where peak VDS must remain ≤ -14 V even during turn-off.
Can IRF7220TRPBF be driven directly from a 3.3 V microcontroller GPIO?
Yes - its gate threshold voltage (VGS(th)) ranges from -0.6 V to -1.0 V, and it achieves full enhancement (RDS(on) ≤ 0.012 Ω) with -4.5 V gate drive. A 3.3 V GPIO pulling the gate to ground while source is at +3.3 V yields VGS ≈ -3.3 V, sufficient for near-minimum RDS(on) in most load conditions.
Does IRF7220TRPBF include built-in ESD protection on the gate terminal?
No - the device lacks integrated gate oxide protection diodes. External Zener clamping (e.g., 12 V TVS between gate and source) is recommended in systems exposed to handling or system-level ESD events, as gate-to-source voltage must not exceed ±12 V per datasheet limits.
How does the SO-8 leadframe modification improve thermal performance compared to standard SO-8 packages?
The customized leadframe increases copper cross-section at drain terminals and improves heat spreading from die to PCB copper. This reduces effective RθJA from ~62 °C/W (standard SO-8) to 50 °C/W (measured on 1-inch² copper), enabling ~25% higher continuous power dissipation before reaching 150°C junction temperature.
IRF7220TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 14 V
- Current - Continuous Drain (Id) @ 25°C:
- 11A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 12mOhm @ 11A, 4.5V
- Vgs(th) (Max) @ Id:
- 600mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs:
- 125 nC @ 5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 8075 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.5W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7220TRPBF FAQ
1.How can I place an order for IRF7220TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7220TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7220TRPBF reliable?
The price and inventory of IRF7220TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7220TRPBF is usually 5 days.
3.What payment methods are accepted for IRF7220TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7220TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7220TRPBF?
IRF7220TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7220TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7220TRPBF?
For technical support, including IRF7220TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7220TRPBF requirements.
6.How does Aetrix verify that IRF7220TRPBF is sourced from the original manufacturer or authorized distributors?
All IRF7220TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7220TRPBF meets industry standards.
7.What is the process for return or replacement of IRF7220TRPBF?
All IRF7220TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7220TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7220TRPBF part is unused and in its original packaging.
Return procedure for IRF7220TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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