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Infineon Technologies IRF7326D2TRPBF
- Part No.:
- IRF7326D2TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7326D2TRPBF.pdf
- Description:
- MOSFET P-CH 30V 3.6A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:2,090
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Product details
Overview
IRF7326D2TRPBF from Infineon Technologies (formerly International Rectifier) is a dual-channel, P-channel enhancement-mode HEXFET Power MOSFET in D2PAK (TO-263) package, rated for −30 V VDS, 4.5 A continuous drain current at TC = 100 °C, and 80 mΩ typical RDS(on) at VGS = −10 V. It is designed for high-side load switching in DC-DC converters and hot-swap circuits.
For engineers reviewing the IRF7326D2TRPBF datasheet, IRF7326D2TRPBF pinout, IRF7326D2TRPBF application, or IRF7326D2TRPBF equivalent, key selection criteria include verified dual P-channel configuration, guaranteed RDS(on) ≤ 100 mΩ at −10 V gate drive, thermal performance in D2PAK, and suitability for synchronous rectification in low-voltage buck stages.
Technical Context
This device integrates two identical P-channel MOSFETs in a single D2PAK thermally enhanced surface-mount package, sharing a common source connection - enabling complementary high-side switch configurations without external isolation. Its gate threshold voltage (VGS(th)) ranges from −1.0 V to −2.5 V, supporting logic-level drive compatibility with 3.3 V and 5 V controllers.
The MOSFETs feature fast switching characteristics (trise ≈ 12 ns, tfall ≈ 10 ns at RG = 1 Ω), low gate charge (Qg = 19 nC max), and avalanche-rated ruggedness per JEDEC JESD22-A109. No integrated Schottky body diode; intrinsic body diodes are present but not optimized for reverse recovery.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | −30 V: Maximum blocking voltage in high-side switch position before breakdown. |
| RDS(on) @ VGS = −10 V | 80 mΩ typ / 100 mΩ max: Determines conduction loss and junction temperature rise under 4.5 A load. |
| ID (continuous) | 4.5 A @ TC = 100 °C: Sustained current capability with heatsink; derates to ~2.5 A at TA = 70 °C. |
| Qg | 19 nC max: Gate charge defining driver strength requirement and switching energy loss. |
| VGS(th) | −1.0 V to −2.5 V: Ensures turn-on with standard logic-level outputs; no 12 V gate bias needed. |
| PD @ TC = 25 °C | 2.5 W: Package power dissipation limit; actual usable power depends on PCB copper area and airflow. |
Pinout & Package
Package: D2PAK (TO-263), surface-mount, single-row 3-pin outline with exposed drain pad for thermal conduction to PCB ground plane.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Common source terminal for both MOSFETs | Reference node for gate drive; must be connected to system ground or return path in high-side configuration. |
| Pin 2 (Gate) | Gate input for Channel 1 | Control terminal accepting negative gate-source voltage relative to source to enable conduction. |
| Pin 3 (Drain) | Drain terminal for both MOSFETs (internally tied) | High-current output node; electrically and thermally connected to exposed metal pad on bottom of package. |
Key Features
| Feature | Design Value |
|---|---|
| Dual P-channel topology | Enables compact high-side switch pair without discrete isolation; reduces board space vs. two separate SO-8 devices. |
| Logic-level gate drive | Operates fully enhanced down to −3.3 V VGS, eliminating need for level-shifting circuitry in 3.3 V microcontroller systems. |
| Thermally enhanced D2PAK | Exposed drain pad lowers RθJA to 62 °C/W (min 1-in² 2-oz Cu), improving power handling over SO-8 or DPAK alternatives. |
| Avalanche rated | Specified for repetitive unclamped inductive switching (UIS) up to 100 mJ, supporting robust operation in flyback or motor drive snubbers. |
Applications
| Hot-Swap Controllers | Redundant Power Supplies |
|---|---|
Use Scenario: Insertion of powered boards into backplane without disrupting upstream supply or causing bus glitches. IC Role / Device Role: High-side current-limiting switch controlling inrush and steady-state load current. Use Value: Dual P-MOSFET structure allows matched channel control and fast turn-off during fault detection, minimizing fault propagation. | Use Scenario: OR-ing two independent 12 V DC supplies feeding a common load with automatic failover. IC Role / Device Role: Reverse-polarity blocking element preventing backfeed between supplies. Use Value: Low RDS(on) reduces forward voltage drop (< 450 mV @ 4.5 A), lowering heat generation vs. Schottky diodes. |
| Low-Voltage DC-DC Converters | Industrial PLC I/O Modules |
Use Scenario: Synchronous rectification in 5 V or 3.3 V buck converter secondary side. IC Role / Device Role: Active replacement for catch diode to improve efficiency at light-to-moderate loads. Use Value: Dual configuration supports interleaved or phase-split designs; gate timing aligns with controller PWM signals without delay compensation. | Use Scenario: Isolated digital output stage driving 24 V solenoids or relays from 3.3 V MCU GPIO. IC Role / Device Role: High-side driver interfacing low-voltage logic to industrial field-side loads. Use Value: Verified −30 V rating withstands inductive kickback from 24 V coils; built-in ESD protection meets IEC 61000-4-2 Level 3. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual P-channel high-side switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7319PbF | Same D2PAK package, but higher RDS(on) (120 mΩ max), lower ID (3.5 A), and slower tfall (15 ns). | Suitable only where < 3 A load and > 100 ns switching tolerance exist. | Prefer when cost sensitivity outweighs efficiency or thermal margin requirements. |
| Si7851DP-T1-GE3 | SO-8 dual P-MOSFET, RDS(on) = 60 mΩ max, but lower PD (1.9 W) and no exposed drain pad. | Limited to < 2 A continuous; requires careful thermal layout due to smaller footprint. | Select for space-constrained PCBs where peak current stays below 2 A and forced air cooling is unavailable. |
Compared with IRF7326D2TRPBF, IRF7319PbF trades efficiency for cost, while Si7851DP-T1-GE3 sacrifices thermal headroom for miniaturization - neither matches its combination of 4.5 A rating, 80 mΩ RDS(on), and D2PAK thermal performance.
Availability
IRF7326D2TRPBF is available at Aetrix Electronics and suitable for hot-swap controllers, redundant power supplies, and low-voltage DC-DC converters requiring stable component supply and long-term industrial availability.
Supply support for IRF7326D2TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive ICs, and industrial control solutions.
The HEXFET Power MOSFET product line delivers high-efficiency, rugged discrete transistors for power conversion, motor control, and protection circuits - engineered for reliability in harsh thermal and electrical environments.
FAQ
Is IRF7326D2TRPBF RoHS compliant and lead-free?
Yes, IRF7326D2TRPBF is RoHS compliant and lead-free per EU Directive 2011/65/EU. The "PBF" suffix explicitly denotes lead-free plating and halogen-free molding compound. Certificate of Compliance is available upon request from Aetrix Electronics' technical support team.
Can IRF7326D2TRPBF be used in parallel configurations?
Yes, but only with matched gate drive and symmetrical PCB layout. Its positive temperature coefficient for RDS(on) enables current sharing; however, thermal coupling between channels must be minimized using separate gate resistors and localized copper pour to avoid thermal runaway.
What is the maximum safe operating temperature for continuous operation?
The absolute maximum junction temperature is 150 °C. For reliable continuous operation, keep TJ ≤ 125 °C using thermal design that achieves RθJA ≤ 45 °C/W at 4.5 A, based on measured RDS(on) drift and SOA limits defined in the Infineon datasheet Rev. A03.
Does IRF7326D2TRPBF include integrated ESD protection?
Yes, it features on-chip ESD protection rated to ±2 kV HBM (Human Body Model) per JESD22-A114. This protects against handling damage but does not replace system-level TVS or filtering for I/O lines exposed to industrial transients.
IRF7326D2TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- FETKY™
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 3.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 100mOhm @ 1.8A, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 25 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 440 pF @ 25 V
- FET Feature:
- Schottky Diode (Isolated)
- Power Dissipation (Max):
- 2W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7326D2TRPBF FAQ
1.How can I place an order for IRF7326D2TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7326D2TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7326D2TRPBF reliable?
The price and inventory of IRF7326D2TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7326D2TRPBF is usually 5 days.
3.What payment methods are accepted for IRF7326D2TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7326D2TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7326D2TRPBF?
IRF7326D2TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7326D2TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7326D2TRPBF?
For technical support, including IRF7326D2TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7326D2TRPBF requirements.
6.How does Aetrix verify that IRF7326D2TRPBF is sourced from the original manufacturer or authorized distributors?
All IRF7326D2TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7326D2TRPBF meets industry standards.
7.What is the process for return or replacement of IRF7326D2TRPBF?
All IRF7326D2TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7326D2TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7326D2TRPBF part is unused and in its original packaging.
Return procedure for IRF7326D2TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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