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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF7353D1PBF

Name: IRF7353D1PBF
Brand: Infineon Technologies
SKU: IRF7353D1PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF7353D1PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: IRF7353D1PBF.pdf

Description:: MOSFET N-CH 30V 6.5A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF7353D1PBF from Infineon Technologies (formerly International Rectifier) is a co-packaged N-channel Power MOSFET and Schottky diode in a single SO-8 package, designed for synchronous buck converter high-side switching and freewheeling roles. It features V_DSS = 30 V, R_DS(on) = 0.023 Ω @ V_GS = 10 V, Schottky V_F = 0.39 V @ I_F = 1.0 A, 125°C max junction temperature, and 62.5°C/W junction-to-ambient thermal resistance - enabling compact, high-efficiency DC-DC conversion in portable power supplies.

For engineers reviewing the IRF7353D1PBF datasheet, IRF7353D1PBF pinout, IRF7353D1PBF application, or IRF7353D1PBF equivalent, key selection criteria include verified co-package thermal coupling between MOSFET and Schottky, low R_DS(on) at 4.5 V gate drive, body diode recovery performance (t_rr = 45 ns), and SO-8 footprint compatibility with standard PCB layout practices for point-of-load regulators.

Technical Context

This FETKY device integrates a Generation 5 HEXFET MOSFET and a low-V_F Schottky rectifier on a customized SO-8 leadframe to minimize board area and parasitic inductance in high-frequency switching topologies. The MOSFET delivers 6.5 A continuous drain current at 25°C with 22 nC total gate charge, while the Schottky provides 2.7 A average forward current and 0.50 V max forward voltage at 25°C.

Thermal design is enabled by the modified SO-8 package's 62.5°C/W R_θJA, validated under FR-4 mounting conditions. The integrated structure eliminates discrete routing between switch and freewheeling diode, reducing voltage overshoot during turn-off and improving efficiency in 300 kHz–1 MHz buck converters powering microcontrollers and PMICs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Maximum blocking voltage for 5 V–12 V input buck stages without derating.
R_DS(on) @ V_GS = 10 V	0.023 Ω - Enables <150 mW conduction loss at 5.8 A, critical for >90% efficiency at light-to-moderate loads.
Schottky V_F @ I_F = 1.0 A, 125°C	0.39 V - Reduces freewheeling loss vs. silicon diodes, lowering thermal stress in thermally constrained layouts.
Q_g	22 nC - Supports efficient 1 MHz switching with moderate gate driver strength (e.g., IR2110 or similar).
t_rr (body diode)	45 ns - Minimizes reverse recovery energy loss and EMI in hard-switched synchronous rectification.
R_θJA	62.5 °C/W - Allows 2.0 W dissipation at 25°C ambient; requires minimal copper pour for handheld device thermal budgets.
I_D @ T_A = 70°C	5.2 A - Specifies usable current capability in enclosed enclosures or stacked PCBs with elevated ambient.

Pinout & Package

IRF7353D1PBF uses a modified SO-8 (JEDEC MS-012AA) package with enhanced thermal leadframe, optimized for vapor phase, infrared, and wave soldering. Pin numbering follows standard SO-8 top-view orientation (pin 1 at top-left corner).

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal for MOSFET; requires 3.3 V–10 V logic-compatible drive with 22 nC total charge.
2 (S)	Source	Common reference node for MOSFET and Schottky cathode; must be low-inductance connection to ground/power plane.
3 (K)	Schottky Cathode	Output node of integrated Schottky; connects to output rail in buck topology; shares source node electrically.
4 (K)	Schottky Cathode (tied)	Second cathode terminal - internally bonded to pin 3 for improved current sharing and thermal spreading.
5 (D)	Drain	High-side switch node; connects to input voltage rail; carries full load current during on-time.
6 (D)	Drain (tied)	Second drain terminal - internally bonded to pin 5 to reduce package inductance and improve current handling.
7 (A)	Anode	Schottky anode; connects to output node (inductor output side) in buck configuration; forms freewheeling path.
8 (A)	Anode (tied)	Second anode terminal - internally bonded to pin 7 to support 2.7 A average forward current with low thermal resistance.

Key Features

Feature	Design Value
Co-packaged MOSFET + Schottky	Eliminates interconnect inductance and layout mismatch, enabling clean commutation in 1 MHz buck converters.
Generation 5 HEXFET technology	Delivers 0.023 Ω R_DS(on) at 10 V and 0.032 Ω at 4.5 V - supports direct 3.3 V or 5 V gate drive in low-voltage systems.
Low Schottky V_F (0.39 V @ 125°C)	Reduces conduction loss by ~40% vs. comparable silicon diodes, directly improving thermal margin in sealed enclosures.
Custom SO-8 thermal leadframe	Improves heat transfer from die to PCB by 25% vs. standard SO-8, verified via 62.5°C/W R_θJA measurement on FR-4.
Lead-free (PbF) construction	Complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1).

Applications

Buck Converter Output Stage

USB-C PD Power Delivery Module

Use Scenario: 5 V–12 V input to 1.2 V/6 A output for FPGA core supply in industrial edge controller.

IC Role / Device Role / Timing Role: High-side synchronous switch (MOSFET) and low-loss freewheeling path (Schottky) operating at 800 kHz.

Use Value: Co-package integration reduces layout area by 40% vs. discrete pair and cuts switching loss by 18% due to eliminated trace inductance.

Use Scenario: Dual-phase 20 V input to 9 V/3 A USB-C PD output in portable battery pack.

IC Role / Device Role / Timing Role: Primary switching element in each phase, leveraging 4.5 V gate drive compatibility with PD controller PWM outputs.

Use Value: 0.032 Ω R_DS(on) @ 4.5 V ensures stable regulation under dynamic load steps without external gate boosting.

Point-of-Load Regulator for Microcontroller

Wireless Charging Transmitter Power Stage

Use Scenario: 3.3 V/2 A supply for ARM Cortex-M7 MCU with real-time Ethernet interface in medical sensor node.

IC Role / Device Role / Timing Role: Final-stage regulator delivering low-noise, tightly regulated voltage with fast transient response.

Use Value: 45 ns body diode t_rr minimizes voltage spikes during load transients, preserving signal integrity on adjacent analog traces.

Use Scenario: 12 V input to 5 V/2 A auxiliary rail powering Qi-compliant transmitter IC and coil driver in smartphone charging pad.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side DC-DC stage, replacing traditional diode for higher efficiency.

Use Value: 0.39 V Schottky V_F at 125°C maintains >89% efficiency even at full load and 60°C ambient - extending thermal shutdown margin.

Equivalent & Alternatives

The following parts are listed as comparable options for similar co-packaged MOSFET/Schottky applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7842DP-T1-GE3	R_DS(on) = 0.025 Ω @ 10 V; Schottky V_F = 0.45 V @ 1 A; R_θJA = 65°C/W; same SO-8 footprint.	Higher Schottky V_F increases conduction loss in high-duty-cycle applications; slightly lower thermal performance.	Preferred when cost sensitivity outweighs 50 mV V_F penalty and layout space allows minor copper adjustment.
IPB80N04S4-02	Single N-channel MOSFET only (no integrated Schottky); R_DS(on) = 0.002 Ω @ 10 V; TO-263 package; requires external diode.	Enables higher current (80 A) but adds layout complexity, BOM count, and parasitic inductance - unsuitable for space-constrained buck designs.	Select only when >10 A output current is required and board area permits discrete diode placement with tight loop control.

Compared with Si7842DP-T1-GE3 and IPB80N04S4-02, IRF7353D1PBF uniquely balances ultra-low R_DS(on), sub-0.4 V Schottky V_F, and proven SO-8 thermal reliability - making it optimal for 3–6 A buck regulators where board area and thermal headroom are jointly constrained.

Availability

IRF7353D1PBF is available at Aetrix Electronics and suitable for buck converter output stages, USB-C PD modules, point-of-load regulators, and wireless charging auxiliary power supplies requiring stable component supply across production ramp and long-term maintenance cycles.

Supply support for IRF7353D1PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO 9001 and IATF 16949.

IRF7353D1PBF belongs to Infineon's FETKY product line - engineered specifically for space-constrained, high-efficiency DC-DC conversion in consumer and industrial portable electronics, emphasizing co-package thermal synergy and gate-drive compatibility with low-voltage controllers.

FAQ

What is the maximum continuous drain current for IRF7353D1PBF at 70°C ambient?

The maximum continuous drain current is 5.2 A at T_A = 70°C, as specified in the Absolute Maximum Ratings table. This value accounts for thermal derating from the 6.5 A rating at 25°C, based on the device's 62.5°C/W junction-to-ambient thermal resistance and 150°C maximum junction temperature limit.

Can IRF7353D1PBF be driven directly by a 3.3 V microcontroller GPIO?

No - the gate threshold voltage (V_GS(th)) ranges from 1.0 V to 2.5 V, but R_DS(on) is not guaranteed below V_GS = 4.5 V. At 3.3 V, R_DS(on) exceeds 0.06 Ω, causing excessive conduction loss. A dedicated gate driver or level-shifter is required for reliable operation at full rated current.

Is the Schottky diode in IRF7353D1PBF rated for reverse voltage blocking?

Yes - the Schottky diode shares the MOSFET's 30 V V_DSS rating and is rated for up to 30 V reverse voltage (V_RRM). Its reverse leakage remains ≤0.06 μA at 30 V and 25°C, confirming suitability for buck freewheeling where the anode sees near-zero voltage during MOSFET on-time.

What is the recommended PCB layout practice for thermal management?

Use ≥2 oz copper on the source (pins 2, 3, 4) and drain (pins 5, 6) pads, with ≥4 thermal vias per pad connecting to inner ground/power planes. Maintain ≥0.5 mm clearance from other components and avoid solder mask over thermal pads. The device's R_θJA was measured on standard FR-4 with this layout - deviations increase junction temperature linearly.

IRF7353D1PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: FETKY™

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 6.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 32mOhm @ 5.8A, 10V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 33 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 650 pF @ 25 V

FET Feature:: Schottky Diode (Isolated)

Power Dissipation (Max):: 2W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

IRF7353D1PBF FAQ

1.How can I place an order for IRF7353D1PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF7353D1PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF7353D1PBF reliable?

The price and inventory of IRF7353D1PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF7353D1PBF is usually 5 days.

3.What payment methods are accepted for IRF7353D1PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF7353D1PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF7353D1PBF?

IRF7353D1PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF7353D1PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF7353D1PBF?

For technical support, including IRF7353D1PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF7353D1PBF requirements.

6.How does Aetrix verify that IRF7353D1PBF is sourced from the original manufacturer or authorized distributors?

All IRF7353D1PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF7353D1PBF meets industry standards.

7.What is the process for return or replacement of IRF7353D1PBF?

All IRF7353D1PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF7353D1PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF7353D1PBF part is unused and in its original packaging.

Return procedure for IRF7353D1PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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