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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7241PBF

Name: IRF7241PBF
Brand: Infineon Technologies
SKU: IRF7241PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7241PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7241PBF.pdf

Description:: MOSFET P-CH 40V 6.2A 8SO

Quantity:: RFQ Add To RFQ list

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Inventory:5,547

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Product details

Overview

IRF7241PBF from International Rectifier is a P-channel enhancement-mode HEXFET® Power MOSFET in SO-8 package, rated for -40 V V_DS, 41 mΩ R_DS(on) at V_GS = -10 V and I_D = -6.2 A, with integrated body diode and -55 °C to +150 °C operating junction temperature. It serves as a low-side load switch in portable battery-powered systems requiring efficient reverse-polarity protection and power path control.

For engineers reviewing the IRF7241PBF datasheet, IRF7241PBF pinout, IRF7241PBF application, or IRF7241PBF equivalent, key selection criteria include verified R_DS(on) at -4.5 V gate drive, pulsed drain current capability (-25 A), thermal resistance (R_θJA = 50 °C/W), and SO-8 surface-mount compatibility with standard PCB layout practices.

Technical Context

This device uses trench-gate technology to achieve ultra-low on-resistance per die area while maintaining rugged avalanche-rated operation. Its P-channel configuration enables simple high-side or low-side switching without level-shifting circuitry when used with negative gate drive.

The integrated source-drain body diode exhibits V_SD = -1.2 V at I_S = -2.5 A and T_J = 25 °C, with reverse recovery time (t_rr) of 32–48 ns under specified di/dt conditions - critical for synchronous rectification and bidirectional power flow in compact DC-DC converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-40 V - Maximum blocking voltage for reverse-polarity protection circuits
R_DS(on)	41 mΩ @ V_GS = -10 V, I_D = -6.2 A - Enables <100 mW conduction loss at 2 A load current
I_D (continuous)	-6.2 A @ T_A = 25 °C - Supports sustained 5 W load switching on standard FR4 PCB
Q_g	53–80 nC - Determines gate driver strength requirement for <1 µs turn-on in 1 MHz SMPS
R_θJA	50 °C/W - Limits max ambient temperature to ~70 °C for full 2.5 W dissipation in SO-8 footprint
V_GS(th)	-1.0 to -3.0 V - Ensures reliable turn-on with logic-level gate drive down to -4.5 V
t_rr	32–48 ns - Allows use in 500 kHz–1 MHz synchronous buck topologies without excessive switching loss

Pinout & Package

SO-8 surface-mount package (JEDEC MS-012AA), 4.9 × 6.0 mm footprint, 1.27 mm lead pitch, with exposed drain pad for thermal enhancement. Pin 1 marked by notch or dot; leads are gull-wing, lead-free compliant.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 8	Drain (D)	Common high-current output node; internally paralleled for low-inductance conduction path
6	Gate (G)	Control input; requires -10 V for full enhancement; gate leakage ≤ ±100 nA at ±20 V
7	Source (S)	Reference terminal for gate drive and load return; connects to system ground or negative rail

Key Features

Feature	Design Value
Trench HEXFET® process	Delivers 41 mΩ R_DS(on) in SO-8 - 30% lower than planar P-MOSFETs of same size
Ultra-low gate charge	Q_gd = 3.9–5.9 nC - minimizes Miller-induced switching delay in high-frequency DC-DC stages
Integrated body diode	V_SD = -1.2 V @ -2.5 A - supports bidirectional current flow without external diode in USB OTG or battery backup paths
Lead-free and RoHS-compliant	Meets IPC-J-STD-020 moisture sensitivity level 1 - suitable for standard reflow profiles without baking

Applications

Reverse Polarity Protection

Battery Load Switch

Use Scenario: Input protection for 3.3 V/5 V USB-powered peripherals against accidental reverse connection.

IC Role / Device Role / Timing Role: Low-side P-MOSFET acting as series pass element controlled by microcontroller GPIO.

Use Value: Blocks reverse current at <100 µA leakage while adding only 41 mΩ series resistance - preserves >99% efficiency at 1 A.

Use Scenario: Controlled power-up sequencing for Li-ion battery-backed real-time clocks and SRAM.

IC Role / Device Role / Timing Role: Load switch enabling/disabling battery-to-system rail with soft-start via gate RC network.

Use Value: Prevents inrush current spikes and allows clean power domain isolation during sleep/wake transitions.

USB OTG Power Path

Industrial Sensor Node Power Management

Use Scenario: Bidirectional power routing between host and peripheral in USB On-The-Go configurations.

IC Role / Device Role / Timing Role: P-channel MOSFET managing VBUS sourcing/sinking direction based on ID pin state.

Use Value: Body diode forward voltage (-1.2 V) and fast t_rr (32 ns) enable efficient automatic direction sensing without external logic.

Use Scenario: Low-power sensor node powered by coin cell or energy harvester with duty-cycled MCU.

IC Role / Device Role / Timing Role: Ultra-low quiescent current load switch enabling sub-µA standby mode.

Use Value: Gate leakage ≤100 nA ensures <1 µA total shutdown current - extends battery life beyond 5 years.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7157DP-T1-GE3	R_DS(on) = 48 mΩ @ -4.5 V; Q_g = 45 nC; SO-8 package	Higher threshold spread (-0.5 to -1.5 V); less suitable for marginal gate drive	Prefer when lower gate charge outweighs slightly higher on-resistance
DMG2305UVT-7	R_DS(on) = 45 mΩ @ -4.5 V; V_DS = -20 V; SOT-23-6 package	Lower voltage rating limits use to 12 V systems; smaller footprint reduces thermal mass	Choose for space-constrained designs where -20 V rating suffices

Compared with Si7157DP-T1-GE3 and DMG2305UVT-7, the IRF7241PBF offers superior -40 V rating and tighter V_GS(th) distribution, making it optimal for industrial 24 V input protection and robust battery management where overvoltage margin and consistent turn-on behavior are critical.

Availability

IRF7241PBF is available at Aetrix Electronics and suitable for reverse polarity protection, battery load switching, USB OTG power path control, and industrial sensor node power management requiring stable component supply across production lifecycles.

Supply support for IRF7241PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

International Rectifier (now part of Infineon Technologies) specialized in power semiconductors, delivering high-efficiency MOSFETs, IGBTs, and driver ICs for industrial, automotive, and computing markets.

The HEXFET® Power MOSFET product line was engineered for high-current, low-loss switching in battery-powered and power management systems - emphasizing ruggedness, thermal performance, and gate-drive simplicity.

FAQ

What is the maximum continuous drain current at 70°C ambient?

The IRF7241PBF supports -4.9 A continuous drain current at T_A = 70 °C with V_GS = -10 V, limited by its 1.6 W power dissipation rating and 50 °C/W junction-to-ambient thermal resistance. This assumes mounting on a 1 in² copper pad; derating applies for smaller PCB copper areas.

Does this MOSFET require a gate resistor for stability?

A gate resistor (typically 10–100 Ω) is recommended to dampen ringing caused by gate loop inductance and MOSFET input capacitance (C_iss = 3220 pF). Without it, fast edge rates may induce oscillation during switching, especially when driven directly from microcontroller GPIO pins.

Can the body diode conduct continuously in reverse direction?

Yes - the intrinsic body diode conducts source-to-drain current (I_S) up to -2.5 A continuously at 25 °C, with V_SD = -1.2 V. However, power dissipation must remain within thermal limits; at -2.5 A, conduction loss is ~3 W, requiring heatsinking or forced airflow for sustained operation.

Is IRF7241PBF suitable for PWM motor control?

No - while capable of switching, its SO-8 package and 2.5 W P_D rating limit average current handling. Motor control demands higher pulsed current, avalanche energy rating, and thermal mass not provided here. Use TO-220 or DPAK packaged P-MOSFETs (e.g., IRF9540) for such applications.

IRF7241PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 6.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 41mOhm @ 6.2A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 80 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3220 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7241PBF FAQ

1.How can I place an order for IRF7241PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7241PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7241PBF reliable?

The price and inventory of IRF7241PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7241PBF is usually 5 days.

3.What payment methods are accepted for IRF7241PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7241PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7241PBF?

IRF7241PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7241PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7241PBF?

For technical support, including IRF7241PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7241PBF requirements.

6.How does Aetrix verify that IRF7241PBF is sourced from the original manufacturer or authorized distributors?

All IRF7241PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7241PBF meets industry standards.

7.What is the process for return or replacement of IRF7241PBF?

All IRF7241PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7241PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7241PBF part is unused and in its original packaging.

Return procedure for IRF7241PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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