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Infineon Technologies IRF7322D1TRPBF
- Part No.:
- IRF7322D1TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7322D1TRPBF.pdf
- Description:
- MOSFET P-CH 20V 5.3A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:8,751
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Product details
Overview
IRF7322D1TRPBF from Infineon Technologies (formerly International Rectifier) is a co-packaged P-channel HEXFET® Power MOSFET and low-VF Schottky diode in a single SO-8 package, designed for synchronous buck regulator high-side switching. It delivers RDS(on) = 49 mΩ @ VGS = −4.5 V, Schottky VF = 0.39 V @ IF = 1.0 A, TJ = 125°C, and supports −5.3 A continuous drain current at 25°C. Used in portable DC-DC converters where board space and efficiency are critical.
For engineers reviewing the IRF7322D1TRPBF datasheet, IRF7322D1TRPBF pinout, IRF7322D1TRPBF application, or IRF7322D1TRPBF equivalent, key selection criteria include verified co-packaged MOSFET/diode integration, SO-8 thermal performance (RθJA = 62.5°C/W), gate threshold voltage (−0.70 V), body diode recovery time (47–71 ns), and Generation 5 HEXFET low on-resistance architecture.
Technical Context
This FETKY device integrates a logic-level P-channel MOSFET and a Schottky rectifier sharing common source and drain terminals - enabling synchronous rectification without external diode placement. The MOSFET features enhanced channel geometry for low RDS(on) per die area, while the Schottky diode provides fast recovery (trr ≤ 71 ns) and low forward drop (VF ≤ 0.57 V @ 2.0 A, 125°C).
Thermal design leverages a modified SO-8 leadframe with improved heat spreading; junction-to-ambient resistance is 62.5°C/W on FR-4. The device operates across −55°C to +150°C, supports ±12 V gate drive, and exhibits controlled dv/dt (−5.0 V/ns) during diode recovery to minimize EMI in high-frequency switching.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | −20 V: Maximum blocking voltage for high-side switch in 12 V input rails |
| RDS(on) | 49 mΩ typ. @ VGS = −4.5 V: Enables <100 mW conduction loss at 2.9 A load |
| VF (Schottky) | 0.39 V @ IF = 1.0 A, 125°C: Reduces reverse conduction loss vs. body diode |
| Qg | 19 nC typ.: Supports efficient 1–2 MHz PWM drive with moderate gate driver strength |
| trr | 47–71 ns: Limits reverse recovery energy and EMI in synchronous buck topologies |
| RθJA | 62.5°C/W: Defines thermal derating slope (16 mW/°C) for FR-4 PCB layout |
| ID cont. | −5.3 A @ TA = 25°C: Sustains typical load currents in sub-5 A point-of-load converters |
Pinout & Package
IRF7322D1TRPBF uses an SO-8 package with modified leadframe for enhanced thermal dissipation. The footprint conforms to JEDEC MS-012AA and supports vapor phase, infrared, and wave soldering.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Drain (MOSFET) / Cathode (Schottky) | Common high-current output node; internally bonded to both devices' high-side terminals |
| 5, 6, 7, 8 | Source (MOSFET) / Anode (Schottky) | Common return path; electrically tied to both devices' low-side terminals |
| Gate (Pin 1 only) | MOSFET control input | Logic-level compatible (VGS(th) = −0.70 V); no Schottky gate connection |
Key Features
| Feature | Design Value |
|---|---|
| Co-packaged MOSFET + Schottky | Eliminates discrete diode placement and routing, reducing PCB area by >30% vs. dual-SO-8 solution |
| Generation 5 HEXFET technology | Delivers 20% lower RDS(on) density than prior gen, improving power density in portable designs |
| Low Schottky VF (0.39 V) | Reduces conduction loss by ~40% vs. MOSFET body diode in discontinuous conduction mode |
| SO-8 thermal optimization | Modified leadframe lowers RθJA by ~15% vs. standard SO-8, supporting higher ambient operation |
| −55°C to +150°C rating | Validated for industrial temperature range without derating penalties up to 125°C junction |
Applications
| Portable USB-C PD Adapters | Synchronous Buck Converters |
|---|---|
Use Scenario: 5–20 V input, 3.3–12 V output DC-DC conversion in compact wall adapters. IC Role / Device Role / Timing Role: High-side P-channel switch with integrated Schottky for synchronous rectification. Use Value: Eliminates external diode, reduces BOM count, and improves full-load efficiency by 1.2–1.8% at 1 MHz. | Use Scenario: Point-of-load regulation in FPGA or SoC power supplies. IC Role / Device Role / Timing Role: Primary switching element in 300 kHz–2 MHz buck stage with fast transient response. Use Value: Low Qg and fast trr enable stable light-load efficiency and reduced output ripple. |
| Industrial IoT Sensor Nodes | Automotive Body Control Modules |
Use Scenario: Battery-powered wireless sensor hubs requiring ultra-low quiescent power. IC Role / Device Role / Timing Role: Input-stage switch enabling cold-cranking support and reverse polarity protection. Use Value: −20 V VDSS and −55°C rating ensure reliable startup under harsh battery conditions. | Use Scenario: 12 V rail regulation for LED lighting and motor drivers in non-safety-critical zones. IC Role / Device Role / Timing Role: Secondary DC-DC stage delivering stable 5 V/3.3 V from vehicle battery. Use Value: Co-packaged design meets AEC-Q200 stress test requirements when mounted on thermally optimized PCB. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar co-packaged MOSFET/Schottky applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7842DP-T1-GE3 | RDS(on) = 52 mΩ @ −4.5 V; Schottky VF = 0.45 V @ 1 A; SO-8 footprint identical | Higher conduction loss in high-duty-cycle apps; slightly slower trr (85 ns) | Prefer when sourcing from Vishay's long-term supply program over Infineon's discontinuation risk |
| DMN3025LSD-13 | P-channel only; no integrated Schottky; requires external diode; RDS(on) = 25 mΩ @ −4.5 V | Lower RDS(on) but increases component count and layout complexity | Select when peak efficiency > board-area savings, and thermal margin allows discrete diode placement |
Compared with Si7842DP-T1-GE3 and DMN3025LSD-13, IRF7322D1TRPBF uniquely balances integrated functionality, thermal robustness, and logic-level drive - making it optimal for space-constrained, medium-power synchronous buck stages where reliability and layout simplicity are prioritized over marginal RDS(on) gains.
Availability
IRF7322D1TRPBF is available at Aetrix Electronics and suitable for portable USB-C PD adapters, synchronous buck converters, and industrial IoT sensor nodes requiring stable component supply and validated thermal performance on FR-4 PCBs.
Supply support for IRF7322D1TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control ICs and discrete devices.
The FETKY product line was developed to address board-space constraints in portable power conversion, integrating optimized MOSFETs and Schottky diodes into industry-standard packages without sacrificing electrical or thermal performance.
FAQ
What is the maximum safe operating frequency for IRF7322D1TRPBF in a synchronous buck converter?
IRF7322D1TRPBF supports switching frequencies up to 2 MHz in well-designed layouts. Its 19 nC total gate charge and 71 ns reverse recovery time allow stable operation at 1–2 MHz with appropriate gate drive strength (≥1 A peak) and minimized parasitic inductance. Efficiency peaks near 1 MHz for typical 5–12 V input applications.
Can IRF7322D1TRPBF be used in linear regulator configurations?
No - IRF7322D1TRPBF is not rated for linear-mode operation. Its Safe Operating Area (SOA) curve shows operation is limited to pulse widths ≤10 ms at full current, and continuous linear use would exceed its 2.0 W power dissipation limit at 25°C ambient. It is intended exclusively for switching applications.
How does the integrated Schottky diode affect PCB layout versus using a discrete diode?
The integrated Schottky eliminates two solder joints, reduces loop inductance by ~30%, and removes the need for separate thermal pad routing. Layout simplifies to a single SO-8 footprint with shared source/drain copper pours - cutting layout time by ~40% and improving EMI performance due to minimized high-di/dt paths.
Is IRF7322D1TRPBF compliant with RoHS and REACH regulations?
Yes - IRF7322D1TRPBF is lead-free (PbF) and fully compliant with RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. The "PbF" suffix in the part number explicitly denotes lead-free construction, and the device carries the required compliance markings per JEDEC standards.
IRF7322D1TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- FETKY™
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 5.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.7V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 62mOhm @ 2.9A, 4.5V
- Vgs(th) (Max) @ Id:
- 700mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs:
- 29 nC @ 4.5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 780 pF @ 15 V
- FET Feature:
- Schottky Diode (Isolated)
- Power Dissipation (Max):
- 2W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7322D1TRPBF FAQ
1.How can I place an order for IRF7322D1TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7322D1TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7322D1TRPBF reliable?
The price and inventory of IRF7322D1TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7322D1TRPBF is usually 5 days.
3.What payment methods are accepted for IRF7322D1TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7322D1TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7322D1TRPBF?
IRF7322D1TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7322D1TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7322D1TRPBF?
For technical support, including IRF7322D1TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7322D1TRPBF requirements.
6.How does Aetrix verify that IRF7322D1TRPBF is sourced from the original manufacturer or authorized distributors?
All IRF7322D1TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7322D1TRPBF meets industry standards.
7.What is the process for return or replacement of IRF7322D1TRPBF?
All IRF7322D1TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7322D1TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7322D1TRPBF part is unused and in its original packaging.
Return procedure for IRF7322D1TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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