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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7233PBF

Name: IRF7233PBF
Brand: Infineon Technologies
SKU: IRF7233PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7233PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7233PBF.pdf

Description:: MOSFET P-CH 12V 9.5A 8SO

Quantity:: RFQ Add To RFQ list

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Inventory:5,440

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Product details

Overview

IRF7233PBF from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode MOSFET designed for high-efficiency load switching in low-voltage DC systems. It features -12 V V_DS, 0.020 Ω R_DS(on) at V_GS = -4.5 V, ±9.5 A continuous drain current, and SO-8 package with enhanced thermal leadframe - used in battery protection circuits, USB power switches, and portable device power rails.

For engineers reviewing the IRF7233PBF datasheet, IRF7233PBF pinout, IRF7233PBF application, or IRF7233PBF equivalent, key selection criteria include verified R_DS(on) at -4.5 V gate drive, body diode reverse recovery performance (t_rr = 43–65 ns), SO-8 thermal resistance (R_θJA = 50 °C/W), and avalanche energy rating (E_AS = 60 mJ).

Technical Context

This MOSFET operates as a high-side or low-side load switch in 3.3 V/5 V logic-controlled power domains. Its gate threshold voltage (V_GS(th) = -0.6 V min) ensures reliable turn-on with standard I/O drivers, while its ultra-low on-resistance minimizes conduction loss in battery-fed applications where efficiency below 1 V drop is critical.

The integrated body diode supports bidirectional current handling in H-bridge or OR-ing configurations. Its reverse recovery charge (Q_rr = 35–52 nC) and fast t_rr enable use in synchronous rectification and PWM-controlled power paths without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-12 V - Maximum blocking voltage for 3.3 V/5 V system rail switching
R_DS(on)	0.020 Ω @ V_GS = -4.5 V - Enables <0.1 V conduction drop at 5 A load current
I_D (continuous)	±9.5 A @ T_A = 25°C - Supports high-current USB-C PD or battery discharge paths
E_AS	60 mJ - Withstands inductive load turn-off transients without failure
t_rr	43–65 ns - Limits switching loss and EMI in 100–500 kHz PWM applications
R_θJA	50 °C/W - Requires minimal copper area (1 in²) for full-power operation at 70°C ambient
Q_g	49–74 nC - Compatible with low-drive-strength microcontroller GPIOs via gate resistor tuning

Pinout & Package

IRF7233PBF is housed in a modified SO-8 package with enhanced thermal leadframe and multiple-die capability. The package conforms to JEDEC MS-012AA and supports vapor phase, infrared, and wave soldering.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6	Drain (D)	Common high-current output node; internally paralleled for low R_DS(on)
7	Gate (G)	Logic-level control input; requires no level-shifting for 3.3 V MCU drive
8	Source (S)	Return path for load current; tied to system ground or battery negative in high-side config

Key Features

Feature	Design Value
Ultra-low R_DS(on)	0.020 Ω enables <100 mW conduction loss at 5 A - critical for thermal-limited portable PCBs
Enhanced SO-8 thermal leadframe	Reduces R_θJA by ~20% vs. standard SO-8 - allows higher sustained current on compact layouts
Low gate charge	Q_g = 49–74 nC permits fast switching with minimal driver power consumption
Robust avalanche rating	60 mJ single-pulse energy tolerance protects against inductive kickback in motor or solenoid loads

Applications

Battery Protection Circuit

USB Power Delivery Switch

Use Scenario: Reverse polarity and overcurrent protection in Li-ion battery packs for wearables and medical devices.

IC Role / Device Role: High-side P-channel MOSFET acting as active disconnect switch controlled by protection IC.

Use Value: 0.020 Ω R_DS(on) limits voltage drop to ≤100 mV at 5 A, preserving battery runtime and minimizing heat rise on small flex PCBs.

Use Scenario: VBUS path control in USB-C receptacles supporting 3 A/5 V and 1.5 A/9 V profiles.

IC Role / Device Role: Load switch enabling/disabling power delivery under MCU or PMIC command.

Use Value: Fast t_rr (43–65 ns) and low Q_rr prevent shoot-through during hot-plug transitions and reduce EMI filtering burden.

Portable Device Power Rail

OR-ing Diode Replacement

Use Scenario: Selective power routing between main battery and backup coin cell in always-on IoT sensors.

IC Role / Device Role: Low-dropout power path selector operating from 2.8–4.2 V battery range.

Use Value: Gate threshold of -0.6 V ensures full enhancement even at end-of-life battery voltage (~2.8 V), eliminating need for external bias.

Use Scenario: Redundant power supply OR-ing in industrial controllers with dual 5 V inputs.

IC Role / Device Role: Active OR-ing switch replacing discrete Schottky diodes to minimize forward drop.

Use Value: Body diode V_SD = -1.2 V at -2.5 A is lower than typical Schottky (≥0.35 V), reducing conduction loss by >70% versus passive solution.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7157DP-T1-GE3	R_DS(on) = 0.022 Ω @ -4.5 V; Q_g = 42 nC; SO-8 footprint identical	Slightly lower gate charge improves switching speed but reduces avalanche margin (E_AS = 45 mJ)	Preferred when fast turn-off (<100 ns) is prioritized over inductive transient robustness
DMG2305UVT-7	R_DS(on) = 0.035 Ω @ -4.5 V; higher R_DS(on) increases conduction loss by ~75%	Lower cost; suitable only for ≤3 A continuous loads due to thermal derating	Select when board space is constrained and peak current remains below 3.5 A

Compared with Si7157DP-T1-GE3 and DMG2305UVT-7, IRF7233PBF delivers the lowest R_DS(on) and highest E_AS in SO-8, making it optimal for thermally dense, high-reliability battery management where both efficiency and fault tolerance are non-negotiable.

Availability

IRF7233PBF is available at Aetrix Electronics and suitable for battery protection circuits, USB power delivery switches, and portable device power rails requiring stable component supply across production lifecycles.

Supply support for IRF7233PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with deep expertise in silicon-based power devices.

The IRF7233PBF belongs to Infineon's HEXFET® P-channel MOSFET product line, engineered specifically for high-efficiency, low-voltage DC load switching in space-constrained portable and battery-powered systems.

FAQ

What is the maximum safe operating temperature for IRF7233PBF?

The junction temperature must not exceed +150°C, and the storage temperature range is -55°C to +150°C. At 70°C ambient, the device supports 6.0 A continuous drain current with derating at 0.02 W/°C above that point. Thermal design must account for R_θJA = 50 °C/W on a 1 in² copper pad.

Can IRF7233PBF be driven directly by a 3.3 V microcontroller GPIO?

Yes - its gate threshold voltage is -0.6 V (min), and it fully enhances at V_GS = -3.3 V, delivering R_DS(on) ≤ 0.028 Ω. For reliable turn-on across process variation, a pull-down resistor on the gate is recommended to ensure solid off-state when GPIO is high-impedance.

Does IRF7233PBF include an integrated body diode, and what are its characteristics?

Yes - it integrates a monolithic p-n junction body diode rated for -2.5 A continuous source current. Forward voltage is -1.2 V at -2.5 A and 25°C, with reverse recovery time of 43–65 ns and Q_rr = 35–52 nC, enabling use in synchronous rectification and OR-ing topologies without external diodes.

Is IRF7233PBF RoHS-compliant and halogen-free?

Yes - the "PBF" suffix denotes lead-free (Pb-free) construction per RoHS Directive 2011/65/EU. The device is also halogen-free and complies with IPC-4101D/126 specifications for printed board materials, confirmed in Infineon's material declaration document ID 2021-00074.

IRF7233PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 12 V

Current - Continuous Drain (Id) @ 25°C:: 9.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 20mOhm @ 9.5A, 4.5V

Vgs(th) (Max) @ Id:: 600mV @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs:: 74 nC @ 5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 6000 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7233PBF FAQ

1.How can I place an order for IRF7233PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7233PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7233PBF reliable?

The price and inventory of IRF7233PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7233PBF is usually 5 days.

3.What payment methods are accepted for IRF7233PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7233PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7233PBF?

IRF7233PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7233PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7233PBF?

For technical support, including IRF7233PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7233PBF requirements.

6.How does Aetrix verify that IRF7233PBF is sourced from the original manufacturer or authorized distributors?

All IRF7233PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7233PBF meets industry standards.

7.What is the process for return or replacement of IRF7233PBF?

All IRF7233PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7233PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7233PBF part is unused and in its original packaging.

Return procedure for IRF7233PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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