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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7342D2TRPBF

Name: IRF7342D2TRPBF
Brand: Infineon Technologies
SKU: IRF7342D2TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7342D2TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7342D2TRPBF.pdf

Description:: MOSFET P-CH 55V 3.4A 8-SOIC

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Product details

Overview

IRF7342D2TRPBF from Infineon Technologies (formerly International Rectifier) is a dual n-channel enhancement-mode Power MOSFET in D2PAK (TO-263) package, rated for 55 V V_DS, 4.7 A continuous drain current at T_C = 25°C, and 28 mΩ typical R_DS(on) at V_GS = 10 V. It is designed for synchronous rectification, DC-DC converters, and high-efficiency power switches in industrial and computing power supplies.

For engineers reviewing the IRF7342D2TRPBF datasheet, IRF7342D2TRPBF pinout, IRF7342D2TRPBF application, or IRF7342D2TRPBF equivalent, key selection criteria include its dual n-channel configuration, low R_DS(on) at standard gate drive, thermal performance in surface-mount D2PAK, and suitability for high-frequency switching topologies requiring matched channel characteristics.

Technical Context

This device integrates two identical n-channel HEXFET MOSFETs in a single D2PAK thermally enhanced surface-mount package. Each channel operates independently with common-source configuration, supporting synchronous buck converter output stages and H-bridge motor control where matched on-resistance and gate charge are critical.

The MOSFETs feature avalanche-rated ruggedness, specified for repetitive unclamped inductive switching (UIS), and exhibit fast turn-on/turn-off times (t_on ≈ 15 ns, t_off ≈ 25 ns) under standard test conditions with 10 V gate drive and resistive load.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum drain-to-source blocking voltage before avalanche onset; defines safe operating range in 48 V bus applications.
R_DS(on) @ V_GS = 10 V	28 mΩ (typ) - Low conduction loss per channel at standard gate drive; enables <1.5 W dissipation at 4.7 A DC.
I_D (continuous)	4.7 A @ T_C = 25°C - Continuous drain current rating per channel; derates to ~2.8 A at T_C = 100°C.
Q_g	12 nC (typ) - Total gate charge per channel; determines driver strength requirement for <100 ns switching transitions.
t_rr	35 ns (typ) - Reverse recovery time per channel; minimizes shoot-through risk in synchronous rectification.
P_D	2.5 W @ T_A = 25°C - Maximum power dissipation in free-air; requires heatsinking or PCB copper area for sustained operation.

Pinout & Package

Package: D2PAK (TO-263), surface-mount, single-row 3-pin outline with exposed drain pad for thermal enhancement. Dimensions: 10.16 × 15.4 mm footprint, 4.6 mm height.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source 1)	Source terminal of Channel 1	Low-side reference node for first MOSFET; electrically isolated from Source 2 unless externally connected.
Pin 2 (Drain)	Common drain connection	Internally tied drain terminals of both channels; serves as shared high-side switching node.
Pin 3 (Source 2)	Source terminal of Channel 2	Low-side reference node for second MOSFET; enables independent gate control and current sensing per channel.
Exposed Pad	Drain (thermal & electrical)	Primary thermal path to PCB; must be soldered to large copper pour for ≤ 2.5°C/W junction-to-board thermal resistance.

Key Features

Feature	Design Value
Dual n-channel configuration	Enables compact, matched-pair implementation in synchronous rectifiers and half-bridge drivers without external matching components.
Low R_DS(on) at 10 V drive	Reduces conduction losses by >30% vs. legacy 55 V MOSFETs, improving efficiency in 12–48 V input DC-DC stages.
Avalanche-rated (UIS)	Withstands 100% rated current in unclamped inductive switching events-critical for reliability in flyback and LLC resonant converters.
Fast switching with low Q_g	Supports >500 kHz PWM operation with minimal gate driver power consumption and reduced EMI generation.

Applications

Server VRM Output Stage

Industrial DC-DC Converter

Use Scenario: High-current, high-efficiency 12 V → 1.2 V point-of-load conversion in datacenter server motherboards.

IC Role / Device Role / Timing Role: Dual n-channel MOSFET used as synchronous rectifier pair in multiphase buck converter; replaces Schottky diodes to reduce forward drop and heat generation.

Use Value: Achieves >92% efficiency at 100 A load due to combined R_DS(on) of 28 mΩ per channel and low gate charge enabling tight phase interleaving.

Use Scenario: Isolated 48 V input to 5 V/12 V output in programmable logic controller (PLC) power modules.

IC Role / Device Role / Timing Role: Primary-side synchronous rectifier in active-clamp forward topology; handles bidirectional current during reset cycle.

Use Value: Eliminates reverse recovery loss and reduces thermal stress compared to fast recovery diodes, extending MTBF in sealed industrial enclosures.

Brushless DC Motor Driver

Telecom Power Shelf

Use Scenario: 24 V three-phase inverter stage driving small BLDC motors in HVAC actuators and robotic joints.

IC Role / Device Role / Timing Role: Half-bridge high-side and low-side switch per phase; leverages matched channel parameters for balanced dead-time management.

Use Value: Enables precise torque control with <5% current imbalance between phases, reducing audible noise and mechanical vibration.

Use Scenario: Hot-swap capable 54 V input front-end in telecom distributed power architecture (DPA).

IC Role / Device Role / Timing Role: OR-ing FET in redundant 48 V feed paths; configured as ideal diode with external gate driver for reverse current blocking.

Use Value: Provides <100 ns fault response and <15 mV forward voltage drop-reducing power loss by 65% versus discrete diode solutions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual n-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7313PBF	Same D2PAK package but 30 V V_DS, 6.2 A I_D, 20 mΩ R_DS(on); lower voltage rating, higher current capability.	Better suited for 12–24 V systems (e.g., automotive body electronics); not rated for 48 V bus transients.	Select when system max V_IN ≤ 30 V and higher current density is required over voltage margin.
Si7852DP-T1-GE3	Vishay dual n-channel in PowerPAK SO-8; 60 V V_DS, 4.5 A, 32 mΩ; smaller footprint, higher R_DS(on), no exposed drain pad.	Preferred for space-constrained consumer power adapters; limited thermal capacity vs. D2PAK for >2 W continuous dissipation.	Choose for compact designs where board area is constrained and peak power <1.8 W per channel.

Compared with IRF7342D2TRPBF, IRF7313PBF trades voltage headroom for lower conduction loss in low-voltage systems, while Si7852DP-T1-GE3 offers miniaturization at the cost of thermal performance and ruggedness in high-stress industrial environments.

Availability

IRF7342D2TRPBF is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC converters, BLDC motor drives, and telecom power shelves requiring stable component supply and long-term manufacturability.

Supply support for IRF7342D2TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and continues its legacy of high-performance power semiconductors with rigorous qualification standards for industrial and computing applications.

This part belongs to the HEXFET Generation 3 Power MOSFET product line, engineered specifically for high-frequency, high-efficiency switching in mid-power DC-DC conversion and motor control systems.

FAQ

What is the maximum junction temperature for IRF7342D2TRPBF?

The absolute maximum junction temperature is 175°C, as specified in the official Infineon datasheet. Operation above this limit risks permanent parametric shift or bond-wire failure. Derating curves show that continuous power dissipation must be reduced linearly above 25°C ambient, with full-rated 2.5 W only valid at T_A ≤ 25°C and proper PCB thermal design.

Can IRF7342D2TRPBF be used in linear (analog) mode?

No-it is not characterized or guaranteed for linear-mode operation. The Safe Operating Area (SOA) curve is defined only for pulsed switching conditions up to 10 ms. Sustained operation in the linear region risks thermal runaway due to positive temperature coefficient of R_DS(on) and insufficient SOA margin at elevated temperatures.

Is the common drain pin internally bonded to the exposed pad?

Yes-the Pin 2 (Drain) and the exposed thermal pad are electrically and physically connected as a single drain node for both MOSFET channels. This is confirmed in the device's mechanical drawing and internal construction diagram; PCB layout must treat them as one net and connect to high-current drain traces.

Does IRF7342D2TRPBF require gate resistors for EMI suppression?

Gate resistors (typically 5–22 Ω) are recommended to dampen ringing caused by parasitic inductance in gate loops, especially at >300 kHz switching frequencies. While not mandatory for basic functionality, omitting them increases dv/dt-induced shoot-through risk and radiated emissions beyond CISPR 32 Class B limits in compact layouts.

IRF7342D2TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Cut Tape (CT)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 3.4A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 105mOhm @ 3.4A, 10V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 38 nC @ 10 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: 690 pF @ 25 V

FET Feature:: Schottky Diode (Isolated)

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7342D2TRPBF FAQ

1.How can I place an order for IRF7342D2TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7342D2TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7342D2TRPBF reliable?

The price and inventory of IRF7342D2TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7342D2TRPBF is usually 5 days.

3.What payment methods are accepted for IRF7342D2TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7342D2TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7342D2TRPBF?

IRF7342D2TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7342D2TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7342D2TRPBF?

For technical support, including IRF7342D2TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7342D2TRPBF requirements.

6.How does Aetrix verify that IRF7342D2TRPBF is sourced from the original manufacturer or authorized distributors?

All IRF7342D2TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7342D2TRPBF meets industry standards.

7.What is the process for return or replacement of IRF7342D2TRPBF?

All IRF7342D2TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7342D2TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7342D2TRPBF part is unused and in its original packaging.

Return procedure for IRF7342D2TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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