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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7233TRPBF

Name: IRF7233TRPBF
Brand: Infineon Technologies
SKU: IRF7233TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7233TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7233TRPBF.pdf

Description:: MOSFET P-CH 12V 9.5A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF7233TRPBF from Infineon Technologies (formerly International Rectifier) is a P-Channel enhancement-mode MOSFET designed for high-efficiency load and battery management in portable electronics. It features -12 V V_DS, 9.5 A continuous drain current at -4.5 V V_GS, and ultra-low 20 mΩ R_DS(on) at V_GS = -4.5 V, enabling low conduction loss in compact DC-DC power switches and reverse-polarity protection circuits.

For engineers reviewing the IRF7233TRPBF datasheet, IRF7233TRPBF pinout, IRF7233TRPBF application, or IRF7233TRPBF equivalent, key selection criteria include its SO-8 package thermal performance, body diode recovery characteristics (t_rr = 43–65 ns), and gate charge profile (Q_g = 49–74 nC) for optimized switching efficiency in synchronous buck and OR-ing configurations.

Technical Context

This device operates as a logic-level P-Channel switch with gate threshold voltage (V_GS(th)) of -0.6 V typical, ensuring full enhancement at common system supply rails like -3.3 V or -5 V. Its SO-8 package uses a customized leadframe to reduce thermal resistance (R_θJA = 50 °C/W on 1-in² copper board), supporting higher continuous current at elevated ambient temperatures.

The integrated source-drain body diode exhibits V_SD = -1.2 V at -2.5 A and fast reverse recovery (Q_rr = 35–52 nC), making it suitable for freewheeling paths where bidirectional conduction and controlled turn-off are required-such as in hot-swap controllers and USB power delivery protection stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-12 V - Maximum blocking voltage for low-voltage battery-side switching
R_DS(on)	20 mΩ @ V_GS = -4.5 V - Enables ≤200 mW conduction loss at 10 A, critical for thermal budget in space-constrained PCBs
I_D (25°C)	±9.5 A - Continuous current rating supports high-current load switches without external heatsinking
Q_g	49–74 nC - Gate drive energy determines required driver strength and switching speed trade-offs
t_rr	43–65 ns - Fast body diode recovery minimizes switching losses and voltage spikes in inductive loads
R_θJA	50 °C/W - Thermal resistance enables 2.5 W dissipation at 25°C ambient before reaching 150°C junction limit
E_AS	60 mJ - Single-pulse avalanche capability provides robustness against inductive turn-off transients

Pinout & Package

IRF7233TRPBF is housed in a standard SO-8 surface-mount package with exposed drain pads for enhanced thermal performance. The package conforms to JEDEC MS-012AA and supports vapor phase, infrared, and wave soldering.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 7, 8	Drain (D)	Multiple parallel drain terminals reduce package inductance and improve current sharing across internal dies
6	Gate (G)	Single control input requiring <74 nC total charge for full enhancement; compatible with 3.3 V logic drivers
Source (S)	Source (S)	Common return path for load current; pins 1–5 and 7–8 are internally connected to drain, not source

Key Features

Feature	Design Value
Ultra-low R_DS(on)	20 mΩ @ -4.5 V V_GS - Reduces I²R losses by >40% vs. comparable -12 V P-channel MOSFETs in 1–3 A load-switch applications
Logic-level gate drive	V_GS(th) = -0.6 V - Ensures reliable turn-on with standard -3.3 V or -5 V system rails, eliminating need for level shifters
Enhanced SO-8 thermal design	R_θJA = 50 °C/W - Achieves 2.5 W power dissipation on minimal copper area, reducing board real estate vs. DPAK alternatives
Fast body diode	t_rr = 43 ns (typ), Q_rr = 35 nC - Limits reverse recovery overshoot in OR-ing and hot-swap circuits operating up to 1 MHz

Applications

Battery Protection Circuit

USB Type-C Power Delivery Switch

Use Scenario: Prevents reverse current flow and overvoltage damage during battery insertion or charger disconnection in single-cell Li-ion systems.

IC Role / Device Role / Timing Role: P-Channel high-side switch controlling battery connection path; operates in static on/off mode with no PWM timing constraints.

Use Value: 20 mΩ R_DS(on) limits voltage drop to <200 mV at 10 A, preserving battery runtime and minimizing thermal rise in sealed enclosures.

Use Scenario: Enables reversible power path control between host and peripheral in USB-C cables supporting 3 A/20 V PD profiles.

IC Role / Device Role / Timing Role: Bidirectional load switch managing V_BUS routing; body diode handles reverse current during plug orientation detection.

Use Value: Fast t_rr (43 ns) and low Q_rr (35 nC) suppress ringing and EMI during dynamic cable insertion events.

Hot-Swap Controller Back-End

Synchronous Buck High-Side Switch

Use Scenario: Provides inrush current limiting and fault isolation for 12 V intermediate bus modules in telecom line cards.

IC Role / Device Role / Timing Role: Controlled turn-on switch placed between input connector and downstream DC-DC converter; driven by dedicated hot-swap controller IC.

Use Value: 60 mJ E_AS withstands inductive kickback from upstream EMI filters during short-circuit events without failure.

Use Scenario: Serves as high-side switch in non-isolated buck converters powering FPGA core rails (e.g., 1.2 V @ 8 A).

IC Role / Device Role / Timing Role: Synchronously commutated P-channel switch; gate driven by bootstrap or charge-pump circuit to maintain V_GS < -4.5 V during duty cycle.

Use Value: Low Q_g (49 nC) reduces gate driver power consumption and allows faster switching transitions, improving light-load efficiency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7157DP-T1-GE3	R_DS(on) = 22 mΩ @ -4.5 V; Q_g = 55 nC; SO-8 package	Higher gate charge increases driver requirements; identical thermal footprint	Prefer when tighter R_DS(on) tolerance (±15%) is needed over IRF7233TRPBF's ±25%
DMG1012T-7	R_DS(on) = 28 mΩ @ -4.5 V; Q_g = 32 nC; SOT-23-6 package	Lower current rating (4.5 A) and smaller package limit power handling and thermal margin	Select only for space-constrained, low-current (<3 A) applications where SO-8 footprint is prohibitive

Compared with Si7157DP-T1-GE3 and DMG1012T-7, IRF7233TRPBF delivers the lowest R_DS(on) in SO-8 while maintaining industry-standard gate drive compatibility and avalanche ruggedness-making it optimal for 5–10 A battery and bus protection designs where thermal headroom and conduction loss are primary constraints.

Availability

IRF7233TRPBF is available at Aetrix Electronics and suitable for battery protection circuits, USB Type-C power delivery switches, hot-swap controller back-ends, and synchronous buck high-side switches requiring stable component supply and long-term industrial availability.

Supply support for IRF7233TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and continues to manufacture and support its legacy HEXFET® power MOSFET portfolio with full datasheet compliance and automotive-grade reliability testing.

The IRF7233TRPBF belongs to the HEXFET® P-Channel logic-level MOSFET product line, engineered specifically for high-efficiency, low-voltage load switching in portable and battery-powered systems where minimal conduction loss and compact layout are essential.

FAQ

Is IRF7233TRPBF RoHS-compliant and halogen-free?

Yes. IRF7233TRPBF is lead-free and RoHS-compliant per EU Directive 2011/65/EU, with halogen content below 900 ppm chlorine and 900 ppm bromine. The "PbF" suffix in the part number explicitly denotes lead-free packaging, and the device meets IPC/JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1) for unlimited floor life at ≤30°C/60% RH.

Can IRF7233TRPBF be used in linear regulation mode?

No. While it can operate in the linear region briefly, its SO-8 package lacks sufficient thermal mass for sustained linear operation. At 1 A and 5 V V_DS, power dissipation exceeds 5 W-far above its 2.5 W rated limit at 25°C ambient. It is specified and characterized only for switching applications with defined pulse widths and duty cycles.

What is the maximum safe operating frequency for IRF7233TRPBF in a 10 A switching application?

Maximum practical switching frequency is ~500 kHz, constrained by gate charge (Q_g = 49–74 nC) and body diode recovery (t_rr = 43–65 ns). At 10 A, switching losses dominate above this frequency; operation beyond 500 kHz requires active gate driving with <1 Ω source/sink impedance and careful layout to minimize parasitic inductance.

Does IRF7233TRPBF require a gate resistor for ESD protection?

No external gate resistor is required for ESD protection-the device has built-in gate oxide protection diodes rated for ±100 V HBM per JESD22-A114. However, a 10–47 Ω series gate resistor is recommended to dampen ringing and limit peak gate current during fast edge transitions, especially when driven by low-impedance logic sources.

IRF7233TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 12 V

Current - Continuous Drain (Id) @ 25°C:: 9.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 20mOhm @ 9.5A, 4.5V

Vgs(th) (Max) @ Id:: 600mV @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs:: 74 nC @ 5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 6000 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7233TRPBF FAQ

1.How can I place an order for IRF7233TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7233TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7233TRPBF reliable?

The price and inventory of IRF7233TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7233TRPBF is usually 5 days.

3.What payment methods are accepted for IRF7233TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7233TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7233TRPBF?

IRF7233TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7233TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7233TRPBF?

For technical support, including IRF7233TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7233TRPBF requirements.

6.How does Aetrix verify that IRF7233TRPBF is sourced from the original manufacturer or authorized distributors?

All IRF7233TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7233TRPBF meets industry standards.

7.What is the process for return or replacement of IRF7233TRPBF?

All IRF7233TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7233TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7233TRPBF part is unused and in its original packaging.

Return procedure for IRF7233TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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