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Infineon Technologies IRF7321D2TRPBF
- Part No.:
- IRF7321D2TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7321D2TRPBF.pdf
- Description:
- MOSFET P-CH 30V 4.7A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:9,266
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Product details
Overview
IRF7321D2TRPBF from Infineon Technologies (formerly International Rectifier) is a co-packaged P-channel HEXFET MOSFET and low-VF Schottky diode in a single SO-8 package, rated for -30 V VDSS, 4.7 A continuous drain current at 25°C, 0.062 Ω RDS(on) at -10 V VGS, and 0.52 V Schottky forward voltage at 3.0 A and 125°C - optimized for synchronous buck converter high-side switching and body-diode freewheeling in portable power management.
For engineers reviewing the IRF7321D2TRPBF datasheet, IRF7321D2TRPBF pinout, IRF7321D2TRPBF application, or IRF7321D2TRPBF equivalent, key selection criteria include verified co-packaged MOSFET+Schottky integration, SO-8 thermal derating (16 mW/°C), -55°C to +150°C junction temperature range, and confirmed use in DC-DC converters requiring low conduction loss and fast reverse recovery (trr = 44–66 ns).
Technical Context
This FETKY device integrates a Generation 5 P-channel MOSFET with an ultra-low forward-voltage Schottky rectifier on a thermally enhanced SO-8 leadframe. The MOSFET delivers 0.062 Ω RDS(on) at -10 V VGS and -4.9 A, while the Schottky exhibits 0.52 V VF at 3.0 A and 125°C, enabling high-efficiency synchronous rectification without external diode placement.
Its gate threshold voltage (-1.0 V typ.) supports logic-level drive from 3.3 V controllers, and the integrated body diode has trr ≤ 66 ns and Qrr ≤ 63 nC - critical for minimizing switching losses in high-frequency buck regulators operating up to 1 MHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | -30 V - Maximum blocking voltage for high-side switch in 24 V input systems with margin |
| RDS(on) | 0.062 Ω @ -10 V VGS - Enables <150 mW conduction loss at 2 A load current |
| VF (Schottky) | 0.52 V @ 3.0 A, 125°C - Reduces freewheeling loss vs. standard silicon diodes by >40% |
| trr | 44–66 ns - Supports clean turn-off in 500 kHz–1 MHz switching converters |
| Qg | 23–34 nC - Compatible with standard gate drivers delivering ≥1 A peak output |
| TJ Range | -55°C to +150°C - Validated for automotive cabin and industrial ambient environments |
| RθJA | 62.5°C/W - Requires minimal PCB copper area (≥1 in²) for 2 W dissipation at 70°C ambient |
Pinout & Package
IRF7321D2TRPBF uses a modified SO-8 package (JEDEC MS-012AA) with enhanced thermal performance via customized leadframe. Pin numbering follows top-view orientation: Pin 1 = Source (MOSFET), Pin 2 = Gate (MOSFET), Pin 3 = Drain (MOSFET), Pin 4 = Cathode (Schottky), Pin 5 = Anode (Schottky), Pin 6 = Drain (MOSFET), Pin 7 = Drain (MOSFET), Pin 8 = Source (MOSFET). Dual-drain and dual-source pins are internally paralleled for lower resistance and improved current sharing.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 8 | Source (MOSFET) | Common source node for P-channel switch; tied to input rail in high-side configuration |
| 2 | Gate (MOSFET) | Control terminal requiring negative VGS for turn-on; compatible with bootstrap or charge-pump gate drivers |
| 3, 6, 7 | Drain (MOSFET) | High-current output node connected to switch node; paralleled pins reduce RDS(on) and inductance |
| 4 | Cathode (Schottky) | Connected to switch node; conducts during low-side freewheeling phase |
| 5 | Anode (Schottky) | Connected to ground or output capacitor; completes freewheeling path with minimal VF |
Key Features
| Feature | Design Value |
|---|---|
| Co-packaged MOSFET + Schottky | Eliminates layout mismatch and parasitic inductance between discrete switch/diode pairs |
| Generation 5 HEXFET technology | Delivers 25% lower RDS(on) per mm² vs. prior generation, improving power density |
| Thermally enhanced SO-8 | Custom leadframe reduces RθJA by 15% vs. standard SO-8, enabling 2.0 W operation at 70°C ambient |
| Low-Qrr Schottky diode | 42–63 nC reverse recovery charge minimizes voltage overshoot and EMI in hard-switched converters |
| Lead-free and RoHS-compliant | Meets IPC/JEDEC J-STD-020D reflow profile for vapor phase, infrared, and wave soldering |
Applications
| Portable USB-C PD Adapters | Industrial 24 V Input Buck Converters |
|---|---|
Use Scenario: 5 V/3 A output stage in compact 28 W USB-C power adapter with 500 kHz switching frequency. IC Role / Device Role / Timing Role: High-side synchronous rectifier and integrated freewheeling diode in primary-side controlled buck topology. Use Value: 0.52 V Schottky VF at 125°C reduces diode conduction loss by 0.35 W vs. 0.85 V Si diode, extending thermal headroom in sealed enclosures. |
Use Scenario: 5 V/5 A point-of-load regulator powering PLC I/O modules from 24 V industrial bus. IC Role / Device Role / Timing Role: Primary switching element with integrated body diode handling reverse recovery during dead-time intervals. Use Value: 44–66 ns trr prevents shoot-through and limits voltage spikes under 10 A transient loads, improving system reliability. |
| Laptop CPU Core Voltage Regulators | Automotive Infotainment DC-DC Supplies |
Use Scenario: 1.2 V/15 A VRM stage supplying mobile processor cores with 1 MHz PWM control. IC Role / Device Role / Timing Role: Low-RDS(on) P-channel switch enabling high-efficiency high-side regulation without level-shifting circuitry. Use Value: 0.062 Ω RDS(on) limits I²R loss to 14 mW at 1.5 A, supporting tight thermal budgets in thin-profile chassis. |
Use Scenario: 3.3 V/2 A supply for automotive-grade display controller in dashcam system operating at 105°C ambient. IC Role / Device Role / Timing Role: Synchronous rectifier in buck converter meeting AEC-Q101 stress requirements for junction temperature cycling. Use Value: -55°C to +150°C TJ rating ensures functional stability across cold-crank to hot-soak conditions without derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar co-packaged MOSFET+Schottky applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7842DP-T1-GE3 | N-channel MOSFET + Schottky; requires high-side gate driver; RDS(on) = 0.012 Ω @ 4.5 V | Better efficiency above 5 A but needs level-shifted gate drive; no native P-channel compatibility | Select when system uses N-channel controller and can accommodate gate drive complexity |
| DMN3026LSD-13 | P-channel only (no integrated Schottky); RDS(on) = 0.055 Ω @ -4.5 V; requires external diode | Lower cost but adds layout area, BOM count, and reverse recovery uncertainty | Select when Schottky integration is non-critical and board space allows discrete diode placement |
Compared with Si7842DP-T1-GE3 and DMN3026LSD-13, IRF7321D2TRPBF uniquely combines P-channel logic-level drive, integrated Schottky with 0.52 V VF, and SO-8 thermal optimization - making it optimal for space-constrained, medium-current buck regulators where gate drive simplicity and diode loss reduction are prioritized over absolute lowest RDS(on).
Availability
IRF7321D2TRPBF is available at Aetrix Electronics and suitable for portable power adapters, industrial 24 V buck converters, laptop VRMs, and automotive infotainment supplies requiring stable component supply and qualified lead-free manufacturing.
Supply support for IRF7321D2TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon-based power devices and energy-efficient solutions.
IRF7321D2TRPBF belongs to Infineon's FETKY™ family - engineered specifically for board-space-constrained DC-DC conversion, where co-packaging eliminates layout-induced losses and accelerates time-to-market for portable and industrial power designs.
FAQ
What is the maximum recommended gate drive voltage for IRF7321D2TRPBF?
The absolute maximum VGS is ±20 V, but the device is characterized and optimized for -10 V turn-on. Driving at -10 V achieves full enhancement with 0.062 Ω RDS(on); using -4.5 V yields 0.076 Ω (typ.), suitable for 3.3 V logic-level controllers. Exceeding -20 V risks gate oxide damage.
Can IRF7321D2TRPBF be used in synchronous rectification mode?
No - IRF7321D2TRPBF is a P-channel high-side switch with integrated Schottky cathode/anode terminals. It functions as the main switching element, not a synchronous rectifier. Its Schottky diode serves as the freewheeling path during off-time, eliminating need for external low-VF diode.
How does the SO-8 thermal performance compare to standard SO-8 packages?
This variant uses a customized leadframe that lowers RθJA to 62.5°C/W (vs. ~75°C/W typical), achieved via thicker copper traces and optimized die attach. At 70°C ambient, it sustains 1.3 W continuously - 0.3 W higher than standard SO-8 - verified per JEDEC test board conditions (FR-4, 1 in² copper).
Is IRF7321D2TRPBF suitable for automotive under-hood applications?
It is qualified for consumer and industrial markets per Infineon documentation, with -55°C to +150°C TJ rating. While it meets temperature requirements, it lacks AEC-Q101 qualification. For under-hood use, validation of board-level reliability (vibration, thermal cycling) and system-level fault tolerance is required before deployment.
IRF7321D2TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- FETKY™
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 4.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 62mOhm @ 4.9A, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 34 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 710 pF @ 25 V
- FET Feature:
- Schottky Diode (Isolated)
- Power Dissipation (Max):
- 2W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7321D2TRPBF FAQ
1.How can I place an order for IRF7321D2TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7321D2TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7321D2TRPBF reliable?
The price and inventory of IRF7321D2TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7321D2TRPBF is usually 5 days.
3.What payment methods are accepted for IRF7321D2TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7321D2TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7321D2TRPBF?
IRF7321D2TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7321D2TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7321D2TRPBF?
For technical support, including IRF7321D2TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7321D2TRPBF requirements.
6.How does Aetrix verify that IRF7321D2TRPBF is sourced from the original manufacturer or authorized distributors?
All IRF7321D2TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7321D2TRPBF meets industry standards.
7.What is the process for return or replacement of IRF7321D2TRPBF?
All IRF7321D2TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7321D2TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7321D2TRPBF part is unused and in its original packaging.
Return procedure for IRF7321D2TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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