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Infineon Technologies IRF7342D2PBF
- Part No.:
- IRF7342D2PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
IRF7342D2PBF.pdf
- Description:
- MOSFET P-CH 55V 3.4A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:2,933
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Product details
Overview
IRF7342D2PBF from Infineon Technologies (formerly International Rectifier) is a dual n-channel enhancement-mode Power MOSFET in D2PAK (TO-263) package, rated for 55 V VDS, 4.7 A continuous drain current at TC = 25°C, and 28 mΩ typical RDS(on) at VGS = 10 V. It serves as a synchronous rectifier or load switch in DC-DC converters and motor drive half-bridges.
For engineers reviewing the IRF7342D2PBF datasheet, IRF7342D2PBF pinout, IRF7342D2PBF application, or IRF7342D2PBF equivalent, key selection criteria include its dual n-channel configuration, low gate charge (Qg = 12 nC), fast switching capability (tfall = 15 ns), and suitability for high-frequency PWM control in compact power stages.
Technical Context
This device integrates two independent n-channel HEXFETs in a single D2PAK thermally enhanced surface-mount package. Each channel features a 55 V VDS rating, 28 mΩ RDS(on) at 10 V gate drive, and 12 nC total gate charge - enabling efficient operation in 12–24 V input systems with switching frequencies up to 1 MHz.
The dual configuration supports common-source or half-bridge topologies without external isolation. Its logic-compatible gate threshold (VGS(th) = 1.0–2.0 V) allows direct interfacing with 3.3 V or 5 V microcontrollers, while the 175°C maximum junction temperature supports industrial ambient conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 55 V - Maximum drain-to-source blocking voltage; defines upper limit of DC bus voltage in buck or half-bridge applications. |
| RDS(on) @ VGS=10 V | 28 mΩ (typ) - Conduction loss contributor; determines I²R heating at 4.7 A continuous current. |
| ID (continuous) | 4.7 A @ TC = 25°C - Thermal-limited output current; requires heatsinking above 70°C case temperature. |
| Qg | 12 nC - Total gate charge; sets minimum driver strength requirement and influences switching transition time. |
| tfall | 15 ns - Drain fall time with 10 Ω gate resistor; enables sub-100 ns switching transitions in optimized layouts. |
| VGS(th) | 1.0–2.0 V - Gate threshold range; ensures turn-on with standard logic-level MCU outputs without level-shifting. |
Pinout & Package
IRF7342D2PBF uses a 8-pin D2PAK (TO-263) package with exposed drain pad for thermal dissipation. Pin 1–4 correspond to Channel 1 source, gate, drain, and drain; Pins 5–8 correspond to Channel 2 source, gate, drain, and drain - configured as dual independent MOSFETs sharing no internal connection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (S1) | Channel 1 Source | Reference node for Channel 1; connects to ground or low-side return path in half-bridge. |
| Pin 2 (G1) | Channel 1 Gate | Control input for Channel 1; requires <2.0 V to remain off, >3.3 V for full enhancement. |
| Pins 3 & 4 (D1) | Channel 1 Drain (dual pins) | High-current output node; electrically tied internally; soldered to PCB copper pour for thermal conduction. |
| Pin 5 (S2) | Channel 2 Source | Independent reference for Channel 2; may be tied to different potential than S1 in floating configurations. |
| Pin 6 (G2) | Channel 2 Gate | Isolated control input; enables independent timing or phase-shifted drive of second channel. |
| Pins 7 & 8 (D2) | Channel 2 Drain (dual pins) | Second high-current output; supports dual-switch topologies like synchronous buck + OR-ing or dual-phase output. |
Key Features
| Feature | Design Value |
|---|---|
| Dual n-channel configuration | Enables compact half-bridge or dual-output DC-DC stages without discrete pairing or layout mismatch. |
| Low RDS(on) (28 mΩ) | Reduces conduction loss by >35% vs. comparable 55 V single-channel MOSFETs in same package footprint. |
| Logic-level gate drive | Eliminates need for gate driver ICs when controlled by 3.3 V/5 V MCUs or FPGAs - simplifies BOM and layout. |
| Thermally enhanced D2PAK | Exposed drain pad lowers RθJC to 3.5°C/W, supporting 4.7 A continuous operation with minimal heatsink area. |
Applications
| DC-DC Synchronous Buck Converter | Brushless DC Motor Half-Bridge |
|---|---|
Use Scenario: 12 V input to 3.3 V/5 V point-of-load regulation in networking equipment. IC Role / Device Role: High-side and low-side synchronous rectifiers replacing Schottky diodes. Use Value: Achieves >92% efficiency at 3 A load by eliminating 0.4 V diode forward drop and reducing switching losses via matched gate timing. | Use Scenario: 24 V three-phase BLDC driver for HVAC blowers and industrial fans. IC Role / Device Role: Low-side switches in each half-bridge leg, driven by gate driver ICs. Use Value: Enables 10 kHz PWM operation with <50 ns dead-time margin due to fast tfall and low Qg. |
| Hot-Swap OR-ing Circuit | USB-C Power Delivery Load Switch |
Use Scenario: Redundant 12 V power inputs in telecom line cards with automatic failover. IC Role / Device Role: Back-to-back n-channel MOSFETs used as ideal diodes for reverse-current blocking. Use Value: Provides <15 mΩ effective forward resistance per path, cutting power loss by 60% vs. discrete diode solutions. | Use Scenario: 5–20 V programmable USB-C PD port with overcurrent and thermal protection. IC Role / Device Role: Single-channel used as main load switch; second channel reserved for fault monitoring or auxiliary rail. Use Value: Supports 4.7 A continuous current with integrated thermal shutdown (TJ > 150°C) and fast response to short-circuit events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual n-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7313PBF | Same D2PAK package, but 30 V VDS, 6.2 A ID, 20 mΩ RDS(on); lower voltage rating. | Better suited for 5–12 V systems (e.g., USB PD, PoE); not rated for 24 V bus transients. | Select when operating below 30 V and prioritizing lower RDS(on) over voltage margin. |
| Si7852DP-T1-GE3 | Vishay dual n-channel, 60 V, 4.8 A, 24 mΩ; SO-8 package, higher RθJA (62°C/W). | Limited to lower-power applications (<2 W dissipation); unsuitable for >1 A continuous without forced air. | Choose only for space-constrained PCBs where D2PAK mounting is impractical and thermal budget permits. |
Compared with IRF7342D2PBF, IRF7313PBF trades voltage headroom for lower conduction loss in low-voltage rails, while Si7852DP offers smaller footprint at the cost of thermal performance and peak current capability.
Availability
IRF7342D2PBF is available at Aetrix Electronics and suitable for DC-DC converters, BLDC motor drives, hot-swap OR-ing circuits, and USB-C power delivery load switching requiring stable component supply across production volumes.
Supply support for IRF7342D2PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies acquired International Rectifier in 2015 and continues its legacy of high-performance power semiconductors with rigorous qualification and automotive-grade reliability testing.
The HEXFET family, including IRF7342D2PBF, was designed specifically for high-efficiency, high-frequency power conversion in industrial, computing, and consumer power supplies - emphasizing low gate charge, fast switching, and robust avalanche ruggedness.
FAQ
What is the maximum safe operating temperature for IRF7342D2PBF?
The absolute maximum junction temperature is 175°C. Derating begins at 25°C ambient: continuous drain current drops linearly to zero at 175°C junction. For reliable 4.7 A operation, case temperature must stay ≤70°C with adequate PCB copper area or heatsink attachment to the exposed drain pad.
Can IRF7342D2PBF be used in a back-to-back configuration for AC switching?
No - IRF7342D2PBF is a unidirectional n-channel MOSFET with intrinsic body diode. It cannot block reverse voltage in AC applications. For bidirectional AC switching, discrete p-channel/n-channel pairs or purpose-built solid-state relays are required.
Is the gate threshold voltage consistent between both channels?
Yes - datasheet specifies VGS(th) as 1.0–2.0 V for both channels under identical test conditions (ID = 250 µA). Matching is within ±0.1 V typical, verified across production lots, supporting balanced timing in dual-switch topologies.
Does IRF7342D2PBF require a gate resistor for stability?
A gate resistor (typically 5–22 Ω) is recommended to dampen ringing caused by gate loop inductance and prevent unintended oscillation during fast edge transitions. Without it, parasitic LC resonance can cause shoot-through or gate overvoltage exceeding 20 V absolute maximum rating.
IRF7342D2PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- FETKY™
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 3.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 105mOhm @ 3.4A, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 38 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 690 pF @ 25 V
- FET Feature:
- Schottky Diode (Isolated)
- Power Dissipation (Max):
- 2W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
IRF7342D2PBF FAQ
1.How can I place an order for IRF7342D2PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRF7342D2PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRF7342D2PBF reliable?
The price and inventory of IRF7342D2PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7342D2PBF is usually 5 days.
3.What payment methods are accepted for IRF7342D2PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7342D2PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRF7342D2PBF?
IRF7342D2PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRF7342D2PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRF7342D2PBF?
For technical support, including IRF7342D2PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7342D2PBF requirements.
6.How does Aetrix verify that IRF7342D2PBF is sourced from the original manufacturer or authorized distributors?
All IRF7342D2PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7342D2PBF meets industry standards.
7.What is the process for return or replacement of IRF7342D2PBF?
All IRF7342D2PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7342D2PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRF7342D2PBF part is unused and in its original packaging.
Return procedure for IRF7342D2PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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