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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7240PBF

Name: IRF7240PBF
Brand: Infineon Technologies
SKU: IRF7240PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7240PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7240PBF.pdf

Description:: MOSFET P-CH 40V 10.5A 8SO

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Product details

Overview

IRF7240PBF from International Rectifier is a P-Channel enhancement-mode HEXFET Power MOSFET in SO-8 package, rated for -40 V V_DSS, 0.015 Ω R_DS(on) at V_GS = -10 V, and -10.5 A continuous drain current at 25°C. It integrates a low-loss body diode (V_SD = -1.2 V @ -2.5 A) and supports high-efficiency battery disconnect and load switching in portable power systems.

For engineers reviewing the IRF7240PBF datasheet, IRF7240PBF pinout, IRF7240PBF application, or IRF7240PBF equivalent, key selection criteria include verified R_DS(on) temperature stability, SO-8 thermal resistance (50°C/W), gate charge profile (Q_g = 73 nC typ), and body diode reverse recovery performance (t_rr = 43 ns).

Technical Context

This device operates as a single N-channel depletion-free P-MOSFET with voltage-controlled conduction, designed for low-side switching in DC-DC converters, battery protection circuits, and hot-swap controllers. Its gate threshold voltage range (-1.0 to -3.0 V) enables reliable turn-on with standard logic-level drive, while the 17 S forward transconductance ensures fast switching response under load.

The SO-8 package features a customized leadframe for enhanced thermal dissipation and multi-die compatibility, supporting board-space-constrained designs. Electrical behavior is characterized across junction temperatures from -55°C to +150°C, with normalized R_DS(on) drift of ≤2.0× over full range and breakdown voltage temperature coefficient of -0.025 V/°C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	-40 V - Maximum blocking voltage before avalanche; defines safe operating range in 24 V and 36 V battery systems.
R_DS(on) max	0.015 Ω @ V_GS = -10 V - Enables <150 mW conduction loss at 10 A, critical for thermally constrained PCB layouts.
I_D cont	-10.5 A @ T_A = 25°C - Supports high-current load switching without external heatsinking on standard FR4.
Q_g	73 nC typ - Determines gate driver power requirement and switching speed in PWM applications.
t_rr	43 ns typ - Limits body diode reverse recovery losses during synchronous rectification or bidirectional switching.
R_θJA	50 °C/W - Thermal resistance from junction to ambient on 1-in² copper pad; sets maximum power derating slope (20 mW/°C).
V_GS(th)	-1.0 to -3.0 V - Ensures robust turn-on with 3.3 V or 5 V logic-level gate drivers without level-shifting.

Pinout & Package

IRF7240PBF uses the JEDEC MS-012AA-compliant SO-8 surface-mount package with exposed drain pads on pins 1–3 and 5–7, gate on pin 4, and source on pins 6 and 8. The leadframe design improves thermal transfer and supports multiple die configurations.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 5, 7	Drain (D)	High-current output node; electrically tied internally; requires thermal pad connection to PCB ground plane.
4	Gate (G)	Control input; sensitive to ESD; requires series resistor (≤10 Ω) to limit ringing and gate charge current.
6, 8	Source (S)	Return path for load current; connects to system ground or negative rail; forms cathode of integrated body diode.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	0.015 Ω at -10 V gate drive reduces I²R losses by >40% vs. legacy P-MOSFETs in 12 V load switches.
Optimized SO-8 thermal design	Custom leadframe lowers R_θJA to 50°C/W-enables 2.5 W continuous dissipation without forced air.
Fast body diode recovery	t_rr = 43 ns minimizes shoot-through risk and switching loss in half-bridge or OR-ing configurations.
Lead-free and RoHS-compliant	e1 marking confirms Pb-free terminations and halogen-free molding compound per JEDEC J-STD-020.

Applications

Battery Protection Circuit

Hot-Swap Controller

Use Scenario: Preventing reverse current flow and over-discharge in dual-battery backup systems for industrial IoT gateways.

IC Role / Device Role / Timing Role: Low-side P-MOSFET switch controlling battery isolation; activated only when main supply fails.

Use Value: 0.015 Ω R_DS(on) limits voltage drop to <150 mV at 10 A, preserving runtime and enabling precise voltage monitoring.

Use Scenario: Safe insertion/removal of pluggable modules in telecom line cards without disrupting backplane power.

IC Role / Device Role / Timing Role: Inrush current limiter and fault-isolation switch placed between input bus and module load.

Use Value: Fast t_rr (43 ns) and low Q_g (73 nC) allow microsecond-scale fault response and minimal energy dissipation during transient events.

DC-DC Converter Synchronous Rectifier

Load Switch for Portable Medical Devices

Use Scenario: Secondary-side rectification in isolated 24 V → 5 V flyback converters powering patient monitors.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode; driven complementary to primary-side MOSFET.

Use Value: Body diode V_SD = -1.2 V at -2.5 A reduces conduction loss by 35% vs. 0.45 V Schottky, improving efficiency above 85% at full load.

Use Scenario: Controlled power-up of ultrasound transducer arrays requiring sequential activation to avoid surge currents.

IC Role / Device Role / Timing Role: High-side load switch (with external level shifter) enabling precise enable timing and soft-start control.

Use Value: Gate threshold (-1.0 to -3.0 V) allows direct interface with 3.3 V microcontroller GPIO, eliminating discrete bias networks.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-Channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7157DP-T1-GE3	R_DS(on) = 0.012 Ω @ -10 V; higher Q_g (95 nC); SO-8 with different pinout (G/S/D layout differs).	Requires PCB redesign due to non-identical pin mapping; better R_DS(on) but slower switching.	Choose only if lower conduction loss outweighs gate drive complexity and layout change cost.
DMG2305UVT-7	R_DS(on) = 0.045 Ω @ -4.5 V; smaller 1.6 mm × 1.6 mm package; no thermal pad.	Limited to ≤3 A continuous loads; unsuitable for high-power battery management without derating.	Select for space-constrained, low-current applications where thermal performance is secondary to footprint size.

Compared with Si7157DP-T1-GE3 and DMG2305UVT-7, IRF7240PBF delivers optimal balance of low R_DS(on), proven SO-8 thermal reliability, and gate drive compatibility with 3.3 V/5 V controllers-making it preferred for industrial-grade battery and load management designs.

Availability

IRF7240PBF is available at Aetrix Electronics and suitable for battery protection circuits, hot-swap controllers, and DC-DC synchronous rectifiers requiring stable component supply and long-term manufacturing continuity.

Supply support for IRF7240PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

International Rectifier (now part of Infineon Technologies) specialized in high-performance power semiconductors, with leadership in MOSFET, IGBT, and driver IC technologies for industrial, automotive, and computing markets.

The HEXFET® product line was engineered specifically for high-efficiency power conversion and robust load switching, emphasizing ultra-low on-resistance, fast switching, and rugged thermal packaging for demanding embedded power applications.

FAQ

What is the maximum safe operating voltage for IRF7240PBF?

The absolute maximum drain-to-source voltage (V_DSS) is -40 V. Operation beyond this rating risks avalanche breakdown and permanent damage. Derating is recommended for reliability in noisy environments-designers should maintain ≥20% margin (i.e., ≤-32 V) in 24 V systems with transient spikes.

Can IRF7240PBF be used in high-frequency PWM applications?

Yes-its 73 nC total gate charge and 490 ns rise time support operation up to 500 kHz in hard-switched topologies. However, switching losses increase above 200 kHz; for >1 MHz designs, consider devices with lower Q_g and optimized Crss/Ciss ratios.

Does IRF7240PBF require a gate resistor?

A series gate resistor (4.7–10 Ω) is strongly recommended to dampen parasitic oscillation, limit peak gate current during fast transitions, and reduce EMI. Omitting it may cause erratic switching or gate oxide stress under high dV/dt conditions.

Is the body diode suitable for continuous conduction mode?

The integrated body diode supports continuous conduction in OR-ing and reverse-polarity protection, but its 1.2 V forward drop and 75 nC reverse recovery charge make it less efficient than external Schottky diodes above 2 A. Use only where simplicity outweighs efficiency loss.

IRF7240PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 10.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 15mOhm @ 10.5A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 110 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 9250 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7240PBF FAQ

1.How can I place an order for IRF7240PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7240PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7240PBF reliable?

The price and inventory of IRF7240PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7240PBF is usually 5 days.

3.What payment methods are accepted for IRF7240PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7240PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7240PBF?

IRF7240PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7240PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7240PBF?

For technical support, including IRF7240PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7240PBF requirements.

6.How does Aetrix verify that IRF7240PBF is sourced from the original manufacturer or authorized distributors?

All IRF7240PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7240PBF meets industry standards.

7.What is the process for return or replacement of IRF7240PBF?

All IRF7240PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7240PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7240PBF part is unused and in its original packaging.

Return procedure for IRF7240PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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