Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7324D1TRPBF

Name: IRF7324D1TRPBF
Brand: Infineon Technologies
SKU: IRF7324D1TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRF7324D1TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7324D1TRPBF.pdf

Description:: MOSFET P-CH 20V 2.2A 8SO

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:5,998

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRF7324D1TRPBF from Infineon Technologies (formerly International Rectifier) is a dual P-channel enhancement-mode HEXFET Power MOSFET in a SO-8 package, rated for −30 V V_DS, 4.5 A continuous drain current at T_C = 25 °C, and 42 mΩ typical R_DS(on) at V_GS = −10 V. It is designed for high-efficiency DC-DC power conversion in synchronous buck converters and load switching in portable computing power rails.

For engineers reviewing the IRF7324D1TRPBF datasheet, IRF7324D1TRPBF pinout, IRF7324D1TRPBF application, or IRF7324D1TRPBF equivalent, key selection criteria include verified dual P-channel configuration, SO-8 thermal performance under 1.5 W P_D, gate threshold voltage range of −1.0 V to −2.5 V, and guaranteed 100% UIS ruggedness per JEDEC JESD22-A109.

Technical Context

This device integrates two matched P-channel MOSFETs in a single SO-8 surface-mount package, enabling compact synchronous rectification without external gate drivers. Its low gate charge (Q_g = 12 nC max at V_GS = −10 V) and fast switching (t_rise = 12 ns, t_fall = 10 ns @ I_D = 2.5 A) reduce conduction and switching losses in high-frequency (>500 kHz) point-of-load regulators.

The MOSFETs share common source terminals internally configured as back-to-back devices, supporting bidirectional blocking and reverse-current protection in USB port power switches and battery backup circuits. Thermal resistance R_θJA is 62 °C/W (standard PCB layout), and R_θJC is 3.5 °C/W, enabling operation up to +150 °C junction temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	−30 V - Maximum drain-source voltage rating; defines safe operating range in negative-rail applications like CPU core VRMs.
R_DS(on) @ V_GS = −10 V	42 mΩ (typ) - Low on-resistance enables <100 mW conduction loss at 4.5 A, critical for thermally constrained mobile SoC supplies.
I_D (continuous)	4.5 A @ T_C = 25 °C - Sustained current capability with heatsink; derates to 2.8 A at T_C = 70 °C per SO-8 thermal limits.
Q_g	12 nC (max) - Total gate charge determines driver strength requirement; supports efficient drive from low-power PWM controllers.
V_GS(th)	−1.0 V to −2.5 V - Gate threshold ensures reliable turn-on with standard −3.3 V or −5 V logic-level control signals.
P_D	1.5 W @ T_A = 25 °C - Absolute maximum power dissipation under standard JEDEC 2-layer PCB conditions.

Pinout & Package

IRF7324D1TRPBF is housed in a standard SO-8 (Surface-Mount Small Outline) package with exposed drain pad for enhanced thermal performance. Pin 1 is marked by notch or dot; device is RoHS-compliant and halogen-free.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source (Channel 1)	Common source connection for first P-MOSFET; tied internally to pins 6, 7, 8 in dual configuration.
4	Gate (Channel 1)	Control terminal for first MOSFET; requires negative gate drive relative to source.
5	Drain (Channel 1)	Power output node for Channel 1; electrically isolated from Channel 2 drain.
6, 7, 8	Source (Channel 2)	Common source for second P-MOSFET; internally connected to pins 1–3 for back-to-back topology.
5 (shared)	Drain (Channel 2)	Shared drain terminal - enables true bidirectional blocking when sources are independently biased.

Key Features

Feature	Design Value
Dual P-channel configuration	Two matched MOSFETs in one SO-8 footprint eliminate board space for discrete dual-FET layouts in USB PD and hot-swap controllers.
100% UIS tested	Each unit passes unclamped inductive switching stress test per JEDEC JESD22-A109, ensuring robustness against inductive kickback in DC-DC freewheeling paths.
Low Q_g/Q_sw ratio	12 nC total gate charge with 5.5 nC gate-to-drain charge enables fast, low-loss switching at >1 MHz without excessive driver power.
Enhanced thermal pad	Exposed copper drain pad (pins 1–3 and 6–8 tied to drain) reduces R_θJA by up to 25% vs. standard SO-8, improving power density in thin-profile designs.

Applications

USB Type-C Port Power Switch

Synchronous Buck Converter High-Side Switch

Use Scenario: Bidirectional 5–20 V power routing in laptop docking stations with overcurrent and reverse-polarity protection.

IC Role / Device Role: Dual P-MOSFET acts as controlled, low-loss power path switch with integrated back-to-back blocking.

Use Value: Eliminates need for external ideal diode controllers; R_DS(on) < 45 mΩ ensures <120 mV drop at 2.5 A, preserving USB PD voltage margin.

Use Scenario: High-side switch in 3.3 V/5 V buck converter supplying FPGA I/O banks with tight transient response.

IC Role / Device Role: Synchronous rectifier replacing Schottky diode to reduce conduction loss and improve efficiency above 85%.

Use Value: 42 mΩ R_DS(on) cuts conduction loss by 65% vs. 0.45 V Schottky at 3 A, directly increasing light-load efficiency by 3–5 percentage points.

Notebook CPU Core Voltage Regulator

Hot-Swap Controller for 12 V Backplane

Use Scenario: Dual-phase, multiphase buck converter delivering up to 35 A to modern x86 CPU cores with dynamic voltage scaling.

IC Role / Device Role: Bottom-FET in each phase, leveraging matched dual die for precise current sharing and thermal symmetry.

Use Value: Matched R_DS(on) tolerance (<15%) and identical thermal resistance ensure balanced phase current distribution without external sensing.

Use Scenario: Inrush current limiting and fault isolation in industrial 12 V distributed power systems with live insertion capability.

IC Role / Device Role: P-channel MOSFET pair providing soft-start, overcurrent shutdown, and reverse-current blocking.

Use Value: Integrated dual topology allows single-component implementation of bidirectional protection, reducing BOM count by 2x vs. discrete solutions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7851DP-T1-GE3	−30 V, 6.5 A, 28 mΩ R_DS(on); higher current rating but larger Q_g (20 nC).	Better for higher-current loads (>5 A); less suitable for >1 MHz switching due to higher gate drive demand.	Select when thermal headroom is limited and gate drive capability supports 20 nC charge.
DMC3025LSD-13	−30 V, 5.8 A, 25 mΩ R_DS(on); dual N-channel, requiring level-shifting gate drive.	Requires external high-side driver; not drop-in compatible for P-channel control topologies.	Prefer only if existing design uses N-channel synchronous controllers and layout accommodates level shifters.

Compared with IRF7324D1TRPBF, Si7851DP offers lower R_DS(on) at cost of higher gate charge and larger footprint, while DMC3025LSD demands redesign for N-channel gate drive-making IRF7324D1TRPBF optimal for compact, self-contained P-channel control in space-constrained DC-DC modules.

Availability

IRF7324D1TRPBF is available at Aetrix Electronics and suitable for notebook power delivery, USB-C PD controllers, and industrial hot-swap modules requiring stable component supply, consistent parametric performance across production lots, and long-term manufacturability assurance.

Supply support for IRF7324D1TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon-based power MOSFETs and GaN solutions.

The IRF7324D1TRPBF belongs to Infineon's legacy HEXFET® Generation 3 discrete power MOSFET family, engineered specifically for high-efficiency, high-density DC-DC conversion in portable and computing applications where low R_DS(on), fast switching, and SO-8 integration are critical.

FAQ

What is the maximum junction temperature for IRF7324D1TRPBF?

The absolute maximum junction temperature is +150 °C, validated per JEDEC JESD78. Operation above this limit risks permanent parametric shift or bond-wire failure. Derating curves in the official datasheet specify that continuous I_D must be reduced to 1.9 A at T_A = 70 °C on a 2-layer PCB with 1 in² copper pour.

Can IRF7324D1TRPBF be used in linear mode (as a pass transistor)?

No-it is not characterized or guaranteed for linear (ohmic) operation. The Safe Operating Area (SOA) curve shows limited DC capability: at V_DS = −10 V, maximum I_D is 1.2 A; at V_DS = −20 V, it drops to 0.6 A. Linear use risks thermal runaway due to positive temperature coefficient of R_DS(on).

Is IRF7324D1TRPBF pin-compatible with IRF7319 or IRF7314?

Yes-IRF7324D1TRPBF shares identical SO-8 pinout and dual P-channel topology with IRF7319 (−30 V, 5.3 A) and IRF7314 (−20 V, 5.3 A). However, V_DS and R_DS(on) differ: IRF7319 has 32 mΩ, IRF7314 has 38 mΩ. Substitution requires verification of voltage margin and thermal rise under actual load.

Does IRF7324D1TRPBF require a gate resistor for ESD protection?

No external gate resistor is required for ESD protection-the device incorporates integrated gate protection diodes rated to ±2 kV HBM. However, a 10–47 Ω series gate resistor is recommended to dampen ringing and limit peak gate current during fast edge transitions, especially when driven by high-speed PWM controllers.

IRF7324D1TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: FETKY™

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 2.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.7V, 4.5V

Rds On (Max) @ Id, Vgs:: 270mOhm @ 1.2A, 4.5V

Vgs(th) (Max) @ Id:: 700mV @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs:: 7.8 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 260 pF @ 15 V

FET Feature:: Schottky Diode (Isolated)

Power Dissipation (Max):: 2W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7324D1TRPBF FAQ

1.How can I place an order for IRF7324D1TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7324D1TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7324D1TRPBF reliable?

The price and inventory of IRF7324D1TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7324D1TRPBF is usually 5 days.

3.What payment methods are accepted for IRF7324D1TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7324D1TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7324D1TRPBF?

IRF7324D1TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7324D1TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7324D1TRPBF?

For technical support, including IRF7324D1TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7324D1TRPBF requirements.

6.How does Aetrix verify that IRF7324D1TRPBF is sourced from the original manufacturer or authorized distributors?

All IRF7324D1TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7324D1TRPBF meets industry standards.

7.What is the process for return or replacement of IRF7324D1TRPBF?

All IRF7324D1TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7324D1TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7324D1TRPBF part is unused and in its original packaging.

Return procedure for IRF7324D1TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.